T4C16270
Abstract: T4C16270DJ
Text: |U|IC=RON 256K M T4C16270 X 16 DRAM 256K x 16 DRAM DRAM FEATURES PIN ASSIGNMENT Top View • Industry-standard x l6 pinouts, timing, functions and packages • High-perform ance CM OS silicon-gate process • Single +5V ±10% power supply* • Low power, 3m W standby; 300m W active, typical
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T4C16270
512-cycle
40-Pin
MT4C16270
MT4C16870
T4C16270DJ
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MT4C16270DJ-7
Abstract: No abstract text available
Text: MICPON SFM JCONDUCTOR INC L.1E D • b 11 IS 4 e} DDDTìSB 2ST MflRN M IC R O N I T4C16270 256K X 16 DRAM SEUiCOhOkJCTOH, INC. DRAM 256K x 16 DRAM EDO PAGE MODE FEATURES • Industry-standard x l6 pinouts, timing, functions and packages • High-performance CMOS silicon-gate process
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MT4C16270
512-cycle
MT4C16270DJ-7
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C1995
Abstract: No abstract text available
Text: MT4C1627Q 256Kx: t&DRAWT MICZRCJrsi B . [H 3 M m r r mc. DRAM 256K x 16 DRAM 5V, EDO PAGE MODE FEATURES • Ind ustry-stand ard x l 6 p in ou ts, tim in $, functions and packages • H igh-perform ance C M O S silicon-gat> process • Single +5V ±10% p o w er supp ly*
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MT4C1627Q
256Kx:
512-cycle
40-Pin
C1995.
4ci627o
C1995
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Untitled
Abstract: No abstract text available
Text: 2 5 6 K X 16 EDO DRA M [M IC R O N DRAM M T 4C 16270 FEATURES • Industry-standard x l6 pinouts, tim ing, functions and packages • High-perform ance CM OS silicon-gate process • Single +5V ±10% pow er supply* • A ll inputs, outputs and clocks are TTL-com patible
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512-cycle
40-Pin
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Untitled
Abstract: No abstract text available
Text: 256K x 16 EDO DRAM MICRON I TECHNOLOGY, INC. DRAM M T 4C 16270 FEATURES • Industry-standard x l6 pinouts, tim ing, functions and packages • H igh-perform ance CM OS silicon-gate process • Single +5V ±10% pow er supply* • A ll inputs, outputs and clocks are TTL-com patible
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512-cycle
40-Pin
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9609h
Abstract: LD 7577 ps k 2608 diode 33CA Samsung chrome book KM416C254 Bt2164 Solid state CCIR "ca 152" Solid state CCIR ca 152 S3 GENDAC
Text: A dvance This document contains information on a product under development. Information is not warranted and is subject to change. Bt2164_ High-Performance Video/Graphics Controller D istinguishing Features Applications Microsoft Windows 3.1, Windows 95™, and NT™ GUI acceleration
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Bt2164_
PC97TM
1N4148/9
L2164
Bt2164
L2164A
9609h
LD 7577 ps
k 2608
diode 33CA
Samsung chrome book
KM416C254
Bt2164
Solid state CCIR "ca 152"
Solid state CCIR ca 152
S3 GENDAC
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Untitled
Abstract: No abstract text available
Text: ADVANCE T4C16270/1 256K X 16 WIDE DRAM |U |IC = R O N WIDE DRAM 256K x 16 DRAM FEATURES PIN ASSIGNMENT Top View • Industry-standard xl6 pinouts, tim ing, functions and packages • H igh-perform ance CMOS silicon-gate process • Single +5V ±10% pow er supply
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MT4C16270/1
500mW
512-cycle
MT4C16271
40-Pin
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Untitled
Abstract: No abstract text available
Text: ADVANCE WIDE DRAM 256K x 16 DRAM FAST-PAGE-MODE WITH EXTENDED DATA-OUT FEATURES PIN ASSIGNMENT Top View • Industry-standard x l6 pinouts, timing, functions and packages • High-perform ance CM O S silicon-gate process • Single +5V ±10% power supply
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512-cycle
MT4C16271
40-Pin
MT4C16270/1
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Untitled
Abstract: No abstract text available
Text: ADVANCE l^ iic n o N 256K WIDE DRAM X T4C16270/1 16 WIDE DRAM 256K x 16 DRAM FEATURES • Industry-standard xl6 pinouts, timing, functions and packages • High-performance CMOS silicon-gate process • Single +5V ±10% power supply • Low power, 3mW standby; 500mW active, typical
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MT4C16270/1
500mW
512-cycle
MT4C16271
40-Pin
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4C16270
Abstract: t4c16270d
Text: 256K x 16 DRAM DRAM EDO PAGE MODE FEATURES PIN ASSIGNMENT Top View • In d u stry -stan dard x l6 pin ou ts, tim ing, functions an d p ack age s • H igh -perform an ce C M O S silicon-gate p ro cess • Sin gle +5V +10% p o w er su p p ly * • L o w p ow er, 3m W stan d by ; 375mW active, typical
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MT4C16270
375mW
512-cycle
40-Pin
4C16270
t4c16270d
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Untitled
Abstract: No abstract text available
Text: |U |IC R O N T4C16270 256KX 16 DRAM 2 5 6 K x 16 DRAM DRAM 5V, EDO PAGE MODE • Industry-standard x l6 pinouts, tim ing, functions and packages • High-performance CM O S silicon-gate process • Single +5V +10% pow er supply* • Low power, 3m W standby; 300m W active, typical
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MT4C16270
256KX
512-cycle
40-Pin
t2/95
00133m
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Untitled
Abstract: No abstract text available
Text: MICRON S E M I C O N D U C T O R INC b3E D • b 1 1 1 5 14 D0 0 7 ö E b SbS M U R N ADVANCE T4C16270/1 256KX 16 WIDE DRAM MICRON B SEMICONDUCTOR. INC. WIDE DRAM 256K x 16 DRAM FAST-PAGE-MODE WITH EXTENDED DATA-OUT FEATURES PIN ASSIGNMENT Top View • Industry-standard x l6 pinouts, timing, functions
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b11151
MT4C16270/1
256KX
500mW
512-cycle
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mt4c256
Abstract: RCD 2226
Text: ADVANCE 256K X M T 4C 16270/1 16 W IDE DRAM 256K X 16 DRAM WIDE DRAM FAST-PAGE-MODE WITH EXTENDED DATA-OUT FEATURES PIN ASSIGNMENT Top View • Industry-standard xl6 pinouts, tim ing, functions and packages • H igh-perform ance CMOS silicon-gate process
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500mW
512-cycle
MT4C16271
40-Pin
mt4c256
RCD 2226
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Untitled
Abstract: No abstract text available
Text: T4C16270 256K X 16 DRAM MICRON DRAM 256K x 16 DRAM 5V, EDO PAGE MODE PIN ASSIGNMENT (Top View • In d u stry-stan d ard x l 6 p in o u ts, tim in g , fu nction s an d p ackages • H ig h -p erfo rm a n ce C M O S silico n -g a te p ro cess • Sin g le + 5 V ± 1 0 % p o w er su p p ly*
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MT4C16270
512-cycle
40-Pin
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