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    Banner Engineering Corp HLS27DWGRYB5-990C24

    LED Lighting Bars & Strips HLS27 Hazardous Location Multicolor Strip Light; Length: 990 mm; Voltage: 24 V dc; Environmental Rating: IP66; IP67; Colors: White, Green, Red, Yellow, Blue; 2 m (6.5 ft) ITC-ER 4-wire Cable
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Mouser Electronics HLS27DWGRYB5-990C24
    • 1 $903
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    WG 599 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    CPI twt

    Abstract: twt 100 GHz diode wg 599 Ka-band
    Text: The VTA-6430A Series are a 500W CW Coupled-Cavity Traveling-Wave Tube covering 28.35-31.00 GHz Ka-Band with 1 GHz Instantanous bandwidth, Periodic-Permanent-Magnet Focused, WG-28 (compatible with UG-599/U) Waveguide Input, WG-28 (compatible with UG-599/U) Waveguide Output, and


    Original     		PDF VTA-6430A WG-28 UG-599/U) VTA-64390A1 4CW50 CPI twt twt 100 GHz diode wg 599 Ka-band

    0 130 821 074

    Abstract: wg 252 WG 6340 3570 1210 123 18X48 Jamicon 6800 35v jamicon wl
    Text: RADIAL TYPE WL Low Impedance, Miniature Sized Series TX WL WG • Smaller case sizes than WG series. • Lower impedance at high frequency and high ripple current. • Suitable for output of Motherboard and Switching power supplies. SPECIFICATION Item Characteristic


    Original     		PDF 105oC 50VDC 120Hz 18x50 0 130 821 074 wg 252 WG 6340 3570 1210 123 18X48 Jamicon 6800 35v jamicon wl

    wr15 waveguide

    Abstract: WR-03 wr06 waveguide 67B-009 74002 74004 74005 WR15 67B-006 67B-010
    Text: Fixed Attenuators 18 - 325 GHz 3 WG 109 Series V2.00 Features ● ● ● Low and High Power Full Waveguide Bandwidths Minimum VSWR Description This series of attenuators provides an inexpensive method of making measurements in fixed frequency laboratory or production test set-ups. Fixed attenuators


    Original     		PDF WR-42 WR-28 WR-22 67B-006 WR-19 67B-007 WR-15 67B-008 WR-12 67B-009 wr15 waveguide WR-03 wr06 waveguide 74002 74004 74005 WR15 67B-010

    FHR02X

    Abstract: FHX02X GaAs FET HEMT Chips
    Text: FHR02X GaAs FET & HEMT Chips FEATURES • • • • Low Noise Figure: 1.0dB Typ. @f=18GHz High Associated Gain: 9.0dB (Typ.)@f=18GHz Lg ≤ 0.25µm, Wg = 200µm Gold Gate Metallization for High Reliability DESCRIPTION The FHX02X is a High Electron Mobility Transistor(HEMT)


    Original     		PDF FHR02X 18GHz FHX02X 4-22GHz FHR02X GaAs FET HEMT Chips

    transistor 1345

    Abstract: FHR02X FHX02X GaAs FET HEMT Chips
    Text: FHR02X GaAs FET & HEMT Chips FEATURES • • • • Low Noise Figure: 1.0dB Typ. @f=18GHz High Associated Gain: 9.0dB (Typ.)@f=18GHz Lg ² 0.25µm, Wg = 200µm Gold Gate Metallization for High Reliability DESCRIPTION The FHX02X is a High Electron Mobility Transistor(HEMT)


    Original     		PDF FHR02X 18GHz FHX02X 4-22GHz FCSI0598M200 transistor 1345 FHR02X GaAs FET HEMT Chips

    FHX02X

    Abstract: GaAs FET HEMT Chips FHR02X transistor hemt
    Text: FHR02X GaAs FET & HEMT Chips FEATURES • • • • Low Noise Figure: 1.0dB Typ. @f=18GHz High Associated Gain: 9.0dB (Typ.)@f=18GHz Lg ≤ 0.25µm, Wg = 200µm Gold Gate Metallization for High Reliability DESCRIPTION The FHX02X is a High Electron Mobility Transistor(HEMT)


    Original     		PDF FHR02X 18GHz FHX02X 4-22GHz GaAs FET HEMT Chips FHR02X transistor hemt

    FHX45X

    Abstract: high power FET transistor s-parameters high frequency transistor ga as fet S2101 fujitsu hemt
    Text: FHX45X GaAs FET & HEMT Chips FEATURES • • • • Low Noise Figure: 0.55dB Typ. @f=12GHz High Associated Gain: 12.0dB (Typ.)@f=12GHz Lg ≤ 0.15µm, Wg = 280µm Gold Gate Metallization for High Reliability Drain DESCRIPTION Gate The FHX45X is a Super High Electron Mobility Transistor


    Original     		PDF FHX45X 12GHz FHX45X 2-18GHz high power FET transistor s-parameters high frequency transistor ga as fet S2101 fujitsu hemt

