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    MGW12N Search Results

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    MGW12N Price and Stock

    Rochester Electronics LLC MGW12N120D

    TRANS IGBT CHIP N-CH 1.2KV 20A
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    DigiKey MGW12N120D Bulk 109
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    onsemi MGW12N120

    - Bulk (Alt: MGW12N120)
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    Avnet Americas MGW12N120 Bulk 4 Weeks 1
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    Rochester Electronics MGW12N120 37 1
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    onsemi MGW12N120D

    - Bulk (Alt: MGW12N120D)
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    Avnet Americas MGW12N120D Bulk 4 Weeks 131
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    Newark MGW12N120D Bulk 140
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    Rochester Electronics MGW12N120D 540 1
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    Motorola Mobility LLC MGW12N120D

    Trans IGBT Chip N-CH 1.2KV 20A 3-Pin(3+Tab) TO-247 '
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    Rochester Electronics MGW12N120D 3 1
    • 1 $2.8
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    MGW12N Datasheets (18)

    Part ECAD Model Manufacturer Description Curated Type PDF
    MGW12N120 Motorola IGBT IN TO-247 12 A at 90°C, 20 A at 25°C 1200 VOLTS SHORT CIRCUIT RATED Original PDF
    MGW12N120 Motorola Bipolar Transistor, Insulated Gate Bipolar Transistor N-Channel Enhancement-Mode Silicon Gate Original PDF
    MGW12N120 On Semiconductor Insulated Gate Bipolar Transistor N-Channel Original PDF
    MGW12N120 On Semiconductor IGBT Chip, N Channel, 1200V, TO-247AE, 3-Pin Original PDF
    MGW12N120/D Motorola IGBT IN TO-47 12 A Original PDF
    MGW12N120/D Motorola IGBT IN TO-47 12 A Original PDF
    MGW12N120D Motorola Bipolar Transistor, Insulated Gate Bipolar Transistor with Anti-Parallel Diode N-Channel Enhancement-Mode Silicon Gate Original PDF
    MGW12N120D Motorola Insulated Gate Bipolar Transistor with Anti-Parallel Diode Original PDF
    MGW12N120D On Semiconductor Insulated Gate Bipolar Transistor with Anti-Parallel Diode N-Channel Original PDF
    MGW12N120D On Semiconductor IGBT Chip, N Channel, 1200V, TO-247AE, 3-Pin Original PDF
    MGW12N120-D On Semiconductor Insulated Gate Bipolar Transistor N-Channel Enhanc Original PDF
    MGW12N120D/D Motorola IGBT IN TO-47 12 A Original PDF
    MGW12N120D/D Motorola IGBT & DIODE IN D3PAK 12 A Original PDF
    MGW12N120D-D On Semiconductor Insulated Gate Bipolar Transistor with Anti-Parall Original PDF
    MGW12N120DG On Semiconductor IGBT Chip: N Channel: 1200V: TO-247AE: 3-Pin Original PDF
    MGW12N120E Motorola Enhancement-Mode Silicon Gate Original PDF
    MGW12N120E/D Motorola IGBT IN TO-47 12 A Original PDF
    MGW12N120G On Semiconductor IGBT Chip: N Channel: 1200V: TO-247AE: 3-Pin Original PDF

    MGW12N Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    transistor d 1557

    Abstract: MGW12N120
    Text: MOTOROLA Order this document by MGW12N120/D SEMICONDUCTOR TECHNICAL DATA Designer's  Data Sheet MGW12N120 Insulated Gate Bipolar Transistor Motorola Preferred Device N–Channel Enhancement–Mode Silicon Gate This Insulated Gate Bipolar Transistor IGBT uses an advanced


    Original     		PDF MGW12N120/D MGW12N120 MGW12N120/D* TransistorMGW12N120/D transistor d 1557 MGW12N120

    tme 126

    Abstract: MGW12N120 IC9012 Bipolar WPC
    Text: MOTOROLA SEMICONDUCTOR = TECHNICAL DATA Insulated Gate Bipolar Transistor N-Channel Enhancement-Mode Silicon Gate MGW12N120 This Insulated Gate Bipolar Transistor IGBT uses an advanced termination scheme to provide an enhanced and reliable high voltage-blocking capability.


