1N914
Abstract: M28F256 PDIP32 PLCC32 memory write protect m28f512
Text: M28F256 256K 32K x 8, Chip Erase FLASH MEMORY FAST ACCESS TIME: 90ns LOW POWER CONSUMPTION – Standby Current: 100µA Max 10,000 ERASE/PROGRAM CYCLES 12V PROGRAMMING VOLTAGE TYPICAL BYTE PROGRAMMING TIME 10µs (PRESTO F ALGORITHM) ELECTRICAL CHIP ERASE IN 1s RANGE
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M28F256
PLCC32
PDIP32
M28F256
1N914
PDIP32
PLCC32
memory write protect m28f512
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Untitled
Abstract: No abstract text available
Text: M29F400T M29F400B SINGLE SUPPLY 4 Megabit x8/x16, Block Erase FLASH MEMORY PRODUCT PREVIEW DUAL x8 and x16 ORGANISATION FAST ACCESS TIME: 70ns 5V±10% SUPPLY VOLTAGE for PROGRAM/ERASE and READ OPERATIONS TYPICAL PROGRAMMING TIME – 10µs by Byte/16µs by Word
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M29F400T
M29F400B
x8/x16,
Byte/16
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Untitled
Abstract: No abstract text available
Text: M29F200T M29F200B SINGLE SUPPLY 2 Megabit x8/x16, Block Erase FLASH MEMORY TARGET SPECIFICATION DUAL x8 and x16 ORGANISATION FAST ACCESS TIME: 70ns 5V±10% SUPPLY VOLTAGE for PROGRAM/ERASE and READ OPERATIONS TYPICAL PROGRAMMING TIME – 10µs by Byte / 16µs by Word
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M29F200T
M29F200B
x8/x16,
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Untitled
Abstract: No abstract text available
Text: M29F400T M29F400B SINGLE SUPPLY 4 Megabit x8/x16, Block Erase FLASH MEMORY PRODUCT PREVIEW DUAL x8 and x16 ORGANISATION FAST ACCESS TIME: 70ns 5V±10% SUPPLY VOLTAGE for PROGRAM/ERASE and READ OPERATIONS TYPICAL PROGRAMMING TIME – 10µs by Byte / 16µs by Word
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M29F400T
M29F400B
x8/x16,
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A17F
Abstract: microcontroller based automatic power factor control AD0-AD15 PSD813FH PSD813FN A14F A8-15 80C31 instruction set
Text: Programmable Peripheral PSD813FN/FH Field-Programmable Microcontroller Peripherals with Flash Memory and Embedded Micro⇔Cells TM Preliminary Introduction The PSD813FH and PSD813FN devices are field-programmable microcontroller MCU peripherals with Flash memory. These multi-chip modules (MCM) are the first two members
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PSD813FN/FH
PSD813FH
PSD813FN
PSD813FH/FN
A17F
microcontroller based automatic power factor control
AD0-AD15
A14F
A8-15
80C31 instruction set
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plcc32 pinout
Abstract: PLCC32 TSOP32 M29F040 X5555
Text: M29F040 SINGLE SUPPLY 4 Megabit 512K x 8, Sector Erase FLASH MEMORY PRELIMINARY DATA FAST ACCESS TIME: 70ns 5V ± 10% SUPPLY VOLTAGE for PROGRAM and ERASE OPERATIONS 5V ± 10% SUPPLY VOLTAGE in READ OPERATIONS BYTE PROGRAMMING TIME: 10µs typical ERASE TIME
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M29F040
PLCC32
TSOP32
plcc32 pinout
PLCC32
TSOP32
M29F040
X5555
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M29F040
Abstract: PLCC32 TSOP32
Text: M29F040 SINGLE SUPPLY 4 Megabit 512K x 8, Sector Erase FLASH MEMORY FAST ACCESS TIME: 70ns 5V ± 10% SUPPLY VOLTAGE for PROGRAM/ERASE and READ OPERATIONS BYTE PROGRAMMING TIME: 10µs typical ERASE TIME – Sector: 1.0 sec typical – Bulk: 2.5 sec typical
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M29F040
12MHz)
PLCC32
TSOP32
M29F040
PLCC32
TSOP32
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M29V040
Abstract: PLCC32 TSOP32 NOR Flash & 1996 & sector protect
Text: M29V040 LOW VOLTAGE SINGLE SUPPLY 4 Megabit 512K x 8, Sector Erase FLASH MEMORY PRODUCT PREVIEW FAST ACCESS TIME: 120ns 3.3V ± 0.3V SUPPLY VOLTAGE for PROGRAM and ERASE OPERATIONS 3.3V ± 0.3V SUPPLY VOLTAGE in READ OPERATIONS BYTE PROGRAMMING TIME: 15µs typical
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M29V040
120ns
M29V040
PLCC32
TSOP32
NOR Flash & 1996 & sector protect
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Untitled
Abstract: No abstract text available
Text: M29W040 VERY LOW VOLTAGE SINGLE SUPPLY 4 Megabit 512K x 8, Sector Erase FLASH MEMORY FAST ACCESS TIME: 100ns 2.7V to 3.6V SUPPLY VOLTAGE for PROGRAM/ERASE and READ OPERATIONS BYTE PROGRAMMING TIME: 12µs typical ERASE TIME – Sector: 1.5 sec typical – Bulk: 2.5 sec typical
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M29W040
100ns
12MHz)
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DIL32
Abstract: Thomson-CSF ceramic capacitor CDFP Cn32 M29F040 PDIP32 PLCC32 TSOP32 THOMSON-CSF SEMICONDUCTEURS SPECIFIQUES
Text: M29F040 CMOS 4 Megabit 512K x 8,8 sectors SINGLE SUPPLY FLASH MEMORY DESCRIPTION The M29F040 is a non-volatile memory that may be erased electrically at the sector level, and programmed Byte-by-Byte. The interface is directly compatible with most microprocessors.
