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    X-BAND MICROWAVE FET Search Results

    X-BAND MICROWAVE FET Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    RX1214B300YI Rochester Electronics LLC RX1214B300Y - Microwave Power Transistor (Ampleon Die) Visit Rochester Electronics LLC Buy
    CLC425AJE Rochester Electronics LLC OP-AMP, 800uV OFFSET-MAX, 1900MHz BAND WIDTH, PDSO8, PLASTIC, SOIC-8 Visit Rochester Electronics LLC Buy
    MAX4352EUK-T Rochester Electronics LLC OP-AMP, 12000uV OFFSET-MAX, 30MHz BAND WIDTH, PDSO5, MO-178AA, SOT-23, 5 PIN Visit Rochester Electronics LLC Buy
    CA3046 Rochester Electronics LLC RF Small Signal Bipolar Transistor, 0.05A I(C), 5-Element, Very High Frequency Band, Silicon, NPN, MS-001AA, MS-001AA, 14 PIN Visit Rochester Electronics LLC Buy
    ISL55016IRTZ-T7 Renesas Electronics Corporation MMIC Silicon Bipolar Differential Amplifier Visit Renesas Electronics Corporation

    X-BAND MICROWAVE FET Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    30349

    Abstract: 136423
    Text: PRELIMINARY DATA SHEET N-CHANNEL GaAs MES FET NE960R275, NE960R575 0.2/0.5 W X, Ku-BAND POWER GaAs MESFET DESCRIPTION The NE960R275 and NE960R575 are 0.2/0.5 W GaAs MESFETs designed for middle power transmitter applications for X, Ku-band microwave communication systems. It is capable of delivering 0.2/0.5 watt of output


    Original     		NE960R275, NE960R575 NE960R275 NE960R575 NE960R275) NE960R575) 30349 136423 PDF

    TIM1414-4A

    Abstract: No abstract text available
    Text: TOSHIBA TIM1414-4A MICROWAVE POWER GaAs FET Internally Matched Power GaAs FETs X, Ku-Band Features • High power - P1dB = 36.5 dBm at 14.0 GHz to 14.5 GHz • High gain - G1dB = 6.5 dB at 14.0 GHz to 14.5 GHz • Broad Band Internally Matched • Hermetically sealed package


    Original     		TIM1414-4A ITIM1414-4A MW50290196 TIM1414-4A PDF

    TIM1414-5

    Abstract: No abstract text available
    Text: TOSHIBA TIM1414-5 MICROWAVE POWER GaAs FET Internally Matched Power GaAs FETs X, Ku-Band Features • High power - P1dB =37.5 dBm at 14.0 GHz to14.5 GHz • High gain - G1dB =6.0 dB at 14.0 GHz to 14.5 GHz • Broad Band Internally Matched • Hermetically sealed package


    Original     		TIM1414-5 MW50300196 Tim1414-5 PDF

    TIM1414-8

    Abstract: No abstract text available
    Text: TOSHIBA TIM1414-8 MICROWAVE POWER GaAs FET Internally Matched Power GaAs FETs X, Ku-Band Features • High power - P1dB =39.5 dBm at 14.0 GHz to14.5 GHz • High gain - G1dB = 5.0 dB at 14.0 GHz to 14.5 GHz • Broad Band Internally Matched • Hermetically sealed package


    Original     		TIM1414-8 2-11C1B) MW50310196 Tim1414-10S-Parameters TIM1414-8 PDF

    TIM1415-8

    Abstract: No abstract text available
    Text: TOSHIBA TIM1415-8 MICROWAVE POWER GaAs FET Internally Matched Power GaAs FETs X, Ku-Band Features • High power - P1dB = 39.5 dBm at 14.5 GHz to 15.0 GHz • High gain - G1dB = 4.5 dB at 14.5 GHz to 15.0 GHz • Broad Band Internally Matched • Hermetically sealed package


    Original     		TIM1415-8 2-11C1B) MW50410196 TIM1415-8 PDF

    TIM1415-2

    Abstract: No abstract text available
    Text: TOSHIBA TIM1415-2 MICROWAVE POWER GaAs FET Internally Matched Power GaAs FETs X, Ku-Band Features • High power - P1dB = 33.5 dBm at 14.5 GHz to 15.0 GHz • High gain - G1dB = 6.0 dB at 14.5 GHz to 15.0 GHz • Broad Band Internally Matched • Hermetically sealed package


