diode zener 27c
Abstract: MTZ15B MTZ 30 10D-9 27C zener lz 04
Text: MTZ Series SILICON EPITAXIAL PLANAR ZENER DIODES Constant Voltage Control Applications Features • Glass sealed envelope. MSD • High reliability. Absolute Maximum Ratings (Ta = 25oC) Symbol Value Unit Ptot 500 mW Junction Temperature Tj 175 O Storage Temperature Range
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ZJ33B
Abstract: 27C zener diode zener 30c Z 51a zener
Text: ZJ Series SILICON EPITAXIAL PLANER ZENER DIODES Constant Voltage Control Applications Features • Glass sealed envelope. MSD • High reliability. Absolute Maximum Ratings (Ta = 25oC) Symbol Value Unit Ptot 500 mW Junction Temperature Tj 175 O Storage Temperature Range
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ZENER CODE 51b
Abstract: 47C 36a 10D-9 27C zener diode Lz 99 diode zener 30c Z 51a zener
Text: ZJ Series SILICON EPITAXIAL PLANER ZENER DIODES Constant Voltage Control Applications Features • Glass sealed envelope. MSD • High reliability. Absolute Maximum Ratings (Ta = 25oC) Symbol Value Unit Ptot 500 mW Junction Temperature Tj 175 O Storage Temperature Range
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16tance
ZENER CODE 51b
47C 36a
10D-9
27C zener
diode Lz 99
diode zener 30c Z
51a zener
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MTZ 208
Abstract: MTZ 30 diode zener 27c 10D-9 27C zener diode zener 33c IR 10D 8A lz 65 mtz24c MTZ 5.6A
Text: MTZ Series SILICON EPITAXIAL PLANAR ZENER DIODES Constant Voltage Control Applications Features • Glass sealed envelope. MSD • High reliability. Absolute Maximum Ratings (Ta = 25oC) Symbol Value Unit Ptot 500 mW Junction Temperature Tj 175 O Storage Temperature Range
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10D-9
Abstract: 27C zener 39D zener diode diode zener 33c J15-C MTZJ18C zener 56c
Text: MTZ J Series ZENER DIODES Constant Voltage Control Applications Features • Glass sealed envelope. MSD • High reliability. Absolute Maximum Ratings (Ta = 25oC) Symbol Value Unit Ptot 500 mW Junction Temperature Tj 175 O Storage Temperature Range TS -65 to +175
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Untitled
Abstract: No abstract text available
Text: GDZJ2.0~GDZJ56 AXIAL LEAD ZENER DIODES 2.0 to 56 Volts VOLTAGE POWER 500 mWatts FEATURES 0.018 0.45 0.014(0.35) 1.02(26.0)MIN. • Planar Die construction • 500mW Power Dissipation • Ideally Suited for Automated Assembly Processes 0.116(2.9) 0.092(2.3)
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GDZJ56
500mW
2002/95/EC
DO-34
MIL-STD-750,
DO-34
2012-REV
RB500V-40
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zener 4c3
Abstract: zener gdz zener gdz marking
Text: GDZ2.0~GDZ56 AXIAL LEAD ZENER DIODES VOLTAGE 2.0 to 56 Volts POWER 500 mWatts FEATURES 0.018 0.45 0.014(0.35) 1.02(26.0)MIN. • Planar Die construction • 500mW Power Dissipation • Ideally Suited for Automated Assembly Processes 0.116(2.9) 0.092(2.3)
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GDZ56
500mW
2002/95/EC
DO-34
MIL-STD-750,
DO-34
2012-REV
RB500V-40
zener 4c3
zener gdz
zener gdz marking
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Z6b8
Abstract: zener Z11B zener z27b Z12C gd 241 c Z6A2 Z27D
Text: DATA SHEET GDZJ2.0~GDZJ56 AXIAL LEAD ZENER DIODES 2.0 to 56 Volts VOLTAGE POWER 500 mWatts FEATURES 0.018 0.45 0.014(0.35) 1.02(26.0)MIN. • Planar Die construction • 500mW Power Dissipation • Ideally Suited for Automated Assembly Processes MECHANICAL DATA
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GDZJ56
500mW
2002/95/EC
DO-34
MIL-STD-750,
DO-34
Z6b8
zener Z11B
zener z27b
Z12C
gd 241 c
Z6A2
Z27D
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zener 6c2
Abstract: zener 4c3 zener 5c1 marking code 6C8 zener 9A1 zener 9c1 zener 5B6 DIODES 33D 6c2 zener 4C3 zener
Text: GDZ2.0~GDZ56 AXIAL LEAD ZENER DIODES VOLTAGE 2.0 to 56 Volts POWER 500 mWatts FEATURES 0.018 0.45 0.014(0.35) 1.02(26.0)MIN. • Planar Die construction • 500mW Power Dissipation • Ideally Suited for Automated Assembly Processes 0.116(2.9) 0.092(2.3)
