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    Excelitas Technologies Corporation VTE1013H

    Ir Emitter, 940Nm, 4.78Mm, To-46, Though Hole; Viewing Angle:35°; Diode Case Style:To-46; Forward Current If(Av):100Ma; Forward Voltage Vf Max:1.9V; Rise Time:1Μs; Fall Time Tf:1Μs; Operating Temperature Min:-55°C; Product Range:- Rohs Compliant: Yes |Excelitas Tech VTE1013H
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    VTE1013 Datasheets (3)

    Part ECAD Model Manufacturer Description Curated Type PDF
    VTE1013 PerkinElmer Optoelectronics GaAs Infrared Emitting Diode Original PDF
    VTE1013 EG&G HIGH POWER GaAs INFRARED EMITTING DIODES 920nm Scan PDF
    VTE1013 EG&G Vactec GaAs Infrared Emitting Diodes Scan PDF

    VTE1013 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: GaAs Infrared Emitting Diodes VTE1013H TO-46 Flat Window Package — 940 nm PACKAGE DIMENSIONS inch mm CASE 24A TO-46 HERMETIC (Flat Window) CHIP SIZE: .018" X .018" DESCRIPTION This wide beam angle TO-46 hermetic emitter contains a large area, double wirebonded, GaAs, 940 nm IRED chip suitable for higher


    Original     		PDF VTE1013H VTE1013

    VTE1013

    Abstract: VTE1113 VTE3322LA VTE3324LA opto127
    Text: GaAs Infrared Emitting Diodes VTE1013 TO-46 Flat Window Package — 940 nm PACKAGE DIMENSIONS inch mm CASE 24A TO-46 HERMETIC (Flat Window) CHIP SIZE: .018" X .018" DESCRIPTION This wide beam angle TO-46 hermetic emitter contains a large area, double wirebonded, GaAs, 940 nm IRED chip suitable for higher


    Original     		PDF VTE1013 VTE3322LA VTE3324LA VTE1013 VTE1113 VTE3322LA VTE3324LA opto127

    VTE1013

    Abstract: perkin
    Text: GaAs Infrared Emitting Diodes VTE1013 TO-46 Flat Window Package — 940 nm PACKAGE DIMENSIONS inch mm CASE 24A TO-46 HERMETIC (Flat Window) CHIP SIZE: .018" X .018" DESCRIPTION This wide beam angle TO-46 hermetic emitter contains a large area, double wirebonded, GaAs, 940 nm IRED chip suitable for higher


    Original     		PDF VTE1013 Capac100 VTE1013 perkin

    VTE1013H

    Abstract: VTE1013
    Text: GaAs Infrared Emitting Diodes VTE1013H TO-46 Flat Window Package — 940 nm PACKAGE DIMENSIONS inch mm CASE 24A TO-46 HERMETIC (Flat Window) CHIP SIZE: .018" X .018" DESCRIPTION This wide beam angle TO-46 hermetic emitter contains a large area, double wirebonded, GaAs, 940 nm IRED chip suitable for higher


    Original     		PDF VTE1013H VTE1013 VTE1013H VTE1013

    C1383 NPN transistor collector base and emitter

    Abstract: NPN transistor c1383 C1383 transistor C1383 NPN transistor Light-Dependent Resistor specification c1983 transistor pin configuration of C1383 transistor LHI968 lhi878 c1383
    Text: Advanced sensor technologies for today’s breakthrough applications Table of Contents . www.optoelectronics.perkinelmer.com Table of Contents PerkinElmer Optoelectronics provides Digital Imaging, Sensor and Lighting technologies to speed the development of breakthrough applications for customers in biomedical,


    Original     		PDF 10-foot C1383 NPN transistor collector base and emitter NPN transistor c1383 C1383 transistor C1383 NPN transistor Light-Dependent Resistor specification c1983 transistor pin configuration of C1383 transistor LHI968 lhi878 c1383

