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    VPS0560 Search Results

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    BG3230

    Abstract: BG3230R VPS05604
    Text: BG3230_BG3230R 4 DUAL N-Channel MOSFET Tetrode 5 6 • Low noise gain controlled input stages of UHFand VHF-tuners with 5V supply voltage • Two AGC amplifiers in one single package 2 • Integrated stabilized bias network 3 1 VPS05604 • Integrated gate protection diodes


    Original     		PDF BG3230 BG3230R VPS05604 BG3230 EHA07215 OT363 Feb-27-2004 BG3230R VPS05604

    BCR08PN

    Abstract: VPS05604
    Text: BCR08PN NPN/PNP Silicon Digital Transistor Array 4  Switching circuit, inverter, interface circuit, 5 6 driver circuit  Two galvanic internal isolated NPN/PNP Transistors in one package  Built in bias resistor (R1=2.2k, R2=47k) 2 3 1 VPS05604 Tape loading orientation


    Original     		PDF BCR08PN VPS05604 OT-363 EHA07193 EHA07176 OT363 Jul-12-2001 BCR08PN VPS05604

    EHA07182

    Abstract: BAV70S VPS05604 6C12 5a2 DIODE C2A26 marking 5a2
    Text: BAV 70S Silicon Switching Diode Array 4 5 • For high-speed switching applications 6 • Internal galvanic isolated diode arrays in one package • Common cathode 2 3 1 VPS05604 C1/C2 A2 6 5 A1 4 Di2 Di1 1 2 3 A1 A2 C1/C2 EHA07182 Type Marking BAV 70S A4s


    Original     		PDF VPS05604 EHA07182 OT-363 Tstg10 Oct-07-1999 EHB00068 EHB00065 EHA07182 BAV70S VPS05604 6C12 5a2 DIODE C2A26 marking 5a2

    BAT62-08S

    Abstract: VPS05604
    Text: BAT62-08S Silicon Schottky Diode Array Preliminary data 4  Low barrier diode for detectors up to GHz 5 6 frequencies 2 Tape loading orientation Top View 654 Marking on SOT-363 package for example W1s corresponds to pin 1 of device C1 C2 C3 6 5 4 3 1 VPS05604


    Original     		PDF BAT62-08S OT-363 VPS05604 EHA07193 EHA07291 OT363 EHD07061 900MHz EHD07063 BAT62-08S VPS05604

    BAS40-07W

    Abstract: No abstract text available
    Text: BAS40-07W 3 Silicon Schottky Diode 4  General-purpose diode for high-speed switching  Circuit protection  Voltage clamping 2  High-level detection and mixing 4 1 3 2 1 VPS05605 EHA07008 Type BAS40-07W Marking Pin Configuration 47s 1=C1 2=C2 3=A2 4=A1 -


    Original     		PDF BAS40-07W VPS05605 EHA07008 OT343 EHB00039 Aug-23-2001 EHB00038 BAS40-07W

    BC847PN SOT363

    Abstract: VPS05604 BC847PN Marking 1ps sot
    Text: BC847PN NPN/PNP Silicon AF Transistor Array 4 • For AF input stages and driver applications 5 6 • High current gain • Low collector-emitter saturation voltage • Two galvanic internal isolated NPN/PNP Transistors in one package 2 3 1 VPS05604 Tape loading orientation


    Original     		PDF BC847PN VPS05604 OT-363 EHA07193 EHA07177 OT363 EHP00365 EHP00364 EHP00368 BC847PN SOT363 VPS05604 BC847PN Marking 1ps sot

    BCR129S

    Abstract: VPS05604
    Text: BCR129S NPN Silicon Digital Transistor Array 4  Switching circuit, inverter, interface circuit, 5 6 driver circuit  Two galvanic internal isolated Transistors with good matching in one package  Built in bias resistor (R1=10k) 2 3 1 C1 B2 E2 6 5 4 VPS05604


    Original     		PDF BCR129S VPS05604 EHA07265 OT363 Aug-29-2001 BCR129S VPS05604

    BCR169S

    Abstract: VPS05604 marking WSs
    Text: BCR169S PNP Silicon Digital Transistor Array 4  Switching circuit, inverter, interface circuit, 5 6 driver circuit  Two galvanic internal isolated Transistors with good matching in one package  Built in bias resistor (R1=4.7k) 2 3 1 VPS05604 C1 B2 E2


