692B
Abstract: circuit fluorescent tube 24v FX3440 INVERTOR APPLICATION NOTE invertor lcd invertor ZTX692B ZTX690B AN14 FMMT489
Text: Design Note 22 Issue 2 June 1995 LCD Display Fluorescent Backlighting C1 Typical transformer detail for 24V operation: RM8 FX3440, 0.1mm gap. W1 500T W2 3T W3 + W4 34T Note 1: For this circuit topology the collector-emitter only experiences a high voltage when the base has been
|
Original
|
PDF
|
FX3440,
ZTX690B/
ZTX690B
ZTX692B
ZTX688B-696B
500mA
FMMT489
FMMT491
FMMT618
DN22-1
692B
circuit fluorescent tube 24v
FX3440
INVERTOR APPLICATION NOTE
invertor lcd
invertor
AN14
|
FM11xx
Abstract: sot23 pet R05 SOT23
Text: TAPE & REEL SPECIFICATIONS 8-pin SOT23 Package Carrier Tape Critical Dimensions 2.0±0.05 Ø1.55±0.05 0.2±0.05 4.0±0.1 E A F W B0 B B A K0 R0.5 TYPICAL P1 A0 Ø1.0+0.1 -0 SECTION A-A SECTION B-B Lead Count Package 8 SOT23 8-pin Carrier Tape Dimensions mm
|
Original
|
PDF
|
FM11xx
80036G4
80019G3
545-FRAM,
FM11xx
sot23 pet
R05 SOT23
|
SOT23 JEDEC standard orientation
Abstract: w3 sot23 D0 sot23 CBVK741B019 F63TNR MMSZ5221B SOT23-3L JEDEC standard
Text: SOT-23 Std Tape and Reel Data SOT23-3L Packaging Configuration: Figure 1.0 Customized Label Packaging Description: SOT23-3L parts are shipped in tape. The carrier tape is made from a dissipative carbon filled polycarbonate resin. The cover tape is a multilayer film (Heat Activated
|
Original
|
PDF
|
OT-23
OT23-3L
177cm
330cm
SOT23 JEDEC standard orientation
w3 sot23
D0 sot23
CBVK741B019
F63TNR
MMSZ5221B
SOT23-3L JEDEC standard
|
w3 sot23-5
Abstract: 011 B SOT23 W1 A SOT23
Text: July 1997 SOT23-5 Tape and Reel Specification SOT23-5 Tape and Reel Specification inches millimeters Tape Format Tape Section # Cavities Cavity Status 0 (min) Empty Sealed 75 (min) Empty Sealed Leader (Start End) Carrier Trailer (Hub End) Cover Tape Status
|
Original
|
PDF
|
OT23-5
MS500009-1
MS500009-2
ms500009
w3 sot23-5
011 B SOT23
W1 A SOT23
|
Philips MARKING CODE
Abstract: Datasheets for BB132 varicap marking code W1 BAT18 A2p sot143 marking code A5 Marking codes sot143 marking code A3 marking A5 sot363 marking W1 S13 SOT363
Text: DISCRETE SEMICONDUCTORS Marking codes Small-signal Field-effect Transistors and Diodes 1999 May 12 Philips Semiconductors Small-signal Field-effect Transistors and Diodes Marking codes Product types in SOT23, SOT143, SOT323, SOT343, SOT363, SOD110, SOD323 and SOD523 packages are marked
|
Original
|
PDF
|
OT143,
OT323,
OT343,
OT363,
OD110,
OD323
OD523
BF992
PMBF4416A
BF510
Philips MARKING CODE
Datasheets for BB132 varicap
marking code W1
BAT18 A2p
sot143 marking code A5
Marking codes
sot143 marking code A3
marking A5 sot363
marking W1
S13 SOT363
|
4 phase stepper motor
Abstract: 12v transformer fx3311 FMMT618 ir remote control transmitter BCP54, BCX54 FMMT619 zetex product BCX54 LL5818