    GaAs FET HEMT Chips

    Abstract: No abstract text available
    Text: FHR02X GaAs FET & HEMT Chips FEATURES • • • • Low Noise Figure: 1.0dB Typ. @f=18GHz High Associated Gain: 9.0dB (Typ.)@f=18GHz Lg ² 0.25µm, Wg = 200µm Gold Gate Metallization for High Reliability DESCRIPTION The FHX02X is a High Electron Mobility Transistor(HEMT)


    Original     		PDF FHR02X 18GHz FHX02X 4-22GHz FCSI0598M200 GaAs FET HEMT Chips

    high power FET transistor s-parameters

    Abstract: FHR02X FHX02X GaAs FET HEMT Chips fujitsu hemt GaAs FET chip
    Text: FHR02X GaAs FET & HEMT Chips FEATURES • • • • Low Noise Figure: 1.0dB Typ. @f=18GHz High Associated Gain: 9.0dB (Typ.)@f=18GHz Lg ≤ 0.25µm, Wg = 200µm Gold Gate Metallization for High Reliability DESCRIPTION The FHX02X is a High Electron Mobility Transistor(HEMT)


    Original     		PDF FHR02X 18GHz FHX02X 4-22GHz FCSI0598M200 high power FET transistor s-parameters FHR02X GaAs FET HEMT Chips fujitsu hemt GaAs FET chip

    eudyna GaAs FET RF Transistor

    Abstract: high frequency transistor ga as fet transistor on 4959 eudyna fet
    Text: FHX45X GaAs FET & HEMT Chips FEATURES • • • • Low Noise Figure: 0.55dB Typ. @f=12GHz High Associated Gain: 12.0dB (Typ.)@f=12GHz Lg ≤ 0.15µm, Wg = 280µm Gold Gate Metallization for High Reliability Drain DESCRIPTION Gate The FHX45X is a Super High Electron Mobility Transistor


    Original     		PDF FHX45X 12GHz FHX45X 2-18GHz eudyna GaAs FET RF Transistor high frequency transistor ga as fet transistor on 4959 eudyna fet

    eudyna GaAs FET RF Transistor

    Abstract: No abstract text available
    Text: FHX13X, FHX14X GaAs FET & HEMT Chips FEATURES • • • • Low Noise Figure: 0.45dB Typ. @f=12GHz (FHX13) High Associated Gain: 13.0dB (Typ.)@f=12GHz Lg ≤ 0.15µm, Wg = 200µm Gold Gate Metallization for High Reliability DESCRIPTION The FHX13X, FHX14X are Super High Electron Mobility Transistor


    Original     		PDF FHX13X, FHX14X 12GHz FHX13) 12GHz FHX14X 2-18GHz eudyna GaAs FET RF Transistor

    Untitled

    Abstract: No abstract text available
    Text: A߀ Double Balanced Mixers 18-40 GHz 5 WG 790 Series Features • ■ ■ ■ ■ Broad Bandwidth Planar C onstruction Beam Lead Diodes High Reliability Small and Lightweight Description These m ixers are broadband, double-balanced dow nconverters utiliz­


    OCR Scan     		PDF IL-F-3922/68-002 599/U IL-F-39000/3B-088 1586/U IL-F-3922/54-00IM 595/U

    GaAs Gunn Diode "94 GHz"

    Abstract: gunn diode radar 10 GHz gunn diode
    Text: AjfetXm Electronically Tuned Gunn Oscillators 18-140 GHz 6 WG V Series 6-42V & 6-28V Features • ■ ■ ■ ■ ■ ■ Series GaAs or InP Electronic Tuning to 4 GHz Excellent Linearity O utput Power to 200 mW Small and Lightweight Optional Mechanical Tuning


    OCR Scan     		PDF

    3-42-102

    Abstract: 220325 30.4-112 31-0102 303-102
    Text: Variable Attenuators and Phase Shifters 18-325 GHz 3 WG 103/112 Series Dial Variable Phase Shifter Features • ■ ■ ■ 0 ‘ -180" Phase Shift Accurate Repeatability Minimum Insertion Loss Frequency C alibration Available Description Variable w aveguide phase shifters provide a sim ple and con­


    OCR Scan     		PDF provided-08-103-XX 3-06-103-XX WR-42 WR-28 WR-22 WR-08 WR-06 WR-05 WR-04 WR-03 3-42-102 220325 30.4-112 31-0102 303-102

    diode wg 599

    Abstract: WR-22 8 GHz waveguide circulator 710232 WR22 RF CIRCULATOR
    Text: SPST and SPDT PIN Diode Switches 18-110 GHz 7 WG 231/232 Series SMA FEMALE Features • ■ ■ ■ ■ Low Loss High Isolation Fast Switching Compact Package Optional Integral Driver T i B Description This series of SPST and SPDT PIN diode switches is available in seven


    OCR Scan     		PDF WR-42 WR-28 WR-22 WR-19 WR-15 WR-12 WR-10 diode wg 599 8 GHz waveguide circulator 710232 WR22 RF CIRCULATOR