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GDZ56
500mW
2002/95/EC
DO-34
MIL-STD-750,
2012-REV
RB500V-40
zener 6c2
zener 4c3
zener 5c1
marking code 6C8
zener 9A1
zener 9c1
zener 5B6
DIODES 33D
6c2 zener
4C3 zener
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z6c8
Abstract: Z11A Z22D z9b1 zener z27b Z20B Z13C type marking code 30C 500mw Z12C z10b
Text: GDZJ2.0~GDZJ56 AXIAL LEAD ZENER DIODES 2.0 to 56 Volts VOLTAGE POWER 500 mWatts FEATURES 0.018 0.45 0.014(0.35) 1.02(26.0)MIN. • Planar Die construction • 500mW Power Dissipation • Ideally Suited for Automated Assembly Processes 0.116(2.9) 0.092(2.3)
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GDZJ56
500mW
2002/95/EC
DO-34
MIL-STD-750,
DO-34
2012-REV
RB500V-40
z6c8
Z11A
Z22D
z9b1
zener z27b
Z20B
Z13C
type marking code 30C 500mw
Z12C
z10b
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51a zener
Abstract: 27C zener MTZJ15C j39c J20B MTZJ27C
Text: MTZ J Series ZENER DIODES Constant Voltage Control Applications Features • Glass sealed envelope. MSD • High reliability. Absolute Maximum Ratings (Ta = 25oC) Symbol Value Unit Ptot 500 mW Junction Temperature Tj 175 O Storage Temperature Range TS -65 to +175
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zener gdz
Abstract: No abstract text available
Text: GDZ2.0~GDZ56 AXIAL LEAD ZENER DIODES VOLTAGE 2.0 to 56 Volts POWER 500 mWatts FEATURES 0.018 0.45 0.014(0.35) 1.02(26.0)MIN. • Planar Die construction • 500mW Power Dissipation • Ideally Suited for Automated Assembly Processes 0.116(2.9) 0.092(2.3)
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GDZ56
500mW
2011/65/EU
DO-34
MIL-STD-750,
DO-34
2013-REV
zener gdz
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Z22A
Abstract: Z18B Z30C GDZJ12B Z12B Z18A Z15B DAT 1018 P Z10C zener z27b
Text: DAT SHEET GDZJ2.0~GDZJ56 AXIAL LEAD ZENER DIODES 2.0 to 56 Volts VOLTAGE 500 mWatts POWER FEATURES • Planar Die construction • 500mW Power Dissipation • Ideally Suited for Automated Assembly Processes • In compliance with EU RoHS 2002/95/EC directives
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GDZJ56
500mW
2002/95/EC
DO-34
MIL-STD-750,
DO-34
Z22A
Z18B
Z30C
GDZJ12B
Z12B
Z18A
Z15B
DAT 1018 P
Z10C
zener z27b
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33a zener
Abstract: No abstract text available
Text: GLZ2.0 SERIES SURFACE MOUNT ZENER DIODES VOLTAGE 2.0 to 56 Volts 500 mWatts POWER FEATURES • Planar Die construction • 500mW Power Dissipation 0.063 1.6 • In compliance with EU RoHS 2002/95/EC directives MECHANICAL DATA • Case: Molded Glass MINI-MELF
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500mW
2002/95/EC
MIL-STD-750,
33a zener
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zener gdzj marking
Abstract: zener gdzj
Text: GDZJ2.0~GDZJ56 AXIAL LEAD ZENER DIODES 2 to 56 Volt VOLTAGE POWER 500 mWatt FEATURES • Planar Die construction • 500mW Power Dissipation • Ideally Suited for Automated Assembly Processes • Lead free in compliance with EU RoHS 2011/65/EU directives
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GDZJ56
500mW
2011/65/EU
DO-34
MIL-STD-750,
DO-34
2014-REV
zener gdzj marking
zener gdzj
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marking code 6C8
Abstract: zener 5A1 zener 10D zener 5c1 zener 9c1 DIODES 33D Marking 4c7 4C7 marking code zener 4c3
Text: GLZ2.0 SERIES SURFACE MOUNT ZENER DIODES VOLTAGE 2.0 to 56 Volts 500 mWatts POWER FEATURES • Planar Die construction • 500mW Power Dissipation 0.063 1.6 • In compliance with EU RoHS 2002/95/EC directives MECHANICAL DATA • Case: Molded Glass MINI-MELF
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500mW
2002/95/EC
MIL-STD-750,
2011-REV
marking code 6C8
zener 5A1
zener 10D
zener 5c1
zener 9c1
DIODES 33D
Marking 4c7
4C7 marking code
zener 4c3
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10D-9
Abstract: 6c-5 transistor IR 10D 8A 27C zener diode zener 27c lz 04 lz 65 MTZ20B
Text: MTZ Series SILICON EPITAXIAL PLANAR ZENER DIODES Constant Voltage Control Applications Features min. 27.5 • Glass sealed envelope. MSD • High reliability. max. 2.9 White Cathode Band Part No. Black Color 1.9 min. 27.5 max. max. 0.45 Glass case JEDEC DO-34
