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    WINBOND 2301 Search Results

    WINBOND 2301 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    SER1412-301MED Coilcraft Inc General Purpose Inductor, 0.3uH, 20%, 1 Element, Ferrite-Core, SMD, 6047, HALOGEN FREE AND ROHS COMPLIANT Visit Coilcraft Inc
    SER1412-301ME Coilcraft Inc Power inductor, high current, 20% tol, SMT, RoHS, halogen-free Visit Coilcraft Inc
    SER1412-301 Coilcraft Inc Power inductor, high current, 20% tol, SMT, RoHS, halogen-free Visit Coilcraft Inc
    SER1412-301MEB Coilcraft Inc General Purpose Inductor, 0.3uH, 20%, 1 Element, Ferrite-Core, SMD, 6047, HALOGEN FREE AND ROHS COMPLIANT Visit Coilcraft Inc
    H5N2301PF-E Renesas Electronics Corporation Nch Single Power Mosfet 230V 25A 85Mohm To-3Pfm Visit Renesas Electronics Corporation

    WINBOND 2301 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: W957D6HB 128Mb Async./Burst/Sync./A/D MUX 1. GENERAL DESCRIPTION Winbond x16 ADMUX products are high-speed, CMOS pseudo-static random access memory developed for lowpower, portable applications. The device has a DRAM core organized. These devices are a variation of the industrystandard Flash control interface, with a multiplexed address/data bus. The multiplexed address and data functionality


    Original     		PDF W957D6HB 128Mb A01-004

    W958D6DBC

    Abstract: No abstract text available
    Text: W958D6DB 256Mb Async./Burst/Sync./A/D MUX 1. GENERAL DESCRIPTION Winbond x16 ADMUX products are high-speed, CMOS pseudo-static random access memory developed for lowpower, portable applications. The device has a DRAM core organized. These devices are a variation of the industrystandard Flash control interface, with a multiplexed address/data bus. The multiplexed address and data functionality


    Original     		PDF W958D6DB 256Mb A01-003 W958D6DBC

    W968D6DAG

    Abstract: No abstract text available
    Text: W968D6DA 256Mb Async./Page,Syn./Burst CellularRAM 1. GENERAL DESCRIPTION Winbond CellularRAM products are high-speed, CMOS pseudo-static random access memories developed for low-power, portable applications. The device has a DRAM core organized. These devices include an industrystandard burst mode Flash interface that dramatically increases read/write bandwidth compared with other lowpower SRAM or Pseudo SRAM offerings.


    Original     		PDF W968D6DA 256Mb A01-003 W968D6DAG

    W967d6hb

    Abstract: W967 CRAM 256mb
    Text: W967D6HB 128Mb Async./Page,Syn./Burst CellularRAM 1. GENERAL DESCRIPTION Winbond CellularRAM products are high-speed, CMOS pseudo-static random access memories developed for low-power, portable applications. The device has a DRAM core organized. These devices include an industrystandard burst mode Flash interface that dramatically increases read/write bandwidth compared with other lowpower SRAM or Pseudo SRAM offerings.


    Original     		PDF W967D6HB 128Mb A01-003 W967d6hb W967 CRAM 256mb

    Untitled

    Abstract: No abstract text available
    Text: W94AD6KB / W94AD2KB 1Gb Mobile LPDDR 1. GENERAL DESCRIPTION W94AD6KB / W94AD2KB is a high-speed Low Power double data rate synchronous dynamic random access memory LPDDR SDRAM , An access to the LPDDR SDRAM is burst oriented. Consecutive memory location in one page can be accessed at a burst length of 2, 4, 8 and 16


    Original     		PDF W94AD6KB W94AD2KB W94AD2KB A01-002

    Untitled

    Abstract: No abstract text available
    Text: W94AD6KB / W94AD2KB 1Gb Mobile LPDDR Table of Contents1. 2. 3. 4. 5. 6. 7. 8. GENERAL DESCRIPTION . 4 FEATURES . 4


    Original     		PDF W94AD6KB W94AD2KB A01-004

    Untitled

    Abstract: No abstract text available
    Text: W94AD6KB / W94AD2KB 1Gb Mobile LPDDR 1. GENERAL DESCRIPTION W94AD6KB / W94AD2KB is a high-speed Low Power double data rate synchronous dynamic random access memory LPDDR SDRAM , An access to the LPDDR SDRAM is burst oriented. Consecutive memory location in one page can be accessed at a burst length of 2, 4, 8 and 16


    Original     		PDF W94AD6KB W94AD2KB W94AD2KB A01-003

    W949D6

    Abstract: W949D6KBHX5I W949D2KB A01-001 W949D W949D2KBJX5I W949D6KBHX winbond 2301 w949d2 W949D6KB
    Text: W949D6KB / W949D2KB 512Mb Mobile LPDDR 1. GENERAL DESCRIPTION W949D6KB / W949D2KB is a high-speed Low Power double data rate synchronous dynamic random access memory LPDDR SDRAM , An access to the LPDDR SDRAM is burst oriented. Consecutive memory location in one page can be accessed at a burst length of 2, 4, 8 and 16


