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    Vishay Siliconix VQ2004J

    0.41 A, 60 V, 5 ohm, 4 CHANNEL, P-CHANNEL, Si, POWER, MOSFET
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Quest Components VQ2004J 432
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    VQ2004J Datasheets (6)

    Part ECAD Model Manufacturer Description Curated Type PDF
    VQ2004J Vishay Telefunken Original PDF
    VQ2004J Unknown FET Data Book Scan PDF
    VQ2004J Unknown Semiconductor Master Cross Reference Guide Scan PDF
    VQ2004J Unknown Shortform Datasheet & Cross References Data Short Form PDF
    VQ2004J Siliconix MOSPOWER Design Data Book 1983 Scan PDF
    VQ2004J Vishay Siliconix Shortform Siliconix Datasheet Short Form PDF

    VQ2004J Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    VQ2004J

    Abstract: No abstract text available
    Text: VQ2004J P-Channel Enhancement-Mode MOSFET Transistor Product Summary V BR DSS Min (V) rDS(on) Max (W) VGS(th) (V) ID (A) –60 5 @ VGS = –10 V –2 to –4.5 –0.41 Features Benefits Applications D D D D D D D D D D D Drivers: Relays, Solenoids, Lamps,


    Original     		PDF VQ2004J P-37655--Rev. 25-Jul-94 VQ2004J

    quad p-CHANNEL

    Abstract: VQ2004J
    Text: VQ2004J Vishay Siliconix Quad P-Channel 60-V D-S MOSFET PRODUCT SUMMARY V(BR)DSS Min (V) rDS(on) Max (W) VGS(th) (V) ID (A) –60 5 @ VGS = –10 V –2 to –4.5 –0.41 FEATURES BENEFITS APPLICATIONS D D D D D D D D D D D Drivers: Relays, Solenoids, Lamps,


    Original     		PDF VQ2004J S-04279--Rev. 16-Jul-01 quad p-CHANNEL VQ2004J

    VQ2004J

    Abstract: No abstract text available
    Text: VQ2004J P-Channel Enhancement-Mode MOSFET Transistor Product Summary V BR DSS Min (V) rDS(on) Max (W) VGS(th) (V) ID (A) –60 5 @ VGS = –10 V –2 to –4.5 –0.41 Features Benefits Applications D D D D D D D D D D D Drivers: Relays, Solenoids, Lamps,


    Original     		PDF VQ2004J P-37655--Rev. 25-Jul-94 VQ2004J

    VQ2004J

    Abstract: No abstract text available
    Text: VQ2004J P-Channel Enhancement-Mode MOS Transistor Product Summary V BR DSS Min (V) rDS(on) Max (W) VGS(th) (V) ID (A) –60 5 @ VGS = –10 V –2 to –4.5 –0.41 Features Benefits Applications D D D D D D D D D D D Drivers: Relays, Solenoids, Lamps, Hammers, Displays, Memories,


    Original     		PDF VQ2004J P-37655--Rev. 25-Jul-94 VQ2004J

    VQ2004J

    Abstract: No abstract text available
    Text: VQ2004J Siliconix PĆChannel EnhancementĆMode MOS Transistor Product Summary V BR DSS Min (V) rDS(on) Max (W) VGS(th) (V) ID (A) -60 5 @ VGS = -10 V -2 to -4.5 -0.41 Features Benefits Applications D D D D D D D D D D D Drivers: Relays, Solenoids, Lamps, Hammers,


    Original     		PDF VQ2004J 37655--Rev. VQ2004J

    VQ2004J

    Abstract: quad p-CHANNEL
    Text: VQ2004J Vishay Siliconix Quad P-Channel 60-V D-S MOSFET PRODUCT SUMMARY V(BR)DSS Min (V) rDS(on) Max (W) VGS(th) (V) ID (A) –60 5 @ VGS = –10 V –2 to –4.5 –0.41 FEATURES BENEFITS APPLICATIONS D D D D D D D D D D D Drivers: Relays, Solenoids, Lamps,


    Original     		PDF VQ2004J 18-Jul-08 VQ2004J quad p-CHANNEL

    quad p-CHANNEL

    Abstract: vq2004j
    Text: VQ2004J Vishay Siliconix Quad P-Channel 60-V D-S MOSFET PRODUCT SUMMARY V(BR)DSS Min (V) rDS(on) Max (W) VGS(th) (V) ID (A) –60 5 @ VGS = –10 V –2 to –4.5 –0.41 FEATURES BENEFITS APPLICATIONS D D D D D D D D D D D Drivers: Relays, Solenoids, Lamps,