    Original     		PDF BCR169S VPS05604 EHA07266 OT363 Jul-12-2001 BCR169S VPS05604 marking WSs

    marking code g1s

    Abstract: Q62702-F1774 SOT 343 MARKING BF
    Text: BF 2030W Silicon N-Channel MOSFET Tetrode Preliminary data 3 • For low noise, high gain controlled 4 input stages up to 1GHz • Operating voltage 5V 2 1 VPS05605 ESD: Electrostatic discharge sensitive device, observe handling precaution Type Marking Ordering Code


    Original     		PDF VPS05605 Q62702-F1774 OT-343 Jun-05-1998 marking code g1s Q62702-F1774 SOT 343 MARKING BF

    BAT68-07W

    Abstract: No abstract text available
    Text: BAT68-07W Silicon Schottky Diodes 3  For mixer applications in the VHF / UHF range 4  For high-speed switching applications 2 1 VPS05605 4 1 3 2 EHA07008 ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking BAT68-07W 87s


    Original     		PDF BAT68-07W VPS05605 EHA07008 OT343 EHD07103 EHD07104 Aug-08-2001 BAT68-07W

    Silicon N Channel MOSFET Tetrode

    Abstract: Q62702-F1772 marking code g1s BF 2000W
    Text: BF 2000W Silicon N Channel MOSFET Tetrode Target data sheet 3 • Short-channel transistor 4 with high S/C quality factor • For low-noise, gain-controlled input stages up to 1 GHz 2 1 Type Marking Ordering Code BF 2000W NDs Q62702-F1772 VPS05605 Pin Configuration


    Original     		PDF Q62702-F1772 VPS05605 OT-343 Silicon N Channel MOSFET Tetrode Q62702-F1772 marking code g1s BF 2000W

    BCR198S

    Abstract: VPS05604
    Text: BCR198S PNP Silicon Digital Transistor Array 4  Switching circuit, inverter, interface circuit, 5 6 driver circuit  Two galvanic internal isolated Transistors with good matching in one package  Built in bias resistor (R1=47k, R2=47k) 2 3 1 VPS05604


    Original     		PDF BCR198S VPS05604 EHA07173 OT363 Jul-12-2001 BCR198S VPS05604

    Untitled

    Abstract: No abstract text available
    Text: BAT 64-07W Silicon Schottky Diodes 3 • For low-loss, fast-recovery, meter protection, 4 bias isolation and clamping applications • Integrated diffused guard ring • Low forward voltage 2 1 VPS05605 4 1 3 2 EHA07008 ESD: Electrostatic discharge sensitive device, observe handling precaution!


    Original     		PDF 4-07W VPS05605 EHA07008 OT-343 50/60Hz, EHB00059 Oct-07-1999

    marking 81W

    Abstract: No abstract text available
    Text: BAR 81W Silicon RF Switching Diode 3  Design for use in shunt configuration 4  High shunt signal isolation  Low shunt insertion loss 2 1 Type Marking BAR 81W BBs Pin Configuration 1=A 2=C 3=A VPS05605 Package 4=C SOT-343 Maximum Ratings Parameter Symbol


    Original     		PDF VPS05605 OT-343 Oct-05-1999 100MHz marking 81W

    6A1 diode

    Abstract: BAS70-06S VPS05604
    Text: BAS70-06S Silicon Schottky Diode Array 4  General-purpose diode for high-speed switching 5 6  Circuit protection  Voltage clamping  High-level detecting and mixing 2 A1/A2 C2 C1 6 5 4 3 1 VPS05604 Di2 Di1 1 2 3 C1 C2 A1/A2 EHA07288 Type Marking BAS70-06S


    Original     		PDF BAS70-06S VPS05604 EHA07288 OT363 EHB00042 EHB00043 EHB00044 EHB00045 Jul-06-2001 6A1 diode BAS70-06S VPS05604

    ZL 58

    Abstract: No abstract text available
    Text: BFP 183W NPN Silicon RF Transistor 3  For low-noise, high-gain broadband amplifiers at 4 collector currents from 2 mA to 30 mA  fT = 8 GHz F = 1.2 dB at 900 MHz 2 1 VPS05605 ESD: Electrostatic discharge sensitive device, observe handling precaution! Type