    MIL-F-3922/54-003

    Abstract: No abstract text available
    Text: 3-Port Waveguide Junction Circulators & Isolators 18-110 GHz 2 WG 400 Series Features • ■ ■ ■ ■ 20 dB Isolation Typical Full Waveguide Bandwidth Low Insertion Loss 3 GHz RF Bandwidth -30°C to +70°C Operating Temperature Description These junction circulators are 3-port modified Y-junction ferrite


    OCR Scan     		PDF 2-42-700-XX 2-28-700-XX 2-22-700-XX 2-19-700-XX 2-15-700-XX 2-12-700-XX 2-10-700-XX 2-42-400-XX 2-28-400-XX 2-22-400-XX MIL-F-3922/54-003

    74002

    Abstract: 74004 WR-19 WR22
    Text: Fixed Attenuators 18-325 GHz 3 WG 109 Series Features • Low and High Power ■ Full Waveguide Bandwidths ■ Minimum VSWR c in— Description = c ■ — — n « — \ This series of attenuators provides an inexpensive method of making measurements in fixed frequency laboratory or produc­


    OCR Scan     		PDF WR-42 WR-28 WR-22 WR-19 WR-15 WR-12 WR-10 WR-08 WR-06 WR-05 74002 74004 WR22

    8 GHz waveguide circulator

    Abstract: 2-28-400 waveguide isolator high power waveguide isolators RF CIRCULATOR
    Text: M an A M P com pany 3-Port Waveguide Junction Circulators & Isolators 1 8 - 1 1 0 GHz 2 WG 400 Series V2.00 Features • -30°C to +70°C O perating Tem perature • Low Insertion Loss Description These junction circulators are 3-port m odified Y-junction


    OCR Scan     		PDF WR-42 WR-28 WR-22 WR-19 WR-15 WR-12 WR-10 8 GHz waveguide circulator 2-28-400 waveguide isolator high power waveguide isolators RF CIRCULATOR

    Untitled

    Abstract: No abstract text available
    Text: Aftœ m Pulsed Gunn Oscillators 18-60 GHz 6 WG P Series Features Environmental • Small and Lightweight ■ Peak Output Power to SOOmW ■ Fast Rise Time These devices are designed to meet the following conditions: Description Temperature Cycle Test The high output power, excellent frequency and power stability of


    OCR Scan     		PDF

    x band diode detector waveguide

    Abstract: No abstract text available
    Text: jyfat Zero Biased Waveguide Detectors 18-110 GHz 4 WG 720 Series Features • ■ ■ ■ ■ High O u tp u t Sensitivity Full Bandwidth Coverage Beam Lead Diodes High Reliability C om pact Package o (0 )o € Description These zero biased dete cto rs are lo w cost units available in seven bands


    OCR Scan     		PDF

    Untitled

    Abstract: No abstract text available
    Text: M foi Mechanically Tuned Gunn Oscillators 6 WG M Series 18-140 GHz Features • ■ ■ ■ ■ ■ ■ ■ 6-42M & 6-28M Seríes GaAs o r InP Excellent Frequency Stability High O u tp u t Power L o w AM and FM Noise Small and Lightweight Standard and Broadband Tuning


    OCR Scan     		PDF 6-42M 6-28M 595/U 599/U 67B-006 383/U 67B-007 383/U WR-15 67B-008

    NEC D 809 F

    Abstract: NEC D 809 L transistor NEC D 986 E7138
    Text: DATA SHEET GaAs MES FET NE713 L to Ku BAND LOW NOISE AMPLIFIER N-CHANNEL GaAs MES FET FEATURES • Low noise figure NF = 0.6 dB TYP. a tf = 4G H z • High associated gain Ga = 14 dB TYP. a tf = 4 GHz • Gate width: Wg = 280 ^¡m • Gate Length: Lg = 0.3 ßm


    OCR Scan     		PDF NE713 E71383B NE71383B] NE71300] NEC D 809 F NEC D 809 L transistor NEC D 986 E7138

    NEC D 809 F

    Abstract: NEC D 809 71383B NEC D 809 k
    Text: DATA SHEET GaAs MES FET NE713 L to Ku BAND LOW NOISE AMPLIFIER N-CHANNEL GaAs MES FET FEATURES • Low noise figure NF = 0.6 dB TYP. at f = 4 GHz • High associated gain Ga = 14 dB TYP. a t f = 4 G H z • Gate width: Wg = 280 fim • Gate Length: Lg = 0.3 /xm


    OCR Scan     		PDF NE713 NE71300-N NE71300-M NE71300-L NE71383B NE71383B] NE71300] NEC D 809 F NEC D 809 71383B NEC D 809 k

    303-102

    Abstract: No abstract text available
    Text: M an AMP com pany Variable Attenuators and Phase Shifters 18 - 325 GHz 3 WG 103/112 Series V2.00 Dial Variable Phase Shifter Features • 0 ° - 1 8 0 ° P h a se S h i t • Accurate Repeatability • M inin um Insertion L o ss • F req u en cy Calibration A vailable


    OCR Scan     		PDF WR-42 WR-28 WR-22 WR-19 WR-15 WR-12 WR-10 WR-08 WR-06 WR-05 303-102