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M29F040
M29F040
PDIP32
DIL32
Thomson-CSF ceramic capacitor
CDFP
Cn32
PDIP32
PLCC32
TSOP32
THOMSON-CSF SEMICONDUCTEURS SPECIFIQUES
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LCCC32
Abstract: No abstract text available
Text: M29F040 CMOS 4 Megabit 512K x 8,8 sectors SINGLE SUPPLY FLASH MEMORY DESCRIPTION The M29F040 is a non-volatile memory that may be erased electrically at the sector level, and programmed Byte-by-Byte. The interface is directly compatible with most microprocessors.
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M29F040
M29F040
PDIP32
DIL32
LCCC32
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vme bus specification
Abstract: X74-138 Xilinx XC73108 Ipad ipad 2 design a5 to 32 line decoder XC7000 PLD VME AD10 AD11
Text: VME Data Acquisition Interface and Control in a Xilinx XC7000† September, 1994 Application Note By PATRICK KANE Introduction VME A/D Board The VME bus is a widely used and versatile asynchronous bus interface. This application note presents a data acquisition board which interfaces to the VME bus. The
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XC7000
12-bit
XC73108-10PQ160
XC7000
ADG15
ADG14
ADG13
ADG12
ADG11
vme bus specification
X74-138
Xilinx XC73108
Ipad
ipad 2
design a5 to 32 line decoder
PLD VME
AD10
AD11
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Untitled
Abstract: No abstract text available
Text: M29F100T M29F100B SINGLE SUPPLY 1 Megabit x8/x16, Block Erase FLASH MEMORY TARGET SPECIFICATION DUAL x8 and x16 ORGANISATION FAST ACCESS TIME: 70ns 5V±10% SUPPLY VOLTAGE for PROGRAM/ERASE and READ OPERATIONS TYPICAL PROGRAMMING TIME – 10µs by Byte / 16µs by Word
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M29F100T
M29F100B
x8/x16,
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1N914
Abstract: M28F256 PDIP32 PLCC32 memory write protect m28f512
Text: M28F256 256K 32K x 8, Chip Erase FLASH MEMORY FAST ACCESS TIME: 90ns LOW POWER CONSUMPTION – Standby Current: 100µA Max 10,000 ERASE/PROGRAM CYCLES 12V PROGRAMMING VOLTAGE TYPICAL BYTE PROGRAMMING TIME 10µs (PRESTO F ALGORITHM) ELECTRICAL CHIP ERASE IN 1s RANGE
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M28F256
PLCC32
PDIP32
M28F256
1N914
PDIP32
PLCC32
memory write protect m28f512
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29V040
Abstract: No abstract text available
Text: S G S -1 H 0 M S 0 N 6 fflD ^©HlLll g'ìnE(S R!lfl(gi M29V040 LOW VOLTAGE SINGLE SUPPLY 4 Megabit (512K x 8, Sector Erase) FLASH MEMORY PRODUCT PREVIEW FAST ACCESS TIME: 120ns 3.3V ± 0.3V SUPPLY VOLTAGE for PROGRAM and ERASE OPERATIONS 3.3V ± 0.3V SUPPLY VOLTAGE in READ
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M29V040
120ns
TSOP32
TSOP32
29V040
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7130H
Abstract: tvh07
Text: S G S -T H O M S O N M29F040 [M Q É » i[L i{ O T ( M ( g § SINGLE SUPPLY 4 Megabit (512K x 8, Sector Erase FLASH MEMORY PRELIMINARY DATA • FAST ACCESS TIME: 70ns ■ 5V ± 10% SUPPLY VOLTAGE for PROGRAM and ERASE OPERATIONS ■ 5 V ± 10% SUPPLY VOLTAGE In READ
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M29F040
10fas
7130H
tvh07
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Untitled
Abstract: No abstract text available
Text: In tegrated D e vice T e ch n o lo g y , Inc. CMOS Triple Bus SyncFIFOT With Bus-Matching 256x36x2, 512x36x2, 1024x36x2 PRELIMINARY IDT723626 IDT723636 IDT723646 NOTE: The errata notice on the last page describes corrections that have already been added to this document.
