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    RJP1CS07DWA-00#W0 Renesas Electronics Corporation IGBT 1250V 150A Wafer Visit Renesas Electronics Corporation
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    Kenco Label & Tag 1.5WAFERSEAL4000

    FROSTED TRANSLUCENT 1.5" CIRCLE
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    Analog Devices Inc AD9500WAFER

    IC ADC WAFER
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    IC AMP CLASS A MONO WAFER
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    WAFER Datasheets (500)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    57C128F-70 Waferscale Integration 16K x 8 CMOS EPROM Memory Scan PDF
    57C128F-90 Waferscale Integration 16K x 8 CMOS EPROM Memory Scan PDF
    PSD301 Waferscale Integration Low Cost MCU Peripherials Original PDF
    PSD301-B-15J Waferscale Integration Programmable system device, 14 PLD inputs, EPROM 256K, bus width x8 or x16, 5V, 150ns Original PDF
    PSD301-B-15L Waferscale Integration Programmable system device, 14 PLD inputs, EPROM 256K, bus width x8 or x16, 5V, 150ns Original PDF
    PSD301-B-15M Waferscale Integration Programmable system device, 14 PLD inputs, EPROM 256K, bus width x8 or x16, 5V, 150ns Original PDF
    PSD301-B-15U Waferscale Integration Programmable system device, 14 PLD inputs, EPROM 256K, bus width x8 or x16, 5V, 150ns Original PDF
    PSD301-B-70J Waferscale Integration Programmable system device, 14 PLD inputs, EPROM 256K, bus width x8 or x16, 5V, 70ns Original PDF
    PSD301-B-70L Waferscale Integration Programmable system device, 14 PLD inputs, EPROM 256K, bus width x8 or x16, 5V, 70ns Original PDF
    PSD301-B-70M Waferscale Integration Programmable system device, 14 PLD inputs, EPROM 256K, bus width x8 or x16, 5V, 70ns Original PDF
    PSD301-B-70U Waferscale Integration Programmable system device, 14 PLD inputs, EPROM 256K, bus width x8 or x16, 5V, 70ns Original PDF
    PSD301-B-90JI Waferscale Integration Programmable system device, 14 PLD inputs, EPROM 256K, bus width x8 or x16, 5V, 90ns Original PDF
    PSD301-B-90LI Waferscale Integration Programmable system device, 14 PLD inputs, EPROM 256K, bus width x8 or x16, 5V, 90ns Original PDF
    PSD301-B-90MI Waferscale Integration Programmable system device, 14 PLD inputs, EPROM 256K, bus width x8 or x16, 5V, 90ns Original PDF
    PSD301-B-90UI Waferscale Integration Programmable system device, 14 PLD inputs, EPROM 256K, bus width x8 or x16 , 5V, 90ns Original PDF
    PSD301L Waferscale Integration Field Programmable Microcontroller Peripheral Original PDF
    PSD301R-B-15J Waferscale Integration Programmable system device, 14 PLD inputs, EPROM 256K, bus width x8 or x16, 5V, 150ns Original PDF
    PSD301R-B-70J Waferscale Integration Programmable system device, 14 PLD inputs, EPROM 256K, bus width x8 or x16, 5V, 70ns Original PDF
    PSD301R-B-90JI Waferscale Integration Programmable system device, 14 PLD inputs, EPROM 256K, bus width x8 or x16, 5V, 90ns Original PDF
    PSD302 Waferscale Integration Low Cost MCU Peripherials Original PDF
    ...

    WAFER Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: SB 1660 SCHOTTKY DIE SPECIFICATION General Description: 60 V 16 A 5Standard □Low VF， ELECTRICAL CHARACTERISTICS SYM DC Blocking Voltage: Ir=1mA(for wafer form) VRRM Ir=0.5mA (for dice form) Average Rectified Forward Current IFAV Maximum Instantaneous Forward Voltage


    Original     		PDF SB1660 96mil)

    JS-CH-1132R-XX

    Abstract: No abstract text available
    Text: 1 2 3 4 5 6 7 8 SPECIFICATIONS Voltage Rating: Current Rating: Insulation Resistance: Contact Resistance: Withstanding Voltage: Temperature Range: A B WAFER Poles: Contact Material: Base Material: C Poles 2 3 4 5 6 7 8 9 10 11 12 13 14 15 D E F 9 250V AC/DC


