miteq amf
Abstract: Medium Power Amplifiers x-band power amplifier power amplifiers
Text: TABLE OF CONTENTS CONTENTS INTRODUCTION Corporate Overview AMF Technology Overview AMF AMPLIFIERS Low-Noise Amplifiers Octave Band Multioctave Band Moderate Band Ultra-Broadband Low-Noise SATCOM Amplifiers C-Band Waveguide Input X-Band Waveguide Input Ku-Band Waveguide Input
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Medium Power Amplifiers
Abstract: No abstract text available
Text: TABLE OF CONTENTS CONTENTS INTRODUCTION Corporate Overview AMF Technology Overview AMF AMPLIFIERS Low-Noise Amplifiers Octave Band Multioctave Band Moderate Band Ultra-Broadband Low-Noise SATCOM Amplifiers C-Band Waveguide Input X-Band Waveguide Input Ku-Band Waveguide Input
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Micro-X marking "K"
Abstract: low noise Micro-X marking "K" Micro-X Marking E RO4350B rogers HEMT marking G HEMT marking K GD-32 hemt low noise die Micro-X Marking v transistor "micro-x" "marking" 3
Text: PRELIMINARY < Low Noise GaAs HEMT > MGF4941CL Micro-X type plastic package DESCRIPTION The MGF4941CL super-low noise InGaAs HEMT High Electron Mobility Transistor is designed for use in K band amplifiers. Outline Drawing FEATURES Low noise figure @ f=25.2GHz
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MGF4941CL
MGF4941CL
4000pcs
Micro-X marking "K"
low noise Micro-X marking "K"
Micro-X Marking E
RO4350B rogers
HEMT marking G
HEMT marking K
GD-32
hemt low noise die
Micro-X Marking v
transistor "micro-x" "marking" 3
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Untitled
Abstract: No abstract text available
Text: < Low Noise GaAs HEMT > MGF4963BL Micro-X type plastic package DESCRIPTION The MGF4963BL super-low noise InGaAs HEMT High Electron Mobility Transistor is designed for use in K band amplifiers. Outline Drawing FEATURES Low noise figure @ f=20GHz NFmin. = 0.70dB (Typ.)
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MGF4963BL
MGF4963BL
20GHz
4000pcs
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Untitled
Abstract: No abstract text available
Text: < Low Noise GaAs HEMT > MGF4964BL Micro-X type plastic package DESCRIPTION The MGF4964BL super-low noise InGaAs HEMT High Electron Mobility Transistor is designed for use in K band amplifiers. Outline Drawing FEATURES Low noise figure @ f=20GHz NFmin. = 0.65dB (Typ.)
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MGF4964BL
MGF4964BL
20GHz
4000pcs
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MGF4964
Abstract: Micro-X marking "K" MGF4964BL transistor "micro-x" "marking" 3 low noise Micro-X marking "K" HEMT marking K Low Noise Gaas GD-32 MGF4964B MGF496
Text: < Low Noise GaAs HEMT > MGF4964BL Micro-X type plastic package DESCRIPTION The MGF4964BL super-low noise InGaAs HEMT High Electron Mobility Transistor is designed for use in K band amplifiers. Outline Drawing FEATURES Low noise figure @ f=20GHz NFmin. = 0.65dB (Typ.)
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MGF4964BL
MGF4964BL
20GHz
4000pcs
MGF4964
Micro-X marking "K"
transistor "micro-x" "marking" 3
low noise Micro-X marking "K"
HEMT marking K
Low Noise Gaas
GD-32
MGF4964B
MGF496
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MGF4963BL
Abstract: HEMT marking K GD-32 low noise Micro-X marking "K" MGF4963B
Text: < Low Noise GaAs HEMT > MGF4963BL Micro-X type plastic package DESCRIPTION The MGF4963BL super-low noise InGaAs HEMT High Electron Mobility Transistor is designed for use in K band amplifiers. Outline Drawing FEATURES Low noise figure @ f=20GHz NFmin. = 0.70dB (Typ.)
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MGF4963BL
MGF4963BL
20GHz
4000pcs
HEMT marking K
GD-32
low noise Micro-X marking "K"
MGF4963B
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1 928 405 766
Abstract: GD-32 rogers 4403
Text: < Low Noise GaAs HEMT > MGF4941AL Micro-X type plastic package DESCRIPTION The MGF4941AL super-low noise InGaAs HEMT High Electron Mobility Transistor is designed for use in Ku band amplifiers. Outline Drawing FEATURES Low noise figure @ f=12GHz NFmin. = 0.35dB (Typ.)
