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    WAFER FAB CONTROL Search Results

    WAFER FAB CONTROL Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    SSM6J808R Toshiba Electronic Devices & Storage Corporation MOSFET, P-ch, -40 V, -7 A, 0.035 Ohm@10V, TSOP6F, AEC-Q101 Visit Toshiba Electronic Devices & Storage Corporation
    SSM6K819R Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 100 V, 10 A, 0.0258 Ohm@10V, TSOP6F, AEC-Q101 Visit Toshiba Electronic Devices & Storage Corporation
    SSM6K809R Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 60 V, 6.0 A, 0.036 Ohm@10V, TSOP6F, AEC-Q101 Visit Toshiba Electronic Devices & Storage Corporation
    SSM6K504NU Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 30 V, 9.0 A, 0.0195 Ohm@10V, UDFN6B, AEC-Q101 Visit Toshiba Electronic Devices & Storage Corporation
    SSM3K361R Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 100 V, 3.5 A, 0.069 Ohm@10V, SOT-23F, AEC-Q101 Visit Toshiba Electronic Devices & Storage Corporation

    WAFER FAB CONTROL Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    photolithography

    Abstract: No abstract text available
    Text: Wafer Fab Capability Wafer Loading: Automated wafer loading throughout the Fab prevents handling-induced mechanical damage. Ion Implant: State-of-the-art high current implanter capable of the full range of dose requirements. Wafer Cleaning: Semi-automated wafer


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    AMS130-2 150mm ISO9000 QS9000 photolithography PDF

    TGC3000

    Abstract: wafer fab control plan ASIC TGC2000 Qual wafer fab control TEXAS INSTRUMENTS, die attach TGB2000 F642790
    Text: ASIC QRA / PROCESS & PACKAGE QUAL METHODOLOGY Design Libraries Specs Qual Cycle Time “GENERIC” QUALIFICATION Die Sizes Package Pincounts & Types Assembly Locations Wafer Fab Locations Wafer Fab Processes Texas Instruments - ASIC CQE Qual By Similarity


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    Ablebond 84-1*SR4

    Abstract: z9925 EIAJ ED-4701 MARK A48 857L TSMC 0.35um Volt, SPDM, CMOS 98068A 0.6 um cmos process ablebond 84-1lmisr4
    Text: Reliability Summary Report PI6CV857A August 28, 2002 Reliability by Design Page 1 of 20 INDEX: Commitment to Quality: Page 3 Product Family and Wafer Fab Process: Page 4 Wafer Fab Subcontractors and Codes: Page 4 Standard Package Type Code and Dimensions:


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    PI6CV857A Ablebond 84-1*SR4 z9925 EIAJ ED-4701 MARK A48 857L TSMC 0.35um Volt, SPDM, CMOS 98068A 0.6 um cmos process ablebond 84-1lmisr4 PDF

    TSMC 0.35um

    Abstract: ED-4701-3-B122A tsmc 0.35 um CMOS gate area PBGA 256 reflow profile Volt, SPDM, CMOS ED-4701-1-C111A ISO-9000 PI7C7300 PI7C8150-33 PI7C8152
    Text: Reliability Summary Report PCI Bridge Products March 20, 2003 Updated Total Life Test Hours Reliability by Design Page 1 of 16 INDEX: Commitment to Quality: Page 3 Product Family and Wafer Fab Process: Page 4 Wafer Fab Subcontractors and Codes: Page 4 Standard Package Type Code and Dimensions:


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    Precon

    Abstract: 857916 ACT245 EN-4088Z SN74ACT245N EPIC-1S
    Text: TEXAS INSTRUMENTS Final Notification for the 150mm Diameter Wafer Qualification of the Sherman, Texas Wafer Fab February 19, 1999 Abstract The Texas Instruments Wafer Fabrication Facility in Sherman, Texas SFAB has completed the qualification to convert the wafer diameter from 125mm to 150mm for the EPIC-1S wafer fabrication


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    150mm 125mm DiH20Rn 260deg Precon 857916 ACT245 EN-4088Z SN74ACT245N EPIC-1S PDF

