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    Y21B Price and Stock

    Lucky Light Electronics Co Ltd LL-S170UYC-Y2-1B

    LED; SMD; 0805; yellow; 85÷120mcd; 2x1.25x1.1mm; 120°; 1.6÷2.4V
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    TME LL-S170UYC-Y2-1B 8,990 10
    • 1 -
    • 10 $0.06
    • 100 $0.0314
    • 1000 $0.0169
    • 10000 $0.0157
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    Lucky Light Electronics Co Ltd LL-S192UYC-Y2-1B

    LED; SMD; 0603; yellow; 80÷120mcd; 1.6x0.8x0.6mm; 130°; 1.6÷2.4V
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    TME LL-S192UYC-Y2-1B 8,690 10
    • 1 -
    • 10 $0.0576
    • 100 $0.0281
    • 1000 $0.0136
    • 10000 $0.0123
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    Lucky Light Electronics Co Ltd LL-S150UYC-Y2-1B

    LED; SMD; 1206; yellow; 100÷150mcd; 3.2x1.6x1.1mm; 120°; 1.6÷2.4V
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    TME LL-S150UYC-Y2-1B 5,760 10
    • 1 -
    • 10 $0.06
    • 100 $0.0385
    • 1000 $0.025
    • 10000 $0.02
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    Y21B Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    ujt 2646

    Abstract: TRANSISTOR J 5804 label infineon barcode msc 1697 MSC 1697 IC pin diagram Rohde und Schwarz Active Antenna HE 011 cd 6283 audio smd transistor v75 log tx2 0909 IC data book free download
    Text: D a t a B o o k , J a n. 20 0 1 GaAs Components N e v e r s t o p t h i n k i n g . Edition 2001-01-01 Published by Infineon Technologies AG, St.-Martin-Strasse 53, D-81541 München, Germany Infineon Technologies AG 2001. All Rights Reserved. Attention please!


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    PDF D-81541 14-077S Q62702-D1353 Q62702-G172 Q62702-G173 ujt 2646 TRANSISTOR J 5804 label infineon barcode msc 1697 MSC 1697 IC pin diagram Rohde und Schwarz Active Antenna HE 011 cd 6283 audio smd transistor v75 log tx2 0909 IC data book free download

    mosfet p321

    Abstract: motorola an215a application Y12t Using Linvill Techniques AN166 linvill H12C TRANSISTOR MAKING dual-gate YB motorola an215a Y parameters of transistors y11t
    Text: MOTOROLA Freescale Semiconductor, Inc. Order this document by AN215A/D SEMICONDUCTOR APPLICATION NOTE AN215A RF Small Signal Design Using TwoĆPort Parameters Freescale Semiconductor, Inc. Prepared by: Roy Hejhall INTRODUCTION GENERAL DESIGN CONSIDERATIONS


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    PDF AN215A/D AN215A mosfet p321 motorola an215a application Y12t Using Linvill Techniques AN166 linvill H12C TRANSISTOR MAKING dual-gate YB motorola an215a Y parameters of transistors y11t

    SMD Transistor Y12

    Abstract: transistor Common Base configuration g21 SMD Transistor SMD transistor y11 Y22 transistor smd smd transistors code book SMD Transistor Y22 "tunnel diode" oscillator SMD H21 applications of ujt
    Text: Technical Information Type Designation in Accordance with Pro Electron 1 Type Designation in Accordance with Pro Electron This type designation applies to small-signal semiconductor components – in contrast to integrated circuits, multiples of these components and semiconductor chips.


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    AN215A

    Abstract: mosfet p321 Y12t Using Linvill Techniques common base amplifier circuit designing Using Linvill Techniques for R. F. Amplifiers y11t h21b Y12F common emitter amplifier circuit designing
    Text: Order this document by AN215A/D MOTOROLA SEMICONDUCTOR APPLICATION NOTE AN215A RF SMALL SIGNAL DESIGN USING TWO-PORT PARAMETERS Prepared by: Roy Hejhall INTRODUCTION GENERAL DESIGN CONSIDERATIONS Design of the solid-state, small-signal RF amplifier using two-port parameters is a systematic, mathematical procedure, with an exact solution free from approximation


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    PDF AN215A/D AN215A AN215A mosfet p321 Y12t Using Linvill Techniques common base amplifier circuit designing Using Linvill Techniques for R. F. Amplifiers y11t h21b Y12F common emitter amplifier circuit designing

    UJT APPLICATION

    Abstract: SMD Transistor Y12 "tunnel diode" oscillator SMD transistor y11 Y22 transistor smd SMD Transistor g22 y22c NF50 y-parameter Technical Explanations power transistor
    Text: Technical Information 1 Type Designation in Accordance with Pro Electron This type designation applies to small-signal semiconductor components – in contrast to integrated circuits, multiples of these components and semiconductor chips. The number of the basic type consists of: two letters and a three-digit code.


