VP0808L
Abstract: VP1008L
Text: VP0808L, VP1008L Vishay Siliconix P-Channel Enhancement-Mode MOSFET Transistors PRODUCT SUMMARY Part Number V BR DSS Min (V) rDS(on) Max (W) VGS(th) (V) ID (A) VP0808L –80 5 @ VGS = –10 V –2 to –4.5 –0.28 VP1008L –100 5 @ VGS = –10 V –2 to –4.5
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Original
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VP0808L,
VP1008L
VP0808L
O-226AA)
S-00530--Rev.
03-Apr-00
VP0808L
VP1008L
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VP0808L
Abstract: VP1008L
Text: VP0808L, VP1008L Vishay Siliconix P-Channel 80- and 100-V D-S MOSFETs PRODUCT SUMMARY Part Number V(BR)DSS Min (V) rDS(on) Max (W) VGS(th) (V) ID (A) VP0808L –80 5 @ VGS = –10 V –2 to –4.5 –0.28 VP1008L –100 5 @ VGS = –10 V –2 to –4.5 –0.28
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Original
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VP0808L,
VP1008L
VP0808L
18-Jul-08
VP0808L
VP1008L
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VP0808L
Abstract: VP1008L
Text: VP0808L, VP1008L Vishay Siliconix P-Channel 80- and 100-V D-S MOSFETs PRODUCT SUMMARY Part Number V(BR)DSS Min (V) rDS(on) Max (W) VGS(th) (V) ID (A) VP0808L –80 5 @ VGS = –10 V –2 to –4.5 –0.28 VP1008L –100 5 @ VGS = –10 V –2 to –4.5 –0.28
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Original
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VP0808L,
VP1008L
VP0808L
08-Apr-05
VP0808L
VP1008L
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PDF
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VP0808B
Abstract: VP0808L VP0808M VP1008B VP1008L VP1008M
Text: VP0808B/L/M, VP1008B/L/M Siliconix PĆChannel EnhancementĆMode MOS Transistors Product Summary Part Number V BR DSS Min (V) VP0808B VP0808L VP0808M VP1008B VP1008L VP1008M -80 -100 1 rDS(on) Max (W) VGS(th) (V) ID (A) 5 @ VGS = -10 V 5 @ VGS = -10 V 5 @ VGS = -10 V
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Original
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VP0808B/L/M,
VP1008B/L/M
VP0808B
VP0808L
VP0808M
VP1008B
VP1008L
VP1008M
O226AA)
37655--Rev.
VP0808B
VP0808L
VP0808M
VP1008B
VP1008L
VP1008M
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PDF
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siliconix marking code
Abstract: VP0808L VP1008L
Text: VP0808L, VP1008L Vishay Siliconix P-Channel 80- and 100-V D-S MOSFETs PRODUCT SUMMARY Part Number V(BR)DSS Min (V) rDS(on) Max (W) VGS(th) (V) ID (A) VP0808L –80 5 @ VGS = –10 V –2 to –4.5 –0.28 VP1008L –100 5 @ VGS = –10 V –2 to –4.5 –0.28
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Original
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VP0808L,
VP1008L
VP0808L
O-226AA)
S-04279--Rev.
16-Jul-01
siliconix marking code
VP0808L
VP1008L
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PDF
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VP8080
Abstract: VP1008 VP0808 VP0808B VP0808L VP1008B VP1008L
Text: VP0808 VP1008 P-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information BVDSS / BVDGS RDS ON (max) ID(ON) (min) Order Number / Package TO-39 TO-92 -80V 5Ω -1.1A VP0808B VP0808L -100V 5Ω -1.1A VP1008B VP1008L Advanced DMOS Technology High Reliability Devices
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Original
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VP0808
VP1008
VP0808B
VP0808L
-100V
VP1008B
VP1008L
VP8080
VP1008
VP0808
VP0808B
VP0808L
VP1008B
VP1008L
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PDF
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VP0808B
Abstract: VP0808L VP0808M VP1008B VP1008L VP1008M
Text: VP0808B/L/M, VP1008B/L/M P-Channel Enhancement-Mode MOSFET Transistors Product Summary Part Number V BR DSS Min (V) rDS(on) Max (W) VGS(th) (V) ID (A) 5 @ VGS = –10 V –2 to –4.5 –0.88 5 @ VGS = –10 V –2 to –4.5 –0.28 VP0808M 5 @ VGS = –10 V
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Original
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VP0808B/L/M,
VP1008B/L/M
VP0808M
VP1008B
VP0808B
VP0808L
VP1008L
VP1008M
O-226AA)
P-37655--Rev.
