SENJU 221CM5
Abstract: Senju 2062-221CM5-32-11 senju printing speed Senju oz-2062 PC10 senju-metal panasert 2535M
Text: Technical Note 1-a Recommended Foot pattern for MGF495*A Point Point 1: 1: The The distance distance between between approaching approaching foot foot patterns patterns isis keeping 0.3 mm or more. keeping 0.3 mm or more. → (→ Prevent Prevent short short circuit
|
Original
|
PDF
|
MGF495
NM-PC10
2062-221CM5-32-11
QL-1105E
SENJU 221CM5
Senju
2062-221CM5-32-11
senju printing speed
Senju oz-2062
PC10
senju-metal
panasert
2535M
|
HEMT marking K
Abstract: MGF4953A
Text: < Low Noise GaAs HEMT > MGF4953A Leadless ceramic package DESCRIPTION The MGF4953A super-low noise InGaAs HEMT High Electron Mobility Transistor is designed for use in C to K band amplifiers. The lead-less ceramic package assures minimum parasitic losses.
|
Original
|
PDF
|
MGF4953A
MGF4953A
12GHz
000pcs/reel
HEMT marking K
|
MGF4951A
Abstract: MGF4952A
Text: June/2004 MITSUBISHI SEMICONDUCTOR <GaAs FET> MGF4951A/MGF4952A SUPER LOW NOISE InGaAs HEMT Leadless Ceramic Package DESCRIPTION Outline Drawing The MGF4951A/MGF4952A super-low noise HEMT (High Electron Mobility Transistor) is designed for use in C to K band
|
Original
|
PDF
|
June/2004
MGF4951A/MGF4952A
MGF4951A/MGF4952A
12GHz
MGF4951A
MGF4952A
MGF4951A
MGF4952A
|
Untitled
Abstract: No abstract text available
Text: June/2004 MITSUBISHI SEMICONDUTOR <GaAs FET> MGF4951A/MGF4952A SUPER LOW NOISE InGaAs HEMT Leadless Ceramic Package DESCRIPTION The MGF4951A/MGF4952A super-low noise HEMT (High Electron Mobility Transistor) is designed for use in C to K band amplifiers.
|
Original
|
PDF
|
June/2004
MGF4951A/MGF4952A
MGF4951A/MGF4952A
12GHz
MGF4951A
MGF4952A
12GHz
|
MGF4953A
Abstract: No abstract text available
Text: Feb./2000 Preliminary MITSUBISHI SEMICONDUCTOR <GaAs FET> MGF4953A/MGF4954A SUPER LOW NOISE InGaAs HEMT Leadless Ceramic Package Gs NFmin. Associated gain VDS=2V, Minimum noise figure ID=10mA MGF4953A f=12GHz MGF4954A Fig. 1 Top 12.0 - Side 13.5 0.45 0.65
|
Original
|
PDF
|
MGF4953A/MGF4954A
12GHz
MGF4953A
MGF4954A
|
InGaAs HEMT mitsubishi
Abstract: transistor P7d MGF4957A Fet P7d
Text: June/2004 MITSUBISHI SEMICONDUCTOR <GaAs FET> MGF4957A SUPER LOW NOISE InGaAs HEMT Leadless Ceramic Package DESCRIPTION Outline Drawing The MGF4957A super-low noise HEMT (High Electron Mobility Transistor) is designed for use in C to K band amplifiers. The lead-less ceramic package assures minimum parasitic losses.