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    transistor smd bc rn

    Abstract: SMD transistor y11 g21 SMD Transistor SMD Transistor Y12 SMD transistor BC RN transistor ic equivalent book smd y12 GaAs tunnel diode Common collector configuration basic applications of ujt
    Text: GaAs Components Technical Information 3 Technical Information 3.1 Type Designation in Accordance with Pro Electron This type designation applies to small-signal semiconductor components – in contrast to integrated circuits, multiples of these components and semiconductor chips.


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    Katalog CEMI

    Abstract: OA81 diode byp 660-50r Philips BC147 p 181 transoptor Mullard oa81 Hitachi 12V MS 5A-181 OA81 BA102 diode telefunken hr 780 rds
    Text: WSTIJP W ydaw nictw a Przem yslu M aszynowego WEMA przekazujq uzytkow nikom branzow y katalog pt. E l e m e n t y pólp rz e w o d n i k o w e , zaw ierajqcy dokladne inform acje techniczne dotycz^ce elem entów pólprzew odnikow ych produkow anych w Polsce n a skal^ przem yslow ^. W szystkie w yroby


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    IAO5 Sharp

    Abstract: free transistor equivalent book 2sc siemens transistor asy 27 Diode BAY 61 TRANSISTOR BJ 131-6 tesla typ 202 thyristor Tesla z1072 HALL EFFECT 21E z1071
    Text: SIEM EN S Semiconductor Manual Discrete Industrial Types 1974 ACY 23, ACY 32 PNP Transistors for AF pre-stages The ACY 23 and ACY 32 are alloyed germanium PNP transistors in the case 1 A 3 DIN 41871 sim. TO -1 . The leads are electrically insulated from the case. The


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    PDF Q60103- thS10 to3530 to4600 to4600 IAO5 Sharp free transistor equivalent book 2sc siemens transistor asy 27 Diode BAY 61 TRANSISTOR BJ 131-6 tesla typ 202 thyristor Tesla z1072 HALL EFFECT 21E z1071

    AFY16

    Abstract: Germanium Transistor 71lb 21b22
    Text: AFY16 PNP Transistor for RF-application up to 900 MHz The A FY 16 is a germanium PNP RF mesa transistor in a case 18 A 4 DIN 41 876 TO-72 . The terminals are electrically insulated from the case. The AFY 16 is designed for use in pre-stages as well as in mixer and oscillator stages up to 900 MHz.


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    PDF AFY16 AFY16 18A4DIN41876 Q60106 f-200 Germanium Transistor 71lb 21b22

    3866S

    Abstract: BF247 equivalent brochage des circuits integres Triac GK transistor bc 564 BC547E TI Small Signal FET Catalogue bcw 91 transistor SESCO SESCOSEM
    Text: GENERAL INFORMATION , , v^ INFORMATION GENERALE ” ; V Index Index 3 ' v.»A* K \ a 1 Selection guide Guide de sélection Qualified devices Dispositifs homologués Quality Qualité Symbols Symboles DATA SHEETS NOTICES SILICON SIGNAL TRANSISTORS TRANSISTORS DE SIGNAL AU SILICIUM


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    BF180

    Abstract: s21b BF180 TRANSISTOR s parametres s22b bf 180 CE 470 10V J BF180 MAX S21B est 504
    Text: * B F 180 NPN SILICON TRANSISTOR, PLANAR TRANSISTOR NPN S ILIC IU M , PLAN A R % Preferred device D is p o s itif recom m andé The NPN planar transistor BF 180 is intended for use in UHF amplifier stages of T V receivers AGC controlled stages . Le transistor planar NPN BF 180 est destiné à être u ti­


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    PDF BF180 BF180 s21b BF180 TRANSISTOR s parametres s22b bf 180 CE 470 10V J BF180 MAX S21B est 504

    catalogue des transistors bipolaires de puissance

    Abstract: brochage des circuits integres H3C1-07 LB 124 transistor equivalente transistor A2222 equivalent of transistor bc212 bc 214 BFw-11 terminals SESCOSEM transistor equivalente transistor BC 141 Brochage BCW91
    Text: GENERAL INFORMATION , , v^ INFORMATION GENERALE ” ; V Index Index 3 ' v.»A* K \ a 1 Selection guide Guide de sélection Qualified devices Dispositifs homologués Quality Qualité Symbols Symboles DATA SHEETS NOTICES SILICON SIGNAL TRANSISTORS TRANSISTORS DE SIGNAL AU SILICIUM


