PerkinElmer Optoelectronics
Abstract: VTE3322LAH VTE3324LAH
Text: GaAs Infrared Emitting Diodes VTE3322LAH, 24LAH Long T-1 Plastic Package — 940 nm PACKAGE DIMENSIONS inch mm CASE 50A LONG T-1 CHIP SIZE: .011" X .011" DESCRIPTION This narrow beam angle, 3 mm diameter plastic packages, GaAs, 940 nm emitter is suitable for use in optical switch applications.
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VTE3322LAH,
24LAH
VTE3322LAH
VTE3324LAH
PerkinElmer Optoelectronics
VTE3322LAH
VTE3324LAH
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Untitled
Abstract: No abstract text available
Text: GaAs Infrared Emitting Diodes VTE3322LAH, 24LAH Long T-1 Plastic Package — 940 nm PACKAGE DIMENSIONS inch mm CASE 50A LONG T-1 CHIP SIZE: .011" X .011" DESCRIPTION This narrow beam angle, 3 mm diameter plastic packages, GaAs, 940 nm emitter is suitable for use in optical switch applications.
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VTE3322LAH,
24LAH
VTE3322LAH
VTE3324LAH
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VTE3324LA
Abstract: VTE3322LA
Text: GaAs Infrared Emitting Diodes VTE3322LA, 24LA Long T-1 Plastic Package — 940 nm PACKAGE DIMENSIONS inch mm CASE 50A LONG T-1 CHIP SIZE: .011" X .011" DESCRIPTION This narrow beam angle, 3 mm diameter plastic packages, GaAs, 940 nm emitter is suitable for use in optical switch applications.
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VTE3322LA,
VTE3322LA
VTE3324LA
VTE3324LA
VTE3322LA
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C1383 NPN transistor collector base and emitter
Abstract: NPN transistor c1383 C1383 transistor C1383 NPN transistor Light-Dependent Resistor specification c1983 transistor pin configuration of C1383 transistor LHI968 lhi878 c1383
Text: Advanced sensor technologies for today’s breakthrough applications Table of Contents . www.optoelectronics.perkinelmer.com Table of Contents PerkinElmer Optoelectronics provides Digital Imaging, Sensor and Lighting technologies to speed the development of breakthrough applications for customers in biomedical,
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C1383 NPN transistor collector base and emitter
NPN transistor c1383
C1383 transistor
C1383 NPN transistor
Light-Dependent Resistor specification
c1983 transistor
pin configuration of C1383 transistor
LHI968
lhi878
c1383
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VTE1013
Abstract: VTE1113 VTE3322LA VTE3324LA opto127
Text: GaAs Infrared Emitting Diodes VTE1013 TO-46 Flat Window Package — 940 nm PACKAGE DIMENSIONS inch mm CASE 24A TO-46 HERMETIC (Flat Window) CHIP SIZE: .018" X .018" DESCRIPTION This wide beam angle TO-46 hermetic emitter contains a large area, double wirebonded, GaAs, 940 nm IRED chip suitable for higher
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VTE1013
VTE3322LA
VTE3324LA
VTE1013
VTE1113
VTE3322LA
VTE3324LA
opto127
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VTE1063
Abstract: VTE1163 VTE1261 VTE1262 VTE1281-1 VTE1281-2 VTE1281F VTE1281W-1 VTE1281W-2 VTE1285
Text: infrared emitting diodes Features 880 nm • Nine standard packages in hermetic and low-cost epoxy • End- and side-radiating packages • Graded Output • High efficiency GaAIAs, 880 nm LPE process Delivers twice the power of conventional GaAs 940 nm emitters
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VTE7172
VTE7173
VTE1013
VTE1113
VTE3322LA
VTE3324LA
VTE3372LA
VTE3374LA
VTE1063
VTE1163
VTE1261
VTE1262
VTE1281-1
VTE1281-2
VTE1281F
VTE1281W-1
VTE1281W-2
VTE1285
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Untitled
Abstract: No abstract text available
Text: SbE D 3D3QbOR GQ012GÔ GaAs Infrared Emitting Diodes « V C T VTE3322LA, 24LA Long T-1 Plastic Package — 940 nm E 155 & G VACTEC G PACKAGE DIMENSIONS inch mm .0 2 3 (0 58) SQ.0 1 7 (0 .4 3 ) .2 2 (S .6) .0 6 (1 .5 ) I .1 6 0 ( 4 .0 6 ) .1 4 0 (3 .5 6 )
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GQ012GÃ
VTE3322LA,
VTE3322LA
VTE3324LA
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VTE3322LA
Abstract: VTE3324LA Vactec 21
Text: SbE D 303DL0^ 000120fi 12S G aAs Infrared Emitting Diodes IVCT V TE3322LA, 24LA Long T-1 Plastic Package — 940 nm E G & G VACTEC PACKAGE DIMENSIONS inch mm .2 2 ( S .6 ) 1 6 0 (4 .0 6 ) • 205 ( 5 . 2 1 ) .1 9 5 ( 4 .9 5 ) | Plastic contour not controfed in region
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303DL0^
00012Dfl
VTE3322LA,
VTE3322LA
VTE3324LA
VTE3322LA
VTE3324LA
Vactec 21
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