    EPIC-1S

    Abstract: WAFER SN74ACT245 wafer fab control plan
    Text: TEXAS INSTRUMENTS Initial Notification for the Planned 150mm Diameter Wafer Qualification of the Sherman, Texas Wafer Fab December 8, 1998 Abstract The Texas Instruments Wafer Fabrication Facility in Sherman, Texas SFAB plans to convert the wafer diameter from 125mm to 150mm for the EPIC-1S wafer fabrication technology. The product


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    150mm 125mm SN74ACT245 60sec EPIC-1S WAFER wafer fab control plan PDF

    508 531 02 48

    Abstract: SN74ABT2245
    Text: TEXAS INSTRUMENTS Final Notification for the 200mm Diameter Wafer Qualification of the Freising, Germany Wafer Fab June 27, 1997 Abstract As previously notified in May by PCN 5300, the Texas Instruments Wafer Fabrication Facility in Freising, Germany FFAB has qualified the convertion of the wafer diameter from 150mm to 200mm


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    200mm 150mm 200mm 150mm, 508 531 02 48 SN74ABT2245 PDF

    CARSEM

    Abstract: 225E-01 0.5um ICC03290 MP8000C 84-1-lmis-r4 tsmc cmos model tsmc Activation Energy HRS100
    Text: Reliability Engineering Tucson Corporation Analytical Services Qualification Description: Qualify new model. Model: RA: PA: Date: Die Name: Die Size: Mask Revision: Wafer Fab Site: Process: Technology: Metal 1: Metal 2: Metal 3: Passivation: HTOL assem/wafer/lot :


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    TMP121AIDBV ICC03290 CARSEM 225E-01 0.5um ICC03290 MP8000C 84-1-lmis-r4 tsmc cmos model tsmc Activation Energy HRS100 PDF

    triac phase control motor

    Abstract: versatile power supply applications U211B triac control pir sensor 3-phase motor triac DC permanent magnet motors Phase Control Circuit for Industrial Applications zero crossing switch Industrial DC Motor U211B
    Text: TEMIC Semiconductors Industrial Segment Battery Charge Phase Control Identification Zero Crossing Switches Industrial S More than 15 years of industrial expertise S State-of-the-art wafer fab and packaging facilities S Rugged 30 V and high-density 16 V technology


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    U217B U2102B triac phase control motor versatile power supply applications U211B triac control pir sensor 3-phase motor triac DC permanent magnet motors Phase Control Circuit for Industrial Applications zero crossing switch Industrial DC Motor U211B PDF

    mems

    Abstract: biomedical medical mems
    Text: Investor Contacts: Geraldine Hench Vice President - Finance 408 432-8888 For Immediate Release Michele Katz/Michael Polyviou/ Elric Martinez Morgen-Walke Associates 212-850-5600 XICOR SIGNS DEFINITIVE AGREEMENT WITH STANDARD MEMS TO SELL MILPITAS WAFER FAB


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    toshiba mcp nand

    Abstract: toshiba mcp GBNAND 2Gb NAND FLASH Toshiba MEP core MCP Technology Trend toshiba psram MCP 1Gb toshiba 512Mb TOSHIBA flash memory -NAND sd controller
    Text: EYE 07 July 2006 TOSHIBA SEMICONDUCTOR BULLETIN EYE VOLUME 168 CONTENTS INFORMATION Kaga Toshiba to Build New 200mm Wafer-based Production Fab 2 Toshiba and ARC Collaborate to Grow Industry Adoption of Configurable Processor Technology Worldwide .3


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    200mm toshiba mcp nand toshiba mcp GBNAND 2Gb NAND FLASH Toshiba MEP core MCP Technology Trend toshiba psram MCP 1Gb toshiba 512Mb TOSHIBA flash memory -NAND sd controller PDF

    MS-6G

    Abstract: ms-7g sa5522 SUMITOMO g600f W83303D w99682bcdg W55U01-A2 ms 6g w89c35d g600f
    Text: PCN No.: Z200-PCN-PA20070101 Date: Jan.-10-2007. Change Title: Upgrade molding compound for LQFP Family series at Greatek. Change Classification: Major Minor Change item: Design Raw Material Wafer FAB Package Assembly Testing Others: . Affected Product s :


