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    Amphenol Communications Solutions SIP050-1X28-160B

    1X28-160B-SIP SOCKET 28 CTS
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    Amphenol Communications Solutions SIP050-1X28-160BLF

    CONN SOCKET SIP 28POS GOLD
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    ITT Interconnect Solutions CA06X28-16P-B-D17-A240

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    Mouser Electronics CA06X28-16P-B-D17-A240
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    Master Electronics CA06X28-16P-B-D17-A240
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    Xicor Inc X2816BP

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    Bristol Electronics X2816BP 15
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    Xicor Inc X2816AP-35

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    Bristol Electronics X2816AP-35 99
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    X2816 Datasheets (153)

    Part ECAD Model Manufacturer Description Curated Type PDF
    X2816A Xicor 2K x 8 nMOS EEPROM Memory Scan PDF
    X2816A-25 Xicor 2K x 8 nMOS EEPROM Memory Scan PDF
    X2816A-35 Xicor 2K x 8 nMOS EEPROM Memory Scan PDF
    X2816A-45 Xicor 2K x 8 nMOS EEPROM Memory Scan PDF
    X2816AD-25 Xicor 16K 2048 x 8 Bit, 5 Volt, Byte Alterable E2PROM Original PDF
    X2816AD-35 Xicor 16K 2048 x 8 Bit, 5 Volt, Byte Alterable E2PROM Original PDF
    X2816AD-45 Xicor 16K 2048 x 8 Bit, 5 Volt, Byte Alterable E2PROM Original PDF
    X2816ADI-25 Xicor 16K 2048 x 8 Bit, 5 Volt, Byte Alterable E2PROM Original PDF
    X2816ADI-35 Xicor 16K 2048 x 8 Bit, 5 Volt, Byte Alterable E2PROM Original PDF
    X2816ADI-45 Xicor 16K 2048 x 8 Bit, 5 Volt, Byte Alterable E2PROM Original PDF
    X2816ADM-35 Xicor 16K 2048 x 8 Bit, 5 Volt, Byte Alterable E2PROM Original PDF
    X2816ADM-45 Xicor 16K 2048 x 8 Bit, 5 Volt, Byte Alterable E2PROM Original PDF
    X2816ADMB-25 Xicor 16K 2048 x 8 Bit, 5 Volt, Byte Alterable E2PROM Original PDF
    X2816ADMB-35 Xicor 16K 2048 x 8 Bit, 5 Volt, Byte Alterable E2PROM Original PDF
    X2816ADMB-45 Xicor 16K 2048 x 8 Bit, 5 Volt, Byte Alterable E2PROM Original PDF
    X2816AE-25 Xicor 16K 2048 x 8 Bit, 5 Volt, Byte Alterable E2PROM Original PDF
    X2816AE-35 Xicor 16K 2048 x 8 Bit, 5 Volt, Byte Alterable E2PROM Original PDF
    X2816AE-45 Xicor 16K 2048 x 8 Bit, 5 Volt, Byte Alterable E2PROM Original PDF
    X2816AEI-25 Xicor 16K 2048 x 8 Bit, 5 Volt, Byte Alterable E2PROM Original PDF
    X2816AEI-35 Xicor 16K 2048 x 8 Bit, 5 Volt, Byte Alterable E2PROM Original PDF
    ...

    X2816 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    c 3852

    Abstract: DIN 3852-1 X2816C X2816CI
    Text: X2816C X2816C 16K 2048 x 8 Bit 5 Volt, Byte Alterable E2PROM FEATURES DESCRIPTION • • The Xicor X2816C is a 2K x 8 E2PROM, fabricated with an advanced, high performance N-channel floating gate MOS technology. Like all Xicor Programmable nonvolatile memories it is a 5V only device. The X2816C


