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    X10V Search Results

    X10V Result Highlights (2)

    Part ECAD Model Manufacturer Description Download Buy
    DF3039VX10V Renesas Electronics Corporation 16-bit Microcontrollers with Embedded 512KB Flash Microcomputer (Non Promotion) Visit Renesas Electronics Corporation
    D73032VX10V Renesas Electronics Corporation 16-bit Microcontrollers with Embedded 512KB Flash Microcomputer (Non Promotion) Visit Renesas Electronics Corporation
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    X10V Price and Stock

    Rochester Electronics LLC DF3048VX10V

    IC MCU 16BIT 128KB FLASH
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey DF3048VX10V Bulk 87 6
    • 1 -
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    Panduit Corp UTP28X10VL

    CAT 6A 28AWG UTP PATCH CORD, CM/
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    DigiKey UTP28X10VL Bulk 66 1
    • 1 $28.64
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    • 10000 $22.35204
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    Avnet Americas UTP28X10VL Bulk 8 Weeks 10
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    Newark UTP28X10VL Bulk 10
    • 1 $33.18
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    Master Electronics UTP28X10VL
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    Sager UTP28X10VL 1
    • 1 $35.59
    • 10 $33.95
    • 100 $27.24
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    Panduit Corp UTP6AX10VL

    CABLE MOD 8P8C PLUG TO PLUG 10'
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    DigiKey UTP6AX10VL Bulk 36 1
    • 1 $29.32
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    Avnet Americas UTP6AX10VL Bulk 8 Weeks 10
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    Sager UTP6AX10VL 1
    • 1 $36.3
    • 10 $34.63
    • 100 $27.79
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    Panduit Corp STP6X10VL

    COPPER PATCH CORD, CAT 6A, VIOLE
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    DigiKey STP6X10VL Bulk 16 1
    • 1 $36.1
    • 10 $33.569
    • 100 $31.2094
    • 1000 $29.00682
    • 10000 $28.17129
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    Avnet Americas STP6X10VL Bulk 8 Weeks 10
    • 1 $30.22
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    Newark STP6X10VL Bulk 10
    • 1 $40.62
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    • 100 $33.44
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    Sager STP6X10VL 1
    • 1 $41.56
    • 10 $37.52
    • 100 $33.35
    • 1000 $32.94
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    Schneider Electric TCSXCNEFNX10V

    CBL 4POS PLUG RA TO WIRE 32.8'
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey TCSXCNEFNX10V Box 3 1
    • 1 $97.04
    • 10 $91.336
    • 100 $90
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    X10V Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    p6r8m

    Abstract: 13006-2 FZ 63 capacitor 1000 6.3V 20SEP33M 10SVPD56M 16SVP100M 25SEP6R8M 6SVP100M 7190K
    Text: 2010-07 2 主な使用事例 回路使用上の注意 1.大電流サージ抑制方法の説明 3 2.大電流サージの抑制方法の例 4 3.急速放電の電流抑制 5 4.OS-CONとアルミ電解コンデンサ並列接続時の注意


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    PDF OS-CONESR10A OS-CON1010A10 DC20V p6r8m 13006-2 FZ 63 capacitor 1000 6.3V 20SEP33M 10SVPD56M 16SVP100M 25SEP6R8M 6SVP100M 7190K

    M25053

    Abstract: 30 kw induction heater motor protection relay k2cm LG2-AB OTG-L21 complete 5v circuit diagram induction heater sdv-dh6 pf08 3a OMRON tacho-generator SDN SD fuse F10A
    Text: Measuring & Motor Protective Relays Group Catalog Measuring & Motor Protective Relays Group Catalog OMRON Corporation Industrial Automation Company Industrial Devices and Components Division H.Q Industrial ControI Components Department Shiokoji Horikawa, Shimogyo-ku,


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    PDF X070-E1-01 0803-1M SE-164 46-8-632-3500/Fax: CH-6312 41-41-748-1313/Fax: TR-81020 90-216-326-2980/Fax: 44-20-8450-4646/Fax: M25053 30 kw induction heater motor protection relay k2cm LG2-AB OTG-L21 complete 5v circuit diagram induction heater sdv-dh6 pf08 3a OMRON tacho-generator SDN SD fuse F10A

    DETECTION FUITE

    Abstract: DETECTEUR X2F1-G
    Text: IE2FQ DETECTEUR DE PROXIMITE INDUCTIF Détecteur résistant aux projections de soudure Boîtier et écrous de fixation en Teflon, résistant aux projections de soudure et aux produits chimiques. Boîtier étanche à l’eau, conforme à la norme IEC IP67.


