OCT9600
Abstract: mobile switching center (msc) Mobile Switch Center MSC
Text: O OC C T 9 6 0 0 SS ee rr ii ee ss Voice Quality/Echo Cancellation Modules Increasing system density while improving voice quality The OCT9600 Series of voice processor modules performs high quality echo cancellation and Voice Quality Enhancements VQE at extremely
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OCT9600
OCT9600pb2000-022
mobile switching center (msc)
Mobile Switch Center MSC
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A0937
Abstract: 1N4532 at-614 1N3600 1N4148-1 JANTXV 1N4148UR-1 1N4148-1 1N4148-1 JAN 1N4531UR JANTX 1N4148-1
Text: DEFENSE LOGISTICS AGENCY DEFENSE SUPPLY CENTER, COLUMBUS POST OFFICE BOX 3990 COLUMBUS, OH 43218-3990 IN REPLY REFER DSCC-VQ VQE-1 o-019452/Mr. December 18, 2009 Deslich/614-692-0593/bpd TO SUBJECT: Notification of Qualification, MIL-PRF-19500N, FSC 5961
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o-019452/Mr.
Deslich/614-692-0593/bpd)
MIL-PRF-19500N,
1N4148-1
A0937
1N4532
at-614
1N3600
1N4148-1 JANTXV
1N4148UR-1
1N4148-1 JAN
1N4531UR
JANTX 1N4148-1
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2SA562TM
Abstract: 2SC1959
Text: TOSHIBA 2SA562TM TOSHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE PCT PROCESS 2SA562TM AUDIO FREQUENCY LOW POWER AMPLIFIER APPLICATIONS DRIVER STAGE AMPLIFIER APPLICATIONS SWITCHING APPLICATIONS • Excellent hjpg Linearity. hpE (2) = 25 (Min.) at VqE = —6V, Iq = —400mA
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2SA562TM
-400mA
2SC1959.
2SA562TM
2SC1959
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2SA1300
Abstract: No abstract text available
Text: TOSHIBA 2SA1300 2 S A 1 300 TOSHIBA TRANSISTOR STROBO FLASH APPLICATIONS SILICON PNP EPITAXIAL TYPE PCT PROCESS Unit in mm M EDIUM PO W ER AM PLIFIER APPLICATIONS • High DC Current Gain and Excellent hEE Linearity : hFE (1) = 140-600 (Vqe = - IV, Iq = -0.5A)
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2SA1300
961001EAA2'
2SA1300
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m14 transistor
Abstract: ca3146 AN5296 Application of the CA3018 Integrated an5296 3183a CA3183 CA31B "an5296 Application of the CA3018" ca3083 "Application of the CA3018"
Text: s e m ic o n CA3146, CA3146A, CA3183, CA3183A d y ,e « rt « High-Voltage Transistor Arrays August 1996 Features Description • Matched General Purpose Transistors - Vqe Max) • Operation from DC to 120MHz (CA3146, CA3146A)
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CA3146,
CA3146A,
CA3183,
CA3183A
CA3183A,
CA3183
CA3146A
CA3146
m14 transistor
AN5296 Application of the CA3018 Integrated
an5296
3183a
CA31B
"an5296 Application of the CA3018"
ca3083
"Application of the CA3018"
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5842s
Abstract: 5841A
Text: ABSOLUTE MAXIMUM RATINGS at 25°C Free-Air Temperature Output Voltage, Vqe UCN5841A& A5841SLW . 50 V (UCN5842A & A5842SLW ). 80 V Output Voltage, V C e ( su s ) (UCN5841A & A5841SLW) . . . . 35 V f (UCN5842A & A5842SLW) . . . . 50 V f Logic Supply Voltage Range,
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UCN5841A
UCN5842A
5841/42A
5841/42S
A5841SLW
5842SLW
5842s
5841A
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C965 transistor
Abstract: transistor c965 transistor c964
Text: PD - 5.032 International S» ]Rectifier CPV362MK IGBT SIP MODULE Features Short Circuit Rated UltraFast IGBT • Short Circuit Rated - 10ps @ 125°C, Vqe = 15V Fully isolated printed circuit board mount package • Switching-loss rating includes all "tail" losses
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CPV362MK
360Vdc,
C-970
C965 transistor
transistor c965
transistor c964
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C311 Transistor
Abstract: TRANSISTOR C309 transistor c308 c309 transistor
Text: P D - 9.1072 bitemational jorJRectifier IRGBC30M INSULATED GATE BIPOLAR TRANSISTOR Short Circuit Rated Fast IGBT Features • Short circuit rated - 10ps @ 125°C, Vqe = 15V • Switching-loss rating includes all “tail" losses • Optimized for medium operating frequency 1 to
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10kHz)
IRGBC30M
C-311
TQ-220AB
C-312
C311 Transistor
TRANSISTOR C309
transistor c308
c309 transistor
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Untitled
Abstract: No abstract text available
