Untitled
Abstract: No abstract text available
Text: SKiiP 26NAB065V1 CONVERTER, INVERTER, BRAKE Absolute Maximum Ratings Symbol Conditions IGBT - Inverter, Chopper M<DS .< .<1Z M/DS -? Q HG R<K 45%7* 2&97'8:*7 *B7?: :76 -* Q HG VWTX R< -¥ Diode - Inverter, Chopper MiniSKiiP 2 -* Q HG VWTX R< .P .P1Z -¥
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26NAB065V1
26NAB065V1
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YT-45 diode
Abstract: No abstract text available
Text: SKT 493 THYRISTOR BRIDGE,SCR,BRIDGE Capsule Thyristor Line Thyristor SKT493 Features # $%&'% * '%(+, *+-% .)(/ %0123 # # # )4-5,+(1& 6+0-5,% 0+*7+8% 91& :15;,% -):%: *11,)48 </+,1. :%-)84 .)(/ -)48,% -):%: *11,)48 =99>-(+(% +4: &%?%&-% ?1,(+8%- 50 (1 @ABB C
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SKT493
YT-45 diode
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FZ2400R17HP4
Abstract: No abstract text available
Text: Technische Information / technical information FZ2400R17HP4 IGBT-Module IGBT-modules IHM-B Modul mit soft schaltendem Trench-IGBT4 IHM-B module with soft-switching Trench-IGBT4 " # $ % & "' * + " ' ,-. * / 0 & '12 * / 3 • •8 4 0 5 4 $ $ 4 9 : 4 9$ •95
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FZ2400R17HP4
FZ2400R17HP4
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transistor smd zG
Abstract: diode 400mw 4v7 smd transistor marking wy smd diode marking 325 smd transistor marking zg ZD 5V6 zener SMD XW transistor smd za transistor smd zc wy smd transistor
Text: Diodes SMD Type Zener Diodes BZX284 Series SOD110 Unit: mm Features Total Power Dissipation: Max. 400mW Two Tolerance Series: 2% and cathode idenfifier 5% Working Voltage Range: Nom. 2.4 to 75V Absolute Maximum Ratings Ta = 25 Parameter Total Power Dissipation
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BZX284
OD110
400mW
BZX284
transistor smd zG
diode 400mw 4v7
smd transistor marking wy
smd diode marking 325
smd transistor marking zg
ZD 5V6
zener SMD XW
transistor smd za
transistor smd zc
wy smd transistor
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T74LS541
Abstract: No abstract text available
Text: r= 7 ^7# SG S-TTfO M SO N T74LS540 T74LS541 OCTAL BUFFER/LINE DRIVERS WITH 3-STATE OUTPUTS • PNP INPUTS REDUCE LOADING ■ 3-STATE OUTPUTS DRIVE BUS LINES ■ INPUTS AND OUTPUTS OPPOSITE SIDE OF PACKAGE, ALLOWING EASIERS INTERFACE TO MICROPROCESSOR ■ INPUT CLAMP DIODES LIMIT HIGH SPEED
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T74LS540
T74LS541
T74LS540/541
LS240
LS241,
T74LSXXXB1
T74LS540/541
T74LS541
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Untitled
Abstract: No abstract text available
Text: WSmftWX HWBBM’* -!'* $ $ £ ! Surface Mounting Device Single Diode Rectifier Diode •*WfN-äsH OUTLINE DIMENSIONS Package : 1F D1F60A + < Unit : mm -N - n y —YT—9 /Cathode mark 4.4±0-3 600V 1.2 A 3 ‘I "T 1 t 3 in Lo t- h' t c 4 v GD ! O CM 11 111 ’
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D1F60A
50HzJES&
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Untitled
Abstract: No abstract text available
Text: CD74HC138, CD74HCT138, CD74HC238, CD74HCT238 ^ Te x a s In s t r u m e n t s Data sheet acquired from Harris Semiconductor SCHS147A High Speed CMOS Logic 3-to-8 Line Decoder/ Demultiplexer Inverting and Non-Inverting October 1997 - Revised February 1999 Features
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CD74HC138,
CD74HCT138,
CD74HC238,
CD74HCT238
SCHS147A
HC/HCT238
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FSQS15A045
Abstract: 118T
Text: 15A 45V Tjw150V Fully Molded simitar to TO-220 FSQ S15A 045 tti* * Nihon Inter Electronics Corporation Specification -y h yT Schottky B arrier Diode Application H igh Frequency Rectification • I K Construction MAXIMUM RATINGS Ta=25°C: U nless otherw ise specified
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Tjw150V
O-220
FSQS15A045
/l-50Hz
FSQS15Ar
UL94V-0
118T
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SMD diode JB
Abstract: marking JB SCHOTTKY BARRIER DIODE Package Marking I60 DF30SC4M lupx SHINDENGEN DIODE
Text: Schottky Barrier Diode Twin Diode mnm DF30SC4M o u t lin e 40V 30A Feature • SM D • SM D • PR RSM • P r r s m Rating • / jv s fc fc œ s s » • High lo R ating-Sm all-R KG • D C /D C • Sw itching Regulator • D C /D C Converter Main Use • m m . y - h . O A m ss