Text: Application Note 11 Issue 2 October 1995 Features and Applications of the FMMT618 and 619 High Current SOT23 replaces SOT89, SOT223 and D-PAK David Bradbury Switch 6A loads using a SOT23 transistor? Zetex has developed this new range to meet ever increasing demands for
|
Original
|
PDF
|
FMMT618
OT223
FMMT619
OT223
10-20mV
4 phase stepper motor
12v transformer
fx3311
ir remote control transmitter
BCP54, BCX54
zetex product
BCX54
LL5818
|
EDSD-1L8MM-REEL
Abstract: QFn 64 tape carrier
Text: TAPE AND REEL TAPE AND REEL SPECIFICATIONS—SURFACE MOUNT Tape and Reel Packing Tape and reel packing is available for all SO, TSOT thin SOT23 , SOT-23 3L/4L, SOT-223, SSOP, TSSOP, QFN, DFN and DD packages in accordance with EIA Specification 481-D with the following exceptions: (DFN(DCB), TSOT and SC70
|
Original
|
PDF
|
OT-23
OT-223,
481-D
EIA-418
356mm
EDSD-1L8MM-REEL
QFn 64 tape carrier
|
5630 SOT23
Abstract: FDN5630
Text: FDN5630 60V N-Channel PowerTrenchTM MOSFET General Description Features This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. This MOSFET features very low RDS ON in a small SOT23
|
Original
|
PDF
|
FDN5630
5630 SOT23
FDN5630
|
5630 PKG
Abstract: 5630 SOT23 marking code 10 sot23 FDN5630
Text: FDN5630 60V N-Channel PowerTrench MOSFET General Description Features This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. This MOSFET features very low RDS ON in a small SOT23
|
Original
|
PDF
|
FDN5630
5630 PKG
5630 SOT23
marking code 10 sot23
FDN5630
|
5630 PKG
Abstract: FDN5630 sot23 footprint
Text: FDN5630 60V N-Channel PowerTrench MOSFET General Description Features This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. This MOSFET features very low RDS ON in a small SOT23
|
Original
|
PDF
|
FDN5630
5630 PKG
FDN5630
sot23 footprint
|
MPSA65
Abstract: CBVK741B019 F63TNR MMBTA65 MPSA64 PN2222N PZTA65 bel 188 transistor
Text: MMBTA65 PZTA65 C C E E C B TO-92 SOT-23 E C B B SOT-223 Mark: 2W PNP Darlington Transistor This device is designed for applications requiring extremely high current gain at currents to 800 mA. Sourced from Process 61. See MPSA64 for characteristics. Absolute Maximum Ratings*
|
Original
|
PDF
|
MMBTA65
PZTA65
OT-23
OT-223
MPSA64
OT-223
MPSA65
CBVK741B019
F63TNR
MMBTA65
PN2222N
PZTA65
bel 188 transistor
|
Untitled
Abstract: No abstract text available
Text: LOW VOLTAGE DETECTOR NO. EA-056-prel 5[[[[$& 6 5,(6 OUTLINE 7KH 5 VHULHV DUH &026EDVHG YROWDJH GHWHFWRU ,&V ZLWK KLJK GHWHFWRU WKUHVKROG DFFXUDF\ DQG XOWUDORZ VXSSO\ FXUUHQW ZKLFK FDQ EH RSHUDWHG DW DQ H[WUHPHO\ ORZ YROWDJH DQG LV XVHG IRU V\VWHP UHVHW DV DQ H[DPSOH
|
Original
|
PDF
|
EA-056-prel
026EDVHG
R3111xxxxA/C
R3111XXXXC
R3111
|
CBVK741B019
Abstract: F63TNR MMBTA13 MPSA13 MPSA14 PN2222N PZTA13
Text: MMBTA13 PZTA13 C C E E C B TO-92 SOT-23 E C B B SOT-223 Mark: 1M NPN Darlington Transistor This device is designed for applications requiring extremely high current gain at collector currents to 1.0 A. Sourced from Process 05. See MPSA14 for characteristics.