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256x36x2,
512x36x2,
1024x36x2
IDT723626
IDT723636
IDT723646
IDT723626-256
IDT723636-512
IDT723646-1024
36-bit
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Untitled
Abstract: No abstract text available
Text: S G S -T H O M S O N B M llLlim W D ei_ M29F040 SINGLE SUPPLY 4 Megabit 512Kx 8, Sector Erase FLASH MEMORY • FAST ACCESS TIME: 70ns ■ 5 V ± 10% SUPPLY VOLTAGE for PROGRAM/ERASE and READ OPERATIONS ■ BYTE PROGRAMMING TIME: 10^s typical ■ ERASE TIME
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M29F040
512Kx
12MHz)
TSOP32
TSOP32
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Untitled
Abstract: No abstract text available
Text: Programmable Peripheral PSD813FH/FH Preliminary Introduction Field-Programmable Microcontroller Peripherals _with Flash Memory and Embedded M icro s Cells The PSD813FH and PSD813FN devices are field-programmable microcontroller MCU peripherals with Flash memory. These multi-chip modules (MCM) are the first two members
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PSD813FH/FH
PSD813FH
PSD813FN
PSD813FH/FN
82-2-76M
800-TEAM-WSI
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ad149
Abstract: weitek 3164
Text: 3164/3364 64-BIT FLOATING-POINT DATA PATH UNITS November 1989 1. Features 64-BIT FLOATING-POINT DATA PATH FULL FUNCTION 64-bit and 32-bit floating-point and 32-bit integer multiplier Divide and square root operations Single-cycle pipeline throughput for the following
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64-BIT
32-bit
ad149
weitek 3164
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DG7-132
Abstract: 2BT-5 ci237 ha
Text: M29F400T M29F400B RiflD ®[i[Ui©iiMRflD©i SINGLE SUPPLY 4 Megabit x8/x16, Block Erase FLASH MEMORY SGS-THOMSON PRODUCT PREVIEW • DUAL x8 and x16 ORGANISATION ■ FAST ACCESS TIME: 70ns 5V±10% SUPPLY VOLTAGE for PROGRAM/ERASE and READ OPERATIONS TYPICAL PROGRAMMING TIME
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M29F400T
M29F400B
x8/x16,
Byte/16ns
M29F400T,
M29F400B
007132b
DG7-132
2BT-5
ci237 ha
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Untitled
Abstract: No abstract text available
Text: /S T *7 # S G S -T H O M S O N ^Q g®(Q [I[L[i TO®KilO(gi M 29F040 SINGLE SUPPLY 4 Megabit (512Kx 8, Sector Erase) FLASH MEMORY • FAST ACCESS TIME: 70ns ■ 5V ± 10% SUPPLY VOLTAGE for PROGRAM and ERASE OPERATIONS ■ 5 V ± 10% SUPPLY VOLTAGE in READ
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29F040
512Kx
TSOP32
DQ71212
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tsop32 8x20
Abstract: IA10 M29F040 PLCC32 TSOP32 DQ712
Text: SGS-THOMSON Vf li^D [^ Q [IL[l©ir[^©Ki]D(gS M29F040 SINGLE SUPPLY 4 Megabit (512Kx 8, Sector Erase) FLASH MEMORY • FAST ACCESS TIME: 70ns ■ 5V ± 10% SUPPLY VOLTAGE for PROGRAM and ERASE OPERATIONS ■ 5V ± 10% SUPPLY VOLTAGE in READ OPERATIONS ■ BYTE PROGRAMMING TIME: 10^s typical
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M29F040
512Kx
TSOP32
TSOP32
DQ71212
tsop32 8x20
IA10
M29F040
PLCC32
DQ712
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Untitled
Abstract: No abstract text available
Text: SGS-THOMSON M29F040 SINGLE SUPPLY 4 Megabit 512K x 8, Sector Erase FLASH MEMORY FAST ACCESS TIME: 70ns 5 V ± 10% SUPPLY VOLTAGE for PROGRAM/ERASE and READ OPERATIONS BYTE PROGRAMMING TIME: 1ty s typical ERASE TIME - Sector: 1.0 sec typical - Bulk: 2.5 sec typical
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M29F040
25fiA
12MHz)
PLCC32S-THOM
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