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    ZENER DIODE 54A Search Results

    ZENER DIODE 54A Result Highlights (6)

    Part ECAD Model Manufacturer Description Download Buy
    CUZ24V Toshiba Electronic Devices & Storage Corporation Zener Diode, 24 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    XCUZ13V Toshiba Electronic Devices & Storage Corporation Zener Diode, 13.0 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    XCUZ36V Toshiba Electronic Devices & Storage Corporation Zener Diode, 36.0 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    CUZ12V Toshiba Electronic Devices & Storage Corporation Zener Diode, 12 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    MUZ5V6 Toshiba Electronic Devices & Storage Corporation Zener Diode, 5.6 V, USM Visit Toshiba Electronic Devices & Storage Corporation
    CUZ16V Toshiba Electronic Devices & Storage Corporation Zener Diode, 16 V, USC Visit Toshiba Electronic Devices & Storage Corporation

    ZENER DIODE 54A Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    zener zp 278

    Abstract: Zener Diode minimelf Zener diode wz 162 krc 118 056 diode 918b zener diode 182 KD6 Z7 ZENER DIODE 18-2 diode 368b h25b
    Text: MCC TM Micro Commercial Components ZENER DIODES 500mW ZENER DIODE / DODO-35 MCC PART NUMBER NOMINAL ZENER VOLTAGE VZ @ IZT VOLTS TEST CURRENT IZT mA MAXIMUM ZENER IMPEDANCE ‘B’ SUFFIX ONLY ZZT @ IZT Ω 1N5221B 2.4 20 30 1N5222B 2.5 20 30 1N5223B 2.7 20


    Original     		PDF 500mW DODO-35 1N5221B 1N5222B 1N5223B 1N5224B 1N5225B 1N5226B 1N5227B 1N5228B zener zp 278 Zener Diode minimelf Zener diode wz 162 krc 118 056 diode 918b zener diode 182 KD6 Z7 ZENER DIODE 18-2 diode 368b h25b

    33A zener diode

    Abstract: zener diode 46a
    Text: SMA4728A~SMA4764A Zener diode Features 1. For surface mounted applications 2. Low zener impedance 3. Low regulation factor 4. VZ-tolerance±5% Applications Voltage stabilization Absolute Maximum Ratings Tj=25℃ Parameter Test Conditions Type Symbol Value


    Original     		PDF SMA4728A SMA4764A 1-Jul-2004 DO-214AC 33A zener diode zener diode 46a

    Untitled

    Abstract: No abstract text available
    Text: 1SMA4728A – SZ1330A 1.0W SURFACE MOUNT ZENER DIODE WON-TOP ELECTRONICS Pb Features  Glass Passivated Die Construction       1.0W Power Dissipation 3.3V – 330V Nominal Zener Voltage 5% Standard Vz Tolerance Low Inductance For Use in Voltage Regulator or Reference


    Original     		PDF 1SMA4728A SZ1330A SMA/DO-214AC, MIL-STD-750,

    Untitled

    Abstract: No abstract text available
    Text: SML4728A – SMZ1330A 1.0W SURFACE MOUNT ZENER DIODE WON-TOP ELECTRONICS Pb Features        Low Profile 1.33mm Max. Case Height 1.0W Power Dissipation 3.3V – 330V Nominal Zener Voltage 5% Standard Vz Tolerance Low Inductance For Use in Voltage Regulator or Reference


    Original     		PDF SML4728A SMZ1330A OD-123FL OD-123FL, MIL-STD-202,

    zener diode 46a

    Abstract: ZENER DIODE IN 47 1W 47A zener diode 54A SMA4754A
    Text: SMA4728A THRU SMA4764A PB FREE PRODUCT 1W GLASS PASSIVATED JUNCTION SILICON ZENER DIODE FEATURES ● ● ● ● ● ● ● Glass passivated chip Low leakage Built-in strain relief Low inductance High peak reverse power dissipation Lead Pb -free component