|
Original
|
PDF
|
June/2004
MGF4957A
MGF4957A
12GHz
3000ps,
InGaAs HEMT mitsubishi
transistor P7d
Fet P7d
|
mgf4953a
Abstract: mgf4953 low noise x band hemt transistor MGF4954A InGaAs HEMT mitsubishi transistor GaAs FET s parameters
Text: June/2004 MITSUBISHI SEMICONDUCTOR <GaAs FET> MGF4953A/MGF4954A SUPER LOW NOISE InGaAs HEMT Leadless Ceramic Package DESCRIPTION Outline Drawing The MGF4953A/MGF4954A super-low noise HEMT (High Electron Mobility Transistor) is designed for use in C to K band
|
Original
|
PDF
|
June/2004
MGF4953A/MGF4954A
MGF4953A/MGF4954A
12GHz
MGF4953A
MGF4954A
mgf4953a
mgf4953
low noise x band hemt transistor
MGF4954A
InGaAs HEMT mitsubishi
transistor GaAs FET s parameters
|
Untitled
Abstract: No abstract text available
Text: Ｊｕｎｅ/2006 MITSUBISHI SEMICONDUTOR <GaAs FET> MGF4953B SUPER LOW NOISE InGaAs HEMT Leadless Ceramic Package DESCRIPTION Outline Drawing The MGF4953B super-low noise HEMT (High Electron Mobility Transistor) is designed for use in K band amplifiers.
|
Original
|
PDF
|
MGF4953B
MGF4953B
20GHz
3000pcs
June/2006
|
Untitled
Abstract: No abstract text available
Text: June/2004 MITSUBISHI SEMICONDUCTOR <GaAs FET> MGF4955A SUPER LOW NOISE InGaAs HEMT Leadless Ceramic Package DESCRIPTION Outline Drawing The MGF4955A super-low noise HEMT (High Electron Mobility Transistor) is designed for use in C to K band amplifiers. The lead-less ceramic package assures minimum parasitic losses.
|
Original
|
PDF
|
June/2004
MGF4955A
MGF4955A
12GHz
3000pcs
|
MGF4953A
Abstract: mgf4953 s2v 92 S2V40
Text: June/2004 MITSUBISHI SEMICONDUTOR <GaAs FET> MGF4953A/MGF4954A SUPER LOW NOISE InGaAs HEMT Leadless Ceramic Package DESCRIPTION The MGF4953A/MGF4954A super-low noise HEMT (High Electron Mobility Transistor) is designed for use in C to K band amplifiers.
|
Original
|
PDF
|
June/2004
MGF4953A/MGF4954A
MGF4953A/MGF4954A
12GHz
MGF4953A
MGF4954A
12GHz
MGF4953A
mgf4953
s2v 92
S2V40
|
TRANSISTOR C 4460
Abstract: InGaAs HEMT mitsubishi MGF4953B MGF495
Text: Nｏｖ./2006 MITSUBISHI SEMICONDUTOR <GaAs FET> MGF4953B SUPER LOW NOISE InGaAs HEMT Leadless Ceramic Package DESCRIPTION Outline Drawing The MGF4953B super-low noise HEMT (High Electron Mobility Transistor) is designed for use in K band amplifiers. The lead-less ceramic package assures minimum parasitic losses.
|
Original
|
PDF
|
MGF4953B
MGF4953B
20GHz
3000pcs
TRANSISTOR C 4460
InGaAs HEMT mitsubishi
MGF495
|
low noise hemt transistor
Abstract: InGaAs HEMT mitsubishi MGF4951A MGF4952A
Text: MITSUBISHI SEMICONDUTOR <GaAs FET> MGF4951A/MGF4952A SUPER LOW NOISE InGaAs HEMT Leadless Ceramic Package DESCRIPTION Outline Drawing The MGF4951A/MGF4952A super-low noise HEMT (High Electron Mobility Transistor) is designed for use in C to K band amplifiers.
|
Original
|
PDF
|
MGF4951A/MGF4952A
MGF4951A/MGF4952A
12GHz
MGF4951A
MGF4952A
ORD148
50-ohm
low noise hemt transistor
InGaAs HEMT mitsubishi
MGF4951A
MGF4952A
|
Untitled
Abstract: No abstract text available
Text: < Low Noise GaAs HEMT > MGF4953A Leadless ceramic package DESCRIPTION The MGF4953A super-low noise InGaAs HEMT High Electron Mobility Transistor is designed for use in C to K band amplifiers. The lead-less ceramic package assures minimum parasitic losses.
