Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    W06* MARKING Search Results

    W06* MARKING Result Highlights (6)

    Part ECAD Model Manufacturer Description Download Buy
    OP249GSZ Analog Devices SO-8 MARKED AS \\OP249G\\ Visit Analog Devices Buy
    DAC08ESZ-REEL Analog Devices SO-16 MARKED AS \\DAC08E\\ Visit Analog Devices Buy
    REF02CSZ Analog Devices SO-8 MARKED AS \\REF02C\\ Visit Analog Devices Buy
    DAC08ESZ Analog Devices SO-16 MARKED AS \\DAC08E\\ Visit Analog Devices Buy
    REF03GSZ Analog Devices SO-8 MARKED AS \\REF03G\\ Visit Analog Devices Buy
    OP221GSZ Analog Devices SO-8 MARKED AS \\OP221G\\ Visit Analog Devices Buy

    W06* MARKING Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    N5256AW12

    Abstract: N5256AW10 N5260-60003 N5256AW15 N5257AR10 N5260
    Text: Agilent Technologies N5256/7/8A Millimeter-wave Modules User’s Guide Use this manual with the following document: Technical Overview 5989-7620EN Millimeter Modules N5256AW01, W02, W03, W05, W06, W08, W10, W12, W15, W22, X10, X12, N5257AR02, R03, R05, R06, R08, R10, R12, R15, R22


    Original     		PDF N5256/7/8A 5989-7620EN N5256AW01, N5257AR02, N5258AD02, N5256-90001 N5256AW12 N5256AW10 N5260-60003 N5256AW15 N5257AR10 N5260

    Untitled

    Abstract: No abstract text available
    Text: 256K x 16 EDO DRAM MT4C16270 DRAM For the latest data sheet revisions, please refer to the Micron Web site: www.micron.com/mti/msp/html/datasheet.html FEATURES • Industry-standard x16 pinouts, timing, functions and packages • High-performance CMOS silicon-gate process


    Original     		PDF 512-cycle MT4C16270 40-Pin

    Untitled

    Abstract: No abstract text available
    Text: 256K x 16 EDO DRAM TECHNOLOGY, INC. MT4C16270 DRAM FEATURES • Industry-standard x16 pinouts, timing, functions and packages • High-performance CMOS silicon-gate process • Single +5V ±10% power supply* • All inputs, outputs and clocks are TTL-compatible


    Original     		PDF MT4C16270 512-cycle 40-Pin MT4C16270DJ-4

    MT4C16270

    Abstract: MT4C16270DJ-4
    Text: OBSOLETE 256K x 16 EDO DRAM MT4C16270 DRAM For the latest data sheet revisions, please refer to the Micron Web site: www.micron.com/mti/msp/html/datasheet.html FEATURES • Industry-standard x16 pinouts, timing, functions and packages • High-performance CMOS silicon-gate process


    Original     		PDF MT4C16270 512-cycle 40-Pin MT4C16270 MT4C16270DJ-4

    MT4C16270DJ-4

    Abstract: MT4C16270
    Text: MT4C16270 256K x 16 DRAM TECHNOLOGY, INC. DRAM 256K x 16 DRAM 5V, EDO PAGE MODE FEATURES • Industry-standard x16 pinouts, timing, functions and packages • High-performance CMOS silicon-gate process • Single +5V ±10% power supply* • Low power, 3mW standby; 300mW active, typical


    Original     		PDF MT4C16270 300mW 512-cycle 40-Pin MT4C16270DJ-4 MT4C16270

    MT4C16270DJ-5

    Abstract: MT4C16270
    Text: MT4C16270 256K x 16 DRAM TECHNOLOGY, INC. DRAM 256K x 16 DRAM 5V, EDO PAGE MODE FEATURES • Industry-standard x16 pinouts, timing, functions and packages • High-performance CMOS silicon-gate process • Single +5V ±10% power supply* • Low power, 3mW standby; 300mW active, typical


    Original     		PDF MT4C16270 300mW 512-cycle 40-Pin MT4C16270DJ-5 MT4C16270

    w04 rectifier

    Abstract: marking w04 w04 rectifier bridge W02 rectifier
    Text: Formosa MS Bridge Rectifier W005 THRU W10 List List. 1 Package outline. 2 Features. 2


    Original     		PDF MIL-STD-750D METHOD-1036 JESD22-A102 METHOD-1051 METHOD-4066-2 1000hrs. METHOD-1021 w04 rectifier marking w04 w04 rectifier bridge W02 rectifier

    marking CODE W04

    Abstract: W04 bridge rectifier w08 bridge rectifier bridge rectifier w02 w08 MARKING MARKING W04 W04 54 w04 marking w02 rectifier bridge transistor w04
    Text: Formosa MS Bridge Rectifier W00 THRU W10 List List. 1 Package outline. 2 Features. 2


    Original     		PDF MIL-STD-750D METHOD-1051 METHOD-1056 METHOD-4066-2 1000hrs. METHOD-1038 175OC marking CODE W04 W04 bridge rectifier w08 bridge rectifier bridge rectifier w02 w08 MARKING MARKING W04 W04 54 w04 marking w02 rectifier bridge transistor w04

    transistor w06

    Abstract: marking code w06 transistor CBTD3306 CBTD3306D CBTD3306PW w06 transistor marking W06
    Text: CBTD3306 Dual bus switch with level shifting Rev. 04 — 25 March 2010 Product data sheet 1. General description The CBTD3306 dual FET bus switch features independent line switches. Each switch is disabled when the associated output enable nOE input is HIGH.


