Untitled
Abstract: No abstract text available
Text: □IXYS IXGB16N60R2 Dual Independent IGBTs and Diodes in Power SIP VCES C25 VCE sat i J Advanced data = 600 V = 16 A = 2.5 V 'I I I1 ' •! i : I; ■ ' 1 2 3 4 5 6 7 8 9 10 11 12 Maximum Ratings Symbol Test Conditions V CES Tj = 25°C to 150°C 600 V V CGR
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IXGB16N60R2
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IXGB16N60R2
Abstract: A2 082
Text: IXGB16N60R2 VC E S IC25 Dual Independent IGBTs and Diodes in Power SIP = 600 V = 16 A V CE sat = 2.5 V Power SIP Advanced data Symbol Maximum Ratings Test Conditions v CES Td = 25°C to 150°C 600 V V"CG R Tj = 25°C to 150°C; RGE = 1 MO 600 V v GES Continuous
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IXGB16N60R2
00V-1
flb22b
DD02245
000224b
A2 082
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SAA 1041
Abstract: No abstract text available
Text: IXGB16N60R2 VCES IC25 Dual Independent IGBTs and Diodes in Power SIP V CE sat = 600 V = 16 A = 2.5 V Power SIP Advanced data Maximum Ratings Symbol Test Conditions vCES vCGR vGES vGEM Tj = 25°C to 150°C *C25 ^C60 u ^CM Tc = 25°C 16 Tc = 60°C 12 SSOA (RBSOA)
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IXGB16N60R2
4bflb22b
SAA 1041
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30n50 mosfet
Abstract: DSE119-06AS VM0400-02F MCC SMD DIODE 300-06DA smd43 35-06AS 500-06DA 250-12DA mosfet p channel
Text: Contents Insulated Gate Bipolar Transistors IGBT Package style vCES Tc = 2S°C 2. TO-247 SMD 1a. TO-263AA 2a. TO-247 SMD Page A V 1 600 20 48 3.0 2.7 3 600 60 2.5 2 600 75 2.7 1 600 20 20 2.5 3.0 600 48 60 60 2.7 2.9 2.5 600 16 25 16 2.5 600 48 2.7 7 600
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O-263
O-263AA
O-247
IXGA10N60A
IXGA24N60A
IXGH32N60B
IXGH50N60AS
IXGA10N60U1
30n50 mosfet
DSE119-06AS
VM0400-02F
MCC SMD DIODE
300-06DA
smd43
35-06AS
500-06DA
250-12DA
mosfet p channel
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