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    YAGEO Corporation SQM500JB-20K

    RES 20K OHM 5% 5W RADIAL
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    DigiKey SQM500JB-20K Bulk 2,000 1
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    YAGEO Corporation SQM500JB-3K3

    RES 3.3K OHM 5% 5W RADIAL
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    YAGEO Corporation SQM500JB-22K

    RES 22K OHM 5% 5W RADIAL
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    YAGEO Corporation SQM500JB-0R3

    RES 0.3 OHM 5% 5W RADIAL
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    YAGEO Corporation SQM500JB-18K

    RES 18K OHM 5% 5W RADIAL
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    DigiKey SQM500JB-18K Bulk 2,000 1
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    SQM5 Datasheets (161)

    Part ECAD Model Manufacturer Description Curated Type PDF
    SQM50020EL_GE3 Vishay Siliconix Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET N-CH 60V 120A TO263 Original PDF
    SQM50028EM_GE3 Vishay Siliconix Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET N-CH 60V 120A TO263-7 Original PDF
    SQM50034E_GE3 Vishay Siliconix MOSFET N-CH 60V 100A TO263 Original PDF
    SQM50034EL_GE3 Vishay Siliconix MOSFET N-CH 60V 100A TO263 Original PDF
    SQM500JB-0R1 Yageo Resistors - Through Hole Resistors - RES WW 5W 5% TH Original PDF
    SQM500JB-0R11 Yageo Resistors - Through Hole Resistors - RES WW 5W 5% TH Original PDF
    SQM500JB-0R12 Yageo Resistors - Through Hole Resistors - RES WW 5W 5% TH Original PDF
    SQM500JB-0R13 Yageo Resistors - Through Hole Resistors - RES WW 5W 5% TH Original PDF
    SQM500JB-0R15 Yageo Resistors - Through Hole Resistors - RES WW 5W 5% TH Original PDF
    SQM500JB-0R16 Yageo Resistors - Through Hole Resistors - RES WW 5W 5% TH Original PDF
    SQM500JB-0R18 Yageo Resistors - Through Hole Resistors - RES WW 5W 5% TH Original PDF
    SQM500JB-0R2 Yageo Resistors - Through Hole Resistors - RES WW 5W 5% TH Original PDF
    SQM500JB-0R22 Yageo Resistors - Through Hole Resistors - RES WW 5W 5% TH Original PDF
    SQM500JB-0R24 Yageo Resistors - Through Hole Resistors - RES WW 5W 5% TH Original PDF
    SQM500JB-0R27 Yageo Resistors - Through Hole Resistors - RES WW 5W 5% TH Original PDF
    SQM500JB-0R3 Yageo Resistors - Through Hole Resistors - RES WW 5W 5% TH Original PDF
    SQM500JB-0R33 Yageo Resistors - Through Hole Resistors - RES WW 5W 5% TH Original PDF
    SQM500JB-0R36 Yageo Resistors - Through Hole Resistors - RES WW 5W 5% TH Original PDF
    SQM500JB-0R39 Yageo Resistors - Through Hole Resistors - RES WW 5W 5% TH Original PDF
    SQM500JB-0R43 Yageo Resistors - Through Hole Resistors - RES WW 5W 5% TH Original PDF
    ...

    SQM5 Datasheets Context Search

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    Untitled

    Abstract: No abstract text available
    Text: SQM50P08-25L www.vishay.com Vishay Siliconix Automotive P-Channel 80 V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) • TrenchFET Power MOSFET - 80 RDS(on) () at VGS = - 10 V 0.025 RDS(on) () at VGS = - 4.5 V 0.031 ID (A) • Package with Low Thermal Resistance


    Original     		PDF SQM50P08-25L AEC-Q101 O-263 O-263 SQM50P08-25L-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12

    Untitled

    Abstract: No abstract text available
    Text: SQM50N04-4m0L www.vishay.com Vishay Siliconix Automotive N-Channel 40 V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) • TrenchFET Power MOSFET 40 RDS(on) () at VGS = 10 V 0.0040 RDS(on) () at VGS = 4.5 V 0.0055 ID (A) • Package with Low Thermal Resistance


    Original     		PDF SQM50N04-4m0L AEC-Q101 O-263 O-263 SQM50N04-4m0L-GE3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A

    Untitled

    Abstract: No abstract text available
    Text: SQM50N04-4m0L Vishay Siliconix Automotive N-Channel 40 V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET • Package with Low Thermal Resistance • AEC-Q101 Qualifiedd


    Original     		PDF SQM50N04-4m0L AEC-Q101 2002/95/EC O-263 O-263 SQM50N04-4m0L-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU.

