ats 1138
Abstract: CA94538 MWT-970 hp 3101 dale 9407
Text: MWT-970 GP/LN/HP y-y ÊJL£ 2 GHz LOW NOISE 12 GHz HIGH POWER PACKAGED GaAs FET DEVICE ^ M IC R O W A V E T E C H N O L O G Y MICROülAVE TECHNOLOGY 4268 Solar Wày Fremont, C A 94538 415-651-6700 FAX 415-651*2208 37E D • blSMlDÜ GGG0QS3 7 BMRIilV *7“ 3 J-
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MWT-970
CA94538
ats 1138
hp 3101
dale 9407
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ttl fujisu
Abstract: fujitsu oscillator M2 TYN 208 equivalent B9007 MB90075-PF
Text: FUJITSU LTP S3E D 374R75b 0003234 2T0 * 7 ^ 7 March 1992 Editton 1.0 DATA SHEET FUJITSU MB90075 ONSCREEN DISPLAY CONTROLLER FOR NTSC/PAL DESCRIPTION The MB90075 CMOS On-screen Display Controller OSDC is a peripheral LSI that displays 288 alphanumeric character« (24 rowsx 12Gnes) and figures onTVscreenbyamicrooontroller.
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374R75b
MB90075
MB90075
12Gnes)
ttl fujisu
fujitsu oscillator M2
TYN 208 equivalent
B9007
MB90075-PF
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S2V 97
Abstract: No abstract text available
Text: TOSHIBA 2SK2496 TOSHIBA FIELD EFFECT TRANSISTOR GaAs N CHANNEL SINGLE GATE MODULATION DOPE TYPE 2 S K2 49 6 Unit in mm SHF BAND LOW NOISE AMPLIFIER APPLICATIONS • • Low Noise Figure : NF = 0.9dB f=12GHz High Gain : Ga = lldB (f=12GHz) MAXIMUM RATINGS (Ta = 25°C)
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2SK2496
12GHz)
12GHz
S2V 97
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Z166
Abstract: 2SK2332
Text: TOSHIBA 2SK2332 TOSHIBA FIELD EFFECT TRANSISTOR GaAs N CHANNEL SINGLE GATE MODULATION DOPE TYPE 2SK2332 SHF BAND LOW NOISE AMPLIFIER APPLICATIONS • Low Noise Figure : NF = 0.65dB f=12GHz • High Gain Unit in mm 2.16±0.2 : Ga = lld B (f=12GHz) MAXIMUM RATINGS (Ta = 25°C)
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2SK2332
12GHz)
12GHz
Z166
2SK2332
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2SK2332
Abstract: SHF 0088 Z166
Text: TOSHIBA 2SK2332 TOSHIBA FIELD EFFECT TRANSISTOR GaAs N CHANNEL SINGLE GATE MODULATION DOPE TYPE 2SK2332 Unit in mm SHF BAND LO W NOISE AM PLIFIER APPLICATIONS • • Low Noise Figure : NF = 0.65dB f=12GHz High Gain : Ga = lldB (f=12GHz) 2.16±0.2 M A X IM U M RATINGS (Ta = 25°C)
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2SK2332
12GHz)
12GHz
2SK2332
SHF 0088
Z166
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transistor c 3228
Abstract: 2SK2496 2SK24
Text: TOSHIBA 2SK2496 TOSHIBA FIELD EFFECT TRANSISTOR GaAs N CHANNEL SINGLE GATE MODULATION DOPE TYPE 2SK2496 SHF BAND LOW NOISE AMPLIFIER APPLICATIONS • Low Noise Figure : NF = 0.9dB f=12GHz • High Gain Unit in mm 2.16±0.2 : Ga = lld B (f=12GHz) MAXIMUM RATINGS (Ta = 25°C)
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2SK2496
12GHz)
12GHz
transistor c 3228
2SK2496
2SK24
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22m1
Abstract: 2SK2331
Text: T O S H IB A 2SK2331 TOSHIBA FIELD EFFECT TRANSISTOR GaAs N CHANNEL SINGLE GATE MODULATION DOPE TYPE 2SK2331 Unit in mm SHF BAND LOW NOISE AMPLIFIER APPLICATIONS • Low Noise Figure : NF = 0.45dB f=12GHz • High Gain 2.16±0.2 : Ga = lldB (f=12GHz) MAXIMUM RATINGS (Ta = 25°C)
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2SK2331
12GHz)
Z-167,
12GHz
22m1
2SK2331
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Untitled
Abstract: No abstract text available
Text: TO SHIBA 2SK2332 TOSHIBA FIELD EFFECT TRANSISTOR GaAs N CHANNEL SINGLE GATE MODULATION DOPE TYPE 2 S K2 3 3 2 Unit in mm SHF BAND LO W NOISE AM PLIFIER APPLICATIONS • • Low Noise Figure : NF = 0.65dB f=12GHz High Gain : Ga = lldB (f=12GHz) M A X IM U M RATINGS (Ta = 25°C)