    Original     		PDF VQ2004J 08-Apr-05 quad p-CHANNEL vq2004j

    TCA780

    Abstract: TFK U 111 B TFK U 4614 B TFK S 186 P TFK U 217 B TFK BP w 41 n TFK BPW 41 N Tfk 880 TFK 148 TDSR 5150 G
    Text: Industry Part Number 1N3245 1N3611GP 1N3612GP 1N3613GP 1N3614GP 1N3725 1N3957GP 1N4001GP 1N4002GP 1N4003GP 1N4004GP 1N4005GP 1N4006GP 1N4007GP 1N4245GP 1N4246GP 1N4247GP 1N4248GP 1N4249GP 1N4678.1N4717 1N4728A.1N4761A 1N4933GP 1N4934GP 1N4935GP 1N4936GP


    Original     		PDF 1N3245 1N3611GP 1N3612GP 1N3613GP 1N3614GP 1N3725 1N3957GP 1N4001GP 1N4002GP 1N4003GP TCA780 TFK U 111 B TFK U 4614 B TFK S 186 P TFK U 217 B TFK BP w 41 n TFK BPW 41 N Tfk 880 TFK 148 TDSR 5150 G

    TEMIC K153P

    Abstract: TSHF5471 tfmw5380 dn1328 tdsr5156 dn904 TDSR5153 HS0038 IR sensor TLVD4900 TCDF1910
    Text: Quality and Reliability Report 1997 TEMIC Semiconductors 07.97 Table of Contents TEMIC Quality Policy .1 Quality System .2


    Original     		PDF WN1053 WN1087-18R WN1087-TR1 WN1090 WN1125 WN1142 WN1158-TA WN1165-TR1 WN1170 WN934 TEMIC K153P TSHF5471 tfmw5380 dn1328 tdsr5156 dn904 TDSR5153 HS0038 IR sensor TLVD4900 TCDF1910

    quad p-CHANNEL

    Abstract: No abstract text available
    Text: VQ2004J Vishay Siliconix Quad P-Channel 60-V D-S MOSFET PRODUCT SUMMARY V(BR)DSS Min (V) rDS(on) Max (£2) v GS(th) (V ) b (A) -6 0 5 V QS = - 1 0 V - 2 t o -4 .5 -0.41 FEATURES BENEFITS APPLICATIONS • • • • • • • • • • • Drivers: Relays, Solenoids, Lamps,


    OCR Scan     		PDF VQ2004J VQ2004J S-04279-- 16-Jul-01 quad p-CHANNEL

    b0725

    Abstract: No abstract text available
    Text: Tem ic VQ2004J Siliconix P-Channel Enhancement-Mode MOS Transistor Product Summary V BR DSS M in (V) *DS(on) M a x (Q ) V GS(th) (V) I d (A) -6 0 5 @ V g s = -10 V - 2 to - 4 .5 -0 .4 1 Features Benefits Applications • • • • • • • • • •


    OCR Scan     		PDF VQ2004J P-37655--Rev. b0725

    VP2410

    Abstract: No abstract text available
    Text: Ænsgga VPDV SERIES DIE P-Channel Enhancement-Mode MOS Transistors r“5r PERFORMANCE CURVES PART NUMBER V BR DSS VPDV1CHP 100 5 • • • • VP0808B/L/M VP1008B/L/M VQ2004J (\/PDV10 x 4) VQ2006J (VPDV10 X 4) VPDV10 VPDV2CHP 240 10 • • • TP2010L


    OCR Scan     		PDF VP0808B/L/M VP1008B/L/M VQ2004J \/PDV10 VQ2006J VPDV10 TP2010L TP2410L VP2410L VPDV10 VP2410

    b0725

    Abstract: No abstract text available
    Text: Tem ic VQ2004J Siliconix P-Channel Enhancement-Mode MOS Transistor Product Summary V BR Dss Min (V) rDS<on) Max (Q) V g s (Ui) (V) I d (A) -6 0 5 @ V o s = -1 0 V - 2 to -4 .5 -0.41 Features Benefits • • • • • • • • • • High-Side Switching


