Untitled
Abstract: No abstract text available
Text: Hebei I.T. Shanghai Co., Ltd. SPECIFICATION SS1 2N8W3C Part No.： Features： z High radiometric power per LED z Very long operating life (up to 100K hours) z Low voltage DC operated z More Energy Efficient than Incandescent and most Halogen lamps z Good color uniformity
|
Original
|
35cm2/1W
|
PDF
|
Untitled
Abstract: No abstract text available
Text: Hebei I.T. Shanghai Co., Ltd. SPECIFICATION Part No.： 4V AC1 3CW3 Features： z High radiometric power per LED z Very long operating life (up to 100K hours) z Low voltage DC operated z More Energy Efficient than Incandescent and most Halogen lamps z Good color uniformity
|
Original
|
35cm2/1W
|
PDF
|
SG15N7W3-50mA
Abstract: No abstract text available
Text: Hebei I.T. Shanghai Co., Ltd SPECIFICATION Part No ：SG15N7W3-50mA Features： z High radiometric power per LED z Very long operating life sunpu (up to 100K hours) + + z Low voltage DC operated - - z More Energy Efficient than Incandescent and most Halogen lamps
|
Original
|
SG15N7W3-50mA
recomm00
35cm2/W
SG15N7W3-50mA
|
PDF
|
SR12N3W3C
Abstract: No abstract text available
Text: Hebei I.T. Shanghai Co., Ltd. SPECIFICATION Part No.： SR12N3W3C Features： z High radiometric power per LED z Very long operating life (up to 100K hours) sunpu + + z Low voltage DC operated z More Energy Efficient than Incandescent and most Halogen lamps
|
Original
|
SR12N3W3C
35cm2/1W
SR12N3W3C
|
PDF
|
Untitled
Abstract: No abstract text available
Text: Hebei I.T. Shanghai Co., Ltd. SPECIFICATION Part No.： 10V AC30DW3 Features： z High radiometric power per LED z Very long operating life (up to 100K hours) z Low voltage DC operated + pu sun z More Energy Efficient than Incandescent and most Halogen lamps
|
Original
|
AC30DW3
35cm2/1W
|
PDF
|
WF-4
Abstract: No abstract text available
Text: Hebei I.T. Shanghai Co., Ltd. SPECIFICATION SS1 2N7W3C Part No.： Features： z High radiometric power per LED z Very long operating life sunpu (up to 100K hours) + z Low voltage DC operated z More Energy Efficient than Incandescent and most Halogen lamps
|
Original
|
35cm2/1W
WF-4
|
PDF
|
marking wl3
Abstract: marking code WL3 diode 4 pin marking code WL3 WL3 marking MD218B MD218 11-md218b WL4 MARKING DIODE DFN10 DFN-10
Text: 11-MD218B Version Issue Date File Name Total Page : A.003 : 2009-02-10 : SP-MD218B-A.003.doc : 17 130mA, 10Bit Current Sinking VCM Driver with I2C Interface 新竹市展業一路 9 號 7 樓之 1 SILICON TOUCH TECHNOLOGY INC. 9-4F-3, Prosperity Rd I, Science-Based Industrial Park
|
Original
|
11-MD218B
SP-MD218B-A
130mA,
10Bit
Tel886-3-5727171
Fax886-3-5727390
10-Bit
11-MD218B
marking wl3
marking code WL3 diode 4 pin
marking code WL3
WL3 marking
MD218B
MD218
WL4 MARKING DIODE
DFN10
DFN-10
|
PDF
|
MD218
Abstract: md218a MD218B autofocus IC Auto-Focus DFN10 DFN-10 autofocus wl3 diode
Text: 11-MD218A Version Issue Date File Name Total Page : A.001 : 2008-04-14 : SP-MD218A-A.001.doc : 17 130mA, 10Bit Current Sinking VCM Driver with I2C Interface 新竹市展業一路 9 號 7 樓之 1 SILICON TOUCH TECHNOLOGY INC. 9-4F-3, Prosperity Rd I, Science-Based Industrial Park
|
Original
|
11-MD218A
SP-MD218A-A
130mA,
10Bit
Tel886-3-5727171
Fax886-3-5727390
10-Bit
11-MD218A
MD218
md218a
MD218B
autofocus IC
Auto-Focus
DFN10
DFN-10
autofocus
wl3 diode
|
PDF
|
sot143 Marking code wl4
Abstract: WL4 SOT143 1K resistor Type MHP A 002 52 05 welwyn MHP 40101-019 SQM5 thermistor PCR 406 marking 16 sot143 planar Resistor BPC
Text: Fixed Resistors Product Data Short Form Belief in Technology 1 Fixed Resistors TT electronics plc is a global electronics company. Within its electronic components group are multiple manufacturing facilities for fixed resistors and dedicated engineering teams providing custom solutions.