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DF30SC4M
STO-220
SMD diode JB
marking JB SCHOTTKY BARRIER DIODE
Package Marking I60
DF30SC4M
lupx
SHINDENGEN DIODE
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smd diode marking UJ
Abstract: NA05HSA08 smd diode marking code UJ NA05HSA12 smd diode UJ 09 smd diode Uj smd diode schottky code marking 5A NA05HSA065 SMD CODE uj smd diode code MK
Text: i / 3 'y h 5 A 8 0 V T jw 1 5 0 V —y f 1/ 7 * — f' Schottky Barrier Diode ^ ^ ^ 0 ^ [""I 3 ~ fX 43 < * ^ M D Tj/p Nihon Inter Electronics Corporation Specification flfìi ’> 3 Construction ffliás Application C^V /îifê' 'y b K rWiMliSiSlftitffl High frequency rectification
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Tjw150V
NA05HSA065
NA05HSA08
NA05HSA12
UL94V-0
Snl00%
smd diode marking UJ
NA05HSA08
smd diode marking code UJ
NA05HSA12
smd diode UJ 09
smd diode Uj
smd diode schottky code marking 5A
NA05HSA065
SMD CODE uj
smd diode code MK
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Untitled
Abstract: No abstract text available
Text: BZY97. Silicon Power Zener Diodes for use in stabilizing and clipping circuits with high power rating. The Zener voltages are graded according to the international E 24 standard. Smaller voltage tolerance on request. - Cathode Mark DO-41 P lastic Package Weight approx. 0.34 g
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BZY97.
DO-41
BZY97_
--------200V
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Untitled
Abstract: No abstract text available
Text: SUBMINIATURE SOLID STATE LAMPS Kingbright KM2520EJ/1 KM2520EJ/1-5V Features Description •HIGH RELIABILITY The Super Green source color devices are made with •BLACK CASE ENHANCES CONTRAST. Gallium Phosphide Green Light Emitting Diode. •VIBRATION AND SHOCK RESISTANT.
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KM2520EJ/1
KM2520EJ/1-5V
3-KM25EJ-5
3-KM25EJ-6
3-KM25EJ-7
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Untitled
Abstract: No abstract text available
Text: ~T=Í TOSHIBA íDISCRETE/OPTOJ 9097250 TOSHIBA DISCRETE/OPTO f/Zìhìhn DE I ^ O ^ ï a S O 99D 16890 □ Dlbfl'ìG DT-B^-n TOSHIBA FIE L D EFFECT TRANSISTOR YT F 8 2 3 SIL IC O N N CHANNEL MOS TYPE SEMICONDUCTOR TECHNICAL DATA (DUMOSE) HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS.
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500nA
250pA
250pA
CHARACTERIST225V
00A/us
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Untitled
Abstract: No abstract text available
Text: S /a v M P — JVJT K Schottky Barrier Diode Single Diode O U T L IN E D IM E N S IO N S Case * 2F Type D2FS4 CD o-N — ° U n it • mm i i v —K v —7 / C ath o d e m ark 4 0 V 1.6A GO Lx. % %'4 °-t -I GO CM 2f5J I T y p e No. 6.1 V ; i/ ^ - U > ^ V N°-yT O # # / < 3 - >
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3Z47
Abstract: 3Z15 3Z33 351 zener diode 3Z27 DIODE 3Z12 3Z36
Text: SILICON DIFFUSED TYPE ZENER DIODE 3Z123Z390 Unit in mm VOLTAGE DETECTOR A N D SUPPRESSOR APPLICATIONS. • • • • • Average Power Dissipation Peak Reverse Power Dissipation Zener Voltage Tolerance of Zener Voltage Plastic Mold Package P = 3W PRSM = 1500W / lm s expo
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3Z123Z390
DO-201AD
3Z390
CHARACTER10
3Z47
3Z15
3Z33
351 zener diode
3Z27 DIODE
3Z12
3Z36
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PCR001
Abstract: 905-118-5000
Text: I m LASEL £ i ^ J INC 15E D I 5302^05 0000^ 0 0 I IRE-161 L/% Sp ^ , o o E IRE-331,332,333 LASER DIODE INC- IRE-160FA, FB_ r 830nm SURFACE EMiniNG LED 3 FEATURES ► Excellent Reliability
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IRE-161
IRE-331
IRE-160FA,
830nm
PCR001
905-118-5000
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Zener diode ZPY 18
Abstract: Zener diode ZPY 30 ZP33 2PY39 ZPY100 Diode Zener - ZPY Zener diode ZPY 39 Zener diode ZPY 51 Zener diode ZPY 75 Zener diode ZPY 36
Text: ZPY1 . ZPY100 Silicon P la n a r Z en e r Diodes for use in stabilizing and clipping circuits with high power rating. The Zener voltages are graded according to the international E 24 standard. Smaller voltage tolerances on request. - Cathode Mark These types are also available in M ELF case with the type
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ZPY100
ZMY100.