    Original     		PDF 1000Mâ UL94V-0 JS-CH-1132R-XX JS-CH-1132R-XX

    XP1073-BD

    Abstract: xp1073 DM6030HK XP107
    Text: 34.0-37.0 GHz GaAs MMIC Power Amplifier P1073-BD February 2010 - Rev 16-Feb-10 Features Ka-Band 6W Power Amplifier 22.0 dB Small Signal Gain +37.0 dBm Pulsed Saturated Output Power 24% Power Added Efficiency PAE % 100% On-Wafer RF, DC and Output Power Testing


    Original     		PDF P1073-BD 16-Feb-10 MIL-STD-883 XP1073-BD XP1073-BD xp1073 DM6030HK XP107

    INCOMING RAW MATERIAL INSPECTION chart

    Abstract: INCOMING RAW MATERIAL INSPECTION form INCOMING RAW MATERIAL INSPECTION INCOMING RAW MATERIAL INSPECTION method INCOMING RAW MATERIAL flowchart LINEAR TECHNOLOGY mark code INCOMING MATERIAL FLOW PROCESS INCOMING RAW MATERIAL aql incoming inspection mil-std-883 2015 Gold Ball Bond Shear
    Text: Pg. 1 of 3 ATTACHMENT 2. ASSEMBLY FLOWCHART INCOMING Vendor: Product: Package: Location of Wafer Fab: Assembly: Final Test: Q.C. Test Source Accept Test: Quality Contact: Linear Technology BIPOLAR PROCESS TO-92 Linear Technology Carsem Maylasia Linear Technology


    Original     		PDF MIL-STD-883 INCOMING RAW MATERIAL INSPECTION chart INCOMING RAW MATERIAL INSPECTION form INCOMING RAW MATERIAL INSPECTION INCOMING RAW MATERIAL INSPECTION method INCOMING RAW MATERIAL flowchart LINEAR TECHNOLOGY mark code INCOMING MATERIAL FLOW PROCESS INCOMING RAW MATERIAL aql incoming inspection mil-std-883 2015 Gold Ball Bond Shear

    NEZ3436-30E

    Abstract: No abstract text available
    Text: S-BAND INTERNALLY NEZ3436-30E MATCHED POWER GaAs MESFET FEATURES OUTLINE DIMENSIONS Units in mm • HIGH OUTPUT POWER: 30 W PACKAGE OUTLINE T-79 • LOW DISTORTION: -45 dBc IM3 (@33 dBm SCL) (Verified by a Wafer Qual Test) 24±0.2 • HIGH LINEAR GAIN: 10.0 dB


    Original     		PDF NEZ3436-30E NEZ3436-30E 24-Hour

    IGBT THEORY AND APPLICATIONS 400V

    Abstract: TEK 370A tesec IGBT THEORY AND APPLICATIONS bj transistor igbt high voltage pnp transistor 700v jfet curve tracer short circuit tracer schematic bipolar transistor tester AN10861
    Text: Application Note AN-1086 BVCES Testing Considerations for Ultra-thin wafer B B Depletion Stop Trench IGBTs By Chiu Ng, Al Diy, Alberto Fernandez, Vijay Bolloju Table of Contents Page


    Original     		PDF AN-1086 1628/D. IGBT THEORY AND APPLICATIONS 400V TEK 370A tesec IGBT THEORY AND APPLICATIONS bj transistor igbt high voltage pnp transistor 700v jfet curve tracer short circuit tracer schematic bipolar transistor tester AN10861

    HS-1212RH

    Abstract: NV SMD TRANSISTOR 5962F9683101VPA 5962F9683101VPC HA5023 HS7-1212RH-Q HS7B-1212RH-Q
    Text: HS-1212RH Data Sheet Radiation Hardened, Dual, High Speed Low Power, Video Closed Loop Buffer The HS-1212RH is a dual closed loop buffer featuring user programmable gain and high speed performance. Manufactured on Intersil’s proprietary complementary bipolar UHF-1 DI bonded wafer process, this device offers


    Original     		PDF HS-1212RH HS-1212RH 340MHz, MIL-PRF-38535. NV SMD TRANSISTOR 5962F9683101VPA 5962F9683101VPC HA5023 HS7-1212RH-Q HS7B-1212RH-Q