    Original     		PDF MGW12N120 O-247 10USminimum tme 126 MGW12N120 IC9012 Bipolar WPC

    tme 126

    Abstract: transistor TT 2442 MGW12N120D 3EML
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL Order this document by MGW12N120D/D DATA e Product Preview Data Sheet Insulated Gate BipoMar Transistor with Anti-Parallel Diode N-Channel Enhancement Mode Silicon Gate Ttis Insulated Gate Bipolar Transistor lGB~ is cqackaged


    Original     		PDF MGW12N120D/D MGW12N120DID tme 126 transistor TT 2442 MGW12N120D 3EML

    MGW12N120D

    Abstract: No abstract text available
    Text: MOTOROLA Order this document by MGW12N120D/D SEMICONDUCTOR TECHNICAL DATA Designer's Data Sheet Insulated Gate Bipolar Transistor with Anti-Parallel Diode MGW12N120D Motorola Preferred Device N–Channel Enhancement–Mode Silicon Gate IGBT & DIODE IN TO–247


    Original     		PDF MGW12N120D/D MGW12N120D MGW12N120D

    MGW12N120D

    Abstract: No abstract text available
    Text: MOTOROLA Order this document by MGW12N120D/D SEMICONDUCTOR TECHNICAL DATA  Data Sheet Insulated Gate Bipolar Transistor with Anti-Parallel Diode Designer's MGW12N120D Motorola Preferred Device N–Channel Enhancement–Mode Silicon Gate IGBT & DIODE IN TO–247


    Original     		PDF MGW12N120D/D MGW12N120D MGW12N120D

    motorola 039 31

    Abstract: MGW12N120 MGW12N
    Text: MOTOROLA Order this document by MGW12N120/D SEMICONDUCTOR TECHNICAL DATA Designer's  Data Sheet MGW12N120 Insulated Gate Bipolar Transistor Motorola Preferred Device N–Channel Enhancement–Mode Silicon Gate This Insulated Gate Bipolar Transistor IGBT uses an advanced


    Original     		PDF MGW12N120/D MGW12N120 motorola 039 31 MGW12N120 MGW12N

    Transistor motorola 418

    Abstract: mosfet amp ic MGW12N120D 305 Power Mosfet MOTOROLA 305 Mosfet MOTOROLA Motorola 720 transistor
    Text: MOTOROLA Order this document by MGW12N120D/D SEMICONDUCTOR TECHNICAL DATA  Data Sheet Insulated Gate Bipolar Transistor with Anti-Parallel Diode Designer's MGW12N120D Motorola Preferred Device N–Channel Enhancement–Mode Silicon Gate IGBT & DIODE IN TO–247


    Original     		PDF MGW12N120D/D MGW12N120D MGW12N120D/D* Transistor motorola 418 mosfet amp ic MGW12N120D 305 Power Mosfet MOTOROLA 305 Mosfet MOTOROLA Motorola 720 transistor

    A 720 transistor

    Abstract: MGW12N120D
    Text: MOTOROLA -SEMICONDUCTOR TECHNICAL DATA Advance information DataSheet MGW12N120D Insulated Gate Bipolar Transistor with Anti-Parallel Diode N-Channel Enhancement-Mode Silicon Gate This high voltage Insulated Gate Bipolar Transistor IGBT is co-packaged with a


    Original     		PDF MGW12N120D O-247 A 720 transistor MGW12N120D

    TO247AE

    Abstract: MGW12N120E 25C09
    Text: MOTOROLA Order this document by MGW12N120E/D SEMICONDUCTOR TECHNICAL DATA Preliminary Information MGW12N120E Insulated Gate Bipolar Transistor N–Channel Enhancement–Mode Silicon Gate This Insulated Gate Bipolar Transistor IGBT uses an advanced termination scheme to provide an enhanced and reliable high


    Original     		PDF MGW12N120E/D MGW12N120E TO247AE MGW12N120E 25C09

    motorola 039 31

    Abstract: 039 E 31 motorola MGW12N120
    Text: MOTOROLA Order this document by MGW12N120/D SEMICONDUCTOR TECHNICAL DATA Designer's Data Sheet Insulated Gate Bipolar Transistor MGW12N120 Motorola Preferred Device N–Channel Enhancement–Mode Silicon Gate This Insulated Gate Bipolar Transistor IGBT uses an advanced


    Original     		PDF MGW12N120/D MGW12N120 IGBTMGW12N120/D motorola 039 31 039 E 31 motorola MGW12N120

    MC68B21CP

    Abstract: xcm916x1cth16 transistor marking code 12W SOT-23 sg379 MC68B54P XC68HC805P18CDW mc68b50cp MC2830 NE555N CHN NE555N
    Text: SG379/D REV 7 Semiconductor Products Sector NORTH AMERICA SALES AND DISTRIBUTION PRICE LIST THIS BOOK IS IN COMPUTER SORT PRODUCT CLASSIFICATION – Please see General Information Section 1.3 EFFECTIVE DATE: JANUARY 10, 1998 General Information 1 Cross References


