VTE1113
Abstract: TO46
Text: GaAs Infrared Emitting Diodes VTE1113 TO-46 Lensed Package — 940 nm PACKAGE DIMENSIONS inch mm CASE 24 TO-46 HERMETIC (Lensed) CHIP SIZE: .018" X .018" DESCRIPTION This narrow beam angle TO-46 hermetic emitter contains a large area, double wirebonded, GaAs, 940 nm IRED chip suitable for
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VTE1113
VTE1113
TO46
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Untitled
Abstract: No abstract text available
Text: GaAs Infrared Emitting Diodes VTE1113H TO-46 Lensed Package — 940 nm PACKAGE DIMENSIONS inch mm CASE 24 TO-46 HERMETIC (Lensed) CHIP SIZE: .018" X .018" DESCRIPTION This narrow beam angle TO-46 hermetic emitter contains a large area, double wirebonded, GaAs, 940 nm IRED chip suitable for
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VTE1113H
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VTE1113H
Abstract: No abstract text available
Text: GaAs Infrared Emitting Diodes VTE1113H TO-46 Lensed Package — 940 nm PACKAGE DIMENSIONS inch mm CASE 24 TO-46 HERMETIC (Lensed) CHIP SIZE: .018" X .018" DESCRIPTION This narrow beam angle TO-46 hermetic emitter contains a large area, double wirebonded, GaAs, 940 nm IRED chip suitable for
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VTE1113H
VTE1113H
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C1383 NPN transistor collector base and emitter
Abstract: NPN transistor c1383 C1383 transistor C1383 NPN transistor Light-Dependent Resistor specification c1983 transistor pin configuration of C1383 transistor LHI968 lhi878 c1383
Text: Advanced sensor technologies for today’s breakthrough applications Table of Contents . www.optoelectronics.perkinelmer.com Table of Contents PerkinElmer Optoelectronics provides Digital Imaging, Sensor and Lighting technologies to speed the development of breakthrough applications for customers in biomedical,
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C1383 NPN transistor collector base and emitter
NPN transistor c1383
C1383 transistor
C1383 NPN transistor
Light-Dependent Resistor specification
c1983 transistor
pin configuration of C1383 transistor
LHI968
lhi878
c1383
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VTE1013
Abstract: VTE1113 VTE3322LA VTE3324LA opto127
Text: GaAs Infrared Emitting Diodes VTE1013 TO-46 Flat Window Package — 940 nm PACKAGE DIMENSIONS inch mm CASE 24A TO-46 HERMETIC (Flat Window) CHIP SIZE: .018" X .018" DESCRIPTION This wide beam angle TO-46 hermetic emitter contains a large area, double wirebonded, GaAs, 940 nm IRED chip suitable for higher
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VTE1013
VTE3322LA
VTE3324LA
VTE1013
VTE1113
VTE3322LA
VTE3324LA
opto127
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VTE1063
Abstract: VTE1163 VTE1261 VTE1262 VTE1281-1 VTE1281-2 VTE1281F VTE1281W-1 VTE1281W-2 VTE1285
Text: infrared emitting diodes Features 880 nm • Nine standard packages in hermetic and low-cost epoxy • End- and side-radiating packages • Graded Output • High efficiency GaAIAs, 880 nm LPE process Delivers twice the power of conventional GaAs 940 nm emitters
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VTE7172
VTE7173
VTE1013
VTE1113
VTE3322LA
VTE3324LA
VTE3372LA
VTE3374LA
VTE1063
VTE1163
VTE1261
VTE1262
VTE1281-1
VTE1281-2
VTE1281F
VTE1281W-1
VTE1281W-2
VTE1285
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VTE1116
Abstract: 3030L VTE1113 VTE1118
Text: 5bE T> m 3030^0^ 0001205 G aA s Infrared Emitting Diodes 41b « V C T VT E1 11 3, 16, 18 TO-46 Lensed Package — 940 nm T-q/-// E G & G VACT EC P A C K A G E D IM E N S IO N S inch mm •206 ( 5 .2 3 ) 1 .0 0 ( 2 5 .4 ) .I B B ( 4 .7 B ) ' .1 7 8 ( 4 . 5 2 )
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3030L
VTE1113,
T0-46
018-x
VTE1113
VTE1116
VTE1118
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H0A0872-n55
Abstract: H0A1405-1 H0A0865-L51 h0a1405 HOA708-1 HOA9 til78 phototransistor MOC70T3 ir diode TIL38 H0A1874-12
Text: Cross Reference Cross Reference Competition P/N Honeywell P/N Code Description Competition P/N 100 H0A0871-N55 B TRANS ASSY. PTX 5082-4205 CALL PHOTODIODES. P P P IN 101 H0A1872-12 BC TRANS ASSY. PTX 5082-4207 CALL PHOTODIODES. T018 TALL PIN 10501 H0A1872-1
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1N5722
1N5723
1N5724
1N5725
1N6264
1N6265
1N6266
2004-90xx
2600-70XX
2N5777-80
H0A0872-n55
H0A1405-1
H0A0865-L51
h0a1405
HOA708-1
HOA9
til78 phototransistor
MOC70T3
ir diode TIL38
H0A1874-12
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KT853
Abstract: KT850 KT853A LTR-305D H0A0872-n55 H0A1405-1 h0a2001 MOC70T3 HOA708-1 smd diode 825B
Text: Cross Reference Competition Honeywell P/N P/N 100 H 0A0871-N55 50B2-4204 CALL PHOTODIODES, T 0 1 8 T A LL PIN 101 HOA1872-12 BC TR AN S A S S Y . PTX 5082-4205 CALL PHOTODIODES. P P PIN 10501 H 0A 1872-1 BC TRAN S A S S Y , PTX 5082-4207 CALL PHOTODIODES. T 0 1 8 T A LL PIN
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1N5722
1N5723
1N5724
1N5725
1N6264
1N6265
1N6266
2004-90xx
3N24x
24xTX
KT853
KT850
KT853A
LTR-305D
H0A0872-n55
H0A1405-1
h0a2001
MOC70T3
HOA708-1
smd diode 825B
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Untitled
Abstract: No abstract text available
Text: 5bE D 3030^ GQG12DS 41b » V C T G aA s Infrared Emitting Diodes VT E11 1 3 , 16, 18 TO-46 Lensed Package — 940 nm E G & G VACTEC PACKAGE D IM EN SIO N S inch mm •206 ( S .2 3 ) 1 .0 0 ( 2 5 .4 ) CASE 24 TO-46 HERMETIC (LENSED) CHIP SIZE:.018-x.018-
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GQG12DS
018-x
VTE1113
VTE1116
VTE1118
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