    VTE1063

    Abstract: VTE1163 VTE1261 VTE1262 VTE1281-1 VTE1281-2 VTE1281F VTE1281W-1 VTE1281W-2 VTE1285
    Text: infrared emitting diodes Features 880 nm • Nine standard packages in hermetic and low-cost epoxy • End- and side-radiating packages • Graded Output • High efficiency GaAIAs, 880 nm LPE process Delivers twice the power of conventional GaAs 940 nm emitters


    Original     		PDF VTE7172 VTE7173 VTE1013 VTE1113 VTE3322LA VTE3324LA VTE3372LA VTE3374LA VTE1063 VTE1163 VTE1261 VTE1262 VTE1281-1 VTE1281-2 VTE1281F VTE1281W-1 VTE1281W-2 VTE1285

    Untitled

    Abstract: No abstract text available
    Text: 5L.E D 3G30bCn GD01204 GaAs Infrared Emitting Diodes VTE1013, 16, 18 TO-46 Flat Window Package - 940 nm E & G G VACTEC T 4H 1 PACKAGE DIMENSIONS inch mm f * SÛT « V C T 1.00 ( 25 .4 ) .154 ( 3 .9 1 ) .140 ( 3 .5 6 ) (0.64) ( 0 .3 8 ) •043 ( 1.0 .0 3 7 ( 0 .9 4 )


    OCR Scan     		PDF 3G30bCn GD01204 VTE1013, VTE1013 VTE1016 VTE1018

    H0A0872-n55

    Abstract: H0A1405-1 H0A0865-L51 h0a1405 HOA708-1 HOA9 til78 phototransistor MOC70T3 ir diode TIL38 H0A1874-12
    Text: Cross Reference Cross Reference Competition P/N Honeywell P/N Code Description Competition P/N 100 H0A0871-N55 B TRANS ASSY. PTX 5082-4205 CALL PHOTODIODES. P P P IN 101 H0A1872-12 BC TRANS ASSY. PTX 5082-4207 CALL PHOTODIODES. T018 TALL PIN 10501 H0A1872-1


    OCR Scan     		PDF 1N5722 1N5723 1N5724 1N5725 1N6264 1N6265 1N6266 2004-90xx 2600-70XX 2N5777-80 H0A0872-n55 H0A1405-1 H0A0865-L51 h0a1405 HOA708-1 HOA9 til78 phototransistor MOC70T3 ir diode TIL38 H0A1874-12

    VTE1016

    Abstract: VTE1013 VTE1018
    Text: S bE D 3030^0^ 0001EG4 GaAs Infrared Emitting Diodes V T E 1 0 1 3 , 16, 18 TO-46 Flat Window Package — 940 nm E G & G SÛT « I V C T VACTEC PACKAGE DIMENSIONS inch mm . 1 5 4 ( 3 .9 1 ) 1.0 0 ( 2 5 . 4 ) CASE 24A TO-46 HERMETIC (FLAT WINDOW) CHIP SIZE:.018’ x .018'


    OCR Scan     		PDF 3030t 0001E04 VTE1013, 018-x VTE1013 VTE1016 VTE1018

    KT853

    Abstract: KT850 KT853A LTR-305D H0A0872-n55 H0A1405-1 h0a2001 MOC70T3 HOA708-1 smd diode 825B
    Text: Cross Reference Competition Honeywell P/N P/N 100 H 0A0871-N55 50B2-4204 CALL PHOTODIODES, T 0 1 8 T A LL PIN 101 HOA1872-12 BC TR AN S A S S Y . PTX 5082-4205 CALL PHOTODIODES. P P PIN 10501 H 0A 1872-1 BC TRAN S A S S Y , PTX 5082-4207 CALL PHOTODIODES. T 0 1 8 T A LL PIN


    OCR Scan     		PDF 1N5722 1N5723 1N5724 1N5725 1N6264 1N6265 1N6266 2004-90xx 3N24x 24xTX KT853 KT850 KT853A LTR-305D H0A0872-n55 H0A1405-1 h0a2001 MOC70T3 HOA708-1 smd diode 825B