    Original     		TIM1415-2 MW50390196 TIM1415-2 PDF

    TIM1414-15

    Abstract: No abstract text available
    Text: TOSHIBA TIM1414-15 MICROWAVE POWER GaAs FET Internally Matched Power GaAs FETs X, Ku-Band Features • High power - P1dB =42.0 dBm at 14.0 GHz to14.5 GHz • High gain - G1dB = 6.0 dB at 14.0 GHz to 14.5 GHz • Broad Band Internally Matched • Hermetically sealed package


    Original     		TIM1414-15 2-11C1B) MW50370196 Tim1414-15S-Parameters TIM1414-15 PDF

    TIM1414

    Abstract: TIM1414-10A
    Text: TOSHIBA TIM1414-10A MICROWAVE POWER GaAs FET Internally Matched Power GaAs FETs X, Ku-Band Features • High power - P1dB =40.5 dBm at 14.0 GHz to14.5 GHz • High gain - G1dB = 6.0 dB at 14.0 GHz to 14.5 GHz • Broad Band Internally Matched • Hermetically sealed package


    Original     		TIM1414-10A 2-11C1B) MW50340196 Tim1414-10A TIM1414 PDF

    TIM1415-4

    Abstract: No abstract text available
    Text: TOSHIBA TIM1415-4 MICROWAVE POWER GaAs FET Internally Matched Power GaAs FETs X, Ku-Band Features • High power - P1dB = 36.5 dBm at 14.5 GHz to 15.0 GHz • High gain - G1dB = 5.5 dB at 14.5 GHz to 15.0 GHz • Broad Band Internally Matched • Hermetically sealed package


    Original     		TIM1415-4 MW50400196 TIM1415-4 PDF

    k 1413 FET

    Abstract: MGF1601B MGF1601
    Text: MITSUBISHI SEMICONDUCTOR GaAs FET MGF1601B MICROWAVE POWER GaAs FET DESCRIPTION The MGF1601B, medium-power GaAs FET with an N-channel Schottky gate, is designed for use in S to X band amplifiers and oscillators. The hermetically sealed metalceramic Unit:millimeters


    Original     		MGF1601B MGF1601B, k 1413 FET MGF1601B MGF1601 PDF

    MGF1801B

    Abstract: Microwave power GaAs
    Text: MITSUBISHI SEMICONDUCTOR GaAs FET MGF1801B MICROWAVE POWER GaAs FET DESCRIPTION The MGF1801B, medium-power GaAs FET with an N-channel Schottky gate, is designed for use in S to X band amplifiers and oscillators. The hermetically sealed metalceramic Unit:millimeters


    Original     		MGF1801B MGF1801B, 23dBm MGF1801B Microwave power GaAs PDF

    k 1413 FET

    Abstract: mitsubishi microwave MGF1801B MGF1801 MGF1
    Text: MITSUBISHI SEMICONDUCTOR GaAs FET MGF1801B MICROWAVE POWER GaAs FET DESCRIPTION The MGF1801B, medium-power GaAs FET with an N-channel Schottky gate, is designed for use in S to X band amplifiers and oscillators. The hermetically sealed metalceramic Unit:millimeters


    Original     		MGF1801B MGF1801B, 23dBm June/2004 k 1413 FET mitsubishi microwave MGF1801B MGF1801 MGF1 PDF

    MGF1601B

    Abstract: mitsubishi microwave MGF1601
    Text: MITSUBISHI SEMICONDUCTOR GaAs FET MGF1601B MICROWAVE POWER GaAs FET DESCRIPTION The MGF1601B, medium-power GaAs FET with an N-channel Schottky gate, is designed for use in S to X band amplifiers and oscillators. The hermetically sealed metalceramic Unit:millimeters


    Original     		MGF1601B MGF1601B, MGF1601B mitsubishi microwave MGF1601 PDF

    RPX 200

    Abstract: No abstract text available
    Text: RAYTTTTöN" COV MXCROUJAVE 70 & Raytheon Company Special Microwave Devices Operation v 75T?E21 □□□□401 □ 617 393 7300 Bearfoot Road ' Northboroligh, M A O 1532 - O f 7597221 RAYTHEON ICO» MICROWAVE £ 760-00401 RPX 6000 Series X-Band Power GaAs FET s


    OCR Scan     		RPX6000 RPX6030, RPX6033, RPX6035 RPX 200 PDF

    Untitled

    Abstract: No abstract text available
    Text: PRELIMINARY DATA SHEET_ N-CHANNEL GaAs MES FET NE960R2 SERIES 0.2 W X, Ku-BAND POWER GaAs MES FET DESCRIPTION The NE960R2 Series are 0.2 W GaAs MES FETs designed for middle power transm itter applications for X, Kuband microwave communication systems.


