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    VQ2001P Price and Stock

    Vishay Siliconix VQ2001P

    MOSFET 4P-CH 30V 0.6A 14DIP
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    DigiKey VQ2001P Tube
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    Quest Components VQ2001P 20
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    VQ2001P 2
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    ES Components VQ2001P
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    Vishay Siliconix VQ2001P-2

    MOSFET 4P-CH 30V 0.6A 14DIP
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    ES Components VQ2001P-2 428
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    Vishay Intertechnologies VQ2001P-E3

    Transistor MOSFET Array Quad P-Channel 30V 0.6A 14-Pin PDIP Bulk - Bulk (Alt: VQ2001P-E3)
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    Avnet Americas VQ2001P-E3 Bulk 25
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    Vishay Intertechnologies VQ2001P

    Transistor MOSFET Array Quad P-CH 30V 0.6A 14-Pin PDIP T/R (Alt: VQ2001P)
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    EBV Elektronik VQ2001P 26 Weeks 25
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    VQ2001P Datasheets (11)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    VQ2001P Vishay P-Channel Enhancement-Mode MOSFET Transistors Original PDF
    VQ2001P Vishay Intertechnology P-Channel 30-V (D-S) MOSFET Original PDF
    VQ2001P Vishay Siliconix FETs - Arrays, Discrete Semiconductor Products, MOSFET 4P-CH 30V 600MA 14DIP Original PDF
    VQ2001P Unknown FET Data Book Scan PDF
    VQ2001P Unknown Semiconductor Master Cross Reference Guide Scan PDF
    VQ2001P Unknown Shortform Datasheet & Cross References Data Short Form PDF
    VQ2001P Siliconix MOSPOWER Design Data Book 1983 Scan PDF
    VQ2001P Vishay Siliconix Shortform Siliconix Datasheet Short Form PDF
    VQ2001P Vishay Telefunken P-Channel Enhancement-Mode MOSFET Transistors Scan PDF
    VQ2001P-2 Vishay Transistor Mosfet P-CH 30V 0.6A 14DIP Original PDF
    VQ2001P-2 Vishay Siliconix FETs - Arrays, Discrete Semiconductor Products, MOSFET 4P-CH 30V 600MA 14DIP Original PDF

    VQ2001P Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    p-channel DMOS

    Abstract: P-Channel Enhancement Mode Vertical DMOS FET relay 12v 5 pin VQ2001P
    Text: VQ2001 P-Channel Enhancement-Mode Vertical DMOS FET Quad Array Ordering Information BVDSS / BVDGS RDS ON (max) ID(ON) (min) Order Number / Package -30V 2.0Ω -1.5A VQ2001P Quad Ceramic DIP* * 14-pin side-brazed ceramic DIP. Advanced DMOS Technology High Reliability Devices


    Original     		PDF VQ2001 VQ2001P 14-pin p-channel DMOS P-Channel Enhancement Mode Vertical DMOS FET relay 12v 5 pin VQ2001P

    k2645

    Abstract: k4005 U664B mosfet k4005 MB8719 transistor mosfet k4004 SN16880N stk5392 STR451 BC417
    Text: 1 BHIAB Electronics Du som söker besvärliga IC & transistorer, börja Ditt sökande hos oss – vi har fler typer på lager än man rimlingen kan begära av ett företag Denna utgåva visar lagerartiklar men tyvärr saknas priser och viss information Men uppdatering sker kontinuerligt


    Original     		PDF MK135 MK136 MK137 MK138 MK139 MK140 Mk142 MK145 MK155 157kr k2645 k4005 U664B mosfet k4005 MB8719 transistor mosfet k4004 SN16880N stk5392 STR451 BC417

    VP0300M

    Abstract: VP0300M equivalent TA 7061 TO-205AD VP0300B VP0300L VQ2001J VQ2001P
    Text: VP0300B/L/M, VQ2001J/P P-Channel Enhancement-Mode MOS Transistors Product Summary Part Number V BR DSS Min (V) rDS(on) Max (W) VGS(th) (V) ID (A) VP0300B 2.5 @ VGS = –12 V –2 to –4.5 –1.25 VP0300L 2.5 @ VGS = –12 V –2 to –4.5 –0.32 VP0300M


