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    onsemi HGTG18N120BND

    IGBT 1200V 54A 390W TO247
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    Harris Semiconductor HGTG18N120BND

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    Chip 1 Exchange HGTG18N120BND 512
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    18n120bnd

    Abstract: C5426 TG18N120BND TA49304 HGTG18N120BND
    Text: TG18N120BND S e m iconductor October 1998 Data Sheet 54A, 1200V, NPT Series N-Channel IGBT with Anti-Parallel Hyperfast Diode The TG18N120BND is a Non-Punch Through IGBT design. This is a new member of the MOS gated high voltage switching IGBT family. IGBTs combine the best


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