L934ID12V
Abstract: No abstract text available
Text: T-1 3mm RESISTOR LED LAMP Features z12 L934ID12V HIGH EFFICIENCY RED VOLT SERIES IN T-1 PACKAGES. zINTEGRAL zNO CURRENT LIMITING RESISTOR. EXTERNAL CURRENT LIMITER REQUIRED WITH 12 VOLT SUPPLY. zCOST EFFECTIVE - SAVE SPACE AND RESISTOR COST. zWIDE VIEWING ANGLE.
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L934ID12V
DSAA1796
JUN/11/2001
L934ID12V
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z12v
Abstract: No abstract text available
Text: T-1 3mm RESISTOR LED LAMP Features z12 L934YD12V YELLOW VOLT SERIES IN T-1 PACKAGES. zINTEGRAL zNO CURRENT LIMITING RESISTOR. EXTERNAL CURRENT LIMITER REQUIRED WITH 12 VOLT SUPPLY. zCOST EFFECTIVE - SAVE SPACE AND RESISTOR COST. zWIDE VIEWING ANGLE. zAVAILABLE
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L934YD12V
DSAA1798
JUN/11/2001
L934YD12V
z12v
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xck-p IEC 947.5.1
Abstract: XCS-Z11 XCS-Z13 xck-p 102 XCS-Z15 XCS-Z12 XCS-Z14 XCS-Z21 xps-fb resistencia electrica con
Text: +-tm XCS-PA/TA Safety interlock switch Interrupteurs de sécurité Sicherheits-Positionsschalter Interruptores de seguridad Interruttori di sicurezza Interruptores de segurança XCS-TA XCS-Z11 XCS-Z12 Radios de accionamiento de las llaves lengüetas
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XCS-Z11
XCS-Z12
XCS-Z11/Z12/Z14/Z15
XCS-Z15
XCS-Z21
XCS-TA89·
XCS-PA59·
W915263850111
XCS-Z12,
XCS-Z13
xck-p IEC 947.5.1
XCS-Z11
XCS-Z13
xck-p 102
XCS-Z15
XCS-Z12
XCS-Z14
XCS-Z21
xps-fb
resistencia electrica con
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L934GD12V
Abstract: optical resistor
Text: T-1 3mm RESISTOR LED LAMP Features z12 L934GD12V GREEN VOLT SERIES IN T-1 PACKAGES. zINTEGRAL zNO CURRENT LIMITING RESISTOR. EXTERNAL CURRENT LIMITER REQUIRED WITH 12 VOLT SUPPLY. zCOST EFFECTIVE - SAVE SPACE AND RESISTOR COST. zWIDE VIEWING ANGLE. zAVAILABLE
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L934GD12V
DSAA1797
JUN/11/2001
L934GD12V
optical resistor
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L934SGD12V
Abstract: No abstract text available
Text: T-1 3mm RESISTOR LED LAMP Features z12 L934SGD12V SUPER BRIGHT GREEN VOLT SERIES IN T-1 PACKAGES. zINTEGRAL zNO CURRENT LIMITING RESISTOR. EXTERNAL CURRENT LIMITER REQUIRED WITH 12 VOLT SUPPLY. zCOST EFFECTIVE - SAVE SPACE AND RESISTOR COST. zWIDE VIEWING ANGLE.
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L934SGD12V
DSAA1800
JUN/11/2001
L934SGD12V
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L934SRD12V
Abstract: No abstract text available
Text: T-1 3mm RESISTOR LED LAMP Features z12 L934SRD12V SUPER BRIGHT RED VOLT SERIES IN T-1 PACKAGES. zINTEGRAL zNO CURRENT LIMITING RESISTOR. EXTERNAL CURRENT LIMITER REQUIRED WITH 12 VOLT SUPPLY. zCOST EFFECTIVE - SAVE SPACE AND RESISTOR COST. zWIDE VIEWING ANGLE.
