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Excelitas Technologies Corporation VTE1113H HERMETIC LENSED IRED 880 NM - TO-46
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Ozdisan Elektronik	VTE1113H					1 $9.35649 10 $9.35649 100 $8.5059 1000 $8.5059 10000 $8.5059	Get Quote

VTE1113 Datasheets (3)

Part	ECAD Model	Manufacturer	Description	Curated	Datasheet Type	PDF
VTE1113		PerkinElmer Optoelectronics	GaAs Infrared Emitting Diode		Original	PDF
VTE1113		EG&G	HIGH POWER GaAs INFRARED EMITTING DIODES 920nm		Scan	PDF
VTE1113		EG&G Vactec	GaAs Infrared Emitting Diodes		Scan	PDF

VTE1113 Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
VTE1113 Abstract: TO46 Text: GaAs Infrared Emitting Diodes VTE1113 TO-46 Lensed Package — 940 nm PACKAGE DIMENSIONS inch mm CASE 24 TO-46 HERMETIC (Lensed) CHIP SIZE: .018" X .018" DESCRIPTION This narrow beam angle TO-46 hermetic emitter contains a large area, double wirebonded, GaAs, 940 nm IRED chip suitable for	Original	VTE1113 VTE1113 TO46	PDF
Untitled Abstract: No abstract text available Text: GaAs Infrared Emitting Diodes VTE1113H TO-46 Lensed Package — 940 nm PACKAGE DIMENSIONS inch mm CASE 24 TO-46 HERMETIC (Lensed) CHIP SIZE: .018" X .018" DESCRIPTION This narrow beam angle TO-46 hermetic emitter contains a large area, double wirebonded, GaAs, 940 nm IRED chip suitable for	Original	VTE1113H	PDF
VTE1113H Abstract: No abstract text available Text: GaAs Infrared Emitting Diodes VTE1113H TO-46 Lensed Package — 940 nm PACKAGE DIMENSIONS inch mm CASE 24 TO-46 HERMETIC (Lensed) CHIP SIZE: .018" X .018" DESCRIPTION This narrow beam angle TO-46 hermetic emitter contains a large area, double wirebonded, GaAs, 940 nm IRED chip suitable for	Original	VTE1113H VTE1113H	PDF
C1383 NPN transistor collector base and emitter Abstract: NPN transistor c1383 C1383 transistor C1383 NPN transistor Light-Dependent Resistor specification c1983 transistor pin configuration of C1383 transistor LHI968 lhi878 c1383 Text: Advanced sensor technologies for today’s breakthrough applications Table of Contents . www.optoelectronics.perkinelmer.com Table of Contents PerkinElmer Optoelectronics provides Digital Imaging, Sensor and Lighting technologies to speed the development of breakthrough applications for customers in biomedical,	Original	10-foot C1383 NPN transistor collector base and emitter NPN transistor c1383 C1383 transistor C1383 NPN transistor Light-Dependent Resistor specification c1983 transistor pin configuration of C1383 transistor LHI968 lhi878 c1383	PDF
VTE1013 Abstract: VTE1113 VTE3322LA VTE3324LA opto127 Text: GaAs Infrared Emitting Diodes VTE1013 TO-46 Flat Window Package — 940 nm PACKAGE DIMENSIONS inch mm CASE 24A TO-46 HERMETIC (Flat Window) CHIP SIZE: .018" X .018" DESCRIPTION This wide beam angle TO-46 hermetic emitter contains a large area, double wirebonded, GaAs, 940 nm IRED chip suitable for higher	Original	VTE1013 VTE3322LA VTE3324LA VTE1013 VTE1113 VTE3322LA VTE3324LA opto127	PDF
VTE1063 Abstract: VTE1163 VTE1261 VTE1262 VTE1281-1 VTE1281-2 VTE1281F VTE1281W-1 VTE1281W-2 VTE1285 Text: infrared emitting diodes Features 880 nm • Nine standard packages in hermetic and low-cost epoxy • End- and side-radiating packages • Graded Output • High efficiency GaAIAs, 880 nm LPE process Delivers twice the power of conventional GaAs 940 nm emitters	Original	VTE7172 VTE7173 VTE1013 VTE1113 VTE3322LA VTE3324LA VTE3372LA VTE3374LA VTE1063 VTE1163 VTE1261 VTE1262 VTE1281-1 VTE1281-2 VTE1281F VTE1281W-1 VTE1281W-2 VTE1285	PDF
VTE1116 Abstract: 3030L VTE1113 VTE1118 Text: 5bE T> m 3030^0^ 0001205 G aA s Infrared Emitting Diodes 41b « V C T VT E1 11 3, 16, 18 TO-46 Lensed Package — 940 nm T-q/-// E G & G VACT EC P A C K A G E D IM E N S IO N S inch mm •206 ( 5 .2 3 ) 1 .0 0 ( 2 5 .4 ) .I B B ( 4 .7 B ) ' .1 7 8 ( 4 . 5 2 )	OCR Scan	3030L VTE1113, T0-46 018-x VTE1113 VTE1116 VTE1118	PDF
H0A0872-n55 Abstract: H0A1405-1 H0A0865-L51 h0a1405 HOA708-1 HOA9 til78 phototransistor MOC70T3 ir diode TIL38 H0A1874-12 Text: Cross Reference Cross Reference Competition P/N Honeywell P/N Code Description Competition P/N 100 H0A0871-N55 B TRANS ASSY. PTX 5082-4205 CALL PHOTODIODES. P P P IN 101 H0A1872-12 BC TRANS ASSY. PTX 5082-4207 CALL PHOTODIODES. T018 TALL PIN 10501 H0A1872-1	OCR Scan	1N5722 1N5723 1N5724 1N5725 1N6264 1N6265 1N6266 2004-90xx 2600-70XX 2N5777-80 H0A0872-n55 H0A1405-1 H0A0865-L51 h0a1405 HOA708-1 HOA9 til78 phototransistor MOC70T3 ir diode TIL38 H0A1874-12	PDF
KT853 Abstract: KT850 KT853A LTR-305D H0A0872-n55 H0A1405-1 h0a2001 MOC70T3 HOA708-1 smd diode 825B Text: Cross Reference Competition Honeywell P/N P/N 100 H 0A0871-N55 50B2-4204 CALL PHOTODIODES, T 0 1 8 T A LL PIN 101 HOA1872-12 BC TR AN S A S S Y . PTX 5082-4205 CALL PHOTODIODES. P P PIN 10501 H 0A 1872-1 BC TRAN S A S S Y , PTX 5082-4207 CALL PHOTODIODES. T 0 1 8 T A LL PIN	OCR Scan	1N5722 1N5723 1N5724 1N5725 1N6264 1N6265 1N6266 2004-90xx 3N24x 24xTX KT853 KT850 KT853A LTR-305D H0A0872-n55 H0A1405-1 h0a2001 MOC70T3 HOA708-1 smd diode 825B	PDF
Untitled Abstract: No abstract text available Text: 5bE D 3030^ GQG12DS 41b » V C T G aA s Infrared Emitting Diodes VT E11 1 3 , 16, 18 TO-46 Lensed Package — 940 nm E G & G VACTEC PACKAGE D IM EN SIO N S inch mm •206 ( S .2 3 ) 1 .0 0 ( 2 5 .4 ) CASE 24 TO-46 HERMETIC (LENSED) CHIP SIZE:.018-x.018-	OCR Scan	GQG12DS 018-x VTE1113 VTE1116 VTE1118	PDF