|
Original
|
PDF
|
MGF4953A
MGF4953A
12GHz
000pcs/reel
|
Untitled
Abstract: No abstract text available
Text: < Low Noise GaAs HEMT > MGF4953B Leadless ceramic package DESCRIPTION The MGF4953B super-low noise InGaAs HEMT High Electron Mobility Transistor is designed for use in K band amplifiers. The lead-less ceramic package assures minimum parasitic losses. Outline Drawing
|
Original
|
PDF
|
MGF4953B
MGF4953B
20GHz
000pcs/reel
MGF4953B-01)
MGF4953B-70al
|
|
|
MGF4953B
Abstract: MGF4953B-70
Text: < Low Noise GaAs HEMT > MGF4953B Leadless ceramic package DESCRIPTION The MGF4953B super-low noise InGaAs HEMT High Electron Mobility Transistor is designed for use in K band amplifiers. The lead-less ceramic package assures minimum parasitic losses. Outline Drawing
|
Original
|
PDF
|
MGF4953B
MGF4953B
20GHz
000pcs/reel
000pcs/reel
MGF4953B-01)
MGF4953B-70)
MGF4953B-70
|
mitsubishi ordering information
Abstract: MGF4955A InGaAs HEMT mitsubishi transistor P7d mitsubishi package
Text: June/2004 MITSUBISHI SEMICONDUCTOR <GaAs FET> MGF4955A SUPER LOW NOISE InGaAs HEMT Leadless Ceramic Package DESCRIPTION Outline Drawing The MGF4955A super-low noise HEMT (High Electron Mobility Transistor) is designed for use in C to K band amplifiers. The lead-less ceramic package assures minimum parasitic losses.
|
Original
|
PDF
|
June/2004
MGF4955A
MGF4955A
12GHz
3000pcs
mitsubishi ordering information
InGaAs HEMT mitsubishi
transistor P7d
mitsubishi package
|
MGF4919G
Abstract: SP*02N60 SPP11N80 to-220 smd MGF1601 SPW47N60 MGF0905A SPW11N80 SPP11N60 SPP20N60
Text: МИКРОСХЕМЫ ТРАНЗИСТОРЫ 1 2 ВЫСОКОВОЛЬТНЫЕ ПОЛЕВЫЕ ТРАНЗИСТОРЫ CoolMOS CoolMOS полевые транзисторы Infineon – это новое поколение высоковольтных силовых транзисторов со сверхнизким сопротивлением в открытом состоянии
|
Original
|
PDF
|
SPP02N60
SPP03N60
SPP04N60
SPP07N60
SPP11N60
SPP20N60
SPW11N60
SPW20N60
SPW47N60
SPP02N80
MGF4919G
SP*02N60
SPP11N80
to-220 smd
MGF1601
SPW47N60
MGF0905A
SPW11N80
SPP11N60
SPP20N60
|
C42V5964
Abstract: MGF1302 TRANSISTOR MGF1601 MGFC1402 M57721 M67760LC H2 MARKING SOT-89 mmIC 2SC5125 MITSUBISHI M57710-A M68776
Text: Please Read “Notes” First! Contents Notes Contact Addresses MITSUBISHI ELECTRIC CORPORATION Contents Si Devices GaAs Devices Optical Devices Applications Quality Assurance and Reliability Testing Optical Modules Top Page © MITSUBISHI ELECTRIC CORPORATION
|
Original
|
PDF
|
M6STA-005VA/WA/SA
MF-156STA-006VA/WA/SA
MF-156SRA-002VA/WA/SA
MF-622STA-004VA/WA/SA
MF-622STA-005VA/WA/SA
MF-622STA-006VA/WA/SA
MF-622SRA-002VA/WA/SA
MF-2500STA-002VA/WA,
003VA/WA,
004VA/WA
C42V5964
MGF1302 TRANSISTOR
MGF1601
MGFC1402
M57721
M67760LC
H2 MARKING SOT-89 mmIC
2SC5125
MITSUBISHI M57710-A
M68776
|
MGFS45H2201G