    5962F9764101VEA

    Abstract: 5962F9764101VEC 5962F9764101VXC GDIP1-T16 HS0-6254RH-Q HS1-6254RH HS-6254RH HS9-6254
    Text: HS-6254RH Data Sheet August 1999 Radiation Hardened Ultra High Frequency NPN Transistor Array The HS-6254RH is a Radiation Hardened array of five NPN transistors on a common substrate. One of our bonded wafer, dielectrically isolated fabrication processes provides


    Original     		PDF HS-6254RH HS-6254RH 5962F9764101VEA 5962F9764101VEC 5962F9764101VXC GDIP1-T16 HS0-6254RH-Q HS1-6254RH HS9-6254

    INCOMING RAW MATERIAL INSPECTION

    Abstract: INCOMING RAW MATERIAL INSPECTION method INCOMING Plate INSPECTION INCOMING RAW MATERIAL INSPECTION form INCOMING RAW MATERIAL flowchart INCOMING RAW MATERIAL LINEAR TECHNOLOGY mark code inspection sampling plan INCOMING RAW MATERIAL INSPECTION chart mil-std-883 2015 Gold Ball Bond Shear
    Text: Pg. 1 of 3 ATTACHMENT 2. ASSEMBLY FLOWCHART INCOMING Vendor: Product: Package: Location of Wafer Fab: Assembly: Final Test: Q.C. Test Source Accept Test: Quality Contact: Linear Technology Corporation Bipolar Process 3 Lead SOT-223 Linear Technology Corp., Milpitas,


    Original     		PDF OT-223 MIL-STD-883 INCOMING RAW MATERIAL INSPECTION INCOMING RAW MATERIAL INSPECTION method INCOMING Plate INSPECTION INCOMING RAW MATERIAL INSPECTION form INCOMING RAW MATERIAL flowchart INCOMING RAW MATERIAL LINEAR TECHNOLOGY mark code inspection sampling plan INCOMING RAW MATERIAL INSPECTION chart mil-std-883 2015 Gold Ball Bond Shear

    TIC216

    Abstract: TIC216D TIC216M TIC216N 15-V TIC216S
    Text: TIC216 SERIES SILICON TRIACS ● Sensitive Gate Triacs ● 6 A RMS ● Glass Passivated Wafer MT1 1 ● 400 V to 800 V Off-State Voltage MT2 2 ● Max IGT of 5 mA Quadrants 1 - 3 G 3 TO-220 PACKAGE (TOP VIEW) Pin 2 is in electrical contact with the mounting base.


    Original     		PDF TIC216 O-220 TIC216D TIC216M TIC216S TIC216N TIC216D TIC216M TIC216N 15-V TIC216S

    4780

    Abstract: CDSC706-T05C silver ag wire Bond
    Text: MATERIAL DECLARATION SHEET Material # CDSC706 Series Product Line ESD Protection Date 1/1/2007 RoHS Compliant Yes COMPONENT DETAILS No. Construction element Material group Material weight [g] 1 Lead Frame Lead Frame 0.002570 2 Wafer Silicon 0.001434 3 Gold Bond wire


    Original     		PDF CDSC706 CDSC706-T05C 4780 CDSC706-T05C silver ag wire Bond

    Untitled

    Abstract: No abstract text available
    Text: FUJITSU SEMICONDUCTOR NEW PRODUCTS NP05-11424-1E 16 Mbit Mobile FCRAMTM MB82D01181E-60L New released • FEATURES • Asynchronous SRAM interface • Byte Control with LB, UB pin Low Power Consumption Power Down Mode Chip/Wafer Business SRAM compatible pinout FBGA


    Original     		PDF NP05-11424-1E MB82D01181E-60L MB82D01181E

    TRANSISTOR R1002

    Abstract: R1002 TRANSISTOR R1002 84-1LMI XR1002
    Text: 20.0-32.0 GHz GaAs MMIC Receiver R1002 October 2001 - Rev 10/05/01 Features Chip Device Layout y 20.0-32.0 GHz Frequency Range High Dynamic Range Receiver +4.0 dBm Third Order Intercept 3.0 dB Typical Noise Figure 18.0 dB Typical Image Rejection 100% On-Wafer RF and DC Testing