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L934SRD12V
DSAA1799
JUN/11/2001
L934SRD12V
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SMD marking Z12
Abstract: marking CM smd Z12 Z33 SMD z39 smd bidirectional zener diodes zener smd marking 51 CMZ30 zener smd marking smd z13
Text: • CM Z12 Series SMD Package Appearance Maxim um Ratings Characteristic Symbol Rating Unit Power Dissipation P 2 W Junction Temperature Tj 150 Storage Temperature Tstg -4 0 to 150 •c •c = 3^ I Zener Characteristics ¿ener impedance Measurement rd (O)
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CMZM16
SMD marking Z12
marking CM
smd Z12
Z33 SMD
z39 smd
bidirectional zener diodes
zener smd marking 51
CMZ30
zener smd marking
smd z13
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Untitled
Abstract: No abstract text available
Text: SAMSUNG ELECTRONICS INC b4E ]> • 7^4142 FEATURES • • • • • • • QGISSÔR 02Ô « S U G K P-CHANNEL POWER MOSFETS IRF9Z14/Z15 IRF9Z10/Z12 TO-220 Lower R d s o n Improved inductive ruggedness Fast switching times Rugged polysilicon gate cell structure
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IRF9Z14/Z15
IRF9Z10/Z12
O-220
IRF9Z10
7Tb4142
00122C
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MT1115F
Abstract: MT1115 MTI115F 115F
Text: MTI115F - CL FCR33.86M2G Udd= 5 EU] Fig.a~d Ta= 20 Ldeq] Load inq capoc itance dependence of osc i11at inq character ist ics (CL1-Z12) MT1115F - I CLI/CL2 [pF] Rf [Mohm] 7 5 3 - 5 / 5 1 a . UIH/UIL FCR33.86M2G Ta= 20 [deg] 0-0 T yp ica l «- K lilarst
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MTI115F
FCR33
86M2G
86M2G
MT1115F
MT1115
115F
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7580
Abstract: No abstract text available
Text: 3DUW1XPEHU .0': PP/ '&/867(5 www.SunLED.com HDWXUHV z122)%8,/7,1PP/('/$036 5('3&6 z:$7(53522)3$&.$*(:,7++22'68,7$%/( )25287'225$1',1'225,1)250$7,21%2$5'6 z&$1352'8&($1<&2/25,19,6,%/( 63(&7580,1&/8',1*:+,7(/,*+7 z5R+6&203/,$17
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Untitled
Abstract: No abstract text available
Text: 3DUW1XPEHU .6*: PP/ '&/867(5 www.SunLED.com 35(/,0,1$5<63( & HDWXUHV z122)%8,/7,1PP/('/$036 *5(13&6 z:$7(53522)3$&.$*(:,7++22'68,7$%/( )25287'225$1',1'225,1)250$7,21%2$5'6 z&$1352'8&($1<&2/25,19,6,%/( 63(&7580,1&/8',1*:+,7(/,*+7
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Untitled
Abstract: No abstract text available
Text: 3DUW1XPEHU .050*: PP/ '&/867(5 www.SunLED.com HDWXUHV z+,*+9,6,%,/,7< z(0,77,1*&2/25 5('$1'*5(1 z:$7(53522)3$&.$*(:,7++22'68,7$%/( )25287'225$1',1'225,1)250$7,21%2$5'6 z5R+6&203/,$17
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00LQ
Abstract: No abstract text available
Text: 3DUW1XPEHU ;.050*: PP/ '&/867(5 www.SunLED.com HDWXUHV z+,*+9,6,%,/,7< z(0,77,1*&2/25 5('$1'*5(1 z122)%8,/7,1PP/('/$036 683(5%5,*+75(' 3&6683(5%5,*+7*5(13&6 z:$7(53522)3$&.$*(:,7++22'68,7$%/( )25287'225$1',1'225,1)250$7,21%2$5'6
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Untitled
Abstract: No abstract text available
Text: 3DUW1XPEHU .0': PP/ '/$03&/867(5 www.SunLED.com HDWXUHV z+,*+9,6,%,/,7< z122)%8,/7,1PP/('/$036 5('3&6 z:$7(53522)3$&.$*(:,7++22'68,7$%/( )25287'225$1',1'225,1)250$7,21%2$5'6 *
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AGR045010
Abstract: AGRA10E AGRA10EU JESD22-C101A RF MOSFET CLASS AB
Text: Preliminary Data Sheet February 2004 AGRA10E 10 W, 100 MHz—1.0 GHz, N-Channel E-Mode, Lateral MOSFET Introduction 865 MHz to 895 MHz The AGRA10E is a broadband general-purpose, high-voltage, gold-metalized, laterally diffused metal oxide semiconductor LDMOS RF power transistor
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AGRA10E
AGRA10E
IS-95
DS04-096RFPP
DS03-161RFPP)
AGR045010
AGRA10EU
JESD22-C101A
RF MOSFET CLASS AB
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100B120JP500X
Abstract: 100B430JP500X 100B4R7CP500X AN1955 C1210C104K5RACTR MW4IC001MR4 RO4350 T491X226K035AS
Text: MOTOROLA Freescale Semiconductor, Inc. Order this document by MW4IC001MR4/D SEMICONDUCTOR TECHNICAL DATA The Wideband IC Line Freescale Semiconductor, Inc. RF LDMOS Wideband Integrated Power Amplifier MW4IC001MR4 The MW4IC001MR4 wideband integrated circuit is designed for use as a
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MW4IC001MR4/D
MW4IC001MR4
MW4IC001MR4
100B120JP500X
