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Excelitas Technologies Corporation VTP3310LAH Diode, Photo, 925Nm, 20°, T-1; No. Of Pins:2Pins; Diode Case Style:T-1 (3Mm); Wavelength Of Peak Sensitivity:925Nm; Angle Of Half Sensitivity ±:20°; Dark Current:0.035Μa; Operating Temperature Min:-40°C; Product Range:-; Msl:- Rohs Compliant: Yes \|Excelitas Tech VTP3310LAH
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Newark	VTP3310LAH	Bulk			500	1 - 10 - 100 - 1000 - 10000 -	Buy Now
RS	VTP3310LAH	Bulk	2		1	1 $1.59 10 $1.4 100 $1.27 1000 $1.19 10000 $1.19	Buy Now
Ozdisan Elektronik	VTP3310LAH					1 $1.42505 10 $1.42505 100 $1.2955 1000 $1.2955 10000 $1.2955	Get Quote

VTP3310L Datasheets (4)

Part	ECAD Model	Manufacturer	Description	Curated	Datasheet Type	PDF
VTP3310L		EG&G	FAST RESPONSE HIGH DARK RESISTANCE - Silicon Diodes		Scan	PDF
VTP3310LA		PerkinElmer Optoelectronics	VTP Process Photodiode		Original	PDF
VTP3310LA		EG&G Vactec	VTP Process Photodiodes		Scan	PDF
VTP3310LA		PerkinElmer Optoelectronics	Over 600 obsolete distributor catalogs now available on the Datasheet Archive - SILICON PHOTODIODES		Scan	PDF

VTP3310L Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
Untitled Abstract: No abstract text available Text: VTP Process Photodiodes VTP3310LAH PACKAGE DIMENSIONS inch mm CASE 50A LONG T-1 CHIP ACTIVE AREA: .0011 in2 (0.684 mm2) PRODUCT DESCRIPTION Small area planar silicon photodiode in a clear, long T-1, endlooking package. These diodes exhibit low dark current under reverse bias and	Original	VTP3310LAH	PDF
VTP3310L Abstract: No abstract text available Text: VTP Process Photodiodes VTP3310LA PACKAGE DIMENSIONS inch mm CASE 50A LONG T-1 CHIP ACTIVE AREA: .0011 in2 (0.684 mm2) PRODUCT DESCRIPTION Small area planar silicon photodiode in a clear, long T-1, endlooking package. These diodes exhibit low dark current under reverse bias and	Original	VTP3310LA VTP3310L	PDF
VTP3310LAH Abstract: VTP3310L Text: VTP Process Photodiodes VTP3310LAH PACKAGE DIMENSIONS inch mm CASE 50A LONG T-1 CHIP ACTIVE AREA: .0011 in2 (0.684 mm2) PRODUCT DESCRIPTION Small area planar silicon photodiode in a clear, long T-1, endlooking package. These diodes exhibit low dark current under reverse bias and	Original	VTP3310LAH VTP3310LAH VTP3310L	PDF
VTP3310LA Abstract: VTP3310L Text: VTP Process Photodiodes VTP3310LA PACKAGE DIMENSIONS inch mm CASE 50A LONG T-1 CHIP ACTIVE AREA: .0011 in2 (0.684 mm2) PRODUCT DESCRIPTION Small area planar silicon photodiode in a clear, long T-1, endlooking package. These diodes exhibit low dark current under reverse bias and	Original	VTP3310LA VTP3310LA VTP3310L	PDF
C1383 NPN transistor collector base and emitter Abstract: NPN transistor c1383 C1383 transistor C1383 NPN transistor Light-Dependent Resistor specification c1983 transistor pin configuration of C1383 transistor LHI968 lhi878 c1383 Text: Advanced sensor technologies for today’s breakthrough applications Table of Contents . www.optoelectronics.perkinelmer.com Table of Contents PerkinElmer Optoelectronics provides Digital Imaging, Sensor and Lighting technologies to speed the development of breakthrough applications for customers in biomedical,	Original	10-foot C1383 NPN transistor collector base and emitter NPN transistor c1383 C1383 transistor C1383 NPN transistor Light-Dependent Resistor specification c1983 transistor pin configuration of C1383 transistor LHI968 lhi878 c1383	PDF
VTP8651 Abstract: VTP1112 VTP4085 VTP1188S VTP11188S VTP1232 silicon photodiode array VTP1012 VTP7840 VTP100 Text: VTP Process Photodiodes VTP100 PACKAGE DIMENSIONS inch mm CASE 52 FLAT SIDELOOKER CHIP ACTIVE AREA: .012 in2 (7.45 mm2) PRODUCT DESCRIPTION Planar silicon photodiode in a molded plastic sidelooker package. The package material is infrared transmitting (blocking visible light).	Original	VTP100 VTP8651 VTP1112 VTP4085 VTP1188S VTP11188S VTP1232 silicon photodiode array VTP1012 VTP7840 VTP100	PDF
VTS3082 Abstract: 476 20k cap VTL5C3 980-2675 VTS3085 VTP1188S 980-0004 photoconductive cells VT935G vactrol Text: PerkinElmer Photoconductive Cells, Emitters, Photo Diodes/Transistors, Optoisolators Photoconductive Cells Silicon Photodiodes Electrical/Optical Characteristics @ 25¡C Photoconductive cells provide a very economical and technically superior solution for many light level	Original	2850K VTS3082 15K/1 VTS3085 2K/55K VTS3082 476 20k cap VTL5C3 980-2675 VTP1188S 980-0004 photoconductive cells VT935G vactrol	PDF
VTP1220FBH Abstract: VTS3082 VTB9412BH VTB1013B VTP1012H VTS3185H VTB8441BH VTD34H VTS3085H VTP4085H Text: 1745-2012:QuarkCatalogTempNew 9/17/12 5:02 PM Page 1745 20 Photodiodes, Phototransistors and IR Emitters RoHS Electrical/Optical Characteristics @ 25°C Stock No. Fig. Dark Current IO Shunt Resist. RSH Spectral Application Range H=100 fC 2850K A/W @ nm H=0	Original	2850K VTS3082H VTS3085H VTS3185H VTS3082H VTS3085H VTS3185H VTP1220FBH VTS3082 VTB9412BH VTB1013B VTP1012H VTB8441BH VTD34H VTP4085H	PDF
VTP3310LA Abstract: VTP331OLA VTP3310L Text: VTP Process Photodiodes VTP3310LA PACKAGE DIMENSIONS inch mm .0 3 7 (0 .9 4 ) .023 ÌO.Sfiì NOM. .1 6 0 (4 .0 6 ) .0 2 0 (0 .5 1 ) .2 0 5 (5 .2 1 ) M IN IM U M PRODUCT DESCRIPTION CASE 50A LO NGT-1 CHIP ACTIVE AREA: .0011 in2 (0.684 mm2) Small area planar silicon photodiode in	OCR Scan	VTP331OLA VTP3310LA VTP3310LA VTP331OLA VTP3310L	PDF
VTP1113 Abstract: VTP413 VTP3310L VTP1012 VTP1150 VTP1150S VTP1250 VTP1250S VTP5041 VTP7110 Text: VTP PROCESS FAST RESPONSE HIGH DARK RESISTANCE PRODUCT DESCRIPTION FEATURES • Visible to enhanced IR spectral range. This series of P on N silicon diodes is primarily intended for use with reverse bias but m ay be used in the photovoltaic m ode. These diodes have ex	OCR Scan	940nm, VTP1113 VTP413 VTP3310L VTP1012 VTP1150 VTP1150S VTP1250 VTP1250S VTP5041 VTP7110	PDF