    Original     		PDF R1002 MIL-STD-883 TRANSISTOR R1002 R1002 TRANSISTOR R1002 84-1LMI XR1002

    Untitled

    Abstract: No abstract text available
    Text: TLV5614IYE www.ti.com SLAS391A − JULY 2003 − REVISED AUGUST 2003 2.7ĆV TO 5.5ĆV, 12ĆBIT QUAD DAC IN WAFER CHIP SCALE PACKAGE FEATURES D Four 12-Bit D/A Converters D Programmable Settling Time of Either 3 µs or D 9 µs Typ TMS320 DSP Family, Q SPI, and


    Original     		PDF TLV5614IYE SLAS391A 12-Bit TMS320ï

    TC07AA

    Abstract: TIC225 TC07AB TIC225M 15-V TIC225D TIC225N TIC225S
    Text: TIC225 SERIES SILICON TRIACS ● Sensitive Gate Triacs ● 8 A RMS, 70 A Peak ● Glass Passivated Wafer MT1 1 ● 400 V to 800 V Off-State Voltage MT2 2 ● Max IGT of 5 mA Quadrant 1 G 3 TO-220 PACKAGE (TOP VIEW) Pin 2 is in electrical contact with the mounting base.


    Original     		PDF TIC225 O-220 TIC225D TIC225M TIC225S TIC225N TI07AB TC07AA TC07AB TIC225M 15-V TIC225D TIC225N TIC225S

    1n4148 die chip

    Abstract: 1N4150 DIE 1N4148 chip 1n4148 die WN diode CPD41-1N4150-CT DIE CHIP 51 BAS56 CPD41 CPD93V
    Text: PCN # 109 Notification Date: 21 April 2009 mailto:processchange@centralsemi.com http://www.centralsemi.com/processchange Process Change Notice Parts Affected: Chip process CPD41, High Current Switching Diode discrete semiconductors, wafers, and die in chip


    Original     		PDF CPD41, CPD41 CPD93V CPD41-BAS56-WN CPD41-CEN923-CT CPD41-CMPD4150-WR CPD41-CMPD4150-WS CPD41-CMPD914-WN CPD41-1N3600-WN 1n4148 die chip 1N4150 DIE 1N4148 chip 1n4148 die WN diode CPD41-1N4150-CT DIE CHIP 51 BAS56

    TIC236 application note

    Abstract: TIC236N apply TIC236 TIC236M 15-V TIC236D TIC236N TIC236S
    Text: TIC236 SERIES SILICON TRIACS ● High Current Triacs ● 12 A RMS ● Glass Passivated Wafer MT1 1 ● 400 V to 800 V Off-State Voltage MT2 2 ● Max IGT of 50 mA Quadrants 1 - 3 G 3 TO-220 PACKAGE (TOP VIEW) Pin 2 is in electrical contact with the mounting base.


    Original     		PDF TIC236 O-220 TIC236D TIC236M TIC236S TIC236N TC08AE TC08AD TIC236 application note TIC236N apply TIC236M 15-V TIC236D TIC236N TIC236S

    CPD64

    Abstract: 1N3595 1n457a equivalent
    Text: PCN # 110 Notification Date: 21 April 2009 mailto:processchange@centralsemi.com http://www.centralsemi.com/processchange Process Change Notice Parts Affected: Chip process CPD64, Low Leakage Diode discrete semiconductors, wafers, and die in chip form. Extent of Change:


    Original     		PDF CPD64, CPD64-CLL459A-CT CPD64-CMPD3003-CT CPD64-CMPD3003-WN CPD64-1N3595-CT CPD64-1N3595-WN CPD64-1N3595-WR CPD64-1N457A-CT CPD64-1N485B-CT CMDD3003 CPD64 1N3595 1n457a equivalent

    tic126

    Abstract: TIC126D TIC126M TIC126D equivalent TIC126N "Silicon Controlled Rectifiers" pdf tic126n TIC126S DC12-10
    Text: TIC126 SERIES SILICON CONTROLLED RECTIFIERS ● 12 A Continuous On-State Current ● 100 A Surge-Current ● Glass Passivated Wafer ● 400 V to 800 V Off-State Voltage K 1 ● Max IGT of 20 mA A 2 G 3 TO-220 PACKAGE TOP VIEW Pin 2 is in electrical contact with the mounting base.