DO-41
100mA
Zener diode ZPY 18
Zener diode ZPY 30
ZP33
2PY39
ZPY100
Diode Zener - ZPY
Zener diode ZPY 39
Zener diode ZPY 51
Zener diode ZPY 75
Zener diode ZPY 36
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SLR-34VR
Abstract: SLR34VR SLR34MG SLR-34MG SLR-34 SLR34VC 34DU SLR34YY SLR-34YY SLR-34MC
Text: • □ [107354 ITT ■ RHN K /L ig h t Emitting Diodes -f Q| p *% A !■ ■ ■ " O " » SLR-34 Series $ 3.1mm Small-Sized Reflecting Lamps S e r ie s • il-J fN 'jill/D im ension s Unit : mm) S L R -3 4 -> ') - X l i , £ S ffl b , ± 11 4 m J f f t - t 1C $ Bb U tz i l Iffl W 4'
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SLR-34
Fi9-25
00073bD
SLR-34VR
SLR34VR
SLR34MG
SLR-34MG
SLR34VC
34DU
SLR34YY
SLR-34YY
SLR-34MC
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Untitled
Abstract: No abstract text available
Text: ~V l TOSHIBA { DI SC RE TE /OPT O? ÍF |tD T 7 S S D 0Glt,7ci2 4 | ~ 9097250 TOSHIBA DISCRETE/OPTO ¿/oSuba TO SH IBA F IE L D EFFECT TR A N SISTO R YT F 2 3 2 S IL IC O N N CHANNEL MOS TYPE ( T[-M O S E ) SEMICONDUCTOR TECHNICAL DATA HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS.
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100nA
250uA
250uA
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Untitled
Abstract: No abstract text available
Text: ’7fl2flcJcH -f Q00fl03cJ 513 • R H U K /L ig h t Emitting Diodes SLN-210 ^ S e r ie s aeries SLN-210 Series S ^ Molded - ^ MLEDs LED Mini ' #Hg^J"^@ /Dim ensions Unit : mm c i±j r 1) m m ì f m t T ’& z t' 5 tz#>, . 2) fflàÉ C Jfc C tz 3 S i 7 * -
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Q00fl03c
SLN-210
SLN-210
55fci
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Untitled
Abstract: No abstract text available
Text: CD74HC373, CD74HCT373, CD54HC573, CD74HC573, CD74HCT573 November 1997 High Speed CMOS Logic Octal Transparent Latch, Three-State Output Features Description • Common Latch Enable Control The Harris CD74HC373, CD74HCT373, CD54HC573, CD74HC573, and CD74HCT573 are high speed Octal Trans
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CD74HC373,
CD74HCT373,
CD54HC573,
CD74HC573,
CD74HCT573
CD74HCT573
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Untitled
Abstract: No abstract text available
Text: SDP8406 Silicon Phototransistor FEATURES • Side-looking plastic package • 50° nominal acceptance angle . Wide sensitivity ranges • Mechanically and spectrally matched to SEP8506 and SEP8706 infrared emitting diodes DESCRIPTION The SDP8406 is an NPN silicon phototransistor molded
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SDP8406
SEP8506
SEP8706
SDP8406
00ES5MC
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CD74HC138
Abstract: No abstract text available
Text: CD74HC138, CD74HCT138, CD74HC238, CD74HCT238 w Texas In s t r u m e n t s Data sheet acquired from Harris Sem iconductor SCH S147A High Speed CMOS Logic 3-to-8 Line Decoder/ Demultiplexer Inverting and Non-Inverting October 1997 - Revised February 1999 Features
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S147A
CD74HC138,
CD74HCT138,
CD74HC238,
CD74HCT238
CD74HC138
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diode KIV 62
Abstract: DIODE KIV DIODE KIV 4 kiv 49 diode diode KIV 225 KIV* diode vub 70 -16 n01 diode KIV 8 25/85/KIV* diode diode KIV 70
Text: □IXYS Three Phase Rectifier Bridge VUB 60 with IGBT and Fast Recovery Diode for Braking System V RRM IdA V M 1200-1600 V 70 A n VRRM Type 1 o- V 7 o- 1200 1600 Symbol VUB 6 0 -1 2 N01 VUB 6 0 -1 6 N01 Test Conditions n ii Maximum Ratings 1 2 0 0 /1 6 0 0
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