|
Original
|
70-year
sot143 Marking code wl4
WL4 SOT143
1K resistor
Type MHP A 002 52 05
welwyn MHP
40101-019
SQM5
thermistor PCR 406
marking 16 sot143
planar Resistor BPC
|
PDF
|
hyb514
Abstract: 514400 Q67100-Q973 HYB514400B
Text: 1Mx4-Bit Dynamic RAM Low Power 1Mx4-Bit Dynamic RAM HYB514400BJ/BJL -50/-60/-70 Advanced Information • 1 048 576 words by 4-bit organization • 0 to 70 °C operating temperature • Fast Page Mode Operation • Performance: -50 -60 -70 tRAC RAS access time
|
Original
|
HYB514400BJ/BJL
P-SOJ-26/20
GPJ05626
hyb514
514400
Q67100-Q973
HYB514400B
|
PDF
|
Q67100-Q1104
Abstract: Q67100-Q1105 Q67100-Q1106
Text: 2M x 8 - Bit Dynamic RAM 2k Refresh Hyper Page Mode- EDO HYB5117805BSJ -50/-60/-70 Advanced Information • 2 097 152 words by 8-bit organization • 0 to 70 °C operating temperature • Performance: -50 -60 -70 tRAC RAS access time 50 60 70 ns tCAC CAS access time
|
Original
|
HYB5117805BSJ
HYB5117805BSJ-50/-60/-70
P-SOJ-28-3
400mil)
81max
GPJ05699
Q67100-Q1104
Q67100-Q1105
Q67100-Q1106
|
PDF
|
EDO DRAM
Abstract: Q67100-Q1104 Q67100-Q1105 Q67100-Q1106 smd code marking wl5
Text: 2M x 8 - Bit Dynamic RAM 2k Refresh Hyper Page Mode- EDO HYB5117805BSJ -50/-60/-70 Advanced Information • 2 097 152 words by 8-bit organization • 0 to 70 °C operating temperature • Performance: -50 -60 -70 tRAC RAS access time 50 60 70 ns tCAC CAS access time
|
Original
|
HYB5117805BSJ
HYB5117805BSJ-50/-60/-70
P-SOJ-28-3
400mil)
81max
GPJ05699
EDO DRAM
Q67100-Q1104
Q67100-Q1105
Q67100-Q1106
smd code marking wl5
|
PDF
|
5117400
Abstract: fast page mode dram controller HYB5117400BJ HYB5117400BT
Text: 4M x 4-Bit Dynamic RAM HYB5117400BJ -50/-60/-70 HYB5117400BT -50/-60/-70 Advanced Information • 4 194 304 words by 4-bit organization • 0 to 70 °C operating temperature • Performance: -50 -60 -70 tRAC RAS access time 50 60 70 ns tCAC CAS access time
|
Original
|
HYB5117400BJ
HYB5117400BT
5117400BJ/BT-50/-60/-70
P-SOJ-26/24
GPJ05628
GPX05857
5117400
fast page mode dram controller
|
PDF
|
WL4 550
Abstract: Q67100-Q1092 Q67100-Q1093 Q67100-Q1094 SOJ-28
Text: 2M x 8-Bit Dynamic RAM 2k-Refresh HYB 5117800BSJ-50/-60/-70 Advanced Information • • • • • • • • • • • 2 097 152 words by 8-bit organization 0 to 70 ˚C operating temperature Performance: -50 -60 -70 tRAC RAS access time 50 60 70 ns tCAC
|
Original
|
5117800BSJ-50/-60/-70
GPJ05699