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MGF4941AL
MGF4941AL
12GHz
4000pcs
1 928 405 766
GD-32
rogers 4403
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WR284* ISOLATOR
Abstract: MS3116E-10-6S WR340 flange dimensions
Text: Back to Amplifier Home Page AMF SATCOM AMPLIFIERS Introduction S-Band C-Band X-Band Ku-Band Ka-Band 40 – 60 GHz Low Noise Outline Drawings 100 Davids Drive • Hauppauge, NY 11788 • 631-436-7400 • Fax: 631-436-7430 • www.miteq.com TABLE OF CONTENTS
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2002/96/EC
2002/96/EC
C-39B
WR284* ISOLATOR
MS3116E-10-6S
WR340 flange dimensions
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RO4350B ROGERS
Abstract: transistor "micro-x" "marking" 3 RO4350B max current MGF4941CL GD-32 low noise Micro-X marking "K" RO4350B
Text: < Low Noise GaAs HEMT > MGF4941CL Micro-X type plastic package DESCRIPTION The MGF4941CL super-low noise InGaAs HEMT High Electron Mobility Transistor is designed for use in K band amplifiers. The MGF4941CL is designed for automotive application and AEC-Q101
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MGF4941CL
MGF4941CL
AEC-Q101
4000pcs
RO4350B ROGERS
transistor "micro-x" "marking" 3
RO4350B max current
GD-32
low noise Micro-X marking "K"
RO4350B
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Untitled
Abstract: No abstract text available
Text: < Low Noise GaAs HEMT > MGF4941CL Micro-X type plastic package DESCRIPTION The MGF4941CL super-low noise InGaAs HEMT High Electron Mobility Transistor is designed for use in K band amplifiers. The MGF4941CL is designed for automotive application and AEC-Q101
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MGF4941CL
MGF4941CL
AEC-Q101
4000pcs
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35 micro-X Package MARKING CODE Q
Abstract: transistor equivalent book FOR D 1047 zo 607 MA marking code s22 microwave transistor siemens transistor GaAS marking 576 zo 607 CFY25 CFY25-20 CFY25-20P
Text: CFY25 HiRel X-Band GaAs Low Noise / General Purpose MESFET • HiRel Discrete and Microwave Semiconductor • For professional pre- and driver-amplifiers • For frequencies from 500 MHz to 20 GHz • Hermetically sealed microwave package • Low noise figure, high gain, moderate power
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CFY25
CFY25-P
CFY25-23
CFY25-23P
CFY25-20
CFY25-20P
CFY25-nnl:
QS9000
35 micro-X Package MARKING CODE Q
transistor equivalent book FOR D 1047
zo 607 MA
marking code s22
microwave transistor siemens
transistor GaAS marking 576
zo 607
CFY25
CFY25-20
CFY25-20P
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marking code s22
Abstract: zo 607 MA CFY25 CFY25-20 CFY25-20P CFY25-23 CFY25-23P CFY25-P
Text: CFY25 HiRel X-Band GaAs Low Noise / General Purpose MESFET • HiRel Discrete and Microwave Semiconductor • For professional pre- and driver-amplifiers • For frequencies from 500 MHz to 20 GHz • Hermetically sealed microwave package • Low noise figure, high gain, moderate power
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CFY25
CFY25-P
CFY25-23
CFY25-23P
CFY25-20
CFY25-20P
CFY25-nnl:
QS9000
marking code s22
zo 607 MA
CFY25
CFY25-20
CFY25-20P
CFY25-23
CFY25-23P
CFY25-P
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GM15
Abstract: 137 marking Micro-X
Text: CFY25 HiRel X-Band GaAs Low Noise / General Purpose MESFET • HiRel Discrete and Microwave Semiconductor • For professional pre- and driver-amplifiers • For frequencies from 500 MHz to 20 GHz • Hermetically sealed microwave package • Low noise figure, high gain, moderate power
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CFY25
CFY25-P
CFY25-23
CFY25-23P
CFY25-20
CFY25-20P
CFY25-nnl:
QS9000
GM15
137 marking Micro-X
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MGF1802
Abstract: mgf431 MGF43180 mitsubishi mgf MGF1902B-65
Text: MGF431OD Series L1~o- o~i -oqof- SUPER LOW NOISE InOaAs HEMT DESCRIPTION OUTLINE DRAWING The MGF431OD series super-low-noise HEMT High Electron Mobility Transistor is designed for use in X to K band amplifiers. The hermetically sealed metal-ceramic package assures minimum parasitic losses, and has a
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MGF431OD
12GHz
MGF4314D:
MGF4316D:
MGF4317D:
MGF4318D:
12GHz
MGF4S17D-O1
MGF43I4E45.
