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    ZC SOT23 Search Results

    ZC SOT23 Result Highlights (1)

    Part ECAD Model Manufacturer Description Download Buy
    TBAW56 Toshiba Electronic Devices & Storage Corporation Switching Diode, 80 V, 0.215 A, SOT23 Visit Toshiba Electronic Devices & Storage Corporation

    ZC SOT23 Datasheets Context Search

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    2N3904S SOT-23

    Abstract: 2N3904S zc sot23 SOT 23 ZC ZC marking
    Text: SEMICONDUCTOR 2N3904S MARKING SPECIFICATION SOT-23 PACKAGE 1. Marking method Laser Marking 2. Marking No. 0 1 ZC 1 2 Item Marking Description Device Mark ZC 2N3904S hFE Grade - - * Lot No. 01 1998. 1st Week [0:1st Character, 1:2nd Character] Note * Lot No. marking method


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    PDF 2N3904S OT-23 2N3904S SOT-23 2N3904S zc sot23 SOT 23 ZC ZC marking

    FMMT4124

    Abstract: DSA003692
    Text: SOT23 NPN SILICON PLANAR SWITCHING TRANSISTOR ISSUE 2 – MARCH 94 FMMT4124 ✪ PARTMARKING DETAIL – ZC E C B ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL VALUE UNIT Collector-Base Voltage VCBO 30 V Collector-Emitter Voltage VCEO 25 V Emitter-Base Voltage VEBO


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    PDF FMMT4124 100MHz 140KHz 15KHz FMMT4124 DSA003692

    diode schottky code 10

    Abstract: marking 724 diode Schottky diode low voltage sot-23 marking code 1SS321
    Text: 1SS321 SILICON EPITAXIAL SCHOTTKY BARRIER DIODE For low voltage high speed switching application 3 Features • Low forward voltage • Low reverse current 1 2 Marking Code: "ZC" SOT-23 Plastic Package Absolute Maximum Ratings Ta = 25 OC Parameter Symbol


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    PDF 1SS321 OT-23 diode schottky code 10 marking 724 diode Schottky diode low voltage sot-23 marking code 1SS321

    zc marking code

    Abstract: 1SS321 zc marking diode
    Text: 1SS321 SILICON EPITAXIAL SCHOTTKY BARRIER DIODE For low voltage high speed switching application 3 Features • Low forward voltage • Low reverse current 1 2 Marking Code: "ZC" SOT-23 Plastic Package Absolute Maximum Ratings Ta = 25 OC Parameter Symbol


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    PDF 1SS321 OT-23 zc marking code 1SS321 zc marking diode

    1N916

    Abstract: 2N4124 MMBT4124
    Text: 2N4124 / MMBT4124 2N4124 MMBT4124 C E C B TO-92 B SOT-23 E Mark: ZC NPN General Purpose Amplifier This device is designed as a general purpose amplifier and switch. The useful dynamic range extends to 100 mA as a switch and to 100 MHz as an amplifier. Absolute Maximum Ratings*


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    PDF 2N4124 MMBT4124 2N4124 OT-23 1N916 MMBT4124

    Untitled

    Abstract: No abstract text available
    Text: 2N4124 / MMBT4124 2N4124 MMBT4124 C E C B TO-92 B SOT-23 E Mark: ZC NPN General Purpose Amplifier This device is designed as a general purpose amplifier and switch. The useful dynamic range extends to 100 mA as a switch and to 100 MHz as an amplifier. Absolute Maximum Ratings*


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    PDF 2N4124 MMBT4124 2N4124 OT-23

    SOT23 MARK Y3

    Abstract: No abstract text available
    Text: 2N4124 / MMBT4124 2N4124 MMBT4124 C E C B TO-92 B SOT-23 E Mark: ZC NPN General Purpose Amplifier This device is designed as a general purpose amplifier and switch. The useful dynamic range extends to 100 mA as a switch and to 100 MHz as an amplifier. Absolute Maximum Ratings*


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    PDF 2N4124 MMBT4124 2N4124 OT-23 2N4124BU 2N4124TA 2N4124TF 2N4124RA SOT23 MARK Y3

    2N4124

    Abstract: 2n4124 pspice
    Text: 2N4124 / MMBT4124 2N4124 MMBT4124 C E C B TO-92 B SOT-23 E Mark: ZC NPN General Purpose Amplifier This device is designed as a general purpose amplifier and switch. The useful dynamic range extends to 100 mA as a switch and to 100 MHz as an amplifier. Absolute Maximum Ratings*


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    PDF 2N4124 MMBT4124 2N4124 OT-23 O-92-3 2N4124BU 2N4124TA 2N4124TAR 2n4124 pspice

    2n3904 sot 23

    Abstract: No abstract text available
    Text: 2N4124 / MMBT4124 2N4124 MMBT4124 C E C B TO-92 B SOT-23 E Mark: ZC NPN General Purpose Amplifier This device is designed as a general purpose amplifier and switch. The useful dynamic range extends to 100 mA as a switch and to 100 MHz as an amplifier. Sourced from Process 23. See 2N3904


