12n120
Abstract: TO247AE
Text: MOTOROLA Order this document by MGW12N 120/D SEMICONDUCTOR TECHNICAL DATA Product Preview Data Sheet Insulated G ate Bipolar TVansistor MGW 12N120 N-Channel Enhancement Mode Silicon Gate This Insulated Gate Bipolar Transistor IGBT uses an advanced termination scheme to provide an enhanced and reliable high voltage
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MGW12N
120/D
MGW12N120/D
12n120
TO247AE
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diode lt 238
Abstract: 21N60ED
Text: MOTOROLA Order this document by MGW21 N60ED/D SEMICONDUCTOR TECHNICAL DATA Designer’s Data Sheet M G W 21N 60ED Insulated Gate Bipolar Transistor N-Channel Enhancement-Mode Silicon Gate This Insulated Gate Bipolar Transistor IGBT is co-packaged with a soft recovery u ltra -fa s t rectifier and uses an advanced
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MGW21
N60ED/D
MGW21N60ED/D
diode lt 238
21N60ED
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Untitled
Abstract: No abstract text available
Text: PD - 9.1583A International I R Rectifier IR G 4 P C 5 0 K PR ELIM IN A R Y Short Circuit Rated UltraFast IGBT INSULATED GATE BIPOLAR TRANSISTOR Features • High short circuit rating optimized for motor control, tSc =1 Ops, @ 360V VCE Start , Tj = 125°C,
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485S4S2
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Marking ANs
Abstract: Transistor C 5198 b 514 transistor BFP450
Text: SIEMENS SIEGET 25 BFP 450 NPN Silicon RF Transistor • For medium power amplifiers • Compression point P. 1dB = +19 dBm at 1.8 GHz maximum available gain Gma = 14 dB at 1.8 GHz Noise figure F = 1.25 dB at 1.8 GHz • Transition frequency fT = 24 GHz • Gold metalization for high reliability
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Q62702-F1590
OT-343
Marking ANs
Transistor C 5198
b 514 transistor
BFP450
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Untitled
Abstract: No abstract text available
Text: I . I P D -5038 International I@R Rectifier CPV 363M 4F preliminary IGBT SIP MODULE Features • • • • Fast IGBT Fully isolated printed circuit board mount package Switching-loss rating includes all "tail” losses HEXFRED soft ultrafast diodes Optimized for medium operating 1 to 10 kHz
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360Vdc,
S5452
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RTO BH
Abstract: No abstract text available
Text: PD - 9 .1 6 2 0 International I R Rectifier PRELIMINARY INSULATED GATE BIPOLAR TRANSISTOR IRG4BC20K-S Short Circuit Rated _ UltraFast IGBT Features • High short circuit rating optimized for motor control, tsc =10ps, @ 3 60 V VCE start , T j = 125°C,
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IRG4BC20K-S
RTO BH
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G4PC40
Abstract: g4pc40f G4PC4 G4PC
Text: International IG R Rectifier PD - 9.1463A IRG4PC40F PRELIMINARY Fast Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR Features • Fast: Optimized for medium operating frequencies 1-5 kHz in hard switching, >20 kHz in resonant mode . • Generation 4 IGBT design provides tighter
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IRG4PC40F
O-247AC
G4pc40f,
G4PC40
g4pc40f
G4PC4
G4PC
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Untitled
Abstract: No abstract text available
Text: MOTOROLA Order thle document by MHPM7B12A120A/D SEMICONDUCTOR TECHNICAL DATA MHPM7B12A120A Hybrid Power Module Motorola Pwfttrod Dovtco Integrated Power Stage for 2.0 hp Motor Drives This module Integrates a 3-phase Input rectifier bridge, 3-phase output Inverter and brake transistor/diode In a single convenient package. The output
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MHPM7B12A120A/D
MHPM7B12A120A
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IRGPC46
Abstract: 10a 100v bipolar transistor mosfet induction heater S101 SS452 VQE 21 d
Text: INTERNATIONAL RECTIFIER 4055452 OOlOba? 2 2bE D Data Sheet No. PD-9.663 INSULATED GATE BIPOLAR TRANSISTOR T- 3 °[ -03 International g*»]Rectifier IRGPC46 BOOV, BO A FEATURES 600V, 60A, TO-247AC IGBT International Rectifier’s IRG series of Insulated Gate
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O-247AC
IRGPC46
10a 100v bipolar transistor
mosfet induction heater
S101
SS452
VQE 21 d
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BF 914 transistor
Abstract: transistor R 405 transistor bf 405 transistor 1546 405 marking transistor s parameters noise transistor BF 914
Text: SIEMENS SIEGET 25 BFP 405 NPN Silicon RF Transistor • For low current applications • For oscillators up to 12 GHz • Noise figure F = 1.15 dB at 1.8 GHz outstanding Gms = 22 dB at 1.8 GHz • Transition frequency f j = 25 GHz • Gold metalization for high reliability
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Q62702-F1592
OT-343
BF 914 transistor
transistor R 405
transistor bf 405
transistor 1546
405 marking
transistor s parameters noise
transistor BF 914
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IGBT 500V 50A
Abstract: "Power Diode" 500V 50A
Text: International m l Rectifier Provisional Data Sheet P D -9 .1155 IRGTIN050M06 Low conduction loss IG BT "HALF-BRIDGE" IG B T INT-A-PAK V Œ = 6 00V lc = 50A V ce O N < 2 ,O V • Rugged Design • Simple gate-drive • Switching-Loss Rating includes all "tail"
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IRGTIN050M06
C-444
IGBT 500V 50A
"Power Diode" 500V 50A
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Untitled
Abstract: No abstract text available
Text: P D - 9.1586 International IOR Rectifier 4 30 S IRG PC PRELIMINARY Standard Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR Features • Standard: Optimized for minimum saturation voltage and low operating frequencies < 1kHz • Generation 4 IGBT design provides tighter