    Original     		PDF TIC126 O-220 TIC126D TIC126M TIC126S TIC126N TIC126D TIC126M TIC126D equivalent TIC126N "Silicon Controlled Rectifiers" pdf tic126n TIC126S DC12-10

    PHHI

    Abstract: phui PGYI TPS79301 TPS79318 TPS79325 TPS79328 TPS793285 TPS79330 TPS79333
    Text: DBV 5 DBV 6 TPS79301, TPS79318 TPS79325, TPS79328, TPS793285 TPS79330, TPS79333, TPS793475 YEQ, YZQ www.ti.com SLVS348I – JULY 2001 – REVISED MAY 2005 ULTRALOW-NOISE, HIGH PSRR, FAST RF 200-mA LOW-DROPOUT LINEAR REGULATORS IN NanoStar WAFER CHIP SCALE AND SOT23


    Original     		PDF TPS79301, TPS79318 TPS79325, TPS79328, TPS793285 TPS79330, TPS79333, TPS793475 SLVS348I 200-mA PHHI phui PGYI TPS79301 TPS79318 TPS79325 TPS79328 TPS793285 TPS79330 TPS79333

    TLV5608

    Abstract: TLV5608IDW TLV5608IYE TLV5608IYER TLV5610 TLV5610IDW TLV5610IYE TMS320
    Text: TLV5610IYE TLV5608IYE www.ti.com SLAS393 − OCTOBER 2003 2.7 V TO 5.5 V, 12Ć AND 10ĆBIT OCTAL DAC IN WAFER CHIP SCALE PACKAGE FEATURES D Eight Voltage Output DACs in One Package − TLV5610IYE . . . 12-Bit − TLV5608IYE . . . 10-Bit D Programmable Settling Time vs Power


    Original     		PDF TLV5610IYE TLV5608IYE SLAS393 10BIT 12-Bit 10-Bit TMS320 TLV5608 TLV5608IDW TLV5608IYE TLV5608IYER TLV5610 TLV5610IDW TLV5610IYE

    EPC2001

    Abstract: EPC Gan transistor FX-93 FET MARKING QG
    Text: eGaN FET DATASHEET EPC2001 EPC2001 – Enhancement Mode Power Transistor VDSS , 100 V RDS ON , 7 mW ID , 25 A PRELIMINARY EFFICIENT POWER CONVERSION HAL Gallium Nitride is grown on Silicon Wafers and processed using standard CMOS equipment leveraging the infrastructure that has been developed over the last 55 years. GaN’s exceptionally high electron mobility and low temperature coefficient allows very low RDS(ON), while its lateral device structure


    Original     		PDF EPC2001 EPC2001 EPC Gan transistor FX-93 FET MARKING QG

    PGVI

    Abstract: phui pgxi PHHI PGYI PHJI TPS7933 TPS79318 TPS79325 TPS793285
    Text: DBV 6 DBV 5 TPS79301, TPS79318 TPS79325, TPS79328, TPS793285 TPS79330, TPS79333, TPS793475 YEQ www.ti.com SLVS348H – JULY 2001 – REVISED OCTOBER 2004 ULTRALOW-NOISE, HIGH PSRR, FAST RF 200-mA LOW-DROPOUT LINEAR REGULATORS IN NanoStar WAFER CHIP SCALE AND SOT23


    Original     		PDF TPS79301, TPS79318 TPS79325, TPS79328, TPS793285 TPS79330, TPS79333, TPS793475 SLVS348H 200-mA PGVI phui pgxi PHHI PGYI PHJI TPS7933 TPS79318 TPS79325 TPS793285

    Untitled

    Abstract: No abstract text available
    Text: Preliminary Specification 250V, 64 Channel Push-Pull Driver with Adjustable Source/Sink Current Ordering Information Package Options Device Die in waffle pack Bumped die in waffle Pack Die in wafer form HV3225 HV3225X HV3225BX HV3225WX Features General Description


    OCR Scan     		PDF HV3225 HV3225X HV3225BX HV3225WX HVOUT53/12 HVOUT52/13 HVQUT51/14 HVOUT50/15 T48/17 HVOUT42/23