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    VN67AK Search Results

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    VN67AK Price and Stock

    Intersil Corporation VN67AK

    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Bristol Electronics VN67AK 2 1
    • 1 $12
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    Quest Components VN67AK 1
    • 1 $16
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    VN67AK Datasheets (7)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    VN67AK General Electric Power Transistor Data Book 1985 Scan PDF
    VN67AK Intersil Data Book 1981 Scan PDF
    VN67AK Unknown Basic Transistor and Cross Reference Specification Scan PDF
    VN67AK Unknown Shortform Datasheet & Cross References Data Short Form PDF
    VN67AK Unknown Shortform Transistor PDF Datasheet Short Form PDF
    VN67AK Unknown Shortform Transistor PDF Datasheet Short Form PDF
    VN67AK Unknown Semiconductor Master Cross Reference Guide Scan PDF

    VN67AK Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    VN66AK

    Abstract: VN67AK VN87
    Text: tSztni-donductoi ^Ptoaueti, Una. TELEPHONE: 973 376-2922 (212)227-6005 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. VN35AK, VN66AK, VN67AK, VN98AK, VN99AK n-Channel Enhancement-mode Vertical Power MOSFET FEATURES APPLICATIONS • High speed, high current switching


    Original     		PDF VN35AK, VN66AK, VN67AK, VN98AK, VN99AK VN35AK VN67AK VN66AK VN67AK VN87

    mosfet cross reference

    Abstract: pj 929 diode pj 1229 diode BSS250 VN0109N5 pj 66 diode pj 929 BSS295 "direct replacement" BSS295 "cross reference" pj 69 diode
    Text: Selector Guides Selector Guides MOSFETs The Supertex enhancement-mode and depletion-mode MOSFET families utilize both vertical and lateral double diffused MOS processes. They feature low parasitic capacitances with interdigitated structures for high-frequency operation. Their low gate threshold voltage is


    Original     		PDF T0-92 options4206A ZVN4206C ZVN4206E ZVN4306A TN2106K1 VN2210N3 TN0606N3 TN0606N6 mosfet cross reference pj 929 diode pj 1229 diode BSS250 VN0109N5 pj 66 diode pj 929 BSS295 "direct replacement" BSS295 "cross reference" pj 69 diode

    vn66

    Abstract: VN67AK
    Text: <$Etni~L,onduetoi Lpioaueti, One. 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. TELEPHONE: 973 376-2922 (212)227-6005 FAX: (973) 376-8960 VN35AK Series 1.2 AMPERES 35-90 VOLTS N-CHANNEL HELD EFFECT POWER TRANSISTOR CASE STYLE TO-205AD(TO-39) DIMENSION* ARE IN INCHH AND (MILLIMETCRS)


    Original     		PDF VN35AK O-205AD OJ16-0 VN66AK VN98AK VN67AK VN99AK vn66 VN67AK

    VN66AK

    Abstract: 98AK VN67 analog VN98AK VN99AK VN 98AK VN35AK VN67AK vn99ak.90v
    Text: 5gnn VN35AK, VN66AK, VN67AK, VN98AK, VN99AK n-Channel Enhancement-mode Vertical Power MOSFET FEATURES APPLICATIONS • High speed, high current switching • High current analog switches • High gain-bandwidth product • RF power amplifiers • Inherently temperature stable


    OCR Scan     		PDF VN35AK, VN66AK, VN67AK, VN98AK, VN99AK VN35AK VN67AK VN99AK. VN66AK 98AK VN67 analog VN98AK VN 98AK VN35AK VN67AK vn99ak.90v

    IVN5000TND

    Abstract: vn30ab 1VN5001 vn66ak VN35AK IVN5000TNE IVN5000 VN99AK IVN5000TNF IVN5000TNG
    Text: orciim ^ FEATURES IVN5000/1 TN Seri»* n-Channel Enhancementonode Vertical Power MOSFET These devices are non-zener improved equivalents of the follow ing series. • High speed, high current switching • High gain-bandwldth product • Inherently temperature stable


    OCR Scan     		PDF IVN5000/1 IVN5000TND, IVN5001TND. IVN5000TNE, IVN5001TNE. IVN5000TNF, IVN5001TNF IVN5000TNG, IVN5001TNG IVN5000TND vn30ab 1VN5001 vn66ak VN35AK IVN5000TNE IVN5000 VN99AK IVN5000TNF IVN5000TNG

    EATON CM20A

    Abstract: A5 GNE mosfet Hall sensor 44e 402 2N8491 FTG 1087 S TRIAC BCR 10km FEB3T smd transistor marking 352a sharp EIA 577 sharp color tv schematic diagram MP-130 M mh-ce 10268
    Text: Table of Contents N E W A R K E L E C T R O N IC S “Where serving you begins even before you call” Newark Electronics is a UNIQUE broadline distributor of electronic components, dedicated to provid­ ing complete service, fast delivery and in-depth inventory. Our main


    OCR Scan     		PDF

    aeg diode Si 61 L

    Abstract: aeg diodes D6 SGS Transistors BC23B SILICONIX U315 MZ306 BY126 bcv59 ac128 2N3680
    Text: Semiconductor Data Book Semiconductor Data Book Characteristics of approx. 10 000 Transistors, FETs, UJTs, Diodes, Rectifiers, Optical Semiconductors, Triacs and SCRs, Compiled by A. M. Ball Head of Physics, Teign School Newnes Technical Books Newnes Technical Books


    OCR Scan     		PDF 11tA0A12 A025A A0290 U0U55 A0291 A0292 A0305 A0306 A0A56 A0A59 aeg diode Si 61 L aeg diodes D6 SGS Transistors BC23B SILICONIX U315 MZ306 BY126 bcv59 ac128 2N3680

    siliconix fet

    Abstract: Transistor E112 FET N-Channel JFET TRANSISTOR REPLACEMENT GUIDE j201 E112 jfet jfet bfw10 terminals JFET BFW10 SPECIFICATIONS 4856a mosfet Transistor E112 FET FETs in Balanced Mixers Ed Oxner equivalent components FET BFW10
    Text: s S ilic o n ix FET Design Catalog 1979 Siliconix incorporated Printed in U.S.A. Siliconix incorporated reserves the right to make changes in the circuitry or specifications in this book at any time w ithout notice. Siliconix incorporated assumes no responsibility


    OCR Scan     		PDF J-23548 K24123 i39-40i NZ3766 53-C-03 siliconix fet Transistor E112 FET N-Channel JFET TRANSISTOR REPLACEMENT GUIDE j201 E112 jfet jfet bfw10 terminals JFET BFW10 SPECIFICATIONS 4856a mosfet Transistor E112 FET FETs in Balanced Mixers Ed Oxner equivalent components FET BFW10

    VN66AK

    Abstract: 99AK VN98AK VN66 VN35AK VN67AK VN99AK T0-205AD
    Text: VN35AK Series G^MIF3°[MìS@ FUIT FIELD EFFECT POWER TRANSISTOR This series of N-Channel Enhancement-mode Power MOSFETs utilizes GE’s advanced Power DM O S technology to achieve low on-resistance with excellent device ruggedness and reliability. This design has been optimized to give superior performance in


    OCR Scan     		PDF VN66AK VN98AK VN35AK VN67AK VN99AK VN66AK 99AK VN98AK VN66 VN35AK VN99AK T0-205AD