    Original     		PDF VPS05605 OT-343 Oct-12-1999 ZL 58

    Untitled

    Abstract: No abstract text available
    Text: BFP 136W NPN Silicon RF Transistor 3  For power amplifier in DECT and PCN systems 4  fT = 5.5GHz  Gold metalization for high reliability 2 1 VPS05605 ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking BFP 136W PAs Pin Configuration


    Original     		PDF VPS05605 OT-343 900MHz Oct-12-1999

    Untitled

    Abstract: No abstract text available
    Text: BF 2030W Silicon N-Channel MOSFET Tetrode 3  For low noise, high gain controlled 4 input stages up to 1GHz  Operating voltage 5V Drain AGC HF Input G2 G1 R G1 2 HF Output + DC 1 VPS05605 GND VGG EHA07461 ESD: Electrostatic discharge sensitive device, observe handling precaution!


    Original     		PDF VPS05605 EHA07461 OT-343 Feb-08-2001

    BFP620

    Abstract: BFP620 acs BFP620 applications note GFT45
    Text: BFP620 NPN Silicon Germanium RF Transistor 3 4  High gain low noise RF transistor  Provides outstanding performance for a wide range of wireless applications 2  Ideal for CDMA and WLAN applications  Outstanding noise figure F = 0.7 dB at 1.8 GHz 1 VPS05605


    Original     		PDF BFP620 VPS05605 OT343 Apr-07-2003 BFP620 BFP620 acs BFP620 applications note GFT45

    IC 7481 pin configuration

    Abstract: IC 7481 ev 2816 01177 ic rom 2816 BFP520 BFP520 application notes k 3683 transistor
    Text: SIEGET 45 BFP520 NPN Silicon RF Transistor 3  For highest gain low noise amplifier 4 at 1.8 GHz and 2 mA / 2 V Outstanding Gms = 23 dB Noise Figure F = 0.95 dB  For oscillators up to 15 GHz 2  Transition frequency fT = 45 GHz 1 VPS05605  Gold metallization for high reliability


    Original     		PDF BFP520 VPS05605 OT343 50Ohm 45GHz -j100 Sep-26-2001 IC 7481 pin configuration IC 7481 ev 2816 01177 ic rom 2816 BFP520 BFP520 application notes k 3683 transistor

    BFS483

    Abstract: G1410 VPS05604
    Text: BFS483 NPN Silicon RF Transistor 4  For low-noise, high-gain broadband amplifier 5 6 at collector currents from 2 mA to 28 mA  f T = 8 GHz F = 1.2 dB at 900 MHz  Two galvanic internal isolated 2 3 1 Transistors in one package VPS05604 C1 E2 B2 6 5 4 TR2


    Original     		PDF BFS483 VPS05604 EHA07196 OT363 Jun-27-2001 BFS483 G1410 VPS05604

    wgs-1

    Abstract: BCR116S VPS05604
    Text: BCR116S NPN Silicon Digital Transistor Array 4  Switching circuit, inverter, interface circuit, 5 6 driver circuit  Two galvanic internal isolated Transistors with good matching in one package  Built in bias resistor (R1=4.7k, R 2=47k) 2 3 1 VPS05604


    Original     		PDF BCR116S VPS05604 EHA07174 OT363 Dec-12-2001 wgs-1 BCR116S VPS05604

    BF2030W

    Abstract: No abstract text available
    Text: BF2030W Silicon N-Channel MOSFET Tetrode 3  For low noise, high gain controlled 4 input stages up to 1GHz  Operating voltage 5V Drain AGC HF Input G2 G1 R G1 2 HF Output + DC 1 VPS05605 GND VGG EHA07461 ESD: Electrostatic discharge sensitive device, observe handling precaution!


    Original     		PDF BF2030W VPS05605 EHA07461 OT343 Oct-05-2001 BF2030W

    MARKING 74s

    Abstract: PF 7004S
    Text: SIEMENS BAS 70-04S Silicon Schottky Diode Array 4 • General-purpose diode for high-speed switching 5 • Circuit protection • Voltage clamping • High-level detecting and mixing n y W C 1/A 2 C2 R n fi è 3 2 A1 1 VPS05604 ESD: Electrostatic discharge sensitive device, observe handling precautions!


    OCR Scan     		PDF 70-04S VPS05604 70-04S Q62702-A3468 OT-363 MARKING 74s PF 7004S