    Original     		PDF SG379/D 1N965BRL ZEN15V 1N751AS 1N967BRL ZEN18V 1N751ASRL 1N968BRL ZEN20V MC68B21CP xcm916x1cth16 transistor marking code 12W SOT-23 sg379 MC68B54P XC68HC805P18CDW mc68b50cp MC2830 NE555N CHN NE555N

    STR-G6551

    Abstract: STR-F6654 g6551 TDA16822 STR-F6653 strg6551 IGBT cross reference KA5M0565R TOP224Y equivalent BUP 312
    Text: Cross Reference, V1.0, Apr. 2002 Alphanumerical Cross Reference CoolMOSTM/IGBT/EmConTM/CoolSETTM Power Management & Supply N e v e r s t o p t h i n k i n g . Alphanumerical Cross Reference Revision History: 2002-04 V1.0 Previous Version: Page Subjects major changes since last revision


    Original     		PDF 2002-Sep. STR-G6551 STR-F6654 g6551 TDA16822 STR-F6653 strg6551 IGBT cross reference KA5M0565R TOP224Y equivalent BUP 312

    transistor mosfet buv18a

    Abstract: M143206EVK MMBF4856 lm358 IC 68hc05sc24 telephone line interface circuit bc517 MC68B54 XC68HC705P9 MPX100ap BUV18A
    Text: Device Index and Subject Index In Brief . . . Page Device Index . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7.1–1 General Index . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7.2–1 Subject Index . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7.2–9


    Original     		PDF

    mgb20n40cl

    Abstract: MGB20N40 MGB20N35CL MTD1N60E1 motorola automotive transistor coil ignition MTSF3N03HD MGW12N120 Motorola Master Selection Guide MTD20N06HD MTD20N06V
    Text: TMOS Power MOSFETs Products In Brief . . . Motorola continues to build a world class portfolio of TMOS Power MOSFETs with new advances in silicon and packaging technology. The following new advances have been made in the area of silicon technology. • New high voltage devices with voltages up to


    Original     		PDF smalles40F MGP5N60E MGP20N60 MGW20N60D MGW30N60 MGY30N60D MGY40N60 MGY40N60D MGW12N120 MGW12N120D mgb20n40cl MGB20N40 MGB20N35CL MTD1N60E1 motorola automotive transistor coil ignition MTSF3N03HD MGW12N120 Motorola Master Selection Guide MTD20N06HD MTD20N06V

    SKIIP 33 nec 125 t2

    Abstract: skiip 613 gb 123 ct RBS 6302 ericsson SKIIP 513 gb 173 ct THERMISTOR ml TDK 150M pioneer PAL 010a Project Report of smoke alarm using IC 555 doc SKiip 83 EC 125 T1 ericsson RBS 6000 series INSTALLATION MANUAL Ericsson Installation guide for RBS 6302
    Text: Discontinued and Superseded Stock Number History. This document contains Discontinued and Superseded Stock Number History. The information is listed in the following format: Stock Number: The original RS Stock Number of the item. Brief Description: The Invoice Description of the item.


    Original     		PDF 734TL UWEB-MODEM-34 HCS412/WM TLV320AIC10IPFB 100MB NEON250 GA-60XM7E BLK32X40 BLK32X42 SKIIP 33 nec 125 t2 skiip 613 gb 123 ct RBS 6302 ericsson SKIIP 513 gb 173 ct THERMISTOR ml TDK 150M pioneer PAL 010a Project Report of smoke alarm using IC 555 doc SKiip 83 EC 125 T1 ericsson RBS 6000 series INSTALLATION MANUAL Ericsson Installation guide for RBS 6302

    SSP35n03

    Abstract: bc417 ksh200 equivalent 2N5457 equivalent ss8050 equivalent 1N34 equivalent FQP50N06 equivalent bd139 equivalent 2N5458 equivalent 2N3563 equivalent
    Text: Cross Reference Guide Industry 1.5KE100A 1.5KE100CA 1.5KE10A 1.5KE10CA 1.5KE110A 1.5KE110CA 1.5KE11A 1.5KE11CA 1.5KE120A 1.5KE120CA 1.5KE12A 1.5KE12CA 1.5KE130A 1.5KE130CA 1.5KE13A 1.5KE13CA 1.5KE150A 1.5KE150CA 1.5KE15A 1.5KE15CA 1.5KE160A 1.5KE160CA 1.5KE16A