VP0808B
VP0808L
VP0808M
VP1008B
VP1008L
VP1008M
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PDF
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TCA780
Abstract: TFK U 111 B TFK U 4614 B TFK S 186 P TFK U 217 B TFK BP w 41 n TFK BPW 41 N Tfk 880 TFK 148 TDSR 5150 G
Text: Industry Part Number 1N3245 1N3611GP 1N3612GP 1N3613GP 1N3614GP 1N3725 1N3957GP 1N4001GP 1N4002GP 1N4003GP 1N4004GP 1N4005GP 1N4006GP 1N4007GP 1N4245GP 1N4246GP 1N4247GP 1N4248GP 1N4249GP 1N4678.1N4717 1N4728A.1N4761A 1N4933GP 1N4934GP 1N4935GP 1N4936GP
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Original
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1N3245
1N3611GP
1N3612GP
1N3613GP
1N3614GP
1N3725
1N3957GP
1N4001GP
1N4002GP
1N4003GP
TCA780
TFK U 111 B
TFK U 4614 B
TFK S 186 P
TFK U 217 B
TFK BP w 41 n
TFK BPW 41 N
Tfk 880
TFK 148
TDSR 5150 G
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PDF
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mosfet cross reference
Abstract: pj 929 diode pj 1229 diode BSS250 VN0109N5 pj 66 diode pj 929 BSS295 "direct replacement" BSS295 "cross reference" pj 69 diode
Text: Selector Guides Selector Guides MOSFETs The Supertex enhancement-mode and depletion-mode MOSFET families utilize both vertical and lateral double diffused MOS processes. They feature low parasitic capacitances with interdigitated structures for high-frequency operation. Their low gate threshold voltage is
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Original
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T0-92
options4206A
ZVN4206C
ZVN4206E
ZVN4306A
TN2106K1
VN2210N3
TN0606N3
TN0606N6
mosfet cross reference
pj 929 diode
pj 1229 diode
BSS250
VN0109N5
pj 66 diode
pj 929
BSS295 "direct replacement"
BSS295 "cross reference"
pj 69 diode
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PDF
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Untitled
Abstract: No abstract text available
Text: Temic Siliconix_YP0808B/L/M, YP1008B/L/M P-Channel Enhancement-Mode MOS Transistors Product Summary Part Number rDS on Max (Q) V(BR)DSS Min (V) VP0808B VP0808L VP0808M VP1008B VP1008L VP1008M 5 @ V GS= 5 @ V GS= 5 @ V Gs = 5 @ V Gs = 5 @ V Gs = 5 @ V Gs =
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OCR Scan
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YP0808B/L/M,
YP1008B/L/M
VP0808B
VP0808L
VP0808M
VP1008B
VP1008L
VP1008M
O-226AA)
P-37655--
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PDF
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VP0808B
Abstract: VP0808L VP0808M VP1008B VP1008L VP1008M VQ2006J VQ2006P
Text: VPMH10 Part Numbers: VP1008L, VP0808L, VP1008M, VP0808M, VQ2006P, VQ2006J, VP1008B, VP0808B Leakage Currente Ohmic Region Vos— d r a in Tc—CASE TEMPERATURE °C SO U R C E VOLTAGE (VOLTS) ON Resistance Characteristics O Z I -60 -2 0 20 60 100 140 180
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OCR Scan
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VPMH10
300us,
VP1008L,
VP0808L,
VP1008M,
VP0808M,
VQ2006P,
VQ2006J,
VP1008B,
VP0808B
VP0808B
VP0808L
VP0808M
VP1008B
VP1008L
VP1008M
VQ2006J
VQ2006P
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PDF
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Untitled
Abstract: No abstract text available
Text: _ VP0808 VP1008 _ P-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information Order Number / Package b v dss/ ^ D S O N I d (O N) BVdgs (max) (min) TO-39 TO-92 -80V 5Q -1.1A VP0808B VP0808L -100V 5Q -1.1A VP1008B VP1008L Advanced DMOS Technology
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OCR Scan
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VP0808
VP1008
VP0808B
VP1008B
-100V
VP0808L
VP1008L
VP1008
VP0808
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PDF
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VP8080
Abstract: No abstract text available
