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    5117405 Search Results

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    5117405 Price and Stock

    ROHM Semiconductor MSM5117405F-60T-DKX

    IC DRAM 16M PARALLEL 26TSOP
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey MSM5117405F-60T-DKX Tray 3,188 1
    • 1 $8.73
    • 10 $8.036
    • 100 $7.03613
    • 1000 $6.36639
    • 10000 $6.36639
    Buy Now
    MSM5117405F-60T-DKX Tray
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 -
    Buy Now

    ROHM Semiconductor MSM5117405F-60J3-7

    IC DRAM 16MBIT PARALLEL 26SOJ
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey MSM5117405F-60J3-7 Tube 1,890
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 $5.77308
    Buy Now

    Phoenix Contact 1740518

    Pluggable Terminal Blocks 3 Pos 5.08mm pitch Through Hole Header
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Mouser Electronics 1740518 257
    • 1 $0.86
    • 10 $0.837
    • 100 $0.721
    • 1000 $0.706
    • 10000 $0.706
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    TTI 1740518 Each 50
    • 1 -
    • 10 -
    • 100 $0.73
    • 1000 $0.69
    • 10000 $0.69
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    Phoenix Contact 1740547

    Pluggable Terminal Blocks MVSTBW 2 5/ 5-ST BK
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Mouser Electronics 1740547 12
    • 1 $5.06
    • 10 $4.93
    • 100 $4.23
    • 1000 $4.15
    • 10000 $4.15
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    TTI 1740547 Bulk 50
    • 1 -
    • 10 -
    • 100 $5.19
    • 1000 $5.19
    • 10000 $5.19
    Buy Now

    Phoenix Contact 1740521

    Pluggable Terminal Blocks 4 Pos 5.08mm pitch Through Hole Header
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Mouser Electronics 1740521
    • 1 $0.99
    • 10 $0.99
    • 100 $0.985
    • 1000 $0.985
    • 10000 $0.983
    Get Quote

    5117405 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    k2624

    Abstract: D-50 MSM5117405 MSM5117405D MSM5117405D-50 MSM5117405D-60 MSM5117405D-70
    Text: 作成 :1999 年 1 月 電子デバイス M SM 5117405D 4,194,304-Word x 4-Bit DYNAMIC RAM : EDO 機 能 付 き 高 速 ペ ー ジ モ ー ド • 概要 5117405D はCMOS プロセス技術を用いた 4,194,304 ワードx4 ビット構成のダイナミックラ


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    PDF 5117405D 304-Word MSM5117405D SOJ26/24 300mil SOJ26/24-P-300-1 MSM5117405D-xxSJ) TSOPII26/24-P-300-1 MSM5117405D-xxTS-K) k2624 D-50 MSM5117405 MSM5117405D MSM5117405D-50 MSM5117405D-60 MSM5117405D-70

    SPT0305

    Abstract: Q67100-Q1101 q67100-q1102 WCs MARKING SMD MARKING code ASC code marking rah
    Text: 4M x 4-Bit Dynamic RAM 2k & 4k Refresh Hyper Page Mode - EDO HYB 5116405BJ-50/-60 HYB 5117405BJ-50/-60 HYB 3116405BJ/BT(L)-50/-60 HYB 3117405BJ/BT-50/-60 Advanced Information • 4 194 304 words by 4-bit organization • 0 to 70 °C operating temperature


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    PDF 5116405BJ-50/-60 5117405BJ-50/-60 3116405BJ/BT 3117405BJ/BT-50/-60 405BJ-50/-60 405BJ/BT P-TSOPII-26/24-1 GPX05857 SPT0305 Q67100-Q1101 q67100-q1102 WCs MARKING SMD MARKING code ASC code marking rah

    k2624

    Abstract: D-50 MSM5117405 MSM5117405D MSM5117405D-50 MSM5117405D-60 MSM5117405D-70
    Text: 作成 :1999 年 1 月 電子デバイス M SM 5117405D 4,194,304-Word x 4-Bit DYNAMIC RAM : EDO 機 能 付 き 高 速 ペ ー ジ モ ー ド • 概要 5117405D はCMOS プロセス技術を用いた 4,194,304 ワードx4 ビット構成のダイナミックラ