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2SK2332
12GHz)
12GHz
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Untitled
Abstract: No abstract text available
Text: T O S H IB A 2SK2331 TOSHIBA FIELD EFFECT TRANSISTOR GaAs N CHANNEL SINGLE GATE MODULATION DOPE TYPE 2SK2331 Unit in mm SHF BAND LO W NOISE AM PLIFIER APPLICATIONS • • Low Noise Figure : NF = 0.45dB f=12GHz High Gain : Ga = lldB (f=12GHz) M A X IM U M RATINGS (Ta = 25°C)
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2SK2331
12GHz)
12GHz
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Untitled
Abstract: No abstract text available
Text: TO SHIBA 2SK2496 TOSHIBA FIELD EFFECT TRANSISTOR GaAs N CHANNEL SINGLE GATE MODULATION DOPE TYPE 2SK2496 Unit in mm SHF BAND LO W NOISE AM PLIFIER APPLICATIONS • • Low Noise Figure : NF = 0.9dB f=12GHz High Gain : Ga = lldB (f=12GHz) M A X IM U M RATINGS (Ta = 25°C)
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2SK2496
12GHz)
12GHz
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2SK2331
Abstract: No abstract text available
Text: T O S H IB A 2SK2331 TOSHIBA FIELD EFFECT TRANSISTOR GaAs N CHANNEL SINGLE GATE MODULATION DOPE TYPE 2SK2331 U nit in mm SHF BAND LO W NOISE AM PLIFIER APPLICATIONS • Low Noise Figure : NF = 0.45dB f=12GHz • High Gain 2.16±0.2 : Ga = lld B (f=12GHz)
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2SK2331
12GHz)
Z-167,
12GHz
2SK2331
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transistor c 3228
Abstract: transistor a 1837 2SK2496
Text: TOSHIBA 2SK2496 TOSHIBA FIELD EFFECT TRANSISTOR GaAs N CHANNEL SINGLE GATE MODULATION DOPE TYPE 2SK2496 Unit in mm SHF BAND LOW NOISE AMPLIFIER APPLICATIONS • • Low Noise Figure : NF = 0.9dB f=12GHz High Gain : Ga = lldB (f=12GHz) 2 .1 6 ± 0 .2 MAXIMUM RATINGS (Ta = 25°C)
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2SK2496
12GHz)
12GHz
transistor c 3228
transistor a 1837
2SK2496
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2SK1844
Abstract: 2SK1845 12GHz 2SK1688 2SK1689 2SK1996 SHF-3 dbs3
Text: - 248 - a A s F E T is a * a * 2 S K 16 8 8 «ST mmsm. [hemt mm ¡ W 'c • DBS .w # RF 2 S K 1 6 8 9 T O tfiT EF 2nd # 2 S K 1 8 4 4 B it : SHF 3 V X - 9 RF ¡a « ? # » :N ^ + HEMT. • 2 S <1 8 4 5 SHF w > < - 9 § tt V -4 P d ( b W) 200 Ti (°C)
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12GHz
12GHz*
12GHz
12GHz)
100ju
Id-10iA,
2SK1844
2SK1845
2SK1688
2SK1689
2SK1996
SHF-3
dbs3
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MwT-770
Abstract: HP 3379
Text: -l= - '3 - 2 S MwT-770 G P /LN /H P 12 GHz LOW NOISE PACKAGED GaAs FET DEVICE M icro W a VE T E C H N O L O G Y niCROUAVE TECHNOLOGY 4268 Solar Way Fremont, CA 94538 510-651-6700 FAX510-651-2208 MAE D blHMlDD D D D D I S T 4 4 T • ■ PIRlilV OUTUNE 70
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MwT-770
5io-65i-67oo
12GHz
HP 3379
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FET 748
Abstract: MGF4951A MGF4951 MGF4952A 4952A ta 1223
Text: MITSUBISHI SEMICONDUCTOR <GaAs FET> MGF4951A/4952A SUPER LOW NOISE InGaAs HEMT Leadless Ceramic Package Outline Drawing DESCRIPTION The MGF495*A super-low-noise HEMT (High Electron Mobility Transistor) is designed for use in C to K band amplifiers. The lead-less ceramic package assures minimum parasitic losses.
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MGF4951A/4952A
MGF495
12GHz
MGF4951A
MGF4952A
12GHz
MGF4951A
FET 748
MGF4951
MGF4952A
4952A
ta 1223
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2SK1845
Abstract: 3sk85 2SK408 equivalent 3SK1 3sk156 3sk217 3SK228 3SK103 2sc464 2SC3511
Text: HITACHI Ultra High Frequency Devices DATA BOOK H IT A C H I ADE-41 CONTENTS • GENERAL INFORMATION. . . . . . 5 Si Bipolar Transistors.