Text: V P 0808 in c . VP1008 P-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information Standard Commercial Devices Order Number / Package b v dss/ ^DS ON ' d(ON) b v dos (max) (min) TO-39 TO-92 -80V 5£i -1.1A VP0808B VP0808L -100V 5£i -1.1A VP1008B VP1008L
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OCR Scan
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VP1008
VP0808B
VP1008B
VP0808L
VP1008L
-100V
VP1008
VP0808
VP8080
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PDF
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VP1008
Abstract: No abstract text available
Text: Super te x inc. VP0808 VP1008 P-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information BVdss / B V cos Order Number / Package R d S ON *D<ON) (max) (min) TO-39 TO-92 VP0808L VP1008L -80V 5Ü -1.1A VP0808B -100V 5U -1.1A VP1008B Advanced DMOS Technology
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OCR Scan
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VP0808
VP1008
VP0808L
VP1008L
VP0808B
-100V
VP1008B
300tis
000437D
VP1008
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PDF
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Untitled
Abstract: No abstract text available
Text: VP0808L, VP1008L Vishay Siliconix P-Channel 80- and 100-V D-S MOSFETs PRODUCT SUMMARY Part Number V {B R )D S S (V ) rD S (on) Max (Q) I d (A) V GS ( t h ) ( V ) VP0808L -8 0 5 @ V Gs = - 1 0 V - 2 t o -4 .5 -0 .2 8 VP1Q08L -1 0 0 5 @ V qs = - 1 0 V - 2 to -4 .5
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OCR Scan
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VP0808L,
VP1008L
VP0808L
VP1Q08L
S-04279--
16-Jui-01
O-226AA)
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PDF
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Untitled
Abstract: No abstract text available
Text: V P 0 80 8 Supertex inc. ^ VP1008 P-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information Standard Commercial Devices B ^dss ^ Order Number / Package ^DS ON ^O(ON) b v dgs (max) (min) TO-39 TO-92 -80V 5i2 -1.1 A VP0808B VP0808L -100V 5 fi -1.1A
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OCR Scan
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VP1008
VP0808B
VP1008B
VP0808L
VP1008L
-100V
VP1008
VP0808
300ms
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PDF
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Untitled
Abstract: No abstract text available
Text: VP0808B/L/M, VP1008B/L/M P-Channel Enhancement-Mode MOSFET Transistors Product Summary P a rt N u m b er V BR DSS M in (V) rDS(on) M ax (Q) V c sw o tV ) 5 @ VGS- - 1 0 V -2 to -4.5 -0.88 5 @ VGs - -10 V -2 to -4.5 -0.28 VP0808M 5 @ V os - -10 V -2 to -4.5
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OCR Scan
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VP0808B/L/M,
VP1008B/L/M
VP0808B
VP0808L
VP0808M
VP1008B
VP1008L
VP1008M
Appli-12
P-37655--
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PDF
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JR 3610
Abstract: RT 083 206af 44464
Text: TELEDYNE COMPONENTS - 2ÖE D Mi ÛTiTtOE 000 ^40^ b • ■ -T-29-25 — cfTlHJlß2l0\7zi V P 0 8 0 8 , V P 1 00 8 SEMICONDUCTOR P-CHANNEL ENHANCEMENT-MODE D-MOS POWER FETs ORDERING INFORMATION Sorted CWp* tn Wsffla Pack TO-226AA (TO-82 Plastic Package
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OCR Scan
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----------------T-29-25
O-226AA
O-237
808CHP
VP08Q8L
VP1008CHP
VP1008L
VP1008M
-100\i
VP1008
JR 3610
RT 083
206af
44464
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PDF
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vp0300m
Abstract: VP0300B VP0808B VP0808L VP0808M VP1008B VP1008L VP1008M VQ2001P VQ2004P
Text: MOSPOWER Selector Guide Continued P-Channel MOSPOWER Device Breakdown Voltage (Volts) •100 rDS(on) (Ohms) >D Continuous (Amps) 5.0 5.0 2.5 0.9 0.9 -8 0 -3 0 5.0 5.0 2.5 -1 0 0 -8 0 Powor Dissipation (Watts) Part Number 6.25 6.25 6.25 VP1008B VP0808B VP0300B