    Original
    PDF 5117405D 304-Word MSM5117405D SOJ26/24 300mil SOJ26/24-P-300-1 MSM5117405D-xxSJ) TSOPII26/24-P-300-1 MSM5117405D-xxTS-K) k2624 D-50 MSM5117405 MSM5117405D MSM5117405D-50 MSM5117405D-60 MSM5117405D-70

    marking wl3

    Abstract: V53C517405A WL10 WL12 WL17
    Text: MOSEL VITELIC V53C517405A 4M X 4 EDO PAGE MODE CMOS DYNAMIC RAM V53C517405A 50 60 Max. RAS Access Time, tRAC 50 ns 60 ns Max. Column Address Access Time, (tCAA) 25 ns 30 ns Min. Extended Data Out Page Mode Cycle Time, (tPC) 20 ns 25 ns Min. Read/Write Cycle Time, (tRC)


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    PDF V53C517405A cycles/32 24/26-pin marking wl3 V53C517405A WL10 WL12 WL17

    hm5x1

    Abstract: No abstract text available
    Text: HM5116405 Series 5117405 Series 4,194,304-word x 4-bit Dynamic RAM HITACHI ADE-203-633 C Z Rev. 3.0 Feb. 27, 1997 Description The Hitachi H M 5116405 Series, HM 5117405 Series are CMOS dynamic RAMs organized 4,194,304-word x 4-bit. They employ the most advanced CMOS technology for high performance and low power. The


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    PDF HM5116405 HM5117405 304-word ADE-203-633 26-pin ns/60 ns/70 hm5x1

    5117405

    Abstract: No abstract text available
    Text: HM5116405 Series 5117405 Series 4,194,304-word x 4-bit Dynamic Random Access Memory HITACHI ADE-203-633A Z Rev. 1.0 Oct. 14,1996 Description The Hitachi HM5116405 Series, H M 5117405 Series are CMOS dynamic RAMs organized 4,194,304-word X 4-bit. They employ the m ost advanced CMOS technology for high performance and low power. The


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    PDF HM5116405 HM5117405 304-word ADE-203-633A 26-pin ns/70 5117405

    M5117405

    Abstract: msm5117405a Q020G m51174
    Text: O K I Semiconductor_ MSM5 1 174 05 A_ 4,194,304-Word x 4-Bit DYNAMIC RAM : FAST PAGE MODE TYPE WITH EDO DESCRIPTION T he M SM 5117405A is a4,194,304-word x 4-bit d yn am ic R A M fab ricated in O K I’s C M O S silico n gate technology. The M SM 5117405A ach ieves h ig h in teg ratio n , high-speed operatio n, and low -pow er


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    PDF MSM5117405A_ 304-Word MSM5117405A 26/24-pin cycles/32 M5117405 Q020G m51174

    Untitled

    Abstract: No abstract text available
    Text: SIEMENS HYB 5116405BJ/BT -50/-60/-70 HYB 5117405BJ/BT -50/-60/-70 4M x 4-Bit Dynamic RAM 2k & 4k Refresh Hyper Page Mode - EDO P re lim in a ry In fo rm a tio n m ax. 6 6 0 m W a ctive • 4 194 3 0 4 w o rd s by 4 -b it o rg a n iz a tio n • 0 to 70 C o p e ra tin g te m p e ra tu re


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    THM324005BS

    Abstract: No abstract text available
    Text: TOSHIBA THM324005BS/BSG-60/70 PRELIMINARY 4,194,304 WORDS X 32 BIT EDO DYNAMIC RAM MODULE Description The THM 324005BS/BSG is a 4,194,304 w ords by 32 bits Hyper Page M ode (EDO) dynamic RAM m odule which is assem ­ bled with 8 pcs of T C 5117405BSJ on the printed circuit board. This m odule is optimized for application to the systems which


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    PDF THM324005BS/BSG-60/70 324005BS/BSG 5117405BSJ THMxxxxxx-60) THMxxxxxx-70) DM16020695 THM324005BS/BSG 08MAX. 324005BS THM324005BS

    Untitled

    Abstract: No abstract text available
    Text: SIEMENS 4M x 4-Bit Dynamic RAM 2k & 4k-Refresh Hyper Page Mode- EDO HYB 5116405BJ -50/-60/-70 HYB 5117405BJ -50/-60/-70 Advanced Information • 4 194 304 words by 4-bit organization • 0 to 70 ’C operating temperature • Performance: -50 -60 -70 ÍRAC