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    MHW721A2

    Abstract: 13001 S 6D TRANSISTOR atv5030* motorola 2N5591 MOTOROLA 13001 6D TRANSISTOR BGY41 MHW710-1 construction linear amplifier 2sc1945 7119 amperex bf503
    Text: Volume I Selector Guide 1 Discrete Transistor Data Sheets 2 Case Dimensions 3 Volume II Selector Guide Amplifier Data Sheets 5 Tuning, Hot Carrier and PIN Diode Data Sheets 6 Technical Information Case Dimensions 8 Cross Reference and Sales Offices 9 MOTOROLA RF DEVICE DATA


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    PDF 1PHX11136Q-14 MHW721A2 13001 S 6D TRANSISTOR atv5030* motorola 2N5591 MOTOROLA 13001 6D TRANSISTOR BGY41 MHW710-1 construction linear amplifier 2sc1945 7119 amperex bf503

    X2081

    Abstract: No abstract text available
    Text: Rectipoint Silicon Power Rectifiers £ Dia. AC F Dla. - F 0io.(+) ri D im e n sio n s X Type c L . Inches rx E Dio. AC F Oia.(—) - F DÎO-C+) TT L Y Type ,P T ^ ~ c A 8 C D E F G K L M N P Q Millimeters 109.4 4.31 .625 15.87 4.0 101.6 3.12 79.2 .201 5.10


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    PDF 3/16x5/16 5/16-18UN 3/16x5/16----- Y20-B1-1 Y21-B1-1 Y20-Z1-1 Y21-Z1-1 X20-81-1 X21-B1-1 34-B1-1 X2081

    s22b

    Abstract: bf181 s21b b 514 transistor bf 181 bf181 transistor ic s21b J BF181 MAX S21B
    Text: *BF181 NPN S IL IC O N T R A N S IS T O R , P LA N A R TRANSISTOR NPN S ILIC IU M , PLANAR sfc Preferred device D isp o sitif recommandé The NPN plan transi to r BF 181 is intended for use in U H F converter and oscillator stages television receivers. Le transistor plan NPN BF 181 est destiné à être u tili­


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    PDF BF181 s22b bf181 s21b b 514 transistor bf 181 bf181 transistor ic s21b J BF181 MAX S21B

    BF180

    Abstract: bf181 BF200 8F180 hg1e BF182 tranzystor J BF181 CE25 T072
    Text: T R A N Z Y S T O R Y n-p-n * BF180, BF181, BF200 14 - 74/2 SWW 1156-214 T ra n z y sto ry k rz em o w e p la n a r n e m a le j m ocy b a rd zo w ie lk ie j cz^stotliw oáci. T ra n z y sto r BF180 je st p rz ez n ac zo n y do sto so w an ia w r e gu lac y jn y ch sto p n iac h w zm acn iaczy U H F w glow icach


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    PDF BF180, BF181, BF200 BF180 BF181 BF200 BF180 8F180 hg1e BF182 tranzystor J BF181 CE25 T072

    18-UNC

    Abstract: 411B .411b y 30-BRIDGE
    Text: Rectipoint Silicon Power Rectifiers D im e n sio n s Y Type X Type Inches A B C E F G K L M N P Q M illim eters 4.31 109.4 .625 15.87 4.0 101.6 3.12 79.2 .201 5.10 .265 6.731 3 / 8 -1 6UNC-3A 3.93 15.87 1.5 101.6 .281 79.2 .875 5.10 .625 6.731 3 /1 6 x 5 / 1 6 -


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    PDF Y20-B1-1 Y21-B1-1 Y20-Z1-1 Y21-Z1-1 X21-B1-1 X34-B1-1 X37-B1-1 X20-Z1-1 X34-Z1-1 X37-Z1-1 18-UNC 411B .411b y 30-BRIDGE

    transistor c2060

    Abstract: Transistor Shortform Datasheet & Cross References 1N4465 C1906 transistor Germanium itt 3N58 IN939 MC1230F 2N3866 MOTOROLA C943 transistor
    Text: Data Book Updating Service I Table of Contents How to Use the Data Book I > INTRODUCTION Complete I N . . . INDEX numerical index o f all ElA-registered device types, with major electrical specifications 2N . . . & 3N . . . INDEX Complete numerical index of all ElA-registered device types,