    Original     		PDF SMA4728A SMA4764A MIL-STD-202, SMA4758A SMA4759A SMA4760A SMA4761A SMA4762A SMA4763A zener diode 46a ZENER DIODE IN 47 1W 47A zener diode 54A SMA4754A

    39A zener diode

    Abstract: SMAJ ZENER DIODE SMAJ4730A
    Text: MCC SMAJ4728A THRU SMAJ4764A   omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# Features • • • • Maximum Ratings • • • • • 1 Watt Zener Diode 3.3 to 100  Volts Low Zener Impedance


    Original     		PDF SMAJ4728A SMAJ4764A DO-214AC Tamb50) 100K/W 200mA: 39A zener diode SMAJ ZENER DIODE SMAJ4730A

    39A zener diode

    Abstract: 51a zener 46a sma zener diode 46a SMAJ4734A SMAJ4730A
    Text: MCC TM Micro Commercial Components SMAJ4728A THRU SMAJ4764A   omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# Features • • • • Maximum Ratings • • • • • 1 Watt Zener Diode 3.3 to 100  Volts


    Original     		PDF SMAJ4728A SMAJ4764A DO-214AC Tamb50) 100K/W 200mA: 39A zener diode 51a zener 46a sma zener diode 46a SMAJ4734A SMAJ4730A

    zener diode 54A

    Abstract: Zener Diodes 300v STW54NK30Z W54NK30Z
    Text: STW54NK30Z N-CHANNEL 300V - 0.052Ω - 54A TO-247 Zener-Protected SuperMESH MOSFET Figure 1: Package Table 1: General Features TYPE BVDSS RDS on ID Pw STW54NK30Z 300 V < 0.060 Ω 54 A 300 W • ■ ■ ■ ■ ■ TYPICAL RDS(on) = 0.052 Ω EXTREMELY HIGH dv/dt CAPABILITY


    Original     		PDF STW54NK30Z O-247 zener diode 54A Zener Diodes 300v STW54NK30Z W54NK30Z

    STW54NK30Z

    Abstract: No abstract text available
    Text: STW54NK30Z N-CHANNEL 300V - 0.052Ω - 54A TO-247 Zener-Protected SuperMESH MOSFET Figure 1: Package Table 1: General Features TYPE BVDSS RDS on ID Pw STW54NK30Z 300 V < 0.060 Ω 54 A 300 W • ■ ■ ■ ■ ■ TYPICAL RDS(on) = 0.052 Ω EXTREMELY HIGH dv/dt CAPABILITY


    Original     		PDF STW54NK30Z O-247 STW54NK30Z

    27N60C3R

    Abstract: RURP3060 HGTG27N60C3R LD26 igbt 600V
    Text: HGTG27N60C3R 54A, 600V, Rugged UFS Series N-Channel IGBT January 1997 Features Description • 54A, 600V, TC = 25oC This IGBT was designed for optimum performance in the demanding world of motor control operation as well as other high voltage switching applications. This device demonstrates RUGGED performance capability when subjected to harsh SHORT


    Original     		PDF HGTG27N60C3R 150oC 180ns 27N60C3R RURP3060 HGTG27N60C3R LD26 igbt 600V

    490-48

    Abstract: HGTG27N60C3DR 27N60C3DR LD26 RURP3060 27n-60
    Text: HGTG27N60C3DR S E M I C O N D U C T O R 54A, 600V, Rugged UFS Series N-Channel IGBT with Anti-Parallel Ultrafast Diode January 1997 Features Description • 54A, 600V, TC = 25oC This IGBT was designed for optimum performance in the demanding world of motor control operation as well as other


    Original     		PDF HGTG27N60C3DR 150oC 200ns 1-800-4-HARRIS 490-48 HGTG27N60C3DR 27N60C3DR LD26 RURP3060 27n-60