    Original     		PDF W949D6KB W949D2KB 512Mb W949D2KB A01-001 W949D6 W949D6KBHX5I A01-001 W949D W949D2KBJX5I W949D6KBHX winbond 2301 w949d2

    W94AD6KBHX5I

    Abstract: W94AD6KBHX5E W94AD6KB W94AD2KBJX5E W94AD2KB W94AD2KBJX5I
    Text: PRELIMINARY W94AD6KB / W94AD2KB 1Gb Mobile LPDDR 1. GENERAL DESCRIPTION W94AD6KB / W94AD2KB is a high-speed Low Power double data rate synchronous dynamic random access memory LPDDR SDRAM , An access to the LPDDR SDRAM is burst oriented. Consecutive memory location in one page can be accessed at a burst length of 2, 4, 8 and 16


    Original     		PDF W94AD6KB W94AD2KB W94AD2KB P01-002 W94AD6KBHX5I W94AD6KBHX5E W94AD2KBJX5E W94AD2KBJX5I

    Untitled

    Abstract: No abstract text available
    Text: W949D6DB / W949D2DB 512Mb Mobile LPDDR Table of Contents1. GENERAL DESCRIPTION . 4 2. FEATURES . 4


    Original     		PDF W949D6DB W949D2DB 512Mb A01-001

    w949d6cbh

    Abstract: WINBOND cross reference W949D6CB winbond Mobile LPDDR W949D6CBHX5E winbond W949D6CB W949D6
    Text: W949D6CB / W949D2CB 512Mb Mobile LPDDR TABLE OF CONTENTS 1. GENERAL DESCRIPTION . 4 2. FEATURES . 4


    Original     		PDF W949D6CB W949D2CB 512Mb A01-006 w949d6cbh WINBOND cross reference winbond Mobile LPDDR W949D6CBHX5E winbond W949D6CB W949D6

    W948D6FBHX5I

    Abstract: 60VFBGA W948D6FBHX W948D6FBHX6I W948D6FBHX-6E
    Text: W948D6FB / W948D2FB 256Mb Mobile LPDDR TABLE OF CONTENTS 1. GENERAL DESCRIPTION . 4 2. FEATURES. 4


    Original     		PDF W948D6FB W948D2FB 256Mb A01-004 W948D6FBHX5I 60VFBGA W948D6FBHX W948D6FBHX6I W948D6FBHX-6E

    W947D6HBHX6E

    Abstract: W947D6HBHX-6E W947D6HB W947 winbond Mobile LPDDR
    Text: W947D6HB / W947D2HB 128Mb Mobile LPDDR TABLE OF CONTENTS 1. GENERAL DESCRIPTION . 4 2. FEATURES. 4


    Original     		PDF W947D6HB W947D2HB 128Mb A01-003 W947D6HBHX6E W947D6HBHX-6E W947 winbond Mobile LPDDR

    w949d6cbh

    Abstract: A01-007 winbond W949D6CB W949D2CBJX WINBOND cross reference winbond 2301
    Text: W949D6CB / W949D2CB 512Mb Mobile LPDDR TABLE OF CONTENTS 1. GENERAL DESCRIPTION . 4 2. FEATURES . 4


    Original     		PDF W949D6CB W949D2CB 512Mb A01-007 w949d6cbh A01-007 winbond W949D6CB W949D2CBJX WINBOND cross reference winbond 2301

    vt1631

    Abstract: 8375X intel g31 motherboard repair gigabyte g31 MOTHERBOARD SERVICE MANUAL CB-1410 A1 SERVICE MANUAL tv mitsubishi ct 29 b4 est fujitsu fpcap full Socket-462 lg r40 MOTHERBOARD CIRCUIT diagram via vt8235
    Text: SERVICE MANUAL FOR 8375X BY: Ally.Yuan Repair Technology Research Department /EDVD Feb.2004 8375X N/B Maintenance CONTENTS 1. Hardware Engineering Specification …………………………………………………………………… 4 1.1 Introduction ……………………………………………………………………………………………………………. 4


    Original     		PDF 8375X 8375X KN400A VT8235 W83L950D VT1631 VT6307L intel g31 motherboard repair gigabyte g31 MOTHERBOARD SERVICE MANUAL CB-1410 A1 SERVICE MANUAL tv mitsubishi ct 29 b4 est fujitsu fpcap full Socket-462 lg r40 MOTHERBOARD CIRCUIT diagram via vt8235

    BCR100

    Abstract: No abstract text available
    Text: 70 128Mb/64Mb Async/Page/Burst CellularRAM 1.5 Memory Figure 1: Features • Single device supports asynchronous, page, and burst operations • VCC, VCCQ voltages: 1.7V–1.95V VCC 1.7V–1.95V VCCQ • Random access time: 70ns • Burst mode READ and WRITE access:


    Original     		PDF 128Mb/64Mb 09005aef81d721fb pdf/09005aef81d72262 BCR100

    MT46H64M16LF

    Abstract: No abstract text available
    Text: Advance‡ 1Gb: x16, x32 Mobile DDR SDRAM Features Mobile DDR SDRAM MT46H64M16LF – 16 Meg x 16 x 4 banks MT46H32M32LF – 8 Meg x 32 x 4 banks For the latest data sheet, refer to Micron’s Web site: www.micron.com Features • • • • Table 2: Endur-IC technology