    Original     		PDF X2816C X2816C 120ns 150ns 200ns 24-Lead c 3852 DIN 3852-1 X2816CI

    x2816c-20

    Abstract: DIN 3852 C3852 X2816C X2816CI x2816
    Text: X2816C X2816C 16K 2048 x 8 Bit 5 Volt, Byte Alterable E2PROM FEATURES DESCRIPTION • • The Xicor X2816C is a 2K x 8 E2PROM, fabricated with an advanced, high performance N-channel floating gate MOS technology. Like all Xicor Programmable nonvolatile memories it is a 5V only device. The X2816C


    Original     		PDF X2816C X2816C --16Inc. x2816c-20 DIN 3852 C3852 X2816CI x2816

    xicor X2816A

    Abstract: X2816AM X2816A X2816AM-35 X2816AM-45 x2816
    Text: t 16K Military X2816AM a r ç 2048x8 Bit _ Electrically Erasable PROM_ FEATURES • Simple Byte Write Operation —No High Voltages Necessary —Single TTL Level WE Signal Modifies Data


    OCR Scan     		PDF X2816AM 2048x8 X2816A X2816AM xicor X2816A X2816AM-35 X2816AM-45 x2816

    DIN 3852

    Abstract: DIN 3852-1 x2816 X2816C X2816CI X28C16 C3052
    Text: IO G X2816C 16K H I! 2 0 4 8 x 8 Bit _ 5 Volt, Byte Alterable E2PROM FEATURES DESCRIPTION • 90 ns Access Time • SIMPLE Byte and Page Write — Single 5 Volt Supply — No External High Voltages or V p p Control Circuits — Self Timed — No Erase Before Write


    OCR Scan     		PDF X2816C 16-Byte X2816C DIN 3852 DIN 3852-1 x2816 X2816CI X28C16 C3052

    x2816

    Abstract: X2816B
    Text: XICOR 9941743 X IC O R INCT5 De I ^ 4 1 7 4 3 DGD14TD 95D 014 90 IN C G |~ D T-M-/3-27 PRELIMINARY INFORMATION 16K Military 2048 x 8 Bit X2816BM Electrically Erasable PROM FEATURES • 250 ns Access Time • High Performance Advanced NMOS Technology • Fast Write Cycle Times


    OCR Scan     		PDF DGD14TD T-M-/3-27 X2816BM 16-Byte X2816BM x2816 X2816B

    X2816B

    Abstract: No abstract text available
    Text: X ra PRELIMINARY in f o r m a t io n 16K Military X2816BM 2048 x 8B Electrically Erasable PROM features DESCRIPTION • 250 ns Access Tim« • High Performance Advanced NMOS Technology « Fast Write Cycle Times - 16-Byte Page Write Operation —Byte or Page Write Cycle: 5 ma Typical


    OCR Scan     		PDF X2816BM X2616 X2816B X2616B 16-byte

    DIN 3852-1

    Abstract: C3852 X2816C X2816CI x2816 3852P
    Text: XICOR INC SEE D • *^41743 □□□3522 hT3 ■ XIC [¿ E B P X2816C 2048 x 8 Bit 5 Volt, Byte Alterable E2PROM 7 ^ -/3 -^ 16K FEATURES DESCRIPTION • 90 ns Access Time • SIMPLE Byte and Page Write —Single 5 Volt Supply — No External High Voltages or V p p Control


    OCR Scan     		PDF 0aa35Â X2816C 16-Byte X2816C DIN 3852-1 C3852 X2816CI x2816 3852P

    Untitled

    Abstract: No abstract text available
    Text: J Ü E X2816C 16K D Ü 2048 x 8 Bit 5 Volt, Byte Alterable E2PROM FEATURES DESCRIPTION * 90ns Access Time * Simple Byte and Page Write — Single 5V Supply — No External High Voltages or Vpp Control Circuits — Self-Timed — No Erase Before Write — No Complex Programming Algorithms


    OCR Scan     		PDF X2816C 640ms 300ns X2816C 120ns 150ns 200ns 24-Lead

    2816b

    Abstract: No abstract text available
    Text: 1QEB! PRELIMINARY INFORMATION Commercial Industrial 16K X2816B X2816BI 2048 x 8 Bit Electrically Erasable PROM FEATURES • 250 ns Access Time • High Performance Advanced NMOS Technology • Fast Write Cycle Times — 16-Byte Page Write Operation — Byte or Page Write Cycle: 5 ms Typical