    Original     		PDF VP0300B/L/M, VQ2001J/P VP0300B VP0300L VP0300M VQ2001J VQ2001P O-226AA, VP0300L P-38283--Rev. VP0300M VP0300M equivalent TA 7061 TO-205AD VP0300B VQ2001J VQ2001P

    VQ2001P

    Abstract: No abstract text available
    Text: VP0300L/LS, VQ2001J/P Vishay Siliconix P-Channel Enhancement-Mode MOSFET Transistors PRODUCT SUMMARY Part Number rDS on Max (W) VGS(th) (V) ID (A) VP0300L V(BR)DSS Min (V) 2.5 @ VGS = –12 V –2 to –4.5 –0.32 VP0300LS 2.5 @ VGS = –12 V –2 to –4.5


    Original     		PDF VP0300L/LS, VQ2001J/P VP0300L VP0300LS VQ2001J VQ2001P O-226AA, VP0300L S-00591--Rev. 04-Apr-00 VQ2001P

    VP0300B

    Abstract: VQ2001P VP0300L VP0300LS VQ2001J
    Text: VP0300B/L/LS, VQ2001J/P Vishay Siliconix P-Channel Enhancement-Mode MOSFET Transistors PRODUCT SUMMARY Part Number V BR DSS Min (V) rDS(on) Max (W) VGS(th) (V) ID (A) VP0300B 2.5 @ VGS = –12 V –2 to –4.5 –1.25 VP0300L 2.5 @ VGS = –12 V –2 to –4.5


    Original     		PDF VP0300B/L/LS, VQ2001J/P VP0300B VP0300L VQ2001J VQ2001P VP0300LS O-226AA, VP0300L S-58620--Rev. VP0300B VQ2001P VP0300LS VQ2001J

    VP0300M

    Abstract: VP0300L
    Text: VP0300B/L/M, VQ2001J/P P-Channel Enhancement-Mode MOSFET Transistors Product Summary Part Number V BR DSS Min (V) rDS(on) Max (W) VGS(th) (V) ID (A) VP0300B 2.5 @ VGS = –12 V –2 to –4.5 –1.25 VP0300L 2.5 @ VGS = –12 V –2 to –4.5 –0.32 VP0300M


    Original     		PDF VP0300B/L/M, VQ2001J/P VP0300B VP0300L VP0300M VQ2001J VQ2001P O-226AA,

    s4 vishay

    Abstract: AN804 VP0300L VP0300LS VQ2001J VQ2001P 0300L
    Text: VP0300L/LS, VQ2001J/P Vishay Siliconix P-Channel 30-V D-S MOSFETs PRODUCT SUMMARY Part Number V(BR)DSS Min (V) rDS(on) Max (W) VGS(th) (V) ID (A) VP0300L 2.5 @ VGS = –12 V –2 to –4.5 –0.32 VP0300LS 2.5 @ VGS = –12 V –2 to –4.5 –0.5 2 @ VGS = –12 V


    Original     		PDF VP0300L/LS, VQ2001J/P VP0300L VP0300LS VQ2001J VQ2001P 18-Jul-08 s4 vishay AN804 VP0300L VP0300LS VQ2001J VQ2001P 0300L

    cp4071

    Abstract: data sheet IC 7408 2N4891 IC 7408 MDA970A2 MDA2500 1854-0071 MDA2502 2N4342 IC TTL 7400
    Text: Transistor - Diode Cross Reference - H.P. Part Numbers to JEDEC Numbers Part Num. 1820-0225 1820-0240 1820-0352 1820-1804 1821-0001 1821-0002 1821-0006 1850-0062 1850-0064 1850-0075 1850-0076 1850-0093 1850-0099 1850-0126 1850-0137 1850-0150 1850-0151 1850-0154


