motherboard diagram
Abstract: 486 MOTHERBOARD MYLEX headland technology 486DX symphony chip set motherboard HT-216 HGC hercules headland 386 486DX symphony chip set cga to vga headland
Text: ML466 Slimline System Board lnstallatlon and Operations Guide Vorolon 001 1mQ2 P/N: r71011-001 MSL486 Sllmline Boari Pmfaco PREFACE Thank you for your choice of a Myiex MSL488 System Board product. With proper installation and care, your Myiex System Board will operate
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ML466
r71011-001
MSL486
MSL488
720x540
800x600
1024x768
640x400
motherboard diagram
486 MOTHERBOARD MYLEX
headland technology
486DX symphony chip set motherboard
HT-216
HGC hercules
headland 386
486DX symphony chip set
cga to vga
headland
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VQA 23
Abstract: Funkamateur VQA 13 ESBR5501 vqa 33 FUNKAMATEUR - Bauelementeinformation VQA13 esbg5501 CQX51 TLUY5400
Text: FUNKAMATEUR - Bauelementeinformation Vergleichslisten Optoelektronik Uchtemitterdioden Lichtemitterdioden, Durchmesser 5 mm o Farbe WF rot rot rot grün gelb rot grün gelb orange rot grün VQA VQA VOA VQA VQA VQA VQA VQA VQA VQA VQA 10 13 13-1 23 33 16 26
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LS5160
CQX51
HLMP-33
TLS1541)
SAR55114)
TLR116A3)
TLUR5400
CQY24
HLMP-3000
TLR114A3)
VQA 23
Funkamateur
VQA 13
ESBR5501
vqa 33
FUNKAMATEUR - Bauelementeinformation
VQA13
esbg5501
TLUY5400
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5252 F 1006
Abstract: 40r6 NF 846 RFT service-mitteilungen "service-mitteilungen" vqe 21 RFT Servicemitteilungen servicemitteilungen service-mitteilungen 5252 f 1201
Text: SERVICE-MITTEILUNGEN 12-15 Iradio - television VEB RFT INDUSTRIEVERTRIEB RUNDFUNK UND F E R N S E H E N Ausgabe Seite S e p t. 88 1- 3 16 M itte ilu n g aus dem VEB S te r n -B a d io B e r l in , K u n d en d ien st Laufw erk MU 3oo S-DB - S e r v ic e v a r ia n te n
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K/10--
K/10-10
5252 F 1006
40r6
NF 846
RFT service-mitteilungen
"service-mitteilungen"
vqe 21
RFT Servicemitteilungen
servicemitteilungen
service-mitteilungen
5252 f 1201
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A277D
Abstract: applikation heft A225D "halbleiterwerk frankfurt" VQA 13 VQA13 information applikation A302D Transistoren DDR halbleiterwerk
Text: J motkr^elel-ctsnonH-c Information Information - Applikation v : 1 . •' LEDAnsteuerungsscbaltkreis A 277 D * Eigenschaften und Einsatzmöcjlichkeiten - M ikroelektronik H eft 10 v e b h albleiterw erk fr a n k fu r t/ o d e r laitbetrieb im veb Kombinat mikraelektronik
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Diode KD 514
Abstract: B30C250 GD507A DIODE OA-172 kyx 28 SY360 ky 202 h thyristor B280C1500 C5000-3300 BZY79C
Text: Deutsche Post Studiotechnik Fernsehen BauelementeMitteilunq Nr.7 Diodenvergleichsliste Verfasser: Dipl.-Ing. Klaus-Peter Hartmann Abteilung PMM Herausgeber: \>y Studiotechnik Fernsehen Informationsstelle RIS 1429 1 19 9 Berlin Rudower Chaussee 3 Fernruf: 6 7 3 3381
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UEI 20 SP 010
Abstract: Datenblattsammlung u82720 mikroelektronik datenblattsammlung VEB mikroelektronik UB8820M "halbleiterwerk frankfurt" UEI 15 SP 020 Aktive elektronische Bauelemente 1988 Teil 2 B4207D
Text: e l e k t r o m k - b a u e ì e m e n t e * W UKaÊÊi I Ä I L I I m V w •1 vît M •'4 n, ' I ill ■ DATEN BLATTSAMM LU NG elektronische bauelemente ?: V' I j| D A I Ï K B L A U S A MML ÜHG "E lektronische Bauelemente1' Ausgabe 1/89 14 : "Neue und weiterentwiekelte Bauelemente sowie ausgewählte Importbauelemente"
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64-KBit-Sehreib--Iese-Speicher
086/11/B9
UEI 20 SP 010
Datenblattsammlung