    OCR Scan     		PDF X2816B X2816BI 16-byte X2816B, X2816BI 2816b

    Untitled

    Abstract: No abstract text available
    Text: «Bf X2816C 16K 2048 x 8 Bit 5 Volt, Byte Alterable E2PROM FEATURES DESCRIPTION • 90ns Access Tim e • Simple Byte and Page Write — Single 5V Supply — No External High Voltages or Vpp Control Circuits — Self-Timed — No Erase Before Write — No Complex Programming Algorithms


    OCR Scan     		PDF X2816C 640ms 300jas 120ns 150ns 200ns 24-Lead 32-Lead

    xicor X2816A

    Abstract: xicor 2816 X2816A x2816 X2816AM X2816AM-35 X2816AM-45
    Text: im Military 16K 2048 x 8 Bit X2816AM Electrically Erasable PROM FEATURES • Simple Byte Write Operation —No High Voltages Necessary —Single TTL Level WE Signal Modifies Data —Internally Latched Address and Data —Self Timed Write_ —Noise Protected WE Pin


    OCR Scan     		PDF X2816AM X2816A X2816AM xicor X2816A xicor 2816 x2816 X2816AM-35 X2816AM-45

    XXHX

    Abstract: x2816 X2816C military
    Text: im X2816C 16K 2048 X 8 Bit 5 Volt, Byte Alterable E2PROM FEATURES DESCRIPTION • 90 ns Access Time • SIMPLE Byte and Page Write — Single 5 Volt Supply — No External High Voltages or V p p Control Circuits — Self Timed — No Erase Before Write — No Complex Programming Algorithms


    OCR Scan     		PDF X2816C XXHX x2816 X2816C military

    xicor X2816A

    Abstract: X2816A xicor 2816 X2816AM X2816AM-35 X2816AM-45 x2816
    Text: im Military 16K 2048 x 8 Bit X2816AM Electrically Erasable PROM FEATURES • Simple Byte Write Operation —No High Voltages Necessary —Single TTL Level WE Signal Modifies Data —Internally Latched Address and Data —Self Timed Write_ —Noise Protected WE Pin


    OCR Scan     		PDF X2816AM X2816A X2816AM xicor X2816A xicor 2816 X2816AM-35 X2816AM-45 x2816

    X2816A-35

    Abstract: xicor X2816A X2816A X2816A-25 X2816A-45 x2816
    Text: l& B t Commercial X2816A , n« v # n il Industrial_ X2816AI_ 20 48x8 Bit 16K Electrically Erasable PROM FEATURES • Simple Byte Write Operation — No High Voltages Necessary —Single TTL Level WE Signal Modifies Data — Internally Latched Address and Data


    OCR Scan     		PDF X2816A X2816AI_ X2816A X2816A, X2816AI X2816A-35 xicor X2816A X2816A-25 X2816A-45 x2816

    X2816B

    Abstract: X2816 X2816B-25
    Text: XI CO R INC .-H 16K 31E D Commercial Industrial Bi ^41743 QQQ2Ô2Ô 5 KiCBP X2816B X2816BI on. a v a R it 2048X 8 Bit T-VS-/3-Z1 Electrically Erasable PROM FEATURES • 250 ns Access Time • High Performance Advanced NMOS Technology • Fast Write Cycle Times


    OCR Scan     		PDF 2048X X2816B X2816BI X2816B, X2816BI X2816 X2816B-25

    X2816BMB

    Abstract: X2816BM X2816B
    Text: Xiar. D ATA S H EET S U P PLEM EN T 16K Mil-Std-883C X2816BMB 2 04 8 x8 Bit Electrically Erasable PROM With the exception of V q e . all device A.C. and D.C. pa­ rameters are the same as those for normal operation. A.C. AND D.C. REQUIREMENTS FOR CHIP ERASE