    OCR Scan     		PDF VQ2004J 2004J P-37655--Rev. b0725

    Untitled

    Abstract: No abstract text available
    Text: Tem ic VQ2004J S e m i c o n d u c t o r s P-Channel Enhancement-Mode MOSFET Transistor Product Summary V B R D S S M i n ( V ) rn s iim ) M a x (Q ) V e s ta » (V ) I d (A ) -6 0 5 V GS = - 1 0 V - 2 to - 4 .5 -0 .4 1 Features Benefits • • • •


    OCR Scan     		PDF VQ2004J P-37655--Rev. 25-Jul-94 P-37655--

    vp0300m

    Abstract: VP0300B VP0808B VP0808L VP0808M VP1008B VP1008L VP1008M VQ2001P VQ2004P
    Text: MOSPOWER Selector Guide Continued P-Channel MOSPOWER Device Breakdown Voltage (Volts) •100 rDS(on) (Ohms) >D Continuous (Amps) 5.0 5.0 2.5 0.9 0.9 -8 0 -3 0 5.0 5.0 2.5 -1 0 0 -8 0 Powor Dissipation (Watts) Part Number 6.25 6.25 6.25 VP1008B VP0808B VP0300B


    OCR Scan     		PDF VP1008B VP0808B VP0300B O-237Ã VP1008M VP0808M VP0300M VP1008L VP0808L 14-Pln vp0300m VP0300B VP0808L VQ2001P VQ2004P

    2sk to-92

    Abstract: VNS012A Siliconix v020 VNS009A VNS009D VNS013A VNT0080 VNT008A VNT009A
    Text: - 330 - 13=25=0 Si £ tt Vd s or € * Vd g % (V) Vg s Id * /CH (V) (A) 4# •u Pd Ig s s loss max * /CH (W) (nA) Vg s (V) Vd s (V) (kiA) (V) (V) (nA) 14 (Ta=25°C) b(on) Vd s = Vg s Ciss g fs Coss Crss ft & flt % V g s =0 (max) *typ V g s (0) (V) *typ (A)


    OCR Scan     		PDF VNS009A O-204AA VNS009D O-220AB VNS012A O-204AE VQ1006P VQ2001J VQ2001P v02004j 2sk to-92 Siliconix v020 VNS013A VNT0080 VNT008A VNT009A

    VP0808B

    Abstract: VP0300B VP0300M VP0808L VP0808M VP1008B VP1008L VP1008M VQ2001P VQ2004P
    Text: MOSPOWER Selector Guide Continued P-Channel MOSPOWER Device Breakdown Voltage (Volts) •100 rDS(on) (Ohms) >D Continuous (Amps) 5.0 5.0 2.5 0.9 0.9 -8 0 -3 0 5.0 5.0 2.5 0.37 0.37 0.48 -1 0 0 -8 0 5.0 5.0 -9 0 -6 0 -3 0 5.0 5.0 -90 -60 -30 5.0 5.0 2.0 -8 0


    OCR Scan     		PDF VP1008B VP0808B VP0300B O-237Ã VP1008M VP0808M VP0300M VP1008L VP0808L 14-Pln VP0300B VP0300M VP0808L VQ2001P VQ2004P

    BSR78

    Abstract: VP0300M VP0808L 041 itt diode VP0300B VP0808B VP0808M VP1008B VP1008L VP1008M
    Text: MOSPOWER Selector Guide Continued P-Channel MOSPOWER Device Breakdown Voltage (Volts) rDS(on) (Ohms) >D Continuous (Amps) •100 -8 0 -3 0 5.0 5.0 2.5 0.9 0.9 100 -8 0 -3 0 5.0 5.0 2.5 -1 0 0 -8 0 Powor Dissipation (Watts) Part Number 6.25 6.25 6.25 VP1008B


    OCR Scan     		PDF VP1008B VP0808B VP0300B O-237Ã VP1008M VP0808M VP0300M VP1008L VP0808L 14-Pln BSR78 VP0300M VP0808L 041 itt diode VP0300B

    VPDS06

    Abstract: No abstract text available
    Text: VPDS06 CT*Siliconix incorporated TYPICAL CHARACTERISTICS T ransconductance C pF I d ÌA) V DS (V) On-Resistance vs. Junction Temperature 's (A) V SD (V) Revised (02/11/91) -0 .3 -0 .6 -0 .9 -1 .2 V GS (V) -1 .5 -1 .8 -2.1 6-203 ffX 'Sificonix VPDS06 in c o r p o r a te d


