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Abstract: No abstract text available
Text: HARRIS Mil S E M I C O N D U C T O R 4bE D • MBDESbR GDODIT? 4 «HMS T ~ 3 I^ S ~ - HARRIS H M F -03140 -200 Gain Optimized GaAs FET 2 -1 4 GHz PRODUCT DATA Features * +19 dBm Output Power with 9.5 dB Associated Gain at 8 GHz * Custom Electrical Test and Screening
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F-03140-200
noftheHMF03100-200.
Harr15
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harris 723
Abstract: samsung 1622
Text: SAMSUNG ELECTRONICS INC HARRIS bOE H 7^4145 D M F - 3 GDllñSfi 1 4 TSS «SMGK -200 Gain Optimized GaAs FET 2-14 GHz PRODUCT DATA Features • +19 dBm Output Power with 9.5 dB Associated Gain at 8 GHz Custom Electrical Test and Screening Available for Source Control Drawings
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F-03140-200
F03100-200.
harris 723
samsung 1622
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HMF0314
Abstract: SUPERCOM high power FET transistor s-parameters
Text: ^7 'HARRIS nU SEMICONDUCTOR- DE jMaDSSb'i QD00Ü07 t. / 4302269 HARRIS MW ^SEMICONDUCTOR • — ■ ■ ■ ' ’ 97D 00007 1 D — - < r — -, HMF-0310 2 -2 0 g h z HIGH GAIN GoAs FET 15M E PRODUCT DATA NOVEMBER 1987 HARRIS MICROWAVE SEMICONDUCTOR DEVICE OUTLINE
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HMF-0310
9-03100-B©
HMF0314
SUPERCOM
high power FET transistor s-parameters
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