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    PDF 2N4124 MMBT4124 2N4124 OT-23 2N3904 2n3904 sot 23

    2N3904

    Abstract: 2N4124 MMBT4124 2N412 NPN sot23 mark NF
    Text: N 2N4124 MMBT4124 C E C TO-92 BE SOT-23 B Mark: ZC NPN General Purpose Amplifier This device is designed as a general purpose amplifier and switch. The useful dynamic range extends to 100 mA as a switch and to 100 MHz as an amplifier. Sourced from Process 23. See 2N3904


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    PDF 2N4124 MMBT4124 OT-23 2N3904 2N4124 2N3904 MMBT4124 2N412 NPN sot23 mark NF

    1N916

    Abstract: 2N4124 CBVK741B019 F63TNR MMBT4124 PN2222N
    Text: 2N4124 / MMBT4124 2N4124 MMBT4124 C E C B TO-92 B SOT-23 E Mark: ZC NPN General Purpose Amplifier This device is designed as a general purpose amplifier and switch. The useful dynamic range extends to 100 mA as a switch and to 100 MHz as an amplifier. Absolute Maximum Ratings*


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    PDF 2N4124 MMBT4124 2N4124 OT-23 1N916 CBVK741B019 F63TNR MMBT4124 PN2222N

    2n3904 npn fairchild

    Abstract: 2N3904 2N4124 MMBT4124 2n3904 sot 23 SOT23B
    Text: 2N4124 MMBT4124 C E C TO-92 BE SOT-23 B Mark: ZC NPN General Purpose Amplifier This device is designed as a general purpose amplifier and switch. The useful dynamic range extends to 100 mA as a switch and to 100 MHz as an amplifier. Sourced from Process 23. See 2N3904


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    PDF 2N4124 MMBT4124 OT-23 2N3904 2N4124 2n3904 npn fairchild 2N3904 MMBT4124 2n3904 sot 23 SOT23B

    1N916

    Abstract: 2N4124 CBVK741B019 F63TNR MMBT4124 PN2222N
    Text: 2N4124 / MMBT4124 2N4124 MMBT4124 C E C B TO-92 B SOT-23 E Mark: ZC NPN General Purpose Amplifier This device is designed as a general purpose amplifier and switch. The useful dynamic range extends to 100 mA as a switch and to 100 MHz as an amplifier. Absolute Maximum Ratings*


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    PDF 2N4124 MMBT4124 2N4124 OT-23 1N916 CBVK741B019 F63TNR MMBT4124 PN2222N

    FMMV105G

    Abstract: BAS70-05 BAS70-06 ZC2800E ZC2810E ZC2811E ZC5800E ZC830A ZC831A ZC832A
    Text: SOT-23 TRANSISTORS & DIODES SCHOTTKY BARRIER DIODES Type V br a t I r - 1 0 jA min. (Volts VF at lF-1mA max. (mV) 70 20 15 50 410 410 410 410 ZC 2800E ‘ ZC 2810E ZC 2811E ZC 5800E max. nA at VR (volts) 200 100 100 200 lF at VF-1V min. (mA) CratvR-0V f—1MHz


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    PDF OT-23 ZC2800E ZC2810E ZC2811E ZC5800E ZC2810E) Ir-10mA BAS70-05 BAS70-06 -3/C25 FMMV105G ZC830A ZC831A ZC832A

    Untitled

    Abstract: No abstract text available
    Text: SAMSUNG ELECTRONICS INC bOE » • 7^4142 TRANSISTORS 0Q11524 *i27 « S r i G K FUNCTION GUIDE SOT-23 Type Transistors Continued Condition D evio and Polarity (Marking) NPN VcEO (V) PNP KST1009F2(F2) KST1009F3(F3) KST1009F4(F4) KST1009F5(F5) KST4124(ZC)


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    PDF 0Q11524 OT-23 KST1009F2 KST1009F3 KST1009F4 KST1009F5 KST4124 KST4126 BCW29 O-92S

    KSC3488

    Abstract: KSC853 KSA953 KSC815
    Text: FUNCTION GUIDE TRANSISTORS SOT-23 Type Transistors Continued Condition Device and Polarity (Marking) NPN lc V ce lc (V) (A) (V) (mA) MIN MAX PNP KST1009F2(F2) KST1009F3(F3) KST1009F4(F4) KST1009F5(F5) KST4124(ZC) KST4126(C3) BCW29(C1) BCW31(D1) 1.1.2 V cE<*at), VBE tsatX V )


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    PDF OT-23 KST1009F2 KST1009F3 KST1009F4 KST1009F5 KST4124 KST4126 BCW29 BCW31 O-92S KSC3488 KSC853 KSA953 KSC815