Text: bitemational ^Rectifier PD - 9.1073 IRGBC40K INSULATED GATE BIPOLAR TRANSISTOR Short Circuit Rated UltraFast IGBT Features • Short circuit rated - 10ps @ 125°C, Vqe = 15V • Switching-loss rating includes all "tail" losses • Optimized for high operating frequency over 5kHz
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IRGBC40K
application002Gb43
TQ-220AB
C-854
4A55455
G020b44
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c839 transistor
Abstract: c838 transistor transistor C839 C838 TRANSISTOR c842 C839 C842 C837 VQE 21 d C839 H
Text: htemational S Rectifier P D -9.1128 IRGBC20K INSULATED GATE BIPOLAR TRANSISTOR Short Circuit Rated UltraFast IGBT Features • Short circuit rated - 10ps @ 125°C, Vqe = 15V • Switching-loss rating includes all 'tail1' losses • Optimized for high operating frequency over 5kHz
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IRGBC20K
O-22QAB
C-842
c839 transistor
c838 transistor
transistor C839
C838
TRANSISTOR c842
C839
C842
C837
VQE 21 d
C839 H
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transistor c900
Abstract: transistor c904 transistor c903 c901 transistor transistor c902 C897 c898 TRANSISTOR C898 c902 C901
Text: International [TOR]Rectifier P D - 9.1105 IRGBC20KD2 Short Circuit Rated UltraFast CoPack IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features VcES = 600V • Short circuit rated -10ps @125°C, Vqe = 15V • Switching-loss rating includes all 'tail" losses
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-10ps
IRGBC20KD2
C-903
TQ-220AB
C-904
transistor c900
transistor c904
transistor c903
c901 transistor
transistor c902
C897
c898 TRANSISTOR
C898
c902
C901
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transistor c925
Abstract: smd transistor c928 transistor c923 c927 diode c928 DIODE C921 transistor smd qe c924 diode smd qe C925
Text: P D - 9.1142 bitemational [«»IRectifier IRGBC30KD2-S Short Circuit Rated UltraFast CoPack IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features Ie • Short circuit rated -1 Ops @125°C, VqE= 15V • Switching-loss rating includes all "tail" losses
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IRGBC30KD2-S
C-927
SMD-220
C-928
transistor c925
smd transistor c928
transistor c923
c927
diode c928
DIODE C921
transistor smd qe
c924
diode smd qe
C925
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IOR 450 M
Abstract: c468 c467 c463 TRANSISTORS 640 JS
Text: International S Rectifier P D - 9.1137 IRGPH20M INSULATED GATE BIPOLAR TRANSISTOR Short Circuit Rated Fast IGBT Features • Short circuit rated - 10 js @ 125°C, Vqe = 15V • Switching-loss rating includes all "tail" losses • Optimized for medium operating frequency (1 to
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10kHz)
IRGPH20M
sho50
C-467
O-247AC
C-468
IOR 450 M
c468
c467
c463
TRANSISTORS 640 JS
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C959
Abstract: transistor c956 C956 IRGPC50KD2 c954 30A to-247ac Diode IOR 10 dc
Text: P D - 9.1123 International »»Rectifier IRGPC50KD2 Short Circuit Rated UltraFast CoPack IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features c V ces = 600V • Short circuit rated -10|js @ 125°C, VQE = 15V • Switching-loss rating includes all "tail" losses
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IRGPC50KD2
50KD2
O-247AC
C-960
C959
transistor c956
C956
c954
30A to-247ac
Diode IOR 10 dc
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LE C346
Abstract: No abstract text available
Text: International Rectifier P D -9.1133 IRGBC30M-S Short Circuit Rated Fast IGBT INSULATED GATE BIPOLAR TRANSISTOR Features • Short circuit rated - 10 ms @ 125°C, Vqe = 15V • Switching-loss rating includes all "tail" losses • Optimized for medium operating frequency 1 to
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IRGBC30M-S
10kHz)
SMD-220
C-346
4flS54S2
002013b
LE C346
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c877
Abstract: TRANSISTOR C875 C878 transistor transistor c877 c878 C875 transistor C876 c874
Text: P D - 9.1129 bitemational [ÏÔR Rectifier IRGPC20K INSULATED GATE BIPOLAR TRANSISTOR Short Circuit Rated UltraFast IGBT Features • Short circuit rated - lOpis @ 125°C, Vqe = 15V • Switching-loss rating includes all "tail" losses • Optimized for high operating frequency over
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IRGPC20K