    OCR Scan     		NE960R2 NE961R200 NE960R200 NE960R275 P13775E PDF

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA MICROWAVE POWER GaAs FET TIM1415-4 Internally Matched Power GaAs FETs X, Ku-Band Features • High power - P1dB = 36.5 dBm at 14.5 GHz to 15.0 GHz • High gain - G 1dB = 5.5 dB at 14.5 GHz to 15.0 GHz • Broad Band Internally M atched • H erm etically sealed package


    OCR Scan     		TIM1415-4 MW50400196 PDF

    Tic 4148

    Abstract: No abstract text available
    Text: TOSHIBA MICROWAVE POWER GaAs FET TIM1414-8 Internally Matched Power GaAs FETs X, Ku-Band Features • High power - P1dB =39.5 dBm at 14.0 GHz to14.5 GHz • High gain - G 1dB = 5.0 dB at 14.0 GHz to 14.5 GHz • Broad Band Internally M atched • H erm etically sealed package


    OCR Scan     		TIM1414-8 Tic 4148 PDF

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA MICROWAVE POWER GaAs FET TIM1414-15 Internally Matched Power GaAs FETs X, Ku-Band Features • High power - P1dB =42.0 dBm at 14.0 GHz to14.5 GHz • High gain - G 1dB = 6.0 dB at 14.0 GHz to 14.5 GHz • Broad Band Internally M atched • H erm etically sealed package


    OCR Scan     		TIM1414-15 PDF

    JE 33

    Abstract: No abstract text available
    Text: TOSHIBA TIM1415-8 MICROWAVE POWER GaAs FET Internally Matched Power GaAs FETs X, Ku-Band Features • High power - P1dB = 39.5 dBm at 14.5 GHz to 15.0 GHz • High gain - G 1dB = 4.5 dB at 14.5 GHz to 15.0 GHz • Broad Band Internally M atched • H erm etically sealed package


    OCR Scan     		TIM1415-8 2-11C1B) MW50410196 JE 33 PDF

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA MICROWAVE POWER GaAs FET TIM1415-2 Internally Matched Power GaAs FETs X, Ku-Band Features • High power - P1dB = 33.5 dBm at 14.5 GHz to 15.0 GHz • High gain - G 1dB = 6.0 dB at 14.5 GHz to 15.0 GHz • Broad Band Internally M atched • H erm etically sealed package


    OCR Scan     		TIM1415-2 MW50390196 PDF

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA MICROWAVE POWER GaAs FET TIM1414-4A Internally Matched Power GaAs FETs X, Ku-Band Features • High power - P1dB = 36.5 dBm at 14.0 GHz to 14.5 GHz • High gain - G 1dB = 6.5 dB at 14.0 GHz to 14.5 GHz • Broad Band Internally M atched • H erm etically sealed package


    OCR Scan     		TIM1414-4A MW50290196 PDF

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA MICROWAVE POWER GaAs FET TIM1414-1OA Internally Matched Power GaAs FETs X, Ku-Band Features • High power - P1dB =40.5 dBm at 14.0 GHz to14.5 GHz • High gain - G 1dB = 6.0 dB at 14.0 GHz to 14.5 GHz • Broad Band Internally M atched • H erm etically sealed package


    OCR Scan     		TIM1414-1OA PDF

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA MICROWAVE POWER GaAs FET TIM1414-5 Internally Matched Power GaAs FETs X, Ku-Band Features • High power - P1dB =37.5 dBm at 14.0 GHz to14.5 GHz • High gain - G 1dB =6.0 dB at 14.0 GHz to 14.5 GHz • Broad Band Internally M atched • H erm etically sealed package


    OCR Scan     		TIM1414-5 MW50300196 PDF

    Untitled

    Abstract: No abstract text available
    Text: MITSUBISHI SEMICONDUCTOR GaAs FET MGF1801B MICROWAVE POWER GaAs FET DESCRIPTION The MGF1801B, medium-power GaAs FET with an N-channel Schottky gate, is designed for use in S to X band amplifiers and oscillators. The hermetically sealed metalceramic package


    OCR Scan     		MGF1801B MGF1801B, 23dBm 100mA PDF