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    W981616AH Search Results

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    W981616AH Price and Stock

    Winbond Electronics Corp W981616AH-6

    SDRAM, 1M x 16, 50 Pin, Plastic, TSOP
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Quest Components W981616AH-6 12
    • 1 $1.875
    • 10 $1.725
    • 100 $1.725
    • 1000 $1.725
    • 10000 $1.725
    		Buy Now

    W981616AH Datasheets (6)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    W981616AH Winbond Electronics 512 x 2 Banks x 16 Bits SDRAM Original PDF
    W981616AH-6 Winbond Electronics 512K x 2 BANKS x 16 BITS SDRAM Original PDF
    W981616AH-6G Winbond Electronics DRAM Chip: SDRAM: 2MByte: 3.3V Supply: Commercial: TSOP II: 50-Pin Original PDF
    W981616AH-7 Winbond Electronics 512K x 2 BANKS x 16 BITS SDRAM Original PDF
    W981616AH-7G Winbond Electronics DRAM Chip: SDRAM: 2MByte: 3.3V Supply: Commercial: TSOP II: 50-Pin Original PDF
    W981616AH-8 Winbond Electronics 512K x 2 BANKS x 16 BITS SDRAM Original PDF

    W981616AH Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    332M

    Abstract: W981616AH precharge CAM ramp 020 W981616AH-8
    Text: W981616AH 512K x 2 BANKS × 16 BITS SDRAM GENERAL DESCRIPTION W981616AH is a high-speed synchronous dynamic random access memory SDRAM , organized as 512K words × 2 banks × 16 bits. Using pipelined architecture and 0.20 µm process technology, W981616AH delivers a data bandwidth of up to 332M bytes per second (-6). For different applications


    Original     		PDF W981616AH W981616AH 332M precharge CAM ramp 020 W981616AH-8

    W83C553F-G

    Abstract: quality and reliability report W83977TF W83C43 W9925QF CMOS SPDM Process JEDEC-STD-78 0.6 um cmos process 8 bit uC w78c32BP
    Text: Quality and Reliability Report 6. Process Related Reliability Test Data Dynamic Early Fail Study EFR 1. Test Condition Condition: Dynamic operating condition with Vcc = 4.6V for 3.3V products, T = 125°C, f = 0.8 MHz/125 KHz for synchronous DRAMs Dynamic operating condition with Vcc = 6.5V/4.3V for 5V/3.3V products, T = 125°C, f = 1 MHz/100


    Original     		PDF Hz/125 Hz/100 W9925QF) W9920IF) W83C553FG W83977TF W83877F W91340 W9910IF) W83C553F-G quality and reliability report W83977TF W83C43 W9925QF CMOS SPDM Process JEDEC-STD-78 0.6 um cmos process 8 bit uC w78c32BP

    Hynix Cross Reference

    Abstract: dram cross reference WINBOND hyundai hy57v161610d WINBOND cross reference 64Mb samsung SDRAM TC59SM716FT/AFT 256mb K4H560838B hy57v
    Text: DRAM Cross Reference DDR SDRAM Winbond P/N W946432AD W942504AH W942508AH W942516AH Density 64Mb 256Mb 256Mb 256Mb Org. 2Mx32 64Mx4 32Mx8 16Mx16 Samsung K4D62323HA K4H560438B K4H560838B K4H561638B Hynix Hyundai HY57V643220CT HY5DU56422T HY5DU56822T HY5DU561622T


    Original     		PDF W946432AD W942504AH W942508AH W942516AH 256Mb 2Mx32 64Mx4 32Mx8 Hynix Cross Reference dram cross reference WINBOND hyundai hy57v161610d WINBOND cross reference 64Mb samsung SDRAM TC59SM716FT/AFT 256mb K4H560838B hy57v