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    Z200-PCN-PA20070101 14X20MM 14X14MM G600F) 48LQFP SB5627 W6694ACD SB5627001 MS-6G ms-7g sa5522 SUMITOMO g600f W83303D w99682bcdg W55U01-A2 ms 6g w89c35d g600f PDF

    Zener Diode SOT-23 929b

    Abstract: 13.8 8w zener diode zener diode t5 MMSZ4V7T1 MOTOROLA 929B 953b X2 diode zener zener diode T3 Marking diodes zener de 3.5 volts 938B
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA GENERAL DATA 225 mW SOT-23 Zener Voltage Regulator Diodes 225 mW SOT-23 GENERAL DATA APPLICABLE TO ALL SERIES IN THIS GROUP Zener Voltage Regulator Diodes 3 Cathode Manufacturing Locations: 1 Anode WAFER FAB: Phoenix, Arizona


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    OT-23 03A-03 Zener Diode SOT-23 929b 13.8 8w zener diode zener diode t5 MMSZ4V7T1 MOTOROLA 929B 953b X2 diode zener zener diode T3 Marking diodes zener de 3.5 volts 938B PDF

    SOT-23 marking 77

    Abstract: SOT-23 marking Z1 zener y21 zener y11 BZX84C2V4LT1 BZX84C2V7LT1 BZX84C3V0LT1 BZX84C3V3LT1 BZX84C30LT1 motorola BZX84C3V9LT1
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA BZX84C2V4LT1 SERIES 225 mW SOT-23 Zener Voltage Regulator Diodes 225 mW SOT-23 GENERAL DATA APPLICABLE TO ALL SERIES IN THIS GROUP Zener Voltage Regulator Diodes 3 Cathode Manufacturing Locations: 1 Anode WAFER FAB: Phoenix, Arizona


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    BZX84C2V4LT1 OT-23 OT-23 SOT-23 marking 77 SOT-23 marking Z1 zener y21 zener y11 BZX84C2V4LT1 BZX84C2V7LT1 BZX84C3V0LT1 BZX84C3V3LT1 BZX84C30LT1 motorola BZX84C3V9LT1 PDF

    biomedical

    Abstract: biomedical sensors mems
    Text: Investor Contacts: Geraldine Hench Vice President - Finance 408 432-8888 For Immediate Release Michele Katz/Michael Polyviou/ Elric Martinez Morgen-Walke Associates 212-850-5600 XICOR COMPLETES SALE OF MILPITAS WAFER FAB TO STANDARD MEMS * Xicor now a fabless semiconductor company


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    Y1 SOT-23

    Abstract: 338 sot-23 SOT-23 marking 77 y6 sot-23 BZX84C12LT1 SOT-23 marking y1 z7 sot-23 marking 638 sot-23 marking Z2 sot23 Z16 SOT23
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA GENERAL DATA 225 mW SOT-23 Zener Voltage Regulator Diodes 225 mW SOT-23 GENERAL DATA APPLICABLE TO ALL SERIES IN THIS GROUP Zener Voltage Regulator Diodes 3 Cathode Manufacturing Locations: 1 Anode WAFER FAB: Phoenix, Arizona


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    OT-23 OT-23 Y1 SOT-23 338 sot-23 SOT-23 marking 77 y6 sot-23 BZX84C12LT1 SOT-23 marking y1 z7 sot-23 marking 638 sot-23 marking Z2 sot23 Z16 SOT23 PDF

    Untitled

    Abstract: No abstract text available
    Text: For Immediate Release CYPRESS EXPANDS MINNESOTA WAFER FAB TO MEET INCREASING DEMAND Ramp Of 0.21- and 0.16-Micron Lines, Addition of 150 People Geared to Double Capacity, Boost Revenues Beyond $1 Billion Mark BLOOMINGTON, Minnesota…February 25, 2000 - Cypress Semiconductor Minnesota Inc. CMI


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    16-Micron PDF

    plc siemens

    Abstract: tyne
    Text: Manufacturing Welcome to North Tyneside Siemens’ long-term strategy of globalizing semiconductor production will reach a new milestone on May 23 with the royal opening of its £1.1 billion wafer fab near Newcastle-upon-Tyne in northeast England. lobalization in the semiconductor