    Original     		PDF 68B09 SN74ALS04BN SN74ALS08N SN74ALS00AN CA3046 uA733 LM311P LM318 CA3094 78H05 cp4071 data sheet IC 7408 2N4891 IC 7408 MDA970A2 MDA2500 1854-0071 MDA2502 2N4342 IC TTL 7400

    DS10 diode

    Abstract: diode DS10
    Text: VQ2001 inc. P-Channel Enhancement-Mode Vertical DMOS FET Quad Array Ordering Information Order Number / Package B V DSS/ R b v dgs max (min) Quad Ceramic DIP* -30V 2.0ÌÌ -1.5A VQ2001P '□(ON) d S(ON) * 14-pin side-brazed ceram ic DIP. Advanced DMOS Technology


    OCR Scan     		PDF VQ2001 14-pin VQ2001P DS10 diode diode DS10

    Untitled

    Abstract: No abstract text available
    Text: ^ Superte x inc. VQ2001 P-Channel Enhancement-Mode Vertical DMOS FET Quad Array Ordering Information Order Number / Package BVdss/ R d S ON b v dgs (max) (min) Quad Ceramic DIP* -30V 2.0Q -1.5A VQ2001P ' d (ON) * 14-pin side-brazed ceramic DIP. Advanced DMOS Technology


    OCR Scan     		PDF VQ2001 VQ2001P 14-pin 300jas

    VP0300M

    Abstract: VP0300L VQ2001J VQ2001P VQ3001J VQ3001P VQ7254J VQ7254P IN4080 VPMH03
    Text: VPMH03 TYPICAL STATIC CHARACTERISTICS Pulse width 80ns— 30(Vs, Duty cycle 1%, Tc=25°C Part Numbers: VP0300M, VP0300L, VQ2001P, VQ2001J Segments 2 and 4: VQ3001P, VQ3001J, VQ7254P, VQ7254J Ohmic Region 1102 3 O : и. VDS = Ü. 0H 110 3 O z 10V VGS = iïTTTT


    OCR Scan     		PDF 80hs-30 VP0300M, VP0300L, VQ2001P, VQ2001J VQ3001P, VQ3001J, VQ7254P, VQ7254J VPMH03 VP0300M VP0300L VQ2001J VQ2001P VQ3001J VQ3001P VQ7254J VQ7254P IN4080 VPMH03

    Untitled

    Abstract: No abstract text available
    Text: ^ VQ2001 ~j r /r S i 11 r ' zJ r r , P-Channel Enhancement-Mode Vertical DMOS FET Quad Array Ordering Inform ation b v dss / BVdgs max Id(ON) (min) -30V 2.0Q -1.5A ^DS(ON) Order Number / Package Quad Ceramic DIP* VQ2001P * 14-pin side-brazed ceram ic DIP.


    OCR Scan     		PDF VQ2001 14-pin VQ2001P

    vp0300m

    Abstract: VP0300B VP0808B VP0808L VP0808M VP1008B VP1008L VP1008M VQ2001P VQ2004P
    Text: MOSPOWER Selector Guide Continued P-Channel MOSPOWER Device Breakdown Voltage (Volts) •100 rDS(on) (Ohms) >D Continuous (Amps) 5.0 5.0 2.5 0.9 0.9 -8 0 -3 0 5.0 5.0 2.5 -1 0 0 -8 0 Powor Dissipation (Watts) Part Number 6.25 6.25 6.25 VP1008B VP0808B VP0300B


    OCR Scan     		PDF VP1008B VP0808B VP0300B O-237Ã VP1008M VP0808M VP0300M VP1008L VP0808L 14-Pln vp0300m VP0300B VP0808L VQ2001P VQ2004P

    2sk to-92

    Abstract: VNS012A Siliconix v020 VNS009A VNS009D VNS013A VNT0080 VNT008A VNT009A
    Text: - 330 - 13=25=0 Si £ tt Vd s or € * Vd g % (V) Vg s Id * /CH (V) (A) 4# •u Pd Ig s s loss max * /CH (W) (nA) Vg s (V) Vd s (V) (kiA) (V) (V) (nA) 14 (Ta=25°C) b(on) Vd s = Vg s Ciss g fs Coss Crss ft & flt % V g s =0 (max) *typ V g s (0) (V) *typ (A)