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OCR Scan
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VP1008B
VP0808B
VP0300B
O-237Ã
VP1008M
VP0808M
VP0300M
VP1008L
VP0808L
14-Pln
vp0300m
VP0300B
VP0808L
VQ2001P
VQ2004P
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PDF
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2sk to-92
Abstract: VNS012A Siliconix v020 VNS009A VNS009D VNS013A VNT0080 VNT008A VNT009A
Text: - 330 - 13=25=0 Si £ tt Vd s or € * Vd g % (V) Vg s Id * /CH (V) (A) 4# •u Pd Ig s s loss max * /CH (W) (nA) Vg s (V) Vd s (V) (kiA) (V) (V) (nA) 14 (Ta=25°C) b(on) Vd s = Vg s Ciss g fs Coss Crss ft & flt % V g s =0 (max) *typ V g s (0) (V) *typ (A)
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OCR Scan
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VNS009A
O-204AA
VNS009D
O-220AB
VNS012A
O-204AE
VQ1006P
VQ2001J
VQ2001P
v02004j
2sk to-92
Siliconix
v020
VNS013A
VNT0080
VNT008A
VNT009A
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PDF
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VP0808B
Abstract: VP0300B VP0300M VP0808L VP0808M VP1008B VP1008L VP1008M VQ2001P VQ2004P
Text: MOSPOWER Selector Guide Continued P-Channel MOSPOWER Device Breakdown Voltage (Volts) •100 rDS(on) (Ohms) >D Continuous (Amps) 5.0 5.0 2.5 0.9 0.9 -8 0 -3 0 5.0 5.0 2.5 0.37 0.37 0.48 -1 0 0 -8 0 5.0 5.0 -9 0 -6 0 -3 0 5.0 5.0 -90 -60 -30 5.0 5.0 2.0 -8 0
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OCR Scan
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VP1008B
VP0808B
VP0300B
O-237Ã
VP1008M
VP0808M
VP0300M
VP1008L
VP0808L
14-Pln
VP0300B
VP0300M
VP0808L
VQ2001P
VQ2004P
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PDF
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BSR78
Abstract: VP0300M VP0808L 041 itt diode VP0300B VP0808B VP0808M VP1008B VP1008L VP1008M
Text: MOSPOWER Selector Guide Continued P-Channel MOSPOWER Device Breakdown Voltage (Volts) rDS(on) (Ohms) >D Continuous (Amps) •100 -8 0 -3 0 5.0 5.0 2.5 0.9 0.9 100 -8 0 -3 0 5.0 5.0 2.5 -1 0 0 -8 0 Powor Dissipation (Watts) Part Number 6.25 6.25 6.25 VP1008B
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OCR Scan
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VP1008B
VP0808B
VP0300B
O-237Ã
VP1008M
VP0808M
VP0300M
VP1008L
VP0808L
14-Pln
BSR78
VP0300M
VP0808L
041 itt diode
VP0300B
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PDF
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VPDS06
Abstract: No abstract text available
Text: VPDS06 CT*Siliconix incorporated TYPICAL CHARACTERISTICS T ransconductance C pF I d ÌA) V DS (V) On-Resistance vs. Junction Temperature 's (A) V SD (V) Revised (02/11/91) -0 .3 -0 .6 -0 .9 -1 .2 V GS (V) -1 .5 -1 .8 -2.1 6-203 ffX 'Sificonix VPDS06 in c o r p o r a te d
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OCR Scan
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VPDS06
6-204VP1008B)
VPDV10
VPDS06
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PDF
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VP0808M
Abstract: VQ2006P VP0300B VP0300M VP0808B VP0808L VP1008B VP1008L VP1008M VQ2001P
Text: MOSPOWER Selector Guide Continued P-Channel MOSPOWER Device Breakdown Voltage (Volts) •100 -8 0 -3 0 rDS(on) (Ohms) >D Continuous (Amps) 5.0 5.0 2.5 0.9 0.9 -8 0 -3 0 5.0 5.0 2.5 0.37 0.37 0.48 -1 0 0 -8 0 5.0 5.0 -9 0 -6 0 -3 0 -90 -60 -30 1.3 Powor Dissipation
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OCR Scan
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VP1008B
VP0808B
VP0300B
O-237Ã
VP1008M
VP0808M
VP0300M
VP1008L
VP0808L
14-Pln
VQ2006P
VP0300B
VP0300M
VP0808L
VQ2001P
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PDF
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