u82720
mikroelektronik datenblattsammlung
VEB mikroelektronik
UB8820M
"halbleiterwerk frankfurt"
UEI 15 SP 020
Aktive elektronische Bauelemente 1988 Teil 2
B4207D
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max4440
Abstract: No abstract text available
Text: APT10086BVFR A dvanced w Tæ p o w e r Te c h n o l o g y iooov i3a 0.8600 POWER MOS V FREDFET Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V®
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APT10086BVFR
O-247
APT10086BVR
100V16
max4440
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crt bw diagram
Abstract: CR2424 CR2425 SC05 VQA 23
Text: DISCRETE SEMICONDUCTORS [M m Ü IK IE E T CR2424; CR2425 Video driver hybrid amplifiers Product specification Supersedes data of November 1992 File under Discrete Semiconductors, SC05 1995 Apr 04 Philips Semiconductors PH ILIPS 713,Dfl2fc. 0 0 T 5 1 7 t. S1G
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CR2424;
CR2425
00T517t.
OT115L
CR2424)
7110fl2b
crt bw diagram
CR2424
CR2425
SC05
VQA 23
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Untitled
Abstract: No abstract text available
Text: A dvanced APT8065BVFR pow er Te c h n o lo g y 800V POWER MOS V 13A 0.650Q FREDFET Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V®
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APT8065BVFR
O-247
APT8065BVFR
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A209K
Abstract: 1pm05 tda 7812 KA213A KP303D B342D sft353 GL 7812 u 711 service-mitteilungen
Text: SERVICE-MITTEILUNGEN VEB IN D US TR IEV E R TR IE B R U N D F U N K U N D FERNSEHEN jf jl f j= = Ì 3 I ra d io - television AUSGABE: 1985 3 S e ite 1 - 4 Ü b e r s i c h t über d ie w ic h tig s te n H a lb le ite r Stand* A p ril 1985 Die in den S e rv ic e -M itte ilu n g e n N r. 3 /8 2 v e r ö f f e n t l ic h t e Über
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3D24N2Y
Abstract: transistor sc 238 9008 transistor transistor sc 308 SAL 41 transistor 9013 1008 transistor X2C70 transistor D 1002 3D24N
Text: SERVICE-MITTEILUNGEN VEB INDUSTRIEVERTRIEB R U N O F U N K U N D FE R N SE H E N AUSGABE: M m ri r a d i o - t e i e v i s i o n l 1 9 8 4 14-16 S e ite 1 - 1 2 Mitteilung aus dem VSB RFT Industrievertrieb R.u.F. Leipzig Serviceinformationen zuin neuen Auto-Stereo-Kassettenabspielgerät
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Ge1012
3D24N2Y
transistor sc 238
9008 transistor
transistor sc 308
SAL 41
transistor 9013
1008 transistor
X2C70
transistor D 1002
3D24N
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VEB mikroelektronik
Abstract: "Mikroelektronik" Heft GWS servo VEB Kombinat zf filter lm 7803 3V Positive Voltage Regulator E355D "halbleiterwerk frankfurt" mikroelektronik Heft U706D VQB71
Text: H albleiter-B auelem ente Semiconductors D ie vorliegend e Übersicht en th ält in g ed rä n g te r Form d ie wichtigsten G renz- und Kenn d aten d e r in d er D D R g efertigten H a lb le ite rb au e le m e n te . Dem A n w en der soll durch diese Übersicht die Auswahl der jew eils in Frage kom menden
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Untitled
Abstract: No abstract text available
Text: A dvanced APT5020BVFR pow er Te c h n o lo g y 500V POWER MOS V 26A 0.200Í2 FREDFET Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V®
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APT5020BVFR
O-247
APT5020BVFR
O-247AD
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Untitled
Abstract: No abstract text available
Text: A dvanced PO W ER Te c h n o lo g y APT10050LVFR iooov 21 a o.sooq POWER MOS V FREDFET Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V®
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APT10050LVFR
O-264
APT10050LVFR
100mS