    Untitled

    Abstract: No abstract text available
    Text: SQM50N04-5m0 Vishay Siliconix Automotive N-Channel 40 V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) • Halogen-free According to IEC 61249-2-21 Definition 40 RDS(on) () at VGS = 10 V 0.005 ID (A) • TrenchFET Power MOSFET 50 Configuration


    Original     		PDF SQM50N04-5m0 AEC-Q101 2002/95/EC O-263 O-263 SQM50N04-5m0-GE3 11-Mar-11

    Untitled

    Abstract: No abstract text available
    Text: SQM50P06-15L Vishay Siliconix Automotive P-Channel 60 V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) • Halogen-free According to IEC 61249-2-21 Definition - 60 RDS(on) (Ω) at VGS = - 10 V 0.015 RDS(on) (Ω) at VGS = - 4.5 V 0.022 ID (A) • TrenchFET Power MOSFET


    Original     		PDF SQM50P06-15L 2002/95/EC AEC-Q101 O-263 O-263 SQM50P06-15L-GE3 18-Jul-08

    66800

    Abstract: No abstract text available
    Text: SQM50N04-4m0L Vishay Siliconix Automotive N-Channel 40 V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET • Package with Low Thermal Resistance • AEC-Q101 Qualifiedd


    Original     		PDF SQM50N04-4m0L AEC-Q101 2002/95/EC O-263 O-263 SQM50N04-4m0L-GE3 18-Jul-08 66800

    Untitled

    Abstract: No abstract text available
    Text: SQM50P03-07_RC www.vishay.com Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter


    Original     		PDF SQM50P03-07 AN609, 3391m 4182m 6174m 3200m 2107m 25-Jul-11

    Untitled

    Abstract: No abstract text available
    Text: SQM50N04-4m1 www.vishay.com Vishay Siliconix Automotive N-Channel 40 V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) • • • • • 40 RDS(on) () at VGS = 10 V 0.0041 ID (A) 50 Configuration Single TO-263 TrenchFET Power MOSFET Package with Low Thermal Resistance


    Original     		PDF SQM50N04-4m1 O-263 AEC-Q101 SQM50N04-4m1-GE3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A

    SQM50P08-25L

    Abstract: No abstract text available
    Text: SQM50P08-25L Vishay Siliconix Automotive P-Channel 80 V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) • Halogen-free According to IEC 61249-2-21 Definition - 80 RDS(on) () at VGS = - 10 V 0.025 RDS(on) () at VGS = - 4.5 V 0.031 ID (A) • TrenchFET Power MOSFET


    Original     		PDF SQM50P08-25L AEC-Q101 2002/95/EC O-263 O-263 SQM50P08-25L-GE3 11-Mar-11 SQM50P08-25L

    67044

    Abstract: No abstract text available
    Text: SQM50P03-07 Vishay Siliconix Automotive P-Channel 30 V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) • Halogen-free According to IEC 61249-2-21 Definition - 30 RDS(on) () at VGS = - 10 V 0.0070 RDS(on) () at VGS = - 4.5 V 0.0110 ID (A) • TrenchFET Power MOSFET


    Original     		PDF SQM50P03-07 2002/95/EC AEC-Q101 O-263 O-263 SQM50P03-07-GE3 11-Mar-11 67044

    Untitled

    Abstract: No abstract text available
    Text: SQM50P04-09L www.vishay.com Vishay Siliconix Automotive P-Channel 40 V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) • TrenchFET Power MOSFET - 40 RDS(on) () at VGS = - 10 V 0.0094 RDS(on) () at VGS = - 4.5 V 0.0170 ID (A) • Package with Low Thermal Resistance


    Original     		PDF SQM50P04-09L AEC-Q101 O-263 SQM50P04-09L-GE3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A

    Untitled

    Abstract: No abstract text available
    Text: SQM50P03-07 www.vishay.com Vishay Siliconix Automotive P-Channel 30 V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) • TrenchFET Power MOSFET - 30 RDS(on) () at VGS = - 10 V 0.0070 RDS(on) () at VGS = - 4.5 V 0.0110 ID (A) • Package with Low Thermal Resistance


    Original     		PDF SQM50P03-07 AEC-Q101 O-263 SQM50P03-07-GE3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A

    Untitled

    Abstract: No abstract text available
    Text: SQM50P08-25L_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter configurations are included. When implemented in P-SPICE,