Abstract: MGFS40H2201G MGF0909A sirio mgfc36v-a QVC12 MGF1907A MGF4961 mgf4941al mitsubishi mgf
Text: GaAs DEVICES GENERAL CATALOG MITSUBISHI GaAs solutions for communication networks in the information era. Multimedia Network 1 PRODUCTS 3 APPLICATION 7 PACKAGE 9 BS / CS PDC/GSM/CDMA Multimedia Network WiMAX Features We e provide provide a variety variety
|
Original
|
PDF
|
H-CR587-J
KI-0612
MGFS45H2201G
MGFS40H2201G
MGF0909A
sirio
mgfc36v-a
QVC12
MGF1907A
MGF4961
mgf4941al
mitsubishi mgf
|
MGF4951A
Abstract: Low Noise HEMT 12g transistor
Text: Jan./1999 [ M ITS U B IS H I S E M IC O N D U C T O R Preliminary <G aAs FET> MGF4951A S U P E R LO W N O IS E InGaAs H E M T Leadless Ceramic Package) DESCRIPTION Outline Drawing The M G F4951A super-low-noise HEM T (High Electron Mobility Transistor) is designed for use in C to K band amplifiers.
|
OCR Scan
|
PDF
|
MGF4951A
MGF4951A
12GHz
mgf495ia
Low Noise HEMT
12g transistor
|
mgf4953a
Abstract: MGF4954A
Text: MITSUBISHI SEMICONDUTOR <GaAs FET> MG F4953A/MG F4954A SUPER LOW NOISE InGaAs HEMT Leadless Ceramic Package DESCRIPTION Outline Drawing The MGF4953A/MGF4954A super-low noise HEMT (High Electron Mobility Transistor) is designed for use in C to K band amplifiers.
|
OCR Scan
|
PDF
|
F4953A/MG
F4954A
MGF4953A/MGF4954A
12GHz
MGF4953A
MGF4954A
MGF4953A
June/2000
MGF4954A
|
LOW HEMT
Abstract: Hemt transistor
Text: Jan./1999 Preliminary MITSUBISHI SEMICONDUCTOR <GaAs FET> MGF4951A SUPER LOW NOISE InGaAs HEMT (Leadless Ceramic Package) DESCRIPTION Outline Drawing The MGF4951A super-low-noise HEMT (High Electron Mobility Transistor) is designed for use in C to K band amplifiers.
|
OCR Scan
|
PDF
|
MGF4951A
MGF4951A
12GHz
12GHz
lD-10mA
LOW HEMT
Hemt transistor
|
FET 748
Abstract: MGF4951A MGF4951 MGF4952A 4952A ta 1223
Text: MITSUBISHI SEMICONDUCTOR <GaAs FET> MGF4951A/4952A SUPER LOW NOISE InGaAs HEMT Leadless Ceramic Package Outline Drawing DESCRIPTION The MGF495*A super-low-noise HEMT (High Electron Mobility Transistor) is designed for use in C to K band amplifiers. The lead-less ceramic package assures minimum parasitic losses.
|
OCR Scan
|
PDF
|
MGF4951A/4952A
MGF495
12GHz
MGF4951A
MGF4952A
12GHz
MGF4951A
FET 748
MGF4951
MGF4952A
4952A
ta 1223
|
low noise x band hemt transistor
Abstract: Gan hemt transistor x band MGF4953A
Text: MITSUBISHI SEMICONDUTOR <GaAs FET> MGF4953A/MGF4954A _ SUPER LOW NOISE InGaAs HEMT Leodess Ceramic Package D ES C R IP TIO N Outline Drawing The MGF4953A/MGF4954A super low noise HEMT (High Electron M oM ty Transistor) is designed for use in C to K band
|
OCR Scan
|
PDF
|
MGF4953A/MGF4954A
MGF4953A/MGF4954A
12GHz
MGF4953A
MGr49S4A
May/2000
low noise x band hemt transistor
Gan hemt transistor x band
MGF4953A
|