    OCR Scan     		PDF VNS009A O-204AA VNS009D O-220AB VNS012A O-204AE VQ1006P VQ2001J VQ2001P v02004j 2sk to-92 Siliconix v020 VNS013A VNT0080 VNT008A VNT009A

    BSR78

    Abstract: VP0300M VP0808L 041 itt diode VP0300B VP0808B VP0808M VP1008B VP1008L VP1008M
    Text: MOSPOWER Selector Guide Continued P-Channel MOSPOWER Device Breakdown Voltage (Volts) rDS(on) (Ohms) >D Continuous (Amps) •100 -8 0 -3 0 5.0 5.0 2.5 0.9 0.9 100 -8 0 -3 0 5.0 5.0 2.5 -1 0 0 -8 0 Powor Dissipation (Watts) Part Number 6.25 6.25 6.25 VP1008B


    OCR Scan     		PDF VP1008B VP0808B VP0300B O-237Ã VP1008M VP0808M VP0300M VP1008L VP0808L 14-Pln BSR78 VP0300M VP0808L 041 itt diode VP0300B

    Untitled

    Abstract: No abstract text available
    Text: VP0300B/L/M, VQ2001J/P P-Channel Enhancement-Mode MOSFET Transistors Product Summary Part Number rDS »n M a x (Q ) V GS(th) (V) I d (A) VP0300B 2.5 @ VGs = -1 2 V - 2 to -4.5 -1.25 VP0300L 2.5 @ VGs - - 1 2 V - 2 to -4.5 -0.32 2.5 @ VGs = -1 2 V -2 to -4.5


    OCR Scan     		PDF VP0300B/L/M, VQ2001J/P VP0300B VP0300L VPG300M VQ200U VQ2001P P-38283--Rev. 15-Aug-94

    VP0808M

    Abstract: VQ2006P VP0300B VP0300M VP0808B VP0808L VP1008B VP1008L VP1008M VQ2001P
    Text: MOSPOWER Selector Guide Continued P-Channel MOSPOWER Device Breakdown Voltage (Volts) •100 -8 0 -3 0 rDS(on) (Ohms) >D Continuous (Amps) 5.0 5.0 2.5 0.9 0.9 -8 0 -3 0 5.0 5.0 2.5 0.37 0.37 0.48 -1 0 0 -8 0 5.0 5.0 -9 0 -6 0 -3 0 -90 -60 -30 1.3 Powor Dissipation


    OCR Scan     		PDF VP1008B VP0808B VP0300B O-237Ã VP1008M VP0808M VP0300M VP1008L VP0808L 14-Pln VQ2006P VP0300B VP0300M VP0808L VQ2001P

    VP0808B

    Abstract: VP0300B VP0300M VP0808L VP0808M VP1008B VP1008L VP1008M VQ2001P VQ2004P
    Text: MOSPOWER Selector Guide Continued P-Channel MOSPOWER Device Breakdown Voltage (Volts) •100 rDS(on) (Ohms) >D Continuous (Amps) 5.0 5.0 2.5 0.9 0.9 -8 0 -3 0 5.0 5.0 2.5 -1 0 0 -8 0 Powor Dissipation (Watts) Part Number 6.25 6.25 6.25 VP1008B VP0808B VP0300B


    OCR Scan     		PDF VP1008B VP0808B VP0300B O-237Ã VP1008M VP0808M VP0300M VP1008L VP0808L 14-Pln VP0300B VP0300M VP0808L VQ2001P VQ2004P