    27N60C3DR

    Abstract: HGTG27N60C3DR 490-48 LD26 RURP3060
    Text: HGTG27N60C3DR 54A, 600V, Rugged UFS Series N-Channel IGBT with Anti-Parallel Ultrafast Diode January 1997 Features Description • 54A, 600V, TC = 25oC This IGBT was designed for optimum performance in the demanding world of motor control operation as well as other


    Original     		PDF HGTG27N60C3DR 150oC 200ns 27N60C3DR HGTG27N60C3DR 490-48 LD26 RURP3060

    G30N6

    Abstract: 27N60C3DR
    Text: [ /Title HGT G27N6 0C3D R /Subject (54A, 600V, Rugged UFS Series NChannel IGBT with AntiParallel Ultrafa st Diode) /Autho r () /Keywords (Intersil Corporation, semiconductor, Avalanche HGTG27N60C3DR CT ODU ODUCT R P PR TE OLE UTE OBS UBSTIT 0B3D E S G30N6


    Original     		PDF G30N6 HGTG27N60C3DR G27N6 27N60C3DR

    27N60C3R

    Abstract: TA49048 27N60C hgtg27n60
    Text: [ /Title HGT G27N6 0C3R /Subject (54A, 600V, Rugged UFS Series NChannel IGBT) /Autho r () /Keywords (Intersil Corporation, semiconductor, Avalanche Energy Rated, Switch ing Power Supplies, Power HGTG27N60C3R T UCT ROD RODUC P E P T E E OL UT OBS UBSTIT 0B3


    Original     		PDF HGTG27N60C3R G27N6 27N60C3R TA49048 27N60C hgtg27n60

    HGTG18N120BND

    Abstract: 18n120bnd 12V 200A Relay LD26 TA49304
    Text: HGTG18N120BND Data Sheet January 2000 54A, 1200V, NPT Series N-Channel IGBT with Anti-Parallel Hyperfast Diode The HGTG18N120BND is a Non-Punch Through NPT IGBT design. This is a new member of the MOS gated high voltage switching IGBT family. IGBTs combine the best


    Original     		PDF HGTG18N120BND HGTG18N120BND 18n120bnd 12V 200A Relay LD26 TA49304

    G18N120BN

    Abstract: HGTG18N120BN HGTG18N120BND LD26 transistors equivalent
    Text: HGTG18N120BN Data Sheet January 2000 54A, 1200V, NPT Series N-Channel IGBT Features The HGTG18N120BN is a Non-Punch Through NPT IGBT design. This is a new member of the MOS gated high voltage switching IGBT family. IGBTs combine the best features of MOSFETs and bipolar transistors. This device


    Original     		PDF HGTG18N120BN HGTG18N120BN 140ns 150oC G18N120BN HGTG18N120BND LD26 transistors equivalent

    HGTG18N120BN

    Abstract: HGTG18N120BND LD26
    Text: HGTG18N120BN Data Sheet December 2001 54A, 1200V, NPT Series N-Channel IGBT Features The HGTG18N120BN is a Non-Punch Through NPT IGBT design. This is a new member of the MOS gated high voltage switching IGBT family. IGBTs combine the best features of MOSFETs and bipolar transistors. This device


    Original     		PDF HGTG18N120BN HGTG18N120BN 140ns 150oC HGTG18N120BND LD26

    Diode Marking ZM Motorola

    Abstract: DIODE MOTOROLA 39A ZENER 18-2 5t
    Text: M O T O R O L A SC DIODE S/O PTO 2SE D b3fcj?255 Ü0Ô1325 3 MOTOROLA • Order this data sheet by 1SMB5913A/D 1b I-5T SEMICONDUCTOR TECHNICAL DATA 1SMB5913A, B thru 1.5 W att Plastic Surface M ount Silicon Zener Diodes 1SMB5956A, B . . . a completely new line of 1.5 Watt Zener Diodes offering the following advantages:


    OCR Scan     		PDF 1SMB5913A/D 1SMB5913A, 1SMB5956A, 1SMB5913A 241Sb C6459& Diode Marking ZM Motorola DIODE MOTOROLA 39A ZENER 18-2 5t