100B430JP500X
100B4R7CP500X
AN1955
C1210C104K5RACTR
RO4350
T491X226K035AS
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J293
Abstract: No abstract text available
Text: Freescale Semiconductor Technical Data MW4IC001N Rev. 5, 5/2006 RF LDMOS Wideband Integrated Power Amplifier MW4IC001NR4 The MW4IC001N wideband integrated circuit is designed for use as a distortion signature device in analog predistortion systems. It uses Freescales
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MW4IC001N
MW4IC001NR4
MW4IC001N
J293
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330 j73 Tantalum Capacitor
Abstract: 600S1 J162 600S100 100B4R7
Text: Freescale Semiconductor Technical Data MW4IC001MR4 Rev. 3, 1/2005 RF LDMOS Wideband Integrated Power Amplifiers MW4IC001NR4 MW4IC001MR4 The MW4IC001 wideband integrated circuit is designed for use as a distortion signature device in analog predistortion systems. It uses Freescale’s newest
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MW4IC001MR4
MW4IC001
MW4IC001NR4
MW4IC001MR4
330 j73 Tantalum Capacitor
600S1
J162
600S100
100B4R7
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J327
Abstract: 726 j68 j139
Text: Freescale Semiconductor Technical Data MW4IC001MR4 Rev. 3, 1/2005 RF LDMOS Wideband Integrated Power Amplifiers MW4IC001NR4 MW4IC001MR4 The MW4IC001 wideband integrated circuit is designed for use as a distortion signature device in analog predistortion systems. It uses Freescale’s newest
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MW4IC001MR4
MW4IC001
MW4IC001NR4
MW4IC001MR4
J327
726 j68
j139
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200B
Abstract: 20AWG 700B M252 SD57120
Text: SD57120 RF POWER TRANSISTORS The LdmoST FAMILY N-CHANNEL ENHANCEMENT-MODE LATERAL MOSFETs • EXCELLENT THERMAL STABILITY • COMMON SOURCE CONFIGURATION, PUSH-PULL • POUT = 120 W WITH 13 dB gain @ 960 MHz • BeO FREE PACKAGE M252 epoxy sealed • INTERNAL INPUT MATCHING
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SD57120
SD57120
TSD57120
200B
20AWG
700B
M252
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Untitled
Abstract: No abstract text available
Text: MOTOROLA Order this document by MRF6404/D SEMICONDUCTOR TECHNICAL DATA The RF Line MRF6404 The MRF6404 is designed for 26 volts microwave large signal, common emitter, class AB linear amplifier applications operating in the range 1.8 to 2.0 GHz. • Specified 26 Volts, 1.88 GHz Characteristics
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MRF6404/D
MRF6404
MRF6404
DCS1800
PCS1900/Cellular
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TRANSISTOR A331
Abstract: 395C-01
Text: MOTOROLA MRF6404 NPN Silicon RF Power Transistor LIFETIME BUY The MRF6404 is designed for 26 volts microwave large signal, common emitter, class AB linear amplifier applications operating in the range 1.8 to 2.0 GHz. • Specified 26 Volts, 1.88 GHz Characteristics
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MRF6404/D
MRF6404
DCS1800
PCS1900/Cellular
TRANSISTOR A331
395C-01
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TRANSISTOR A331
Abstract: No abstract text available
Text: MOTOROLA Order this document by MRF6404/D SEMICONDUCTOR TECHNICAL DATA The RF Line MRF6404 NPN Silicon RF Power Transistor The MRF6404 is designed for 26 volts microwave large signal, common emitter, class AB linear amplifier applications operating in the range 1.8 to
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MRF6404/D
MRF6404
DCS1800
PCS1900/Cellular
MRF6404
MRF6404/D
TRANSISTOR A331
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TRANSISTOR A331
Abstract: transistor 31C 37281 ADC 50 Ghz MRF6404K A153 A331 DCS1800 MRF6404 2.4 ghz 50 WATTS POWER AMPLIFIER SCHEMATIC
Text: MOTOROLA Order this document by MRF6404/D SEMICONDUCTOR TECHNICAL DATA MRF6404 MRF6404K The RF Line NPN Silicon RF Power Transistor The MRF6404 is designed for 26 volts microwave large signal, common emitter, class AB linear amplifier applications operating in the range 1.8 to
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MRF6404/D
MRF6404
MRF6404K
MRF6404
DCS1800
PCS1900/Cellular
MRF6404/D*
TRANSISTOR A331
transistor 31C
37281
ADC 50 Ghz
MRF6404K
A153
A331
2.4 ghz 50 WATTS POWER AMPLIFIER SCHEMATIC
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