    VP100

    Abstract: VP1001P VP0300B VP0300M VP0808B VP0808L VP0808M VP1008B VP1008L VP1008M
    Text: MOSPOWER Selector Guide Continued P-Channel MOSPOWER Device Breakdown Voltage (Volts) •100 rDS(on) (Ohms) >D Continuous (Amps) 5.0 5.0 2.5 0.9 0.9 5.0 5.0 2.5 Powor Dissipation (Watts) Part Number 6.25 6.25 6.25 VP1008B VP0808B VP0300B 0.37 0.37 0.48 1.0


    OCR Scan     		PDF VP1008B VP0808B VP0300B O-237Ã VP1008M VP0808M VP0300M VP1008L VP0808L 14-Pln VP100 VP1001P VP0300B VP0300M VP0808L

    VP0300M

    Abstract: VP0300B
    Text: Tem ic VP0300B/L/M, VQ2001J/P Siliconix P-Channel Enhancement-Mode MOS Transistors Product Summary Part N um ber «•DS on M ax (Q ) VoSith) (V) I d (A) VP0300B 2 .5 @ V gs = - 1 2 V - 2 to -4 .5 -1 .2 5 VP0300L 2 .5 @ V GS = - 1 2 V - 2 to -4 .5 -0 .3 2


    OCR Scan     		PDF VP0300B/L/M, VQ2001J/P VP0300B VP0300L VP0300M VQ2001J VQ2001P P-38283--

    S4 12

    Abstract: No abstract text available
    Text: VQ2001 SERIES P-Channel Enhancement-Mode _ MOS Transistor Arrays 14-PIN DIP SIDEBRAZE PRODUCT SUMMARY PART NUMBER V BR|DSS V Q 2001J -3 0 VQ 2001P 2 -3 0 2 TOP VIEW Dual-ln-Line Package Id (A PACKAGE - 0 .6 Plastic - 0 .6 S idebraze Ï7] D4


    OCR Scan     		PDF VQ2001 2001J 2001P 14-PIN S4 12

    VP0300M

    Abstract: 150EC VP0300L
    Text: T e m ic siiiconh_ VP0300B/L/M, VQ2001J/P P-Channel Enhancement-Mode MOS Transistors Product Summary Part Number • V br dss Min (V) ; ■ Id (A) r DS(on) Max (Q) VGS(th) (V) VP0300B 2.5@ V GS= -1 2 V - 2 to -4.5 -1.25 VP0300L 2.5 @ VGS = -1 2 V


    OCR Scan     		PDF VP0300B/L/M, VQ2001J/P VP0300B VP0300L VP0300M VQ2001J VQ2001P AN804, P-38283--Rev. 150EC

    VP0808M

    Abstract: IN400 VP0300B VP0300M VP0808B VP0808L VP1008B VP1008L VP1008M VQ2001P
    Text: MOSPOWER Selector Guide Continued P-Channel MOSPOWER Device Breakdown Voltage (Volts) rDS(on) (Ohms) >D Continuous (Amps) •100 -8 0 -3 0 5.0 5.0 2.5 0.9 0.9 100 -8 0 -3 0 5.0 5.0 2.5 -1 0 0 -8 0 Powor Dissipation (Watts) Part Number 6.25 6.25 6.25 VP1008B


    OCR Scan     		PDF VP1008B VP0808B VP0300B O-237Ã VP1008M VP0808M VP0300M VP1008L VP0808L 14-Pln IN400 VP0300B VP0300M VP0808L VQ2001P

    0300L

    Abstract: 70217 marking code Sk transistors
    Text: VP0300L/LS, VQ2001J/P Vishay Siliconix P-Channel 30-V D-S MOSFETs PRODUCT SUMMARY Part Number r DS(on) M a * (Î2) v GS(th) (V) Id (A) VP0300L 2.5 V q S = - 1 2 V - 2 to -4 .5 -0 .3 2 VP0300LS 2 .5 ® V a s = -1 2 V - 2 to -4 .5 -0 .5 2 @ V gs = - 1 2 V


    OCR Scan     		PDF VP0300L/LS, VQ2001J/P VP0300L VP0300LS VQ2001J VQ2001P -226A 16-Jul-01 VP0300LVLS, 0300L 70217 marking code Sk transistors