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    200PA Price and Stock

    IXYS Corporation DNA30E2200PA

    DIODE GEN PURP 2.2KV 30A TO220AC
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    DigiKey DNA30E2200PA Tube 334 1
    • 1 $5.59
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    Mouser Electronics DNA30E2200PA 4,635
    • 1 $4.68
    • 10 $3.56
    • 100 $2.77
    • 1000 $2.22
    • 10000 $2.17
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    TME DNA30E2200PA 476 1
    • 1 $3.54
    • 10 $3.03
    • 100 $2.56
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    New Advantage Corporation DNA30E2200PA 319 1
    • 1 -
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    • 100 $5.24
    • 1000 $4.89
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    IXYS Corporation DPG10I200PA

    DIODE GEN PURP 200V 10A TO220AC
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    DigiKey DPG10I200PA Tube 204 1
    • 1 $2.17
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    Mouser Electronics DPG10I200PA 90
    • 1 $2.09
    • 10 $1.17
    • 100 $1.05
    • 1000 $0.775
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    TME DPG10I200PA 190 1
    • 1 $1.63
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    Chip 1 Exchange DPG10I200PA 3,443
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    New Advantage Corporation DPG10I200PA 2,139 1
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    IXYS Corporation DHG20I1200PA

    DIODE GEN PURP 1.2KV 20A TO220AC
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    DigiKey DHG20I1200PA Tube 80 1
    • 1 $3.83
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    • 1000 $1.62025
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    Mouser Electronics DHG20I1200PA 35
    • 1 $3.83
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    • 100 $1.94
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    Newark DHG20I1200PA Bulk 77 1
    • 1 $3.98
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    • 100 $2.03
    • 1000 $1.71
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    TME DHG20I1200PA 30 1
    • 1 $3.06
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    • 1000 $1.98
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    TE Connectivity U5244-000005-200PA

    SENSOR
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    DigiKey U5244-000005-200PA Box 65 1
    • 1 $120.09
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    Avnet Americas U5244-000005-200PA Bulk 16 Weeks 10
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    • 100 $131.87415
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    Mouser Electronics U5244-000005-200PA 33
    • 1 $141.71
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    Onlinecomponents.com U5244-000005-200PA 9
    • 1 $163.51
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    TTI U5244-000005-200PA Bulk 10
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    • 100 $140.22
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    Interstate Connecting Components U5244-000005-200PA 5
    • 1 $168.8304
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    • 1000 $166.5792
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    Richardson RFPD U5244-000005-200PA 10
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    Avnet Abacus U5244-000005-200PA 14 Weeks 10
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    Master Electronics U5244-000005-200PA
    • 1 $163.51
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    Sager U5244-000005-200PA 10
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    • 100 $154.24
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    IXYS Corporation DHG10I1200PA

    DIODE GEN PURP 1.2KV 10A TO220AC
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    DigiKey DHG10I1200PA Tube 63 1
    • 1 $2.7
    • 10 $2.7
    • 100 $2.7
    • 1000 $1.03192
    • 10000 $1.03
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    Mouser Electronics DHG10I1200PA 98
    • 1 $2.7
    • 10 $1.47
    • 100 $1.33
    • 1000 $1.03
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    TME DHG10I1200PA 162 1
    • 1 $2.14
    • 10 $1.71
    • 100 $1.25
    • 1000 $1.21
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    Chip-Germany GmbH DHG10I1200PA 353
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    New Advantage Corporation DHG10I1200PA 100 1
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    Find more 200PA price and stock on Findchips.com

    200PA Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    Low Forward Voltage Diode

    Abstract: ZC829A DSA003721 MA330
    Text: SOT23 SILICON VARIABLE CAPACITANCE DIODE ZC829A ISSUE 3 – JANUARY 1998 FEATURES * VHF to UHF operation * Low IR * Enabling Excellent Phase Noise Performance * IR Typically <200pA at 25V APPLICATIONS * Mobile radios and Pagers * Cellular telephones * Voltage controlled Crystal Oscillators


    Original     		ZC829A 200pA V/20V, 50MHz Low Forward Voltage Diode ZC829A DSA003721 MA330 PDF

    ZMV934A

    Abstract: ZMV933A ZC934 "Variable Capacitance Diodes" ZC932 ZC933 ZMV930 ZMV931 ZMV932 ZMV933
    Text: ZMV930 SERIES SOD323 SILICON HYPERABRUPT VARIABLE CAPACITANCE DIODES ISSUE 1 - NOVEMBER 1998 ✪ FEATURES * VHF Tuning * Octave Tuning from 0 TO 6 Volts * High Reliability and Low Parasitics * Low Leakage Typically <200pA at 10V * Miniature Surface Mount Package