|
Original
|
PDF
|
MMBTA13
PZTA13
OT-23
OT-223
MPSA14
CBVK741B019
F63TNR
MMBTA13
MPSA13
PN2222N
PZTA13
|
Untitled
Abstract: No abstract text available
Text: MMBTA65 PZTA65 C C E E C B TO-92 SOT-23 E C B B SOT-223 Mark: 2W PNP Darlington Transistor This device is designed for applications requiring extremely high current gain at currents to 800 mA. Sourced from Process 61. See MPSA64 for characteristics. Absolute Maximum Ratings*
|
Original
|
PDF
|
MPSA65
MMBTA65
PZTA65
MPSA65
MMBTA65
OT-23
OT-223
MPSA64
|
|
|
Untitled
Abstract: No abstract text available
Text: LOW VOLTAGE DETECTOR NO. EA-056-0301 5[[[[$& 6 5,(6 OUTLINE 7KH 5 VHULHV DUH &026EDVHG YROWDJH GHWHFWRU ,&V ZLWK KLJK GHWHFWRU WKUHVKROG DFFXUDF\ DQG XOWUDORZ VXSSO\ FXUUHQW ZKLFK FDQ EH RSHUDWHG DW DQ H[WUHPHO\ ORZ YROWDJH DQG LV XVHG IRU V\VWHP UHVHW DV DQ H[DPSOH
|
Original
|
PDF
|
EA-056-0301
026EDVHG
R3111xxxxA/C
R3111XXXXC
R3111
|
25c reference top mark sot23
Abstract: sot23 A63
Text: MMBTA63 PZTA63 C C E E C B TO-92 SOT-23 E C B B SOT-223 Mark: 2U PNP Darlington Transistor This device is designed for applications requiring extremely high current gain at currents to 800 mA. Sourced from Process 61. See MPSA64 for characteristics. Absolute Maximum Ratings*
|
Original
|
PDF
|
MPSA63
MMBTA63
PZTA63
MPSA63
MMBTA63
OT-23
OT-223
MPSA64
25c reference top mark sot23
sot23 A63
|
Untitled
Abstract: No abstract text available
Text: MMBTA13 PZTA13 C C E E C B TO-92 SOT-23 E C B B SOT-223 Mark: 1M NPN Darlington Transistor This device is designed for applications requiring extremely high current gain at collector currents to 1.0 A. Sourced from Process 05. See MPSA14 for characteristics.
|
Original
|
PDF
|
MPSA13
MMBTA13
PZTA13
MPSA13
MMBTA13
OT-23
OT-223
MPSA14
|
FQT13N60
Abstract: ic KA7812 7h top mark IMSYS777 MMBTA55 MPSA55 MPSA56 PZTA55 T0133 mark 2H SOT-23
Text: MMBTA55 PZTA55 C C E C B TO-92 SOT-23 E B B SOT-223 Mark: 2H E C PNP General Purpose Amplifier This device is designed for general purpose amplifier applications at collector currents to 300 mA. Sourced from Process 73. See MPSA56 for characteristics. Absolute Maximum Ratings*
|
Original
|
PDF
|
MMBTA55
PZTA55
OT-23
OT-223
MPSA56
FQT13N60
ic KA7812
7h top mark
IMSYS777
MMBTA55
MPSA55
PZTA55
T0133
mark 2H SOT-23
|
NT 407 F TRANSISTOR
Abstract: laptop inverter ccfl Royer converter buck royer inverter lcd BAV99 application royer converter application note Royer Royer resonant GENERALISED RESISTOR DATASHEET CTX110092
Text: Application Note 14 Issue 2 March 1996 Transistor Considerations for LCD Backlighting High Efficiency DC to AC Conversion Neil Chadderton Introduction LCD Backlighting has generated widespread interest from many diverse disciplines within the engineering industry. This has no doubt been fueled
|
Original
|
PDF
|
FZT869
OT223)
ZTX689B
FZT689B
FMMT619
125mV
200mV
ZTX1048A
ZDT1048