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    FMXG26

    Abstract: sanken power transistor FGM623S FMX-G26S fmxg sanken
    Text: SANKEN ELECTRIC FGM623S Features ・Low Saturation Voltage VCE sat =1.5V typ. (IC=30A) ・High Speed SW tf=120ns typ. (IC=30A) http://www.sanken-ele.co.jp Jul. 2010 Package TO-3PF Applications ・Current Resonance Inverter Switching Equivalent circuit C(2)


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    PDF FGM623S 120ns FMXG26 sanken power transistor FGM623S FMX-G26S fmxg sanken

    t04 88

    Abstract: CF35 IGBT 100V 100A MGD623 T04003 mgd623s T04-003EA-090721
    Text: IGBT MGD623S July, 2009 •Features ■Package-TO-3P • Low Saturation Voltage VCE sat =1.8V typ. • High Speed tf=120ns typ. • Low VF FRD Included VF=1.2V typ. ■Applications • Current Resonance Inverter Switching • Induction Heating Cooking ■Equivalent circuit


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    PDF MGD623S 120ns T04-003EA-090721 t04 88 CF35 IGBT 100V 100A MGD623 T04003 mgd623s T04-003EA-090721

    mgd623n

    Abstract: t04 88 T04 diode CF35 15VRG t04 75 B-205
    Text: IGBT MGD623N July, 2009 •Features ■Package-TO-3P • Low Saturation Voltage VCE sat =1.7V typ. • High Speed tf=200ns typ. • Low VF FRD Included VF=1.2V typ. ■Applications • Current Resonance Inverter Switching • Induction Heating Cooking ■Equivalent circuit


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    PDF MGD623N 200ns T04-002EA-090721 mgd623n t04 88 T04 diode CF35 15VRG t04 75 B-205

    Untitled

    Abstract: No abstract text available
    Text: 600 V, 18 A, IGBT FGM633 Features Package  Low Saturation Voltage  High Speed Switching  RoHS Compliant TO-3PF-3L  VCE - 600 V  IC-18 A TC = 100 °C


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    PDF FGM633 FGM633-DS

    S87A

    Abstract: sdv-dh6 100-110VDC SDV-FH2T sdv-fh1 SDV-DH2
    Text: Voltage Sensor SDV CSM_SDV_DS_E_3_1 Overvoltage/Undervoltage Monitoring Relay for AC and DC Input • Detect overvoltages or undervoltages switch selectable from 4 mV to 300 V. • Detect undercurrent, reverse current, or overcurrent in DC circuits using shunt (SDV-FL).


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    PDF

    SANKEN BRIDGE DIODE 50A

    Abstract: sanken diode
    Text: http://www.sanken-ele.co.jp SANKEN ELECTRIC SLA5227 Features ・Built-in IGBT and diode bridge of partial switching PFC circuit Enable to reduce mounting area ・Low saturation voltage IGBT VCE sat = 1.7V max ・Low saturation voltage diode bridge VF = 1.1V max


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    sdv-dh6

    Abstract: S87A SH100 50 sdv-fh2 SDV-DH2 OMRON STEP RELAY 8 pin dc omron relay terminals for engine signal dc ac inverter reference design 8PFA OMRON DIP switch
    Text: Voltage Sensor SDV Overvoltage/Undervoltage Monitoring Relay for AC and DC Input • Detect overvoltages or undervoltages switch selectable from 4 mV to 300 V. • Detect undercurrent, reverse current, or overcurrent in DC circuits using shunt (SDV-FL).


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    75545P

    Abstract: 75545S
    Text: in terrii HUF75545P3, HUF75545S3S D ata S h e e t J u n e 1999 F ile N u m b e r 4 7 3 8 .1 75A, 80V, 0.010 Ohm, N-Channel, UltraFET Power MOSFET Packaging Features JEDEC TO-220AB JEDEC TO-263AB • Ultra Low On-Resistance • rDS ON = 0.01 O il, V q s = 10V


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    PDF HUF75545P3, HUF75545S3S O-220AB O-263AB 75545P HUF75545P3 HUF75545S3S O-220AB O-263AB 75545S

    EATON CM20A

    Abstract: A5 GNE mosfet Hall sensor 44e 402 2N8491 FTG 1087 S TRIAC BCR 10km FEB3T smd transistor marking 352a sharp EIA 577 sharp color tv schematic diagram MP-130 M mh-ce 10268
    Text: Table of Contents N E W A R K E L E C T R O N IC S “Where serving you begins even before you call” Newark Electronics is a UNIQUE broadline distributor of electronic components, dedicated to provid­ ing complete service, fast delivery and in-depth inventory. Our main


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    GT40

    Abstract: No abstract text available
    Text: GT40M301 TOSHIBA TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL MOS TYPE fiTJil M 301 Unit in mm HIGH POWER SWITCHING APPLICATIONS • • • The 3rd Generation FRD Included Between Emitter and Collector Enhancement-Mode • H ig h s p e e d IG B T : t f = 0 .25^8 TYP.


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    PDF GT40M301 GT40

    VQE 24

    Abstract: GT40M101
    Text: GT40M101 TO SH IBA TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N-CHANNEL IGBT G T 4 0 M 1 01 HIGH POWER SWITCHING APPLICATIONS. • • • • High Input Impedance High Speed : tf^ O .^ s Max. Low Saturation Voltage : V C E (sa t)~ 3 .4 V (Max.) Enhancement-Mode


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    PDF GT40M101 GT40M1 2-16F VQE 24 GT40M101

    Untitled

    Abstract: No abstract text available
    Text: H I-5 6 9 0 V /9 5 V /9 7 V H a r r is High Speed, 12-Bit Low Cost Monolithic Digital-to-Analog Converter Features Applications • V o lta g e O u tp u t w ith Fast S e t tlin g . 750n s H ig h S le w R a te .5 0 V // lis


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    PDF 12-Bit

    Untitled

    Abstract: No abstract text available
    Text: h a r r i s H S -508A R H /883S Radiation Hardened 8 Channel CMOS Analog Multiplexer With Overvoltage Protection J u ly 1 9 9 0 Pinouts Features SID EBRAZE TOP VIEW • This Circuit is Processed in Accordance to M IL-STD -883 and is Fully Conformant Under the Provisions of Paragraph 1.2.1.