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ADE-41
D-8013
2SK1845
3sk85
2SK408 equivalent
3SK1
3sk156
3sk217
3SK228
3SK103
2sc464
2SC3511
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50n05
Abstract: C181 VPS 12g 60N05 OM50N05SA OM50N05ST OM50N06SA OM50N06ST OM60N05SA OM60N06SA
Text: OM6ONO6SA OM60N05SA OM50N06ST OM50N06SA OM50N05SA OM50N05ST LOW VOLTAGE, LOW R DS on POWER MOSFETS IN HERMETIC ISOLATED PACKAGE 50V And 60V Ultra Low RDs(on) Power MOSFETs In TO-257 And TO-254 Isolated Packages FEATURES • • • • • Isolated Hermetic Metal Packages
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OM60N06SA
OM60N05SA
OM50N06ST
OM50N06SA
QM50N05SA
OM50N05ST
O-257
O-254
MIL-S-19500,
50n05
C181
VPS 12g
60N05
OM50N05SA
OM50N05ST
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Untitled
Abstract: No abstract text available
Text: MwT-A9 18 GHz High Gain, Low Noise GaAs FET M ic r o w a v e T e c h n o l o g y r1 ¥ +24.5 dBm OUTPUT POWER AT 12 GHz 9 dB SMALL SIGNAL GAIN AT 12 GHz 1.6 dB NOISE FIGURE AT 12 GHz 0.3 MICRON REFRACTORY METAL/GOLD GATE 750 MICRON GATE WIDTH CHOICE OF CHIP AND THREE
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HMF0314
Abstract: SUPERCOM high power FET transistor s-parameters
Text: ^7 'HARRIS nU SEMICONDUCTOR- DE jMaDSSb'i QD00Ü07 t. / 4302269 HARRIS MW ^SEMICONDUCTOR • — ■ ■ ■ ' ’ 97D 00007 1 D — - < r — -, HMF-0310 2 -2 0 g h z HIGH GAIN GoAs FET 15M E PRODUCT DATA NOVEMBER 1987 HARRIS MICROWAVE SEMICONDUCTOR DEVICE OUTLINE
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HMF-0310
9-03100-B©
HMF0314
SUPERCOM
high power FET transistor s-parameters
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VPS 12g
Abstract: No abstract text available
Text: Philips Semiconductors Product specification PowerMOS transistors Avalanche energy rated FEATURES • • • • * PHP7N60E, PHB7N60E, PMW7N60E SYMBOL Repetitive Avalanche Rated Fast switching Stable off-state characteristics High thermal cycling performance
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PHP7N60E,
PHB7N60E,
PMW7N60E
PHP7N60E
T0220AB)
PHW7N60E
-ID/100
VPS 12g
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Untitled
Abstract: No abstract text available
Text: MICROWAVE TECHNOLOGY bbE D • L.1241DD DDDD3DG 5 5 6 ■ NRblV MwT -12 GP / SP / HP 18GHz HIGH POWER GaAs FETCHIP kàâ kM MicroWave Technology 4268 Solar Way Fremont, CA 94538 510-651-6700 FAX 510-651-2208 FEATURES • 0.5 WATT POWER OUTPUT AT 12 GHZ • +37 dBm THIRD ORDER INTERCEPT
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1241DD
18GHz
MwT-12
-F94-
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low noise pseudomorphic
Abstract: No abstract text available
Text: MwT - H4 26 GHz Low Noise Pseudomorphic HEMT GaAs FET_ MicroWave Technology 4268 Solar Way Fremont, CA 94538 510-651-6700 FAX 510-651-2208 FEATURES — 50 • 0.9 dB NOISE FIGURE AT 12 GHZ • HIGH ASSOCIATED GAIN 1241 8.4 •0.3 MICRON REFRACTORY METAL /GOLD GATE
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2430A
Abstract: MGFC2430 MGF2430A MGF2430
Text: A m it s u b is h i Die_ MGFC2430 Package MGF2430A ELECTRONIC DEVICE GROUP DESCRIPTION MGFC2430 FEATURES The MGFC2400 series GaAs FETs are N-channel Schottky gate devices designed for high frequency, medium and high power applications. • High output power
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MGFC2400
250mW*
MGF2400
MGFC2430
MGF2430A
2430-T02
2430A
MGF2430A
MGF2430
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2N5484
Abstract: No abstract text available
Text: 2N5484 2N5486* CASE 29-04, STYLE 5 TO-92 TO-226AA MAXIM UM RATINGS Rating Symbol Value VdG 25 Vdc V g SR 25 Vdc Drain-Gate Voltage Reverse Gate-Source Voltage 'd 30 mAdc 'G(f) 10 mAdc Pd 350 2.8 mW mW/°C T j. Tstg - 65 to +150 °C Drain Current Forward Gate Current
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2N5484
2N5486*
O-226AA)
b3b7254
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