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    PDF AN-134 transistor c2060 Transistor Shortform Datasheet & Cross References 1N4465 C1906 transistor Germanium itt 3N58 IN939 MC1230F 2N3866 MOTOROLA C943 transistor

    BF 183 transistor

    Abstract: BF183 BF 528 transistor bf 175 Y21b y12b Oscillator CQE pour Y22b transistor BF 450
    Text: BF 183 NPN SILICO N TRA N SISTO R, E P IT A X IA L PLAN AR T R A N S IS T O R NPN S IL IC IU M , P L A N A R E P IT A X IA L The NPN planar epitaxial BF 183 i; intended for use in V H F oscillator stages of television recei­ vers and generally for all V H F-U H F uses.


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    PDF -c12e BF 183 transistor BF183 BF 528 transistor bf 175 Y21b y12b Oscillator CQE pour Y22b transistor BF 450

    Katalog tesla tranzistor

    Abstract: OC26 Tesla katalog GS507 156NU70 TESLA 102NU71 GF-50 OC30 Tesla 2NU74
    Text: È o n s ìr n k É iii h i a l o j f germanìovych tranzistoru T E S L 4 R O Z N O V K O N S T R' U K C N I K A T A L O G P O LO V O D I C O VŸC H S O U C A S T E K TESLA SVAZEK B Export: Koro D ep. 8 P R A H A 10 C Z EC H O SLO V AKIA Konstrukcní katalog polovodicovycti soucástek


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    PDF TT346B AF139) TT346E IT346B Katalog tesla tranzistor OC26 Tesla katalog GS507 156NU70 TESLA 102NU71 GF-50 OC30 Tesla 2NU74

    AFY42

    Abstract: U120 103MHZ 400M GR22B Germanium Transistor Germanium mesa SZ2B
    Text: AFY42 PNP Mesa transistor for pre-stages, mixer and oscillator stages up to 900 MHz AFY 42 is a germanium PNP mesa transistor in a case 18 A 4 DIN 41 876 TO —72 . The leads are electrically insulated from the case. It is particularly suitable for use in


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    PDF AFY42 AFY42 60106-Y BIfi03 U120 103MHZ 400M GR22B Germanium Transistor Germanium mesa SZ2B

    GS507

    Abstract: Katalog tesla tranzistor Tesla katalog OC169 TRANZISTOR CATALOG GS506 156NU70 GS508 OC170 OC30 Tesla
    Text: in t in t ili it t ilif germaniovvch tranzistorû T E IIA ROZNOV K O N S T R' U K C N I K A T A L O G P O LO V O D I C O VŸC H S O U C A S T E K TESLA SVAZEK B Export: Koro D ep. 8 P R A H A 10 C Z EC H O SLO V AKIA Konstrukcní katalog polovodicovycti soucástek


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    PDF R02N0V TT346B AF139) GS507 Katalog tesla tranzistor Tesla katalog OC169 TRANZISTOR CATALOG GS506 156NU70 GS508 OC170 OC30 Tesla

    MC789P

    Abstract: MC946F/MC789P l9945 mc2100 els MC1110G mc787p MC879P SG4002 MC779P MC892P
    Text: GENERAL INFORMATION Index Interchangeability Guide Digital Circuits A p p lications Selector Guide MECL M ECL M C300/M C 350 Series MECL II M C 1000/M C 1200 Series MHTL MC660 Series MTTL M T T L M C500/M C400 Series M T T L II M C2100/M C2000 Series M T T L III M C3000 Series


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    PDF C300/M 1000/M MC660 C500/M C2100/M C2000 C3000 930/M C200/M C900/M MC789P MC946F/MC789P l9945 mc2100 els MC1110G mc787p MC879P SG4002 MC779P MC892P

    BF194

    Abstract: BF195 bf 194 BF131 BF-131 BP195 GA2E
    Text: 16-71/2 T R A N Z Y S T O R Y n-p-n % BF194 i BF195 SWW 1156-213 T ra n z y sto ry k rz em o w e e p ip la n a rn e m ale j m ocy w ie lk ie j czQstotliwosci. S 3 przezn aczo n e do sto so w an ia : — w sto p n iac h w ejéciow ych w z ak re sie fa l diu g ich , é red n ich i k rô tk ic h w o d b io rn ik a c h ra d io w y c h AM


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    PDF BF194 BF195 BF195 bf 194 BF131 BF-131 BP195 GA2E