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    PDF -508A /883S

    ztx658

    Abstract: No abstract text available
    Text: NPN SILICON PLANAR MEDIUM POWER HIGH VOLTAGE TRANSISTOR ZTX658 ISSU E 1 - APRIL 94_ FEATURES * 400 Volt V CE0 * 0.5 A m p continuous current * Ptot=1W att A P P L IC A T IO N S * Telephone dialler circuits E-Lina T 092 Compatible


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    PDF ZTX658 atTamp25 ZTX688B lf-50mA, 50MHz ztx658

    Vectron Laboratories

    Abstract: CO-711 BV63T ocxo 705sb C0718 CO-718S CO718S
    Text: VECTRON LABORATORIES 3=iE INC » • CI 4 4 7 3 2 Q OGGObSG 2 «VEL Low Profile PC Board Mount OCXOs 5 - 4 5 - 0 2 » T - S O - O S ' FREQUENCY CO-711 SER IE S C0-718S S E R IE S AT Cut Crystal (S C /IT Cut Crystal) 5 MHz and 10 MHz standard. Other frequencies available in 4-34 MHz range with sine output


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    PDF I44732Q CO-711 CO-71 CO-71 x10rI Vectron Laboratories BV63T ocxo 705sb C0718 CO-718S CO718S

    GT60M101

    Abstract: X10V
    Text: INSULATED GATE BIPOLAR TRANSISTOR SILICON N-CHANNEL MOS TYPE GT60M101 HIGH POWER SWITCHING APPLICATIONS. Unit in mm 20.5MAX . 0 3 .3 ± 0 .2 . High Input Impedance . High Speed : tf = 0. l\is Max. . Low Saturation Voltage : VCE(sat) • OV(Max.) . Enhancement-Mode


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    PDF GT60M101 GT60M101 X10V

    irc 455 bd

    Abstract: No abstract text available
    Text: ANALOG DEVICES □ Real-Time Analog Computational Unit ACU A0S38 FEATURES AD538 FU N C TIO N A L BLOCK DIAGRAM (VzY" Transfer Function Wide Dynamic Range (Denominator) -1000:1 Simultaneous Multiplication and Division Resistor-Programmable Powers & Roots


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    PDF A0S38 AD538 AD547 irc 455 bd

    AN5355

    Abstract: AN5356 AN535
    Text: AN5355, AN5356 AN5355, AN5356 > ^ 7 1 — X HI! & / Analog Interface C ircuit for T eletex t S ystem s • m m U n it : mm AN5355, AN5356Ü, ? 7 x - x ■ * r ' 3 - r b il 4 > 1<C b L X aa:Wt5 ftfc¥ # fa ifc fA |n |jf& -c l-o 2<n a • BW # 2 8 MHz • i ë S i â X 'i


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    PDF AN5355, AN5356 AN5356Ã 28MHz) AN5355 AN5356 AN535

    GT60M104

    Abstract: S5J12 GT60M
    Text: GT60M104 TO SH IBA TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N-CHANNEL IGBT G T 6 0 M 1 04 Unit in mm HIGH POWER SWITCHING APPLICATIONS High Input Impedance High Speed : tf=0.4^s Max. Low Saturation Voltage : V^ e (sat) = 3.7V (Max.) Enhancement-Mode


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    PDF GT60M104 GT60M1 S5J12 2-21F2C GT60M104 GT60M

    35kA

    Abstract: hi-524-2
    Text: HI-524 HARRIS S E M I C O N D U C T O R 4-Channel Wideband and Video Multiplexer A u g u st 1997 Features Description • • • • T h e H I-52 4 is a 4 -C h a n n e l C M O S analog m u ltip le xe r d e sig n e d Crosstalk 10M H z . <-60dB


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    PDF HI-524 HI-524 2250nm 3720nm 485nm 35kA hi-524-2

    1S1948

    Abstract: 1S2063 V03J
    Text: 4496205 H I T A C H I / OPTOELECTRONICS V03 • —iSSaiEffl U3 > 5' -f % 6 8C 0 9 7 9 4 o T - ö l - 1 3 — K (General-Use Rectifier Diode) bñ VRRM : 2 0 0 V -8 0 0 V DE I ^ M T L S D S OOOTTTM 0 O ' f (AV) : 1 -3A 62M IN -(2 .4 4 )5 .0M A X "2 9 M IN -+ ^ o .2 H ^ 2 9 M I N - <1-1 4 >


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    PDF V03G1600V) 50//F 22/jsec 1S1948 1S2063 V03J