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    PDF 5116405BJ 5117405BJ 5116405BJ-50) 5116405BJ-60) 5116405BJ-70) 5117405BJ-50) 5117405BJ-60) 5117405BJ-70) 405BJ-50/-60/-70 85max

    thm3640*5

    Abstract: No abstract text available
    Text: TOSHIBA THM3640F5BS/BSG-60/70 PRELIMINARY 4,194,304 WORDS X 36 BIT EDO DYNAMIC RAM MODULE Description The TH M 3640F5BS/BSG is a 4,194,304 w ords by 36 bits Hyper Page M ode (EDO) dynamic RAM m odule which is assem ­ bled with 8 pcs of TC 5117405BSJ and 1 pc of TC 5117445BSJ on the printed circuit board. This m odule is optimized for


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    PDF THM3640F5BS/BSG-60/70 3640F5BS/BSG 5117405BSJ 5117445BSJ 198mW THMxxxxxx-60) 489mW THM364QF5BS/BSG-60A70 DM16040595 THM3640F5BS/BSG thm3640*5

    5117405BJ-50

    Abstract: No abstract text available
    Text: SIEM EN S 4M x 4-Bit Dynamic RAM 2k & 4k Refresh Hyper Page Mode - EDO HYB 5116405BJ-50/-60 HYB 5117405BJ-50/-60 HYB 3116405BJ/BT(L)-50/-60 HYB 3117405BJ/BT-50/-60 Advanced Information • 4 194 304 words by 4-bit organization • 0 to 70 °C operating temperature


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    PDF 5116405BJ-50/-60 5117405BJ-50/-60 3116405BJ/BT 3117405BJ/BT-50/-60 405BJ/BT 405BJ-50/-60 GPX05857 5117405BJ-50

    MSM5117405D

    Abstract: MSM5117405D-50 MSM5117405D-60 MSM5117405D-70
    Text: O K I Semiconductor T h is v e rs io n :A p r.1 999 M S M 5 1 1 7 4 0 5 P _ 4,194,304-W o rd x 4-B it D Y N A M IC RAM : FA ST PAGE M O D E T Y P E W ITH EDO D ESC R IP TIO N The M SM 5117405D is a 4,194,304-w ord x 4-bit dynam ic RA M fabricated in O ki’s silicon-gate CM OS


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    PDF 7405D 304-Word MSM5117405D 26/24-pin es/32 MSM5117405D-50 MSM5117405D-60 MSM5117405D-70

    Untitled

    Abstract: No abstract text available
    Text: SIEMENS 4M x 4-Bit Dynamic RAM 2k & 4k-Refresh Hyper Page Mode- EDO HYB 5116405BJ -50/-60/-70 HYB 5117405BJ -50/-60/-70 Advanced Information • 4 194 304 words by 4-bit organization • 0 to 70 "C operating temperature • Performance: -50 -60 -70 ^R A C


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    PDF 5116405BJ 5117405BJ 5116405BJ-50) 5116405BJ-60) 5116405BJ-70) fi23Sb05 405BJ-50/-60/-70 P-SOJ-26/24 BI24X A535b05

    Untitled

    Abstract: No abstract text available
    Text: SIEM EN S 4M x 4-Bit Dynamic RAM 2k & 4k Refresh Hyper Page Mode - EDO HYB 5116405BJ-50/-60 HYB 5117405BJ-50/-60 HYB 3116405BJ/BT(L)-50/-60 HYB 3117405BJ/BT-50/-60 Advanced Information • 4 194 304 words by 4-bit organization • 0 to 70 °C operating temperature


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    PDF 5116405BJ-50/-60 5117405BJ-50/-60 3116405BJ/BT 3117405BJ/BT-50/-60 -5J-26/24-1 300mil) 405BJ-50/-60 405BJ/BT

    300mil-wide trays

    Abstract: Q67100-Q2156 Q67100-Q2157
    Text: SIEM EN S 4M X 32-Bit EDO-DRAM Module HYM 324025S/GS-50/-60 Advanced Information • 4 194 304 words by 32-bit organization • Fast access and cycle tim e 50 ns access time 84 ns cycle tim e -50 version 60 ns access tim e 104 ns cycle tim e (-60 version)


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    PDF 32-Bit 324025S/GS-50/-60 324025S/GS-50) 324025S/GS-60) ModufiE35bD5 L-SIM-72-12 B235b05 300mil-wide trays Q67100-Q2156 Q67100-Q2157