    1NB21-1

    Abstract: 1N327 1NB25A 1NB21 1NB29A 1N829-1 1NS27 1NB29
    Text: Feb. 25. 1999 9:54AM No. 7992 P. lO/ll • 1N821,1N823,1N825,1NS27, AND 1NB29 AVAILABLE IN JAN, JANTX AND JANTXV 1N821 thru 1N829A • 1NB21-1,1N823*1I1N825*1,1N327*1 ANO 1N829-1 AVAILABLE IN JAN, JANTX, JANTXV and ANO JANS “* — ~ 1N821-1 thru 1N829-1


    OCR Scan     		PDF 1N821 1N823 1N825 1NS27, 1NB29 1NB21-1 1I1N825 1N327 1N829-1 1NB25A 1NB21 1NB29A 1NS27

    Untitled

    Abstract: No abstract text available
    Text: S HGTG27N60C3R 54A, 600V, Rugged UFS Series N-Channel IGBT January 1997 Features Description • 54A, 600V, T c = 25°C This IGBT was designed for optimum performance in the demanding world of motor control operation as well as other high voltage switching applications. This device demonstrates RUG­


    OCR Scan     		PDF HGTG27N60C3R 180ns

    Untitled

    Abstract: No abstract text available
    Text: S HGTG27N60C3DR 54A, 600V, Rugged UFS Series N-Channel IGBT with Anti-Parallel Ultrafast Diode January 1997 Features Description • 54A, 600V, Tc = 25°C This IGBT was designed for optimum performance in the demanding world of motor control operation as well as other


    OCR Scan     		PDF HGTG27N60C3DR 200ns

    axial zener diodes marking code c3v6

    Abstract: H 48 zener diode ZENER DIODES CODE ID CHART diode zener ph c5v6 74151N HS7030 sescosem SESCOSEM semiconductor diode zener BZX 61 C 10 BZX 460 zener diode
    Text: SESCOSEM Introduction Sescosem, Societe Europeenne de Semiconducteurs et de Microelectronique, is a branch of the Thomson-CSF Group, one of the world’s largest High Technology combines which includes Ducati Microfaro, LCC-CICE, COFELEC and many other companies.


    OCR Scan     		PDF BR805A BR81A BR82A BR84A BR86A BR88A BR91A BR92A BR94A BR96A axial zener diodes marking code c3v6 H 48 zener diode ZENER DIODES CODE ID CHART diode zener ph c5v6 74151N HS7030 sescosem SESCOSEM semiconductor diode zener BZX 61 C 10 BZX 460 zener diode

    18n120bnd

    Abstract: C5426 TG18N120BND TA49304 HGTG18N120BND
    Text: HGTG18N120BND S e m iconductor October 1998 Data Sheet 54A, 1200V, NPT Series N-Channel IGBT with Anti-Parallel Hyperfast Diode The HGTG18N120BND is a Non-Punch Through IGBT design. This is a new member of the MOS gated high voltage switching IGBT family. IGBTs combine the best


    OCR Scan     		PDF HGTG18N120BND HGTG18N120BND TA49304. 18n120bnd C5426 TG18N120BND TA49304

    18n120bnd

    Abstract: 333AJ 25C312 HGTG18N120BND 12v zener diode JEDEC 1N TA49304 12V 200A Relay LD26
    Text: in t e HGTG18N120BND r r ii J a n u a ry . m Data Sheet 54A, 1200V, NPT Series N-Channel IGBT with Anti-Parallel Hyperfast Diode The HGTG18N120BND is a Non-Punch Through NPT IGBT design. This is a new member of the MOS gated high voltage switching IGBT family. IGBTs combine the best


    OCR Scan     		PDF HGTG18N120BND HGTG18N120BND TA49304. 18n120bnd 333AJ 25C312 12v zener diode JEDEC 1N TA49304 12V 200A Relay LD26