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    320F2812PGFA

    Abstract: tms dsp 320F2812PGFA 320f2811pbka 320F2810PBKA TI TMS F2812 ti part naming convention TMS320F281x TMS320F2812 CC BGA 320F2811PBKQ 1833c05
    Text: 12500 TI Boulevard, MS 8640, Dallas, Texas 75243 PCN# 20040226002 Title: TMS320F281X Digital Controller Additional Wafer Fab and Silicon Revision Change Final Change Notification / Sample Request Dear Customer: This is an initial announcement of change to a device that is currently offered by Texas Instruments. The


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    TMS320F281X 320F2811PBKA 320F2811PBKS 320F2811PBKQ 320F2812PGFA 320F2812PGFQ 320F2812GHHA 320F2812GHHQ 320F2810PBKA 320F2810PBKQ 320F2812PGFA tms dsp 320F2812PGFA 320f2811pbka 320F2810PBKA TI TMS F2812 ti part naming convention TMS320F2812 CC BGA 320F2811PBKQ 1833c05 PDF

    resistor 1k

    Abstract: 30X30
    Text: Submicron Fab: 71 Vista Montana • San Jose, CA 95134 TEL: 408 222-8888 • FAX: (408) 222-2707 Wafer Foundry Services 1.2µm CMOS Process Standard Features ❖ ❖ ❖ ❖ ❖ Standard Layout Rules and Process Parameters UT1X Stepper Single or double poly


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    30X30) resistor 1k 30X30 PDF

    44CR80S

    Abstract: Smart 700 SIEMENS ford siemens 1120 siemens relays Siemens SLE "electronic purse"
    Text: SPECTRUM North Tyneside wafer fab forges ahead: From ships to chips The new £1.1 billion $1.8 billion microchip plant being built by Siemens Microelectronics Ltd at North Tyneside in northeast England reached a new milestone on February 15 with the first integrated run on


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    16M-bit 44CR80S Smart 700 SIEMENS ford siemens 1120 siemens relays Siemens SLE "electronic purse" PDF

    404-011

    Abstract: dmb2856 404002
    Text: Silicon Beam-Lead and Chip EHAlpha Schottky Barrier Mixer Diodes DMB, DME, DMF and DMJ Series Features • Ideal for MIC ■ Low 1/f Noise ■ Low Intermodulation Distortion ■ Low Turn On ■ Hermetically Sealed Packages ■ SPC Controlled Wafer Fab Description


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    DMB2853 DMB2854 DMB2855 DMB2856 404-011 404002 PDF

    MARKING ZE SOT-23

    Abstract: LTA 703 S marking ar sot-23 212 s sot-23 Y1 SOT-23 TVS marking LZ ON
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA BZX84C2V4LT1 SERIES 225 mW SOT-23 Zener Voltage Regulator Diodes 225 mW SOT-23 GENERAL DATA APPLICABLE TO ALL SERIES IN THIS GROUP Zener Voltage Regulator Diodes u Manufacturing Locations: 3 1 Cathode Anode WAFER FAB: Phoenix, Arizona


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    OT-23 BZX84C2V4LT1 OT-23 MARKING ZE SOT-23 LTA 703 S marking ar sot-23 212 s sot-23 Y1 SOT-23 TVS marking LZ ON PDF

    MARKING 43 SOT23 REGULATOR

    Abstract: MARKING ZE SOT-23 TVS in SOT-23 marking 8A sot-23 8k sot 23 marking 8Y SOT23 8J SOT23 8C SOT-23 8c SOT 23 marking 46 sot-23
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MMBZ5221BLT1 SERIES 225 mW SOT-23 Zener Voltage Regulator Diodes 225 mW SOT-23 GENERAL DATA APPLICABLE TO ALL SERIES IN THIS GROUP Zener Voltage Regulator Diodes u Manufacturing Locations: 3 1 Cathode Anode WAFER FAB: Phoenix, Arizona


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    OT-23 MMBZ5221BLT1 OT-23 MARKING 43 SOT23 REGULATOR MARKING ZE SOT-23 TVS in SOT-23 marking 8A sot-23 8k sot 23 marking 8Y SOT23 8J SOT23 8C SOT-23 8c SOT 23 marking 46 sot-23 PDF