    Original     		ZMV930 OD323 200pA OD323 50MHz ZMV931 ZMV932 ZMV933 ZMV933A ZMV934A ZMV933A ZC934 "Variable Capacitance Diodes" ZC932 ZC933 ZMV930 ZMV931 ZMV932 ZMV933 PDF

    15I200PA

    Abstract: DIODE A30
    Text: DPG 15 I 200PA advanced V RRM = I FAV = t rr = HiPerFRED² High Performance Fast Recovery Diode Low Loss and Soft Recovery Single Diode 200 V 15 A 35 ns Part number DPG 15 I 200PA Backside: cathode Features / Advantages: Applications: Package: ● Planar passivated chips


    Original     		200PA 60747and 15I200PA DIODE A30 PDF

    10VA

    Abstract: No abstract text available
    Text: 7173-50 High Frequency Matrix Card The Model 7173-50 combines high fre­quen­cy per­for­mance with ex­cel­lent DC switching char­ac­ter­is­ tics. It provides 200MHz band­width in a 4x12 configuration. Offset voltage is <15µV per cross­point, and offset current is <200pA. The com­bined AC and DC ca­pa­bil­i­ties make it ideal for mixed signal


    Original     		200MHz 200pA. 100MHz 10VA PDF

    j4a diode

    Abstract: No abstract text available
    Text: SOT23 SILICON VARIABLE CAPACITANCE DIODE ZC829A ISSUE 3 – JANUARY 1998 FEATURES * VHF to UHF operation * Low IR * Enabling Excellent Phase Noise Performance * IR Typically <200pA at 25V APPLICATIONS * Mobile radios and Pagers * Cellular telephones * Voltage controlled Crystal Oscillators


    Original     		200pA ZC829A ZC829A ZC830A ZC831A ZC832A ZC833A ZC834A ZC835A j4a diode PDF

    Split System Air Conditioner

    Abstract: LT1634 LT1881 LT1881A LT1881CN8 LT1882 LT1884 LT1885
    Text: Final Electrical Specifications LT1881/LT1882 Dual and Quad Rail-to-Rail Output, Picoamp Input Precision Op Amps April 2000 DESCRIPTIO U FEATURES • ■ ■ ■ ■ ■ ■ ■ ■ ■ Offset Voltage: 50µV Maximum LT1881A Input Bias Current: 200pA Maximum (LT1881A)


    Original     		LT1881/LT1882 LT1881A) 200pA 1000pF LT1882 F4132 LT1112/LT1114 LT1677 LT1793 Split System Air Conditioner LT1634 LT1881 LT1881A LT1881CN8 LT1884 LT1885 PDF

    omega power amplifier circuit

    Abstract: LT1634 LT1881 LT1881A LT1881CN8 LT1882 LT1884 LT1885 marking s14 sot23
    Text: Final Electrical Specifications LT1881/LT1882 Dual and Quad Rail-to-Rail Output, Picoamp Input Precision Op Amps April 2000 DESCRIPTIO U FEATURES • ■ ■ ■ ■ ■ ■ ■ ■ ■ Offset Voltage: 50µV Maximum LT1881A Input Bias Current: 200pA Maximum (LT1881A)


    Original     		LT1881/LT1882 LT1881A) 200pA 1000pF LT1882 F4132 LT1112/LT1114 LT1677 LT1793 omega power amplifier circuit LT1634 LT1881 LT1881A LT1881CN8 LT1884 LT1885 marking s14 sot23 PDF

    10I200PA

    Abstract: No abstract text available
    Text: DPG 10 I 200PA advanced V RRM = I FAV = t rr = HiPerFRED² High Performance Fast Recovery Diode Low Loss and Soft Recovery Single Diode 200 V 10 A 35 ns Part number 3 DPG 10 I 200PA 1 Backside: cathode Features / Advantages: Applications: Package: ● Planar passivated chips


    Original     		200PA 60747and 10I200PA PDF

    j4a diode

    Abstract: ZC830B ZC830 ZC830A ZC831A ZC832A ZC833A ZC834A ZC835A ZC836A
    Text: ZC830/A/B to ZC836/A/B SOT23 SILICON VARIABLE CAPACITANCE DIODES ISSUE 5 – JANUARY 1998 1 FEATURES * Close Tolerance C-V Characteristics * High Tuning Ratio * Low IR Enabling Excellent Phase Noise Performance IR Typically <200pA at 25V 2 1 3 3 SOT23 ABSOLUTE MAXIMUM RATINGS.