    Original     		PDF 5KE100A 5KE100CA 5KE10A 5KE10CA 5KE110A 5KE110CA 5KE11A 5KE11CA 5KE120A 5KE120CA SSP35n03 bc417 ksh200 equivalent 2N5457 equivalent ss8050 equivalent 1N34 equivalent FQP50N06 equivalent bd139 equivalent 2N5458 equivalent 2N3563 equivalent

    TRANSISTOR MOTOROLA MAC 223

    Abstract: MRF9282 MRF1510 triac MAC 97 AB MSB81T1 solid state 220 volt stabilizer circuit MHW8272 MRF9242 10 amp igbt 1000 volt 100 amp 1200 volt Triac
    Text: NEW PRODUCT CALENDAR and KEY FOCUS PRODUCTS 3Q96 CALCPSTG/D REV 8 This quarterly folder includes information on products by the Communications, Power and Signal Technologies Group CPSTG , which comprises four organizations. These organizations are the RF Semiconductor Division, specializing in low power and high power discrete transistors, hybrid circuits for power amplifiers (modules),


    Original     		PDF

    Untitled

    Abstract: No abstract text available
    Text: MOTOROLA Order this document by MGW12N120D/D SEMICONDUCTOR TECHNICAL DATA D esigner’s Data Sheet M G W 12N 120D Insulated Gate Bipolar Transistor with Anti-Parallel Diode Motorola Preferred Device N-Channel Enhancement-Mode Silicon Gate IGBT & DIODE IN T O -2 4 7


    OCR Scan     		PDF MGW12N120D/D

    12n120

    Abstract: TO247AE
    Text: MOTOROLA Order this document by MGW12N 120/D SEMICONDUCTOR TECHNICAL DATA Product Preview Data Sheet Insulated G ate Bipolar TVansistor MGW 12N120 N-Channel Enhancement Mode Silicon Gate This Insulated Gate Bipolar Transistor IGBT uses an advanced termination scheme to provide an enhanced and reliable high voltage


    OCR Scan     		PDF MGW12N 120/D MGW12N120/D 12n120 TO247AE

    Untitled

    Abstract: No abstract text available
    Text: MOTOROLA Order this document by MGW12N120D/D SEMICONDUCTOR TECHNICAL DATA Designer’s Data Sheet M G W 12N 120D In su late d G ate Bipolar T ransistor w ith A n ti-P aralle l Diode Motorola Preferred Device N-Channel Enhancement-Mode Silicon Gate IGBT & DIODE IN T O -2 4 7


    OCR Scan     		PDF MGW12N120D/D

    Untitled

    Abstract: No abstract text available
    Text: MOTOROLA Order this document by MGW12N120/D SEMICONDUCTOR TECHNICAL DATA D esigner’s Data Sheet MGW 12N120 In su late d G ate Bipolar T ransistor Motorola Preferred Device N-Channel Enhancement-Mode Silicon Gate This Insulated Gate Bipolar Transistor IGBT uses an advanced


    OCR Scan     		PDF MGW12N120/D 12N120

    Untitled

    Abstract: No abstract text available
    Text: MOTOROLA Order this document by MGW12N120E/D SEMICONDUCTOR TECHNICAL DATA Preliminary Information MGW12N120E In su late d G ate Bipolar T ransistor N-Channel Enhancement-Mode Silicon Gate T his Insulated G ate B ip olar T ra n sisto r IG BT uses an advanced


    OCR Scan     		PDF MGW12N120E/D

    150 nJ

    Abstract: No abstract text available
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Designer’s Data Sheet MGW12N120 Insulated G ate Bipolar Transistor Motorola Preferred Device N-Channel Enhancement-Mode Silicon Gate This Insulated Gate Bipolar Transistor IGBT uses an advanced termination scheme to provide an enhanced and reliable high


    OCR Scan     		PDF O-247 MGW12N120 150 nJ

    ignition IGBTS

    Abstract: 05n60 MHPM7B16A120B MHPM7B8A120A MHPM7A P15N MSH860 MGP7N60E
    Text: Chapter Four Data Sheets Table of Contents Page Page Motor Control IGBTs Power Modules MGP4N60E .4-2 MGP7N60E .4-6


    OCR Scan     		PDF MGP4N60E MGP7N60E MGP11N60E MGP14N60E MGP21N60E MGP11N60ED MGP2N60D MGS05N60D MGS13002D. 05N60D. ignition IGBTS 05n60 MHPM7B16A120B MHPM7B8A120A MHPM7A P15N MSH860 MGP7N60E