    Original     		PDF MT46H64M16LF MT46H32M32LF 09005aef82846a0b/Source: 09005aef828c2f8f MT46H64M16LF

    Untitled

    Abstract: No abstract text available
    Text: Advance‡ 128Mb: x16, x32 Mobile DDR SDRAM Features Mobile DDR SDRAM MT46H8M16LF – 2 Meg x 16 x 4 banks MT46H4M32LF – 1 Meg x 32 x 4 banks Features Options • VDD/VDDQ = 1.70–1.95V • Bidirectional data strobe per byte of data DQS • Internal, pipelined double data rate (DDR)


    Original     		PDF 128Mb: MT46H8M16LF MT46H4M32LF 09005aef82ce3074/Source: 09005aef82ce20c9

    Untitled

    Abstract: No abstract text available
    Text: 512Mb: x16, x32 Mobile DDR SDRAM Features Mobile DDR SDRAM MT46H32M16LF – 8 Meg x 16 x 4 banks MT46H16M32LF – 4 Meg x 32 x 4 banks Features Options • • • • • VDD/VDDQ – 1.8V/1.8V – 1.8V/1.2V1 • Configuration – 32 Meg x 16 8 Meg x 16 x 4 banks


    Original     		PDF 512Mb: MT46H32M16LF MT46H16M32LF 09005aef82d5d305/Source: 09005aef82d5d2e7

    Untitled

    Abstract: No abstract text available
    Text: 512Mb: x16, x32 Mobile DDR SDRAM Features Mobile DDR SDRAM MT46H32M16LF – 8 Meg x 16 x 4 banks MT46H16M32LF – 4 Meg x 32 x 4 banks Features Options • VDD/VDDQ = 1.70–1.95V • Bidirectional data strobe per byte of data DQS • Internal, pipelined double data rate (DDR)


    Original     		PDF 512Mb: MT46H32M16LF MT46H16M32LF 09005aef82ce3074/Source: 09005aef82ce20c9

    MT46H16M32

    Abstract: No abstract text available
    Text: 512Mb: x16, x32 Mobile DDR SDRAM Features Mobile DDR SDRAM MT46H32M16LF – 8 Meg x 16 x 4 banks MT46H16M32LF – 4 Meg x 32 x 4 banks Features Options • VDD/VDDQ = 1.70–1.95V • Bidirectional data strobe per byte of data DQS • Internal, pipelined double data rate (DDR)


    Original     		PDF 512Mb: MT46H32M16LF MT46H16M32LF 09005aef82ce3074/Source: 09005aef82ce20c9 MT46H16M32

    MT46H64M16LF

    Abstract: No abstract text available
    Text: 1Gb: x16, x32 Mobile DDR SDRAM Features Mobile DDR SDRAM MT46H64M16LF – 16 Meg x 16 x 4 banks MT46H32M32LF – 8 Meg x 32 x 4 banks Features Options continued • VDD/VDDQ = 1.70–1.95V • Bidirectional data strobe per byte of data (DQS) • Internal, pipelined double data rate (DDR)


    Original     		PDF MT46H64M16LF MT46H32M32LF 09005aef82ce3074/Source: 09005aef82cd0158 MT46H64M16LF

    elpida lpddr2

    Abstract: samsung* lpddr2 Elpida LPDDR2 Memory lpddr2 samsung lpddr2 MT46H16M16LF MT46H8M32LF sac105 micron LPDDR2 X32 elpida memory lpddr2
    Text: 256Mb: x16, x32 Mobile LPDDR SDRAM Features Mobile Low-Power DDR SDRAM MT46H16M16LF – 4 Meg x 16 x 4 Banks MT46H8M32LF – 2 Meg x 32 x 4 Banks Features Options • VDD/VDDQ – 1.8V/1.8V • Configuration – 16 Meg x 16 4 Meg x 16 x 4 banks – 8 Meg x 32 (2 Meg x 32 x 4 banks)


    Original     		PDF 256Mb: MT46H16M16LF MT46H8M32LF 60-ball 90-ball 09005aef834bf85b elpida lpddr2 samsung* lpddr2 Elpida LPDDR2 Memory lpddr2 samsung lpddr2 MT46H16M16LF MT46H8M32LF sac105 micron LPDDR2 X32 elpida memory lpddr2

    A2601

    Abstract: No abstract text available
    Text: 256Mb: x16, x32 Mobile LPDDR SDRAM Features Mobile LPDDR SDRAM MT46H16M16LF – 4 Meg x 16 x 4 banks MT46H8M32LF – 2 Meg x 32 x 4 banks Features Options • Vdd/Vddq = 1.70–1.95V • Bidirectional data strobe per byte of data DQS • Internal, pipelined double data rate (DDR)


    Original     		PDF 256Mb: MT46H16M16LF MT46H8M32LF 09005aef834bf85b/Source: 09005aef833c0404 A2601