    Original     		ZC830/A/B ZC836/A/B 200pA ZC830) ZC830B) ZC830 ZC830A ZC830B j4a diode ZC830B ZC830 ZC830A ZC831A ZC832A ZC833A ZC834A ZC835A ZC836A PDF

    diodes SY 200

    Abstract: ZC930
    Text: ZC930 SERIES SOT23 SILICON HYPERABRUPT VARIABLE CAPACITANCE DIODES ISSU E 4 - JUNE 1996 O FEATURES * VHP Tuning * Octave Tuning from 0 TO 6 Volts * High Reliability and Low Parasitics * Low Leakage Typically <200pA at 10V APPLICATIONS * Mobile Radios and Pagers


    OCR Scan     		200pA ZC930 ZC931 ZC932 ZC933 ZC933A ZC934 ZC934A 50MHz diodes SY 200 PDF

    lt1404

    Abstract: No abstract text available
    Text: i^ruum _ LT1464/LT1465 TECHNOLOGY D u a l/Q u a d M icropow er, 1MHz C-Load P ico am p ere Bias C urrent JFET Input O p Am ps F€flTUR€S D C S C R IP TIO n • Input Bias Current: 2pA Max LT1464A 20pA Max (LT1464, LT1465) ■ Supply Current per Amplifier: 200pA Max


    OCR Scan     		LT1464A) LT1464, LT1465) 200pA SO-14 LT1464/LT1465 LT1465 200joA 500fAtyp) 480pA lt1404 PDF

    Untitled

    Abstract: No abstract text available
    Text: urm LT1464/LT1465 TECHNOLOGY D u a l/Q u a d M icro p o w e r, 1MHz C -L o a d P ic o a m p e re Bias C u rre n t JFET In p u t O p A m ps F€fflUR€S DcscMpnon • Input Bias Current: 2pA Max LT1464A 20pA Max(LT1464, LT1465) ■ Supply Current per Amplifier: 200pA Max


    OCR Scan     		LT1464/LT1465 LT1464A) LT1464, LT1465) 200pA LT1465 500fA LT1464/LT1465 LT1457 000pF PDF

    ha5062

    Abstract: No abstract text available
    Text: CM CO o L f> I jJi HARRIS HA-5062 Series Low Power JFET Input Dual Operational Amplifiers Preliminary • H IG H IN P U T IM P E D A N C E 10’ 2 n • L O W IN P U T B I A S C U R R E N T 200pA • L O W IN P U T O F F S E T C U R R E N T 100pA • V E R Y L O W P O W E R C O N S U M P T IO N


    OCR Scan     		200/j 200pA 100pA HA-5062 50mV/Div. 2N4416 HP5082-2810 ha5062 PDF

    Untitled

    Abstract: No abstract text available
    Text: Specifications: Contact rating: Contact resistance: Insulation resistance: Dielectric strength: Temperature range: Mechanical life: Operating force: Mounting: Soldering conditions: Switching function: Material: max. 50mA, 48V AC/DC; min. 1pA, 20mV AC/DC 50mOhm max. at 1.5mA, 200pA AC


    OCR Scan     		50mOhm 200pA 500MOhm 500gf PDF

    Untitled

    Abstract: No abstract text available
    Text: 5V, 100mA Low Dropout Linear Regulator with WATCHDOG, RESET, & WAKE UP Description The CS8151 is a precision 5V, 100mA micro-power voltage regulator w ith very low quiescent current 400pA typical at 200pA load . The 5V output is accurate w ithin ±2% and supplies


    OCR Scan     		100mA CS8151 100mA 400pA 200pA 400mV. CS8151 CS8151YT7 PDF

    p708

    Abstract: P706T
    Text: iSO 9001 He P ow er M itered IM P706P/R/S/T/J, M P7Û 8R/S/T/J anagement Key Features 3/3.3/4.0V \iP Supervisor Circuits - Low supply c u r r e n t ; for Lower power, pin compatible replacements' Maxim MAX706P/R/S/T, MAX708R/S/T - 30% lower supply current: 140yA vs. 200pA


    OCR Scan     		P706P/R/S/T/J, MAX706P/R/S/T, MAX708R/S/T 140yA 200pA IMP706P/R, IMP708R) IMP706S, IMP708S) IMP706T, p708 P706T PDF

    Untitled

    Abstract: No abstract text available
    Text: ANALOG DEVICES INC SIE D • OßlbßOO 003bTE7 53b ■ -"T -7 ? - £ > - AN ALO G D EVICES ANA |<2> Low-Input-Current Operational Amplifiers PM-108/PM-208/PM-308 □ GENERAL DESCRIPTION FEATURES • Low Offset Current . 200pA Max