    KSC815

    Abstract: No abstract text available
    Text: TRANSISTORS FUNCTION GUIDE SOT-23 Transistors Continued Device and Polarit(Marking) Condition NPN PNP KST1009F2(F2) KST1009F3(F3) KST1009F4(F4) KST1009F5(F5) KST4124(ZC) BCW 29(Ct) BCW31(D1) 1.1.2 (V) 25 25 25 25 25 20 20 V ce lc (A) (V) 3 3 3 3 1 (mA) MIN


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    PDF OT-23 KST1009F2 KST1009F3 KST1009F4 KST1009F5 KST4124 BCW31 O-92S KSA1150 KSA1378 KSC815

    MMBT4124

    Abstract: MMBT6515 MMPQ3904 MMPQ6700 PZT3904
    Text: This I tr in Material a fcH fc-> LU □ NPN Surface Mount General Purpose Amplifiers and Switches Device No. SOT-23 Mark Case Style a Copyrighted □ -C V CBO ^CEO v EBO (V) Min (V) Min (V) Min 25 5 MMBT4124 (ZC) TO-236 (49) 30 a _□ 03 MMBT6515 (3J) TO-236


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    PDF OT-23 MMBT4124 O-236 MMBT6515 MMPQ3904 SO-16 MMBT4124 MMBT6515 MMPQ6700 PZT3904

    Untitled

    Abstract: No abstract text available
    Text: S iM C O M D U C T O R 2N4124 MMBT4124 SOT-23 B Mark: ZC NPN General Purpose Amplifier This device is designed as a general purpose am plifier and switch. The useful dynam ic range extends to 100 m A as a switch and to 100 MHz as an amplifier. Sourced from Process 23. See 2N3904


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    PDF 2N4124 MMBT4124 2N4124 OT-23 2N3904

    Untitled

    Abstract: No abstract text available
    Text: 2N4124 / MMBT4124 * D iscrete POW ER & S ig n a l Technologies National S e m i c o n d u c t o r “ MMBT4124 2N4124 SOT-23 B Mark: ZC NPN General Purpose Amplifier This device is designed as a general purpose amplifier and switch. The useful dynam ic range extends to 100 m A as a switch and to


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    PDF 2N4124 MMBT4124 2N4124 OT-23 2N3904 bS01130

    2N4124 national

    Abstract: 2N3904 SOT-23 2N3904 2N4124 MMBT4124
    Text: 2N4124 / MMBT4124 D iscrete P O W E R & S ig n a l T echnologies National S e m ic o n d u c t o r '“ MMBT4124 2N4124 SOT-23 B Mark: ZC NPN General Purpose Amplifier This device is designed as a general purpose amplifier and switch. The useful dynamic range extends to 100 mA as a switch and to


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    PDF 2N4124 MMBT4124 OT-23 2N3904 2N4124 national 2N3904 SOT-23 2N4124 MMBT4124

    zc sot23

    Abstract: ZC2810E
    Text: ZC2800E ZC2811E ZC2810E ZC5800E SOT23 SCHOTTKY BARRIER DIODES PIN CONFIGURATION: PARTMARKING DETAILS ZC2800E - E6 ZC2810E - E7 ZC2811E - E8 à^ ZC5800E - E9 ABSOLUTE M A X IM U M RATINGS PARAMETER SYM BO L M a x. P ow er D issipation at Tamb = 2 5 ° C PTOT


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    PDF ZC2800E ZC2811E ZC2810E ZC5800E ZC5800E 2800E 2810E zc sot23

    IR1210

    Abstract: la 4725 ZC930
    Text: ZC930 SERIES SOT23 SILICON HYPERABRUPT VARIABLE CAPACITANCE DIODES ISSUE 6 - JANUARY 1998 Q FEATU RES * V H F T u n in g * O ctave T u n in g fro m 0 T O 6 V o lts * High R e lia b ility and L o w P a ra sitic s * L o w Leak ag e T y p ic a lly < 200pA at 10V


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    PDF 200pA ZC930 ZC931 50MHz IR1210 la 4725

    Diode Marking z3 SOT-23

    Abstract: dual diode marking A3 code J4 diode W6 13A Diode marking J6 transistors diode marking x6 sot-23 MARKING CODE j3 marking W6 diode BAV-99 j4 DIODE schottky sot 23
    Text: FERRANTI i semiconductors ZC830A Series S ilic o n Variable C ap a citan ce D iodes DESCRIPTION These silicon ion-im planted hyperabrupt tuning diodes are intended fo r use in HF, VH F and UHF electronic tuning and frequency control applications w here large capaci­


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    PDF ZC830A OT-23 C9/C20 50MHz ZC831A ZC832A ZC833A Diode Marking z3 SOT-23 dual diode marking A3 code J4 diode W6 13A Diode marking J6 transistors diode marking x6 sot-23 MARKING CODE j3 marking W6 diode BAV-99 j4 DIODE schottky sot 23