    OCR Scan     		PDF X2816BMB MilStd-883C Mil-Std-883C X2816BM X2816B

    x2816am

    Abstract: No abstract text available
    Text: f e 16K Military X2816AM l F 2048 x 8 Bit Electrically Erasable PROM FEATURES • Simple Byte Write Operation —No High Voltages Necessary —Single TTL Level WE Signal Modifies Data — Internally Latched Address and Data —Self Timed Write — Noise Protected WE Pin


    OCR Scan     		PDF X2816AM X2816A X2816AM

    Untitled

    Abstract: No abstract text available
    Text: X2816C U H X2816C 16K 2 0 4 8 x 8 Bit 5 Volt, Byte Alterable E2PROM FEATURES DESCRIPTION * 90ns Access Time * Simple Byte and Page W rite — Single 5V S upply — No External High Voltages o r V p p Control C ircuits — Self-Timed — No Erase Before W rite


    OCR Scan     		PDF X2816C X2816C 640ms

    X2816B

    Abstract: X2816BM X2816BMB WE VQE 11 E X2816BM-25
    Text: JÜHK PR ELIM IN A R Y IN FO R M A TIO N 16K Military X2816BM 2 0 4 8 x 8 Bit Electrically Erasable PROM FEATURES • 250 ns Access Time • High Performance Advanced NMOS Technology • Fast Write Cycle Times — 16-Byte Page Write Operation — Byte or Page Write Cycle: 5 ms Typical


    OCR Scan     		PDF X2816BM 16-Byte X2816B Mil-Std-883C X2816BMB WE VQE 11 E X2816BM-25

    Untitled

    Abstract: No abstract text available
    Text: m i X2816C 16K 2048 x 8 Bit 5 Volt, Byte Alterable E2PROM FEATURES DESCRIPTION • 90ns Access Time • Simple Byte and Page Write — Single 5V Supply — No External High Voltages or Vpp Control Circuits — Self-Timed — No Erase Before Write — No Complex Programming Algorithms


    OCR Scan     		PDF X2816C 640ms 300us G0D457Ã 120ns 150ns 200ns

    x2816

    Abstract: x2816c-90 x2816c-20
    Text: 16K tear X2816C 2048 x 8 Bit 5 Volt, Byte Alterable E2PROM FEATURES DESCRIPTION • 90ns Access Time • Simple Byte and Page Write — Single 5V Supply — No External High Voltages or V p p Control Circuits — Self-Timed — No Erase Before Write — No Complex Programming Algorithms


    OCR Scan     		PDF X2816C 640ms X2816C 150ns 200ns 24-Lead 32-Lead x2816 x2816c-90 x2816c-20

    Untitled

    Abstract: No abstract text available
    Text: Usar PRELIMINARY INFORMATION 16K Military X2816BM 2048 x 8 Bit Electrically Erasable PROM FEATURES • 250 ns Access Time • High Performance Advanced NMOS Technology • Fast Write Cycle Times — 16-Byte Page Write Operation — Byte or Page Write Cycle: 5 ms Typical


    OCR Scan     		PDF X2816BM 16-Byte X2816B ilStd-883C

    x2864

    Abstract: X28C64C XICOR 28C256 x2816
    Text: 4CLr 16K Commercial X28160 ociar v a Rît Industrial_ X2816CI_2048 x 8 Bit Electrically Erasable PROM FEATURES • 200 ns Access Tim e • High P erform ance Advanced NMOS Technology • Fast W rite Cycle Tim es — 16-Byte Page W rite Operation


    OCR Scan     		PDF X28160 X2816CI_ 16-Byte x2864 X28C64C XICOR 28C256 x2816

    Untitled

    Abstract: No abstract text available
    Text: t 16K o Commercial X2816C X2816CI_ 2048 x 8 Bit Electrically Erasable PROM FEATURES • 200 ns Access Time • High Performance Advanced NMOS Technology • Fast Write Cycle Times — 16-Byte Page Write Operation — Byte or Page Write Cycle: 5 ms Typical


    OCR Scan     		PDF X2816C X2816CI_ 16-Byte X2816C, X2816CI