    OCR Scan     		003bTE7 PM-108/PM-208/PM-308 200pA RM-108A PM-108Aâ PDF

    Untitled

    Abstract: No abstract text available
    Text: ZC830/A/B SOT23 SILICON VARIABLE CAPACITANCE DIODES to ZC836/A/B r ISSUE 5 - JANUARY 1998 FE A T U R E S * Close Tolerance C-V Characteristics * High Tuning Ratio * Low lR Enabling Excellent Phase Noise Performance lR Typ ically <200pA at 25V 1 * 3 1 SOT23


    OCR Scan     		200pA ZC830/A/B ZC836/A/B brZC830A ZC831A ZC832A ZC833A ZC834A ZC835A ZC836A PDF

    TI7B

    Abstract: M28F256 PLCC32
    Text: / 3 T S G S -T H O M S O N M28F256 * J M , HD g»ilLli(g lii!lD i 256K (32K x 8, Chip Erase FLASH M E M O R Y • FAST ACCESS TIME: 90ns ■ LOW POWER CONSUMPTION - Standby Current: 200pA Max ■ 10,000 ERASE/PROGRAM CYCLES ■ 12V PROGRAMMING VOLTAGE


    OCR Scan     		M28F256 200pA PLCC32 M28F256 PLCC32 TI7B PDF

    X0303NG

    Abstract: X0303DG X0303BG X0303MG X0303 TAG SCR SCR TAG Semiconductors
    Text: TAG SEMICONDUCTORS LTD b3 8834750 TAG SEMICONDUCTORS LTD ]>e | AA347S0 D000705 2 63C 00705 X0303BG X0303NG SCR'S TAG SEM IC O N D U C T O R S LTD 3.3A 200-800V 20-200pA The X 0 3 0 3 series silicon controlled rectifiers are high performance PNPN devices diffused with TAG'S proprie­


    OCR Scan     		347S0 X0303BG -X0303NG 00-800V 20-200pA X0303 X0303BG X0303DG X0303MGI X0303NG X0303NG X0303MG TAG SCR SCR TAG Semiconductors PDF

    LM108

    Abstract: NZ17 LH2108 LM108AD lM1081 LM108T LM108AL LM108D LM108L
    Text: Operational Amplifiers LM108A/LH2108A LM108A/LH2108A Precision Operational Amplifiers Features • ■ ■ ■ ■ ■ Low input bias current — 2nA Low input offset current — 200pA Low input offset voltage — 500/nV Low input offset drift — 5juV/°C


    OCR Scan     		LM108 /LH2108 LM108A/LH2108A 200pA 500/xV 16-Lead Mil-Std-883B NZ17 LH2108 LM108AD lM1081 LM108T LM108AL LM108D LM108L PDF

    Untitled

    Abstract: No abstract text available
    Text: SOT23 SILICON VARIABLE CAPACITANCE DIODES ZC830/A/B to ZC836/A/B ISSUE 4 -JU N E 1996_ I FEATURES * Close Tolerance C-V Characteristics * High Tuning Ratio * Low lR Enabling Excellent Phase Noise Performance lRTypically <200pA at 25V .T ABSOLUTE MAXIMUM RATINGS.


    OCR Scan     		ZC830/A/B ZC836/A/B 200pA ZC836A ZC830) ZC830B) ZC830 ZC830A PDF

    diode J4S

    Abstract: ZC831 ZC834A ZC832A
    Text: SOT23 SILICON VARIABLE CAPACITANCE DIODES ISSUE 4-JU N E 1996 L . ZC830/A/B to -?Q836/ A/B FEATURES * Close Tolerance C-V Characteristics * High Tuning Ratio * Low iR Enabling Excellent Phase Noise Performance lR T ypically <200pA at 25V ABSOLUTE MAXIMUM RATINGS.


    OCR Scan     		200pA ZC830/A/B 50MHz ZC830) ZC830B) ZC830/A/B ZC836/A/B ZC830 ZC831 ZC832 diode J4S ZC834A ZC832A PDF

    DIODE AA116

    Abstract: aa117 diode
    Text: SCRs AA100-AA104 .5A, Planar AA114-AA118 FEATURES • Maximum Gate Trigger Current: 2, 20 or 200pA • Tight Gate Trigger Voltage Range: .44 to ,6V • Voltage R atin g s: to 400V AA107-AA111 DESCRIPTION This date sheet describes Microseml's A A Series 0.5A S C R s designed for low-current


    OCR Scan     		AA100-AA104 AA114-AA118 200pA AA107-AA111 200uA AA101 DIODE AA116 aa117 diode PDF