    Original     		PDF CBTD3306 CBTD3306 JESD78B JESD22-A114F JESD22-C101E transistor w06 marking code w06 transistor CBTD3306D CBTD3306PW w06 transistor marking W06

    BRIDGE-RECTIFIER w10

    Abstract: w08 marking transistor marking w04 W04 bridge rectifier rectifier bridge w10 marking W04 W08 marking diode 202E W005 w04 marking
    Text: W005 THRU W10 SINGLE PHASE SILICON BRIDGE RECTIFIER Reverse Voltage - 50 to 1000 Volts Forward Current - 1.5 Ampere FEATURES ● ● ● WOB Ideal for printed circuit board Surge overload rating: 50A peak High case dielectric strength MECHANICAL DATA Case: UL-94 Class V-0 recognized Flame Retardant Epoxy


    Original     		PDF UL-94 300us BRIDGE-RECTIFIER w10 w08 marking transistor marking w04 W04 bridge rectifier rectifier bridge w10 marking W04 W08 marking diode 202E W005 w04 marking

    bwz06

    Abstract: BZW06P10 diode bzw06-14 BZW06 7V0 BZW06P33B bzw06p376 BZW06P
    Text: BZW06-5V8,B/376,B BZW06P5V8,B/376,B  TRANSILTM FEATURES PEAK PULSE POWER= 600 W @ 1ms STAND-OFF VOLTAGE RANGE : From 5V8 to 376 V UNI AND BIDIRECTIONAL TYPES LOW CLAMPING FACTOR FAST RESPONSE TIME UL RECOGNIZED F126 Plastic DESCRIPTION Transil diodes provide high overvoltage protection by clamping action. Their instantaneous response to transients makes them particularly


    Original     		PDF BZW06-5V8 B/376 BZW06P5V8 bwz06 BZW06P10 diode bzw06-14 BZW06 7V0 BZW06P33B bzw06p376 BZW06P

    nitto SWT 10

    Abstract: nitto SWT-20 W07 sot 23 w04 transistor sot 23 UE-111AJ W04 sot 23 transistor w07 transistor marking w08 marking W07 transistor marking w04
    Text: PRODUCT CODING SYSTEM QSP0005_WEB.028 1 2.4.2007 Page 1 of 6 GENERAL AND DEFINITIONS This procedure defines the identification system for MAS products. The following abbreviations are used in this document. ESD EWS ID MAS MBB T&R 2 Electrostatic Sensitive Device


    Original     		PDF QSP0005 MAS1234AB3 MAS1234AB3xxxxx) 98AA2 MAS9198AA2xxxxx) nitto SWT 10 nitto SWT-20 W07 sot 23 w04 transistor sot 23 UE-111AJ W04 sot 23 transistor w07 transistor marking w08 marking W07 transistor marking w04

    CBD3306

    Abstract: sot902 marking w06 D306 tssop8 CBTD3306
    Text: CBTD3306 Dual bus switch with level shifting Rev. 8 — 1 May 2012 Product data sheet 1. General description The CBTD3306 dual FET bus switch features independent line switches. Each switch is disabled when the associated output enable nOE input is HIGH.


    Original     		PDF CBTD3306 CBTD3306 JESD78B JESD22-A114F JESD22-C101E CBTD3306D CBD3306 sot902 marking w06 D306 tssop8

    CBTD3306

    Abstract: No abstract text available
    Text: CBTD3306 Dual bus switch with level shifting Rev. 8 — 1 May 2012 Product data sheet 1. General description The CBTD3306 dual FET bus switch features independent line switches. Each switch is disabled when the associated output enable nOE input is HIGH.


    Original     		PDF CBTD3306 CBTD3306 JESD78B JESD22-A114F JESD22-C101E

    JESD22-C101E

    Abstract: CBTD3306 CBTD3306D CBTD3306PW D306 FET marking codes 1B
    Text: CBTD3306 Dual bus switch with level shifting Rev. 5 — 28 April 2011 Product data sheet 1. General description The CBTD3306 dual FET bus switch features independent line switches. Each switch is disabled when the associated output enable nOE input is HIGH.