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DO-34
10D-9
6c-5 transistor
IR 10D 8A
27C zener
diode zener 27c
lz 04
lz 65
MTZ20B
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z10b
Abstract: Z6A2 Z13B z6c8 Z18B zener z27b Z30C 51a zener Z16B z15a
Text: GLZJ2.0 SERIES SURFACE MOUNT ZENER DIODES VOLTAGE 2.0 to 56 Volts 500 mWatts POWER FEATURES • Planar Die construction • 500mW Power Dissipation 0.063 1.6 • Lead free in comply with EU RoHS 2002/95/EC directives MECHANICAL DATA 0.020(0.5) 0.012(0.3)
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500mW
2002/95/EC
MIL-STD-750,
2012-REV
RB500V-40
z10b
Z6A2
Z13B
z6c8
Z18B
zener z27b
Z30C
51a zener
Z16B
z15a
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Untitled
Abstract: No abstract text available
Text: GQZJ2.0~GQZJ56 SURFACE MOUNT ZENER DIODES 2.0 to 56 Volts VOLTAGE 500 mWatts POWER FEATURES • Planar Die construction 7 • 500mW Power Dissipation 0.063 1.6) • Lead free in comply with EU RoHS 2002/95/EC directives MECHANICAL DATA 0.020(0.5) 0.012(0.3)
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GQZJ56
500mW
2002/95/EC
MIL-STD-750,
2012-REV
RB500V-40
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Untitled
Abstract: No abstract text available
Text: GLZ2.0 SERIES SURFACE MOUNT ZENER DIODES VOLTAGE 2.0 to 56 Volts 500 mWatts POWER FEATURES • Planar Die construction • 500mW Power Dissipation 0.063 1.6 • Lead free in comply with EU RoHS 2011/65/EU directives MECHANICAL DATA • Case: Molded Glass MINI-MELF
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500mW
2011/65/EU
MIL-STD-750,
2011-REV
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zener gdz marking
Abstract: No abstract text available
Text: GDZ2.0~GDZ56 AXIAL LEAD ZENER DIODES 2 to 56 Volt VOLTAGE POWER 500 mWatt FEATURES • Planar Die construction • 500mW Power Dissipation • Ideally Suited for Automated Assembly Processes • Lead free in compliance with EU RoHS 2011/65/EU directives MECHANICAL DATA
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GDZ56
500mW
2011/65/EU
DO-34
MIL-STD-750,
DO-34
2014-REV
zener gdz marking
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6b2 zener
Abstract: Marking 4c7 Tube 5A6 DIODES 33D
Text: GLZ2.0 SERIES SURFACE MOUNT ZENER DIODES VOLTAGE 2.0 to 56 Volts 500 mWatts POWER FEATURES • Planar Die construction • 500mW Power Dissipation 0.063 1.6 • Lead free in comply with EU RoHS 2002/95/EC directives MECHANICAL DATA • Case: Molded Glass MINI-MELF
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500mW
2002/95/EC
MIL-STD-750,
2011-REV
6b2 zener
Marking 4c7
Tube 5A6
DIODES 33D
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zener 4c3
Abstract: zener 5c1 ZENER CODE 51b zener 2a7 4C7 marking code zener 10D zener 4B7 20D22A DIODES 33D marking code 6C8
Text: GLZ2.0 SERIES SURFACE MOUNT ZENER DIODES VOLTAGE 2.0 to 56 Volts 500 mWatts POWER FEATURES • Planar Die construction • 500mW Power Dissipation 0.063 1.6 • Lead free in comply with EU RoHS 2002/95/EC directives MECHANICAL DATA • Case: Molded Glass MINI-MELF
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500mW
2002/95/EC
MIL-STD-750,
2011-REV
RB500V-40
zener 4c3
zener 5c1
ZENER CODE 51b
zener 2a7
4C7 marking code
zener 10D
zener 4B7
20D22A
DIODES 33D
marking code 6C8
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zener diodes 10z6.2
Abstract: 1S265 Toshiba 02BZ2.2 1S2452-1S2454 10Z15-M 02BZ2.2 05Z30 10Z12-M 05Z16L 02z18a
Text: TOSHIBA {DISCRETE/OPTO} 3e] ZENER DIODES \ _ 9097250 TOSHIBA <DI S C R E T E / O P T O > . “ 39 C 0 2 2 2 1 I ZENER DIODES Vz Typical Value 2 5 0 mW Type " 0.5 W Type 1 W Type 1W Type {Plastic Mold Type {Metal Typ« DE • TDTTESO □□□2221 1 I ’
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250mW
02BZ2
02BZ3
02BZ4
J805Z2
805Z3
S805Z4
zener diodes 10z6.2
1S265
Toshiba 02BZ2.2
1S2452-1S2454
10Z15-M
02BZ2.2
05Z30
10Z12-M
05Z16L
02z18a
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