    Original     		PDF SQM50P08-25L AN609, 3391m 5891m 6174m 8832m 8418m 0033m 21-Apr-11

    Untitled

    Abstract: No abstract text available
    Text: SPICE Device Model SQM50P03-07 www.vishay.com Vishay Siliconix P-Channel 30 V D-S 175 °C MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the p-channel vertical DMOS. The sub-circuit model is extracted and optimized over the -55 °C


    Original     		PDF SQM50P03-07 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    Untitled

    Abstract: No abstract text available
    Text: SQM50N04-4m1 www.vishay.com Vishay Siliconix Automotive N-Channel 40 V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) • • • • • 40 RDS(on) () at VGS = 10 V 0.0041 ID (A) 50 Configuration Single TO-263 TrenchFET Power MOSFET Package with Low Thermal Resistance


    Original     		PDF SQM50N04-4m1 AEC-Q101 O-263 O-263 SQM50N04-4m1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12

    Untitled

    Abstract: No abstract text available
    Text: SQM50P04-09L Vishay Siliconix Automotive P-Channel 40 V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) • Halogen-free According to IEC 61249-2-21 Definition - 40 RDS(on) () at VGS = - 10 V 0.0094 RDS(on) () at VGS = - 4.5 V 0.0170 ID (A) • TrenchFET Power MOSFET


    Original     		PDF SQM50P04-09L 2002/95/EC AEC-Q101 O-263 O-263 SQM50P04-09L-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU.

    IEC 584-3

    Abstract: No abstract text available
    Text: SQM50P04-09L Vishay Siliconix Automotive P-Channel 40 V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) • Halogen-free According to IEC 61249-2-21 Definition - 40 RDS(on) () at VGS = - 10 V 0.0094 RDS(on) () at VGS = - 4.5 V 0.0170 ID (A) • TrenchFET Power MOSFET


    Original     		PDF SQM50P04-09L 2002/95/EC AEC-Q101 O-263 O-263 SQM50P04-09L-GE3 11-Mar-11 IEC 584-3

    Untitled

    Abstract: No abstract text available
    Text: SQM50N04-5m0 Vishay Siliconix Automotive N-Channel 40 V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) • Halogen-free According to IEC 61249-2-21 Definition 40 RDS(on) () at VGS = 10 V 0.005 ID (A) • TrenchFET Power MOSFET 50 Configuration


    Original     		PDF SQM50N04-5m0 AEC-Q101 2002/95/EC O-263 O-263 SQM50N04-5m0-GE3 18-Jul-08

    6703-2

    Abstract: No abstract text available
    Text: SQM50P04-09L Vishay Siliconix Automotive P-Channel 40 V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) • Halogen-free According to IEC 61249-2-21 Definition - 40 RDS(on) () at VGS = - 10 V 0.0094 RDS(on) () at VGS = - 4.5 V 0.0170 ID (A) • TrenchFET Power MOSFET


    Original     		PDF SQM50P04-09L 2002/95/EC AEC-Q101 O-263 O-263 SQM50P04-09L-GE3 18-Jul-08 6703-2

    Untitled

    Abstract: No abstract text available
    Text: SQM50P03-07 Vishay Siliconix Automotive P-Channel 30 V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) • Halogen-free According to IEC 61249-2-21 Definition - 30 RDS(on) () at VGS = - 10 V 0.0070 RDS(on) () at VGS = - 4.5 V 0.0110 ID (A) • TrenchFET Power MOSFET


    Original     		PDF SQM50P03-07 2002/95/EC AEC-Q101 O-263 O-263 SQM50P03-07-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU.

    Untitled

    Abstract: No abstract text available
    Text: SQM50P06-15L_RC www.vishay.com Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter


    Original     		PDF SQM50P06-15L AN609, 3391m 7988m 6174m 5526m 16-Jun-11

    Untitled

    Abstract: No abstract text available
    Text: SQM50P04-09L_RC www.vishay.com Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter


    Original     		PDF SQM50P04-09L AN609, 3391m 7367m 6174m 0266m 27-Jun-11

    Untitled

    Abstract: No abstract text available
    Text: SPICE Device Model SQM50P04-09L www.vishay.com Vishay Siliconix P-Channel 40 V D-S 175 °C MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the p-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C


    Original     		PDF SQM50P04-09L 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12

    Untitled

    Abstract: No abstract text available
    Text: SQM50020EL_RC www.vishay.com Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter


    Original     		PDF SQM50020EL AN609, 3391m 5878m 6174m 5054m 8946m 6876m 21-Nov-14