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O-247AC
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Untitled
Abstract: No abstract text available
Text: CA3146, CA3146A, CA3183, CA3183A Semiconductor September 1998 File Number High-Voltage Transistor Arrays Features T h e C A 3 1 4 6 A , C A 3 1 4 6 , C A 3 1 8 3 A , and C A 3 1 8 3 are g en eral • M atc h e d G e n e ra l P u rp o s e Transistors p urpo se high voltage silicon N P N transistor arrays on a
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CA3146,
CA3146A,
CA3183,
CA3183A
CA3183
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79lc
Abstract: No abstract text available
Text: International IOR Rectifier PD -5.039 CPV363M 4U PRELIMINARY IGBT SIP MODULE UltraFast IGBT Features • • • • Fully isolated printed circuit board mount package Switching-loss rating includes all "tail" losses HEXFRED soft ultrafast diodes Optimized for high operating frequency over 5kHz
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CPV363M
79lc
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Untitled
Abstract: No abstract text available
Text: International HüRectifier PD - 5.023B CPV363MF Fast IGBT IGBT SIP MODULE Features • Fully isolated printed circuit board mount package • Switching-loss rating includes all "tail" losses • HEXFRED soft ultrafast diodes • Optimized for medium operating frequency 1 to
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CPV363MF
10kHz)
360Vdc,
C-156
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Untitled
Abstract: No abstract text available
Text: International i“RjRectifier PD - 9.1297 IRGPC60M PRELIMINARY INSULATED GATE BIPOLAR TRANSISTOR Short Circuit Rated Fast IGBT Features c • Short circuit rated - 10|js @ 125°C, Vqe = 15V • Switching-loss rating includes all "tail" losses • Optimized for medium operating frequency 1 to 10kHz
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IRGPC60M
10kHz)
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SAA 1041
Abstract: No abstract text available
Text: IXGB16N60R2 VCES IC25 Dual Independent IGBTs and Diodes in Power SIP V CE sat = 600 V = 16 A = 2.5 V Power SIP Advanced data Maximum Ratings Symbol Test Conditions vCES vCGR vGES vGEM Tj = 25°C to 150°C *C25 ^C60 u ^CM Tc = 25°C 16 Tc = 60°C 12 SSOA (RBSOA)
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IXGB16N60R2
4bflb22b
SAA 1041
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Untitled
Abstract: No abstract text available
Text: International I R Rectifier pd-9.m65a IRG4 PC4 0 S PRELIMINARY INSULATED GATE BIPOLAR TRANSISTOR Standard Speed IGBT Features • Standard: Optimized for minimum saturation voltage and low operating frequencies < 1kHz • Generation 4 IGBT design provides tighter
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O-247AC
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Untitled
Abstract: No abstract text available
Text: 4bE D • b3b72S4 aOTERôl 1 ■HOTt"T=33-l"] MOTOROLA SC CXSTRS/R F MOTOROLA SEMICONDUCTOR! TECHNICAL DATA 2C6193HV Chip PNP Silicon Medium-Power Transistor DMO JfJr.ji Utfuf . .for use in switching and wide-band amplifier applications. DÌSCTG tG • Saturation Voltage — 1.2 Vdc @ 5.0 Ade
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b3b72S4
2C6193HV
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G4PC30F
Abstract: G4PC30 g4pc st igbt driver bt 13b S/BIP/SCB345100/B/30/G4PC30F
Text: International TOR Rectifier PD - 9.1459A PRELIMIN IRG4PC30F INSULATED GATE BIPOLAR TRANSISTOR Fast Speed IGBT Features • Fast: O ptim ized fo r m edium operating frequencies 1-5 kHz in hard sw itching, >20 kH z in resonant m ode . • G eneration 4 IG BT design provides tig hte r
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IRG4PC30F
O-247AC
O-247AC
G4pc30f,
G4PC30F
G4PC30
g4pc
st igbt driver
bt 13b
S/BIP/SCB345100/B/30/G4PC30F
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Untitled
Abstract: No abstract text available
Text: | , ,• I P D -5041 International IS2R Rectifier CPV364M 4U preliminary IGBT SIP MODULE Features • • • • UltraFast IGBT Fully isolated printed circuit board mount package Switching-loss rating includes all "tail" losses HEXFRED soft ultrafast diodes
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CPV364M
360Vdc,
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g4pc50fd
Abstract: g4pc50 g4pc50f g4p-c50 g4pc IRG4PC50FD IRG4PC50F
Text: International IGR Rectifier PD 9.1469A IRG4PC50FD PRELIMINARY INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features Fast CoPack IGBT • Fast: Optimized for medium operating frequencies 1 -5 kHz in hard switching, >20 kHz in resonant mode .
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IRG4PC50FD
O-247AC
g4pc50fd,
g4pc50fd
g4pc50
g4pc50f
g4p-c50
g4pc
IRG4PC50FD
IRG4PC50F
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Untitled
Abstract: No abstract text available
Text: PD - 9.1463A International I R Rectifier IRG4PC40F PRELIMINARY Fast Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR Features • Fast: O ptim ized for medium operating frequencies 1 -5 kHz in hard switching, >20 kH z in resonant mode . • Generation 4 IGBT design provides tighter
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IRG4PC40F
-247A
S5452
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Untitled
Abstract: No abstract text available
Text: PD 9.1453A International IO R Rectifier IRG4BC30UD PRELIMINARY INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features UltraFast CoPack IGBT • UltraFast: Optimized for high operating frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode
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IRG4BC30UD
T0-220AB
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