P-SOJ-28-3
WL4 550
Q67100-Q1092
Q67100-Q1093
Q67100-Q1094
SOJ-28
|
PDF
|
|
|
5116 ram
Abstract: Q67100-Q1107 HYB5116165BSJ-50 HYB5116165BSJ-60 HYB5116165BSJ-70 HYB5118165BSJ HYB5118165BSJ-50 HYB5118165BSJ-60 HYB5118165BSJ-70
Text: 1M x 16-Bit Dynamic RAM 1k & 4k Refresh Hyper Page Mode- EDO HYB5116165BSJ -50/-60/-70 HYB5118165BSJ -50/-60/-70 Advanced Information • • • • • • • • • • • • 1 048 576 words by 16-bit organization 0 to 70 °C operating temperature
|
Original
|
16-Bit
HYB5116165BSJ
HYB5118165BSJ
HYB5118165BSJ-50)
HYB5118165BSJ-60)
HYB51181
165BSJ-50/-60/-70
16-EDO
P-SOJ-42
5116 ram
Q67100-Q1107
HYB5116165BSJ-50
HYB5116165BSJ-60
HYB5116165BSJ-70
HYB5118165BSJ-50
HYB5118165BSJ-60
HYB5118165BSJ-70
|
PDF
|
HYB5116400BJ
Abstract: HYB5116400BT
Text: 4M x 4-Bit Dynamic RAM HYB5116400BJ -50/-60/-70 HYB5116400BT -50/-60/-70 Advanced Information • 4 194 304 words by 4-bit organization • 0 to 70 °C operating temperature • Performance: -50 -60 -70 tRAC RAS access time 50 60 70 ns tCAC CAS access time
|
Original
|
HYB5116400BJ
HYB5116400BT
5116400BJ/BT-50/-60/-70
P-SOJ-26/24
GPJ05628
GPX05857
|
PDF
|
5116 ram
Abstract: HYB5118165BSJ-50 HYB5116165BSJ-50 HYB5116165BSJ-60 HYB5116165BSJ-70 HYB5118165BSJ HYB5118165BSJ-60 HYB5118165BSJ-70 TRAC-70
Text: 1M x 16-Bit Dynamic RAM 1k & 4k Refresh Hyper Page Mode- EDO HYB5116165BSJ -50/-60/-70 HYB5118165BSJ -50/-60/-70 Advanced Information • • • • • • • • • • • • 1 048 576 words by 16-bit organization 0 to 70 °C operating temperature
|
Original
|
16-Bit
HYB5116165BSJ
HYB5118165BSJ
HYB5118165BSJ-50)
HYB5118165BSJ-60)
HYB51181
165BSJ-50/-60/-70
16-EDO
P-SOJ-42
5116 ram
HYB5118165BSJ-50
HYB5116165BSJ-50
HYB5116165BSJ-60
HYB5116165BSJ-70
HYB5118165BSJ-60
HYB5118165BSJ-70
TRAC-70
|
PDF
|
5117405
Abstract: smd code Wl3 5117405BJ-60
Text: 4M x 4-Bit Dynamic RAM 2k & 4k Refresh Hyper Page Mode- EDO HYB5116405BJ/BT -50/-60/-70 HYB5117405BJ/BT -50/-60/-70 Advanced Information • • • • • • • • • • • • 4 194 304 words by 4-bit organization 0 to 70 °C operating temperature
|
Original
|
HYB5116405BJ/BT
HYB5117405BJ/BT
HYB5116405BJ/BT-50)
HYB5116405BJ/BT-60)
HYB53
HYB5116
405BJ/BT-50/-60/-70
GPJ05628
P-TSOPII-26/24
300mil)
5117405
smd code Wl3
5117405BJ-60
|
PDF
|
5117405
Abstract: No abstract text available