    MSM5117405

    Abstract: MSM5117405B
    Text: O K I Semiconductor MSM5 1 17405B_ E2G0039-17-41 4,194,304-Word x 4-Bit DYNAMIC RAM : FAST PAGE MODE TYPE WITH EDO DESCRIPTION The 5117405B is a 4,194,304-word x 4-bit dynamic RAM fabricated in Oki's silicon-gate CMOS technology. The 5117405B achieves high integration, high-speed operation, and low-power


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    PDF E2G0039-17-41 MSM5117405B_ 304-Word MSM5117405B 26/24-pin MSM5117405

    Untitled

    Abstract: No abstract text available
    Text: HM5116405 Series 5117405 Series 4,194,304-word x 4-bit Dynamic RAM HITACHI ADE-203-633 C Z Rev. 3.0 Feb. 27, 1997 Description The Hitachi HM5116405 Series, 5117405 Series are CMOS dynamic RAMs organized 4,194,304-word x 4-bit. They employ the most advanced CMOS technology for high performance and low power. The


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    PDF HM5116405 HM5117405 304-word ADE-203-633 26-pin

    5116405

    Abstract: Nippon capacitors
    Text: H B 5 6 E 8 3 6 / H B 5 6 E 4 3 6 S e r i e s HB56E836 32 MB Unbuffered EDO DRAM SIMM 8-Mword X 36-bit, 2 k Refresh, 2-Bank Module 16 pcs of 4 M X 4 and 8 pcs of 4 M x 1 Components HB56E436 16 MB Unbuffered EDO DRAM SIMM 4-Mword x 36-bit, 2 k Refresh, 1-Bank Module


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    PDF HB56E836 36-bit, HB56E436 ADE-203-673A 16-Mbit HM5117405) HM514105) 5116405 Nippon capacitors

    Untitled

    Abstract: No abstract text available
    Text: HM5116405 Series 5117405 Series 4,194,304-word x 4-bit Dynamic RAM HITACHI ADE-203-633 C Z Rev. 3.0 Feb. 27, 1997 Description The Hitachi HM5116405 Series, 5117405 Series are CMOS dynamic RAMs organized 4,194,304-word x 4-bit. They employ the most advanced CMOS technology for high performance and low power. The


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    PDF HM5116405 HM5117405 304-word ADE-203-633 304-word 26-pin

    Untitled

    Abstract: No abstract text available
    Text: SIEMENS 8M X 32-Bit EDO-DRAM Module HYM328025S/GS-50/-60 Advanced Information • 8 388 608 words by 32-bit organization • Fast access and cycle time 50 ns access time 84 ns cycle time -50 version 60 ns access time 104 ns cycle time (-60 version) • Hyper page mode (EDO) capability


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    PDF 32-Bit HYM328025S/GS-50/-60 DD653tiS 328025S/GS-50/-60 fl235bD5 D0fl53bb

    als31c

    Abstract: No abstract text available
    Text: SIEMENS 4M X 32-Bit EDO-DRAM Module HYM 324025S/GS-50/-60 Advanced Information • 4 194 304 words by 32-bit organized SIMM modules for PC main memory applications • Fast access and cycle time 50 ns access time 84 ns cycle time -50 version 60 ns access time


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    PDF 32-Bit 324025S/GS-50/-60 324025S/GS-50) 324025S/GS-60) 0235fci05 L-SIM-72-12 111111iTTTTTTT als31c

    27C256AG

    Abstract: 671400H 4265C 514270 101AG BK 4367 4165A 5118160 4270-D 4096A
    Text: Line Up o f Hitachi IC M emories Classification Total bit 4M - SRAM- 3 .3 V r — 1M- Voltage Organization word X bit Type 512kx8- 5V - 512k x 8 - n H M 62W 8512A Series 121 H M 628512A Series - 133 H M 628512 S e r ie s . 145 — 1M x4- H M 674100H Series


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    PDF 512kx8512k 28512A 674100H 671400H 8128B 1664H 9127H 8127H 27C256AG 4265C 514270 101AG BK 4367 4165A 5118160 4270-D 4096A

    Untitled

    Abstract: No abstract text available
    Text: SIEMENS Summary of Types Summary of Types Type | Ordering | Code Package Description DRAM Page i Memory Components HYB 514100BJ-50 067100-0971 P-SOJ-26/20-5 4 M X 1,5 V, 50 ns 47 HYB514100BJ-60 067100-0759 P-SOJ-26/20-5 4 M x 1, 5 V, 60 ns 47 HYB 514100BJ-70


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    PDF P-SOJ-26/20-5