MGF1802
mgf431
MGF43180
mitsubishi mgf
MGF1902B-65
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IG 057-2
Abstract: No abstract text available
Text: A m it s u b is h i MGFC4420D SERIES Die ELECTRONIC DEVICE GROUP DESCRIPTION FEATURES The MGFC4420D Series super-low-noise HEMT (High Electron Mobility Transistor) is designed for use in X to K band low noise amplifiers. These devices feature a 0.25 x 150|am "T"
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MGFC4420D
12GHz
MGFC4424D:
MGFC4427D:
MGFC4420C
MGFC4424D-02
MGFC4424D-03
MGFC4427D-03
IG 057-2
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fet transistor a03
Abstract: MGFC4419
Text: MITSUBISHI SEMICONDUCTOR <GaAs FET> MGFC4419G InGaAs HEMT DESCRIPTION The MGFC4419G low-noise HEMT High Electron Mobility Transistor is designed for use in X to K band amplifiers. OUTLINE DRAWING FEATURES • Low noise figure NFmin. = 0.50dB (MAX.) • High associated gain
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MGFC4419G
MGFC4419G
12GHz
fet transistor a03
MGFC4419
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MGF4918D
Abstract: MGF4910D MGF4916D MGF4917D mgf4914 mitsubishi mgf mitsubishi mgf-4918d
Text: ! MITSUBISHI SEMICONDUCTOR <GaAs FET> MGF4910D Series TAPE CARRIER SUPER LOW NOISE InGaAs HEMT DESCRIPTION The MGF4910D series super-low-noise HEMT High Electron Mobility Transistor is designed for use in X to l< band amplifiers. The hermetically sealed metal-ceramic
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MGF4910D
12GHz
F4914D:
F4916D:
F4917D:
F4918D:
12GHz
MGF4914D
MGF4918D
MGF4916D
MGF4917D
mgf4914
mitsubishi mgf
mitsubishi mgf-4918d
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MGF4317D
Abstract: MGF-4317D MGF4310 MGF4316D MGF4318D 4310D
Text: MITSUBISHI SEMICONDUCTOR <GaAs FET> M G F4310D Series SUPER LOW NOISE InGaAs HEMT DESCRIPTION OUTLINE DRAWING The MGF4310D series super-low-noise HEMT High Electron Mobility Transistor is designed for use in X to K band amplifiers. The hermetically sealed metal-ceramic
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F4310D
MGF4310D
12GHz
GF4314D:
GF4316D:
F4317D:
GF4318D:
12GHz
4310D
MGF4317D
MGF-4317D
MGF4310
MGF4316D
MGF4318D
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GaAs FET HEMT Chips
Abstract: on 5295 transistor MGFC4453A transistor on 4436 InGaAs HEMT mitsubishi low noise x band hemt transistor fet transistor a03 FET Spec sheet transistor on 5295 5458 transistor
Text: MITSUBISHI SEMICONDUCTOR <GaAs FET> MGFC4453A InGaAs HEMT DESCRIPTION The M G FC4453A low-noise HEMT High Electron Mobility OUTLINE DRAWING Transistor is designed for use in X to K band amplifiers. Unit : u m FEATURES Low noise figure @ f=12GHz NFmin. = 0.40dB (TYP.)
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MGFC4453A
MGFC4453A
12GHz
25pcs
GaAs FET HEMT Chips
on 5295 transistor
transistor on 4436
InGaAs HEMT mitsubishi
low noise x band hemt transistor
fet transistor a03
FET Spec sheet
transistor on 5295
5458 transistor
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MGF4310
Abstract: MGF4314D MGF4318D MGF4310D MGF4316D MGF4317D M5M27C102P MGF4317 MGF4318 MGF431
Text: MITSUBISHI SEMICONDUCTOR <GaAs FET> M G F4310D Series SUPER LOW NOISE InGaAs HEMT DESCRIPTION OUTLINE DRAWING The MGF4310D series super-low-noise HEMT High Electron Mobility Transistor is designed for use in X to K band amplifiers. The hermetically sealed metal-ceramic
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MGF4310D
12GHz
MGF4314D:
MGF4316D.
MGF4317D:
MGF4318D:
M5M27C102P
RV-15
MGF4310
MGF4314D
MGF4318D
MGF4316D
MGF4317D
MGF4317
MGF4318
MGF431
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MGF4310
Abstract: 6020M f491
Text: MITSUBISHI SEMICONDUCTOR <GaAs FET> M G F4910F Series S U P E R LOW NOISE InGaAs HEMT DESCRIPTION The M GF4910F series super-low-noise HEMT High Electron Mobility Transistor is designed for use in X to K band amplifiers. The hermetically sealed metal-ceramic
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F4910F
GF4910F
MGF4310F
12GHz
GF4919F:
GF4916F:
12GHz
27C102P,
RV-15
MGF4310
6020M
f491
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mgf1908
Abstract: MGF1908A MGF1303B
Text: MITSUBISHI SEMICONDUCTOR <GaAs FET> MGF1908A TAPE CARRIER LOW NOISE GaAs FET DESCRIPTION The MGF1908A is a low noise GaAs FET with an N-channel Schottky gate,which is designed for use in S to X band amplifiers and oscillators. The hermetically sealed metalceramic package assures minimum parasitic losses, and
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MGF1908A
MGF1908A
MGF1303B.
12GHz
mgf1908
MGF1303B
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MGF1907
Abstract: MGF1907A mgf1302 MGF1302 equivalent
Text: MITSUBISHI SEMICONDUCTOR <GaAs FET> MGF1907A TAPE CARRIER LOW NOISE GaAs FET DESCRIPTION The MGF1907A is a low noise GaAs FET with an N-channel Schottky gate,which is designed for use in S to X band amplifiers and oscillators. The hermetically sealed metalceramic package assures minimum parasitic losses, and
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MGF1907A
MGF1907A
MGF1302.
12GHz
30rnA
MGF1907
mgf1302
MGF1302 equivalent
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