    OCR Scan     		PDF VPDS06 6-204VP1008B) VPDV10 VPDS06

    VP0808M

    Abstract: VQ2006P VP0300B VP0300M VP0808B VP0808L VP1008B VP1008L VP1008M VQ2001P
    Text: MOSPOWER Selector Guide Continued P-Channel MOSPOWER Device Breakdown Voltage (Volts) •100 -8 0 -3 0 rDS(on) (Ohms) >D Continuous (Amps) 5.0 5.0 2.5 0.9 0.9 -8 0 -3 0 5.0 5.0 2.5 0.37 0.37 0.48 -1 0 0 -8 0 5.0 5.0 -9 0 -6 0 -3 0 -90 -60 -30 1.3 Powor Dissipation


    OCR Scan     		PDF VP1008B VP0808B VP0300B O-237Ã VP1008M VP0808M VP0300M VP1008L VP0808L 14-Pln VQ2006P VP0300B VP0300M VP0808L VQ2001P

    VP0808B

    Abstract: VP0300B VP0300M VP0808L VP0808M VP1008B VP1008L VP1008M VQ2001P VQ2004P
    Text: MOSPOWER Selector Guide Continued P-Channel MOSPOWER Device Breakdown Voltage (Volts) •100 rDS(on) (Ohms) >D Continuous (Amps) 5.0 5.0 2.5 0.9 0.9 -8 0 -3 0 5.0 5.0 2.5 -1 0 0 -8 0 Powor Dissipation (Watts) Part Number 6.25 6.25 6.25 VP1008B VP0808B VP0300B


    OCR Scan     		PDF VP1008B VP0808B VP0300B O-237Ã VP1008M VP0808M VP0300M VP1008L VP0808L 14-Pln VP0300B VP0300M VP0808L VQ2001P VQ2004P

    VP100

    Abstract: VP1001P VP0300B VP0300M VP0808B VP0808L VP0808M VP1008B VP1008L VP1008M
    Text: MOSPOWER Selector Guide Continued P-Channel MOSPOWER Device Breakdown Voltage (Volts) •100 rDS(on) (Ohms) >D Continuous (Amps) 5.0 5.0 2.5 0.9 0.9 5.0 5.0 2.5 Powor Dissipation (Watts) Part Number 6.25 6.25 6.25 VP1008B VP0808B VP0300B 0.37 0.37 0.48 1.0


    OCR Scan     		PDF VP1008B VP0808B VP0300B O-237Ã VP1008M VP0808M VP0300M VP1008L VP0808L 14-Pln VP100 VP1001P VP0300B VP0300M VP0808L

    VP0808M

    Abstract: IN400 VP0300B VP0300M VP0808B VP0808L VP1008B VP1008L VP1008M VQ2001P
    Text: MOSPOWER Selector Guide Continued P-Channel MOSPOWER Device Breakdown Voltage (Volts) rDS(on) (Ohms) >D Continuous (Amps) •100 -8 0 -3 0 5.0 5.0 2.5 0.9 0.9 100 -8 0 -3 0 5.0 5.0 2.5 -1 0 0 -8 0 Powor Dissipation (Watts) Part Number 6.25 6.25 6.25 VP1008B


    OCR Scan     		PDF VP1008B VP0808B VP0300B O-237Ã VP1008M VP0808M VP0300M VP1008L VP0808L 14-Pln IN400 VP0300B VP0300M VP0808L VQ2001P

    VP0300M

    Abstract: k 2541 30v IN400 VP0300B VP0808B VP0808L VP0808M VP1008B VP1008L VP1008M
    Text: MOSPOWER Selector Guide Continued P-Channel MOSPOWER Device Breakdown Voltage (Volts) •100 rDS(on) (Ohms) >D Continuous (Amps) 5.0 5.0 2.5 0.9 0.9 -8 0 -3 0 5.0 5.0 2.5 -1 0 0 -8 0 Powor Dissipation (Watts) Part Number 6.25 6.25 6.25 VP1008B VP0808B VP0300B


    OCR Scan     		PDF VP1008B VP0808B VP0300B O-237Ã VP1008M VP0808M VP0300M VP1008L VP0808L 14-Pln VP0300M k 2541 30v IN400 VP0300B VP0808L