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    VTP7110 Price and Stock

    Excelitas Technologies Corporation VTP7110H

    Photodiode; THT; 925nm; 400÷1150nm; 35nA
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    TME VTP7110H 1
    • 1 $1.76
    • 10 $1.51
    • 100 $1.15
    • 1000 $1.15
    • 10000 $1.15
    		Get Quote

    VTP7110 Datasheets (3)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    VTP7110 PerkinElmer Optoelectronics VTP Process Photodiode Original PDF
    VTP7110 EG&G FAST RESPONSE HIGH DARK RESISTANCE - Silicon Diodes Scan PDF
    VTP7110 EG&G Vactec VTP Process Photodiodes Scan PDF

    VTP7110 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: VTP Process Photodiodes VTP7110 PACKAGE DIMENSIONS inch mm CASE 7 LATERAL CHIP ACTIVE AREA: .0011 in2 (0.684 mm2) PRODUCT DESCRIPTION Small area planar silicon photodiode in a clear, lensed sidelooking package. These diodes exhibit low dark current under reverse bias and


    Original     		PDF VTP7110

    Untitled

    Abstract: No abstract text available
    Text: VTP Process Photodiodes VTP7110H PACKAGE DIMENSIONS inch mm CASE 7 LATERAL CHIP ACTIVE AREA: .0011 in2 (0.684 mm2) PRODUCT DESCRIPTION Small area planar silicon photodiode in a clear, lensed sidelooking package. These diodes exhibit low dark current under reverse bias and


    Original     		PDF VTP7110H

    VTP7110

    Abstract: No abstract text available
    Text: VTP Process Photodiodes VTP7110 PACKAGE DIMENSIONS inch mm CASE 7 LATERAL CHIP ACTIVE AREA: .0011 in2 (0.684 mm2) PRODUCT DESCRIPTION Small area planar silicon photodiode in a clear, lensed sidelooking package. These diodes exhibit low dark current under reverse bias and


    Original     		PDF VTP7110 VTP7110

    VTP7110H

    Abstract: No abstract text available
    Text: VTP Process Photodiodes VTP7110H PACKAGE DIMENSIONS inch mm CASE 7 LATERAL CHIP ACTIVE AREA: .0011 in2 (0.684 mm2) PRODUCT DESCRIPTION Small area planar silicon photodiode in a clear, lensed sidelooking package. These diodes exhibit low dark current under reverse bias and


    Original     		PDF VTP7110H VTP7110H

    C1383 NPN transistor collector base and emitter

    Abstract: NPN transistor c1383 C1383 transistor C1383 NPN transistor Light-Dependent Resistor specification c1983 transistor pin configuration of C1383 transistor LHI968 lhi878 c1383
    Text: Advanced sensor technologies for today’s breakthrough applications Table of Contents . www.optoelectronics.perkinelmer.com Table of Contents PerkinElmer Optoelectronics provides Digital Imaging, Sensor and Lighting technologies to speed the development of breakthrough applications for customers in biomedical,


    Original     		PDF 10-foot C1383 NPN transistor collector base and emitter NPN transistor c1383 C1383 transistor C1383 NPN transistor Light-Dependent Resistor specification c1983 transistor pin configuration of C1383 transistor LHI968 lhi878 c1383

    VTP8651

    Abstract: VTP1112 VTP4085 VTP1188S VTP11188S VTP1232 silicon photodiode array VTP1012 VTP7840 VTP100
    Text: VTP Process Photodiodes VTP100 PACKAGE DIMENSIONS inch mm CASE 52 FLAT SIDELOOKER CHIP ACTIVE AREA: .012 in2 (7.45 mm2) PRODUCT DESCRIPTION Planar silicon photodiode in a molded plastic sidelooker package. The package material is infrared transmitting (blocking visible light).


    Original     		PDF VTP100 VTP8651 VTP1112 VTP4085 VTP1188S VTP11188S VTP1232 silicon photodiode array VTP1012 VTP7840 VTP100

    Untitled

    Abstract: No abstract text available
    Text: VTP7110 VTP Process Photodiodes PACKAGE DIMENSIONS inch mm .0 55 (1 .4 0 ) •70 (1 7 .8 ) .045 ( 1 .1 4 ) r MINIMUM 028 (0 .7 1 ) MAX. 1- CATHODE r .1 80 ( 4 .5 7 ) .1 70 (4 .3 2 ) J_ (2 -5 4 ) ANODE - .04 (1 .0 2 ) NOM. ■065 (1 .6 5 ) .235 (5 .9 7 )


    OCR Scan     		PDF VTP7110

    VTP7110

    Abstract: No abstract text available
    Text: VTP7110 VTP Process Photodiodes P A C K A G E DIMENSIONS inch mm .0 5 5 ( 1 .4 0 ) .7 0 ( 1 7 . 8 ) .0 4 5 ( 1 . 1 4 ) MINIMUM .0 2 0 ( 0 . 7 1 ) MAX. CATHODE r .1 8 0 ( 4 . 5 7 ) .1 7 0 ( 4 .3 2 ) J_ ( 2 .5 4 ) ANODE -j •065 ( 1 .6 5 ) ■2S 5 ( 5 . 9 7 )


    OCR Scan     		PDF VTP7110 VTP7110

    VTP1113

    Abstract: VTP413 VTP3310L VTP1012 VTP1150 VTP1150S VTP1250 VTP1250S VTP5041 VTP7110
    Text: VTP PROCESS FAST RESPONSE HIGH DARK RESISTANCE PRODUCT DESCRIPTION FEATURES • Visible to enhanced IR spectral range. This series of P on N silicon diodes is primarily intended for use with reverse bias but m ay be used in the photovoltaic m ode. These diodes have ex­


    OCR Scan     		PDF 940nm, VTP1113 VTP413 VTP3310L VTP1012 VTP1150 VTP1150S VTP1250 VTP1250S VTP5041 VTP7110