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v086
Abstract: No abstract text available
Text: SSF5N80A Advanced Power MOSFET FEATURES Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 25 nA M ax @ VOS= 800V - 800 V ^ D S (o n ) = 2.2 Q. < •<3-
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SSF5N80A
v086
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sm 0038
Abstract: 0038Q
Text: A dvanced APT20M38BVR pow er Te c h n o lo g y 200V 67A 0.038Q POWER MOS V Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V®
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APT20M38BVR
O-247
APT20M38BVR
sm 0038
0038Q
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tektronix 11803
Abstract: crt monitor block diagram CR6627 crt bw diagram pF CAPACITOR 100v pm8943 variable capacitor SC05 SD24
Text: DISCRETE SEMICONDUCTORS CR6627 Triple video driver hybrid amplifier Product specification File under Discrete Semiconductors, SC05 1995 Apr 04 Philips Semiconductors PHILIPS PHILIPS TiiDaat, ncneEze zsq • Philips Semiconductors Product specification Triple video driver hybrid amplifier
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CR6627
PM8943,
7110fl2t.
0CH2227
OT347.
711052t,
0CH222fl
tektronix 11803
crt monitor block diagram
CR6627
crt bw diagram
pF CAPACITOR 100v
pm8943
variable capacitor
SC05
SD24
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Untitled
Abstract: No abstract text available
Text: A dvanced APT30M70BVR pow er Te c h n o lo g y 300V 48A 0.070Í2 POWER MOS V Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V®
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APT30M70BVR
O-247
APT30M70BVR
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0038Q
Abstract: No abstract text available
Text: A dvanced APT20M38SVR pow er Te c h n o lo g y 200V P O W E R 67A 0.038Q M O S V Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V®
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APT20M38SVR
APT20M38SVR
0038Q
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SM 96 diode
Abstract: No abstract text available
Text: A dvanced PO W ER Te c h n o lo g y A PT10050JVFR iooov POWER MOS V 19 A o.sooq FREDFET Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V®
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PT10050JVFR
OT-227
APT10050JVFR
E145592
SM 96 diode
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Untitled
Abstract: No abstract text available
Text: APT5010LVFR A dvanced pow er Te c h n o lo g y 5 0 0 V POWER MOS V 4 7 A 0 .1 0 0 Q FREDFET Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V®
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APT5010LVFR
O-264
APT5010LVFR
-10mS
-100mS
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5017B
Abstract: DIODE TH 5 N
Text: A P T 5017B V F R A dvanced PO W ER Te c h n o lo g y 500v POWER MOS V 30a 0.170s 2 FREDFET Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V®
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5017B
O-247
APT5017BVFR
APT5017BVFR
O-247AD
DIODE TH 5 N
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tic 1260
Abstract: E 212 JFET
Text: APT6015B2VR A dvanced pow er Te c h n o lo g y 600V 38A 0.150Í2 POWER MOS V Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V™
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APT6015B2VR
O-247
APT6015B2VR
tic 1260
E 212 JFET
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sm 126 ao 570
Abstract: No abstract text available
Text: A d P O T e v a W c n E h c e A d P T 5 1 J V F R R n o l o g y 5 POWER MOS V v 4 4 0 . 1 a o o q FREDFET Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V®
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O-264
APT5010JVFR
E145592
sm 126 ao 570
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