    Original     		PDF CBTD3306 CBTD3306 JESD78B JESD22-A114F JESD22-C101E CBTD3306D CBTD3306PW D306 FET marking codes 1B

    IBM25CPC700DB3A83

    Abstract: DH27 DH06 DH07 IBM25CPC700DB3A83Z ae02 marking dh03 marking CODE W04 ae09 MARKING CODE k07
    Text: . CPC700 Memory Controller and PCI Bridge Features • PowerPC 60x/7xx bus. • 66.66 MHz • 83.33 MHz • Synchronous DRAM interface operates at the processor bus speed with support for ECC. • PCI Revision 2.1 Compliant Interface. • ROM/SRAM/External peripheral controller.


    Original     		PDF CPC700 60x/7xx 32-bit 25MHz CPC700 IBM25CPC700DB3A83 DH27 DH06 DH07 IBM25CPC700DB3A83Z ae02 marking dh03 marking CODE W04 ae09 MARKING CODE k07

    T4C16270

    Abstract: T4C16270DJ
    Text: |U|IC=RON 256K M T4C16270 X 16 DRAM 256K x 16 DRAM DRAM FEATURES PIN ASSIGNMENT Top View • Industry-standard x l6 pinouts, timing, functions and packages • High-perform ance CM OS silicon-gate process • Single +5V ±10% power supply* • Low power, 3m W standby; 300m W active, typical


    OCR Scan     		PDF T4C16270 512-cycle 40-Pin MT4C16270 MT4C16870 T4C16270DJ

    Untitled

    Abstract: No abstract text available
    Text: MT4C16270 256K X 16 DRAM MICRON I TECHNOLOGY. INC. 256K x 16 DRAM DRAM 5V, EDO PAGE MODE FEATURES PIN ASSIGNMENT Top View • Industry-standard x l6 pinouts, timing, functions and packages • High-performance CMOS silicon-gate process • Single +5V ±10% power supply*


    OCR Scan     		PDF MT4C16270 300mW 512-cycle 40-Pin

    Untitled

    Abstract: No abstract text available
    Text: |U |IC R O N MT4C16270 256KX 16 DRAM 2 5 6 K x 16 DRAM DRAM 5V, EDO PAGE MODE • Industry-standard x l6 pinouts, tim ing, functions and packages • High-performance CM O S silicon-gate process • Single +5V +10% pow er supply* • Low power, 3m W standby; 300m W active, typical


    OCR Scan     		PDF MT4C16270 256KX 512-cycle 40-Pin t2/95 00133m

    Untitled

    Abstract: No abstract text available
    Text: 2 5 6 K X 16 EDO DRAM |uiic: r o n MT4C16270 DRAM FEATURES • Industry-standard x l6 pinouts, timing, functions and packages • High-performance CMOS silicon-gate process • Single +5V ±10% power supply* • All inputs, outputs and clocks are TTL-compatible


    OCR Scan     		PDF MT4C16270 512-cycle

    Untitled

    Abstract: No abstract text available
    Text: 2 5 6 K X 16 EDO DRA M [M IC R O N DRAM M T 4C 16270 FEATURES • Industry-standard x l6 pinouts, tim ing, functions and packages • High-perform ance CM OS silicon-gate process • Single +5V ±10% pow er supply* • A ll inputs, outputs and clocks are TTL-com patible


    OCR Scan     		PDF 512-cycle 40-Pin

    Untitled

    Abstract: No abstract text available
    Text: MT4C16270 256K x 16 DRAM MICRON I TECHNOLOGY, NIC. DRAM 256K x 16 DRAM 5V, EDO PAGE MODE FEATURES • Industry-standard xl6 pinouts, timing, functions and packages • High-performance CMOS silicon-gate process • Single +5V ±10% power supply* • Low power, 3mW standby; 300mW active, typical


    OCR Scan     		PDF MT4C16270 300mW 512-cycle MT4C16270D

    MT4C16270DJ-7

    Abstract: No abstract text available
    Text: MICRON I 256K TECHNOLOGY. INC DRAM MT4C16270 X 16 DRAM 2 5 6 K X 16 D R A M m 5V, EDO PAGE MODE o O FEATURES • Industry-standard xl6 pinouts, timing, functions and packages • High-performance CMOS silicon-gate process • Single +5V ±10% power supply*


    OCR Scan     		PDF MT4C16270 40-Pin 300mW 512-cycle MT4C16270DJ-7

    Untitled

    Abstract: No abstract text available
    Text: MT4C16270 256K X 16 DRAM MICRON DRAM 256K x 16 DRAM 5V, EDO PAGE MODE PIN ASSIGNMENT (Top View • In d u stry-stan d ard x l 6 p in o u ts, tim in g , fu nction s an d p ackages • H ig h -p erfo rm a n ce C M O S silico n -g a te p ro cess • Sin g le + 5 V ± 1 0 % p o w er su p p ly*


    OCR Scan     		PDF MT4C16270 512-cycle 40-Pin