C-877
O-247AC
C-878
c877
TRANSISTOR C875
C878 transistor
transistor c877
c878
C875 transistor
C876
c874
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Untitled
Abstract: No abstract text available
Text: MG25Q1BS11 T O SH IB A TOSHIBA GTR MODULE SILICON N CHANNEL IGBT r<:i 1 Unit in mm HIGH POWER SWITCHING APPLICATIONS. MOTOR CONTROL APPLICATIONS. High Input Impedance High Speed : tf=1.0/iS Max. Low Saturation Voltage : VQE(sat) = 2.7V (Max.) Enhancement-Mode
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MG25Q1BS11
2-33D1A
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c879 transistor
Abstract: No abstract text available
Text: PD- 9.1075 International BagRectifier IRGPC30K INSULATED GATE BIPOLAR TRANSISTOR Short Circuit Rated UltraFast IGBT Features • Short circuit rated - 10ps @ 125°C, Vqe = 15V • Switching-loss rating includes all "tail" losses • Optimized for high operating frequency over 5kHz
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IRGPC30K
2Gb73
O-247AC
2Db74
c879 transistor
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sot marking code LB
Abstract: sot-223 marking 840
Text: Central CZT3090L Semiconductor Corp. SURFACE MOUNT LOW VCE SAT NPN SILICON POWER TRANSISTOR DESCRIPTION: The CENTRAL SEMICONDUCTOR CZT3090L is a Low Vqe( 5a t) NPN Transistor in a space sav ing Power SOT-223 surface mount package, designed for DC-DC converters for mobile sys
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CZT3090L
OT-223
100mA,
200mA
500mA
CP309
14-November
sot marking code LB
sot-223 marking 840
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Untitled
Abstract: No abstract text available
Text: MG25Q1BS11 T O SH IB A M G 2 5 Q 1 BS1 1 TOSHIBA GTR MODULE SILICON N CHANNEL IGBT Unit in mm HIGH POWER SWITCHING APPLICATIONS. MOTOR CONTROL APPLICATIONS. High Input Impedance HighSpeed : tf=1.0,«s Max. Low Saturation Voltage : VQE(sat) = 2.7V (Max.)
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MG25Q1BS11
2-33D1A
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Untitled
Abstract: No abstract text available
Text: International i“RjRectifier PD - 9.1297 IRGPC60M PRELIMINARY INSULATED GATE BIPOLAR TRANSISTOR Short Circuit Rated Fast IGBT Features c • Short circuit rated - 10|js @ 125°C, Vqe = 15V • Switching-loss rating includes all "tail" losses • Optimized for medium operating frequency 1 to 10kHz
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IRGPC60M
10kHz)
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transistor C930
Abstract: transistor c929 transistor C935 C936 C933 transistor C930 e C930 transistor transistor c936 transistor C933 c929
Text: kitemational IOR¡Rectifier PD-9.1109A IRGPC20KD2 Short Circuit Rated UltraFast CoPack IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features • • • • Ie Vces = 600V Short circuit rated -10ps @ 125°C, VQE = 15V Switching-loss rating includes all "tail" losses
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-10ps
IRGPC20KD2
C-935
O-247AC
C-936
transistor C930
transistor c929
transistor C935
C936
C933
transistor C930 e
C930 transistor
transistor c936
transistor C933
c929
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transistor TO-3P Outline Dimensions
Abstract: IRGPC60K
Text: PD - 9.1296 International i^ ] Rectifier IRGPC60K Short Circuit Rated UltraFast IGBT INSULATED GATE BIPOLAR TRANSISTOR Fea tu res • Short circuit rated - 10ps @ 125°C, Vqe = 15V • Switching-loss rating includes all "tail" losses • Optimized for high operating frequency over 5kHz
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IRGPC60K
Liguria49
transistor TO-3P Outline Dimensions
IRGPC60K
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c846 transistor
Abstract: c844 transistor C-844 C-843 transistor c848 C-844 power transistor c844 "Bipolar transistors"
Text: P D -9.1071 kitemational ËüRectifier IRGBC30K Short Circuit Rated UltraFast IGBT INSULATED GATE BIPOLAR TRANSISTOR Features • Short circuit rated - 10ms @ 125°C, Vqe = 15V • Switching-loss rating includes ail "tail" losses • Optimized for high operating frequency over 5kHz
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IRGBC30K
TQ-220AB
C-848
c846 transistor
c844
transistor C-844
C-843
transistor c848
C-844
power transistor c844
"Bipolar transistors"
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