NT 407 F TRANSISTOR
laptop inverter ccfl
Royer converter
buck royer inverter lcd
BAV99 application
royer converter application note
Royer
Royer resonant
GENERALISED RESISTOR DATASHEET
CTX110092
|
BEL 188 pnp TRANSISTOR characteristics
Abstract: bel 188 transistor pnp pnp transistor bel 188 F63TNR MMBTA64 MPSA64 PN2222N PZTA64 CBVK741B019 bel 188 transistor
Text: MMBTA64 PZTA64 C C E E C B TO-92 SOT-23 E C B B SOT-223 Mark: 2V PNP Darlington Transistor This device is designed for applications requiring extremely high current gain at currents to 800 mA. Sourced from Process 61. Absolute Maximum Ratings* Symbol TA = 25°C unless otherwise noted
|
Original
|
PDF
|
MMBTA64
PZTA64
OT-23
OT-223
BEL 188 pnp TRANSISTOR characteristics
bel 188 transistor pnp
pnp transistor bel 188
F63TNR
MMBTA64
MPSA64
PN2222N
PZTA64
CBVK741B019
bel 188 transistor
|
MMBT2222A
Abstract: PN2222A PZT2222A
Text: MMBT2222A PZT2222A C C E E C B C TO-92 B B SOT-23 E SOT-223 Mark: 1P NPN General Purpose Amplifier This device is for use as a medium power amplifier and switch requiring collector currents up to 500 mA. Sourced from Process 19. Absolute Maximum Ratings* Symbol
|
Original
|
PDF
|
MMBT2222A
PZT2222A
OT-23
OT-223
MMBT2222A
PN2222A
PZT2222A
|
transistor bel 100
Abstract: bel 188 transistor CBVK741B019 F63TNR MMBTA14 MPSA14 PN2222N PZTA14
Text: MMBTA14 PZTA14 C C E E C B TO-92 SOT-23 E C B B SOT-223 Mark: 1N NPN Darlington Transistor This device is designed for applications requiring extremely high current gain at collector currents to 1.0 A. Sourced from Process 05. Absolute Maximum Ratings* Symbol
|
Original
|
PDF
|
MMBTA14
PZTA14
OT-23
OT-223
transistor bel 100
bel 188 transistor
CBVK741B019
F63TNR
MMBTA14
MPSA14
PN2222N
PZTA14
|
BEL 188 pnp TRANSISTOR characteristics
Abstract: bel 188 transistor pnp transistor bel 188 bel 188 transistor pnp Darlington transistor to 92 CBVK741B019 F63TNR MMBTA64 MPSA64 PN2222N
Text: MMBTA64 PZTA64 C C E E C B TO-92 SOT-23 E C B B SOT-223 Mark: 2V PNP Darlington Transistor This device is designed for applications requiring extremely high current gain at currents to 800 mA. Sourced from Process 61. Absolute Maximum Ratings* Symbol TA = 25°C unless otherwise noted
|
Original
|
PDF
|
MMBTA64
PZTA64
OT-23
OT-223
BEL 188 pnp TRANSISTOR characteristics
bel 188 transistor
pnp transistor bel 188
bel 188 transistor pnp
Darlington transistor to 92
CBVK741B019
F63TNR
MMBTA64
MPSA64
PN2222N
|
bulk inner box label ST
Abstract: No abstract text available
Text: 2N6427 MMBT6427 NPN Darlington Transistor This device is designed for applications requiring extremely high current gain at collector currents to 1.0 A. Sourced from Process 05. See MPSA14 for characteristics. Absolute Maximum Ratings* Symbol TA = 25°C unless otherwise noted
|
Original
|
PDF
|
2N6427
MMBT6427
2N6427
OT-23
MPSA14
bulk inner box label ST
|