Text: 4M x 4-Bit Dynamic RAM 2k & 4k Refresh Hyper Page Mode- EDO HYB5116405BJ/BT -50/-60/-70 HYB5117405BJ/BT -50/-60/-70 Advanced Information • • • • • • • • • • • • 4 194 304 words by 4-bit organization 0 to 70 °C operating temperature
|
Original
|
HYB5116405BJ/BT
HYB5117405BJ/BT
HYB5116405BJ/BT-50)
HYB5116405BJ/BT-60)
HYB5116
405BJ/BT-50/-60/-70
GPJ05628
P-TSOPII-26/24
300mil)
GPX05857
5117405
|
PDF
|
Q67100-Q1092
Abstract: Q67100-Q1093 Q67100-Q1094 WL10
Text: 2M x 8-Bit Dynamic RAM HYB5117800BSJ-50/-60/-70 Advanced Information • 2 097 152 words by 8-bit organization • 0 to 70 °C operating temperature • Performance: -50 -60 -70 tRAC RAS access time 50 60 70 ns tCAC CAS access time 13 15 20 ns tAA Access time from address
|
Original
|
HYB5117800BSJ-50/-60/-70
5117800BSJ-50/-60/-70
81max
GPJ05699
P-SOJ-28-3
Q67100-Q1092
Q67100-Q1093
Q67100-Q1094
WL10
|
PDF
|
E1354E
Abstract: No abstract text available
Text: PRELIMINARY DATA SHEET 4G bits DDR2 Mobile RAM EDB4432BABH 128M words x 32 bits Specifications Features • Density: 4G bits • Organization: 16M words × 32 bits × 8 banks • Package: 134-ball FBGA — Package size: 11.5mm × 11.5mm — Ball pitch: 0.65mm
|
Original
|
EDB4432BABH
134-ball
1066Mbps
M01E1007
E1890E20
E1354E
|
PDF
|
Untitled
Abstract: No abstract text available
Text: TOSHIBA MOS MEMORY PRODUCTS TC521OOOP/J 1MBit 256K X 4 Field Memory PRELIMINARY DESCRIPTION The TC521000P/J is a CMOS 1Mbit Field Memory organized as 256K words by 4 bits, and features separate inputs/outputs, each equipped with an 8 bit serial shift register (32K
|
OCR Scan
|
TC521OOOP/J
TC521000P/J
33MHz
TC521000P/J.
TC521060P/J
DIP40-P-600
U-25-QQ5
63SMIN
|
PDF
|
TC521000P
Abstract: ysm-c
Text: TOSHIBA MOS MEMORY PRODUCTS TC521000P/J 1M B i t 256K X 4 Field M e m o r y PRELIMINARY :D E S C R I P T I O N The TC521000P/J is a CMOS lMbi t Field Memory organized as 256K words by 4 bits, and features separate inputs/outputs, e ach equipped with an 8 bit serial shift register (32K
|
OCR Scan
|
TC521000P/J
TC521000P/J
33MHz
TC521000P/J.
DIP40-P-600
U-25-Q05
63SMIN
TC521000P
ysm-c
|
PDF
|
Untitled
Abstract: No abstract text available
Text: Panasonic Chip Inductors Japan Singapore Chip Inductors GE * S e r ie s C h ip Type: III RE, ND, NC, NA, FD, FC, FA, SA, FB, PC, PA, Type RE Size 1608 Type D D (Size 2012) c o y c s a Type D C (Size 2520) Type D A (Size 3225) Type D B (Size 4532) b i t t z t t & L t z i m m } (r e )
|
OCR Scan
|
60JilÂ
|
PDF
|