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    VN30AB Search Results

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    VN30AB Price and Stock

    Intersil Corporation VN30ABA

    POWER-MOS FET, FIELD EFFECT POWER TRANSISTOR, TO-39
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Quest Components VN30ABA 3
    • 1 $15
    • 10 $11.25
    • 100 $11.25
    • 1000 $11.25
    • 10000 $11.25
    		Buy Now

    VN30AB Datasheets (9)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    VN30AB Intersil Data Book 1981 Scan PDF
    VN30AB Unknown Shortform Datasheet & Cross References Data Short Form PDF
    VN30AB Unknown Basic Transistor and Cross Reference Specification Scan PDF
    VN30AB Unknown Shortform Transistor PDF Datasheet Short Form PDF
    VN30AB Unknown Shortform Transistor PDF Datasheet Short Form PDF
    VN30AB Unknown Shortform Transistor PDF Datasheet Short Form PDF
    VN30AB Unknown Semiconductor Master Cross Reference Guide Scan PDF
    VN30ABA General Electric Power Transistor Data Book 1985 Scan PDF
    VN30ABA Unknown Semiconductor Master Cross Reference Guide Scan PDF

    VN30AB Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    S0211

    Abstract: VN03000 2SK738 nec 500t 2sk738 mosfet S0215 3N175 MPF6659 motorola *6659 2SK73
    Text: MOSFET Item Number Part Number Manufacturer V BR OSS (V) loss Max (A) Po Max (W) ros (on) (Ohms) gFS Min (S) VGS(th) CI. Max tr Max t, Max TOper Max (V) (F) (8) (8) eC) 8.0n 8.0n 13n 8.0n 13n 125 J 125 J 125 J 125 J 125 J 150 150 150 150 150 TO•72 TO·72


    Original     		PDF 2N7109 S0215 ZVN3302B TN0102N3 TN0602N3 TN0102N2 TN0602N2 SOF8104 S0211 VN03000 2SK738 nec 500t 2sk738 mosfet 3N175 MPF6659 motorola *6659 2SK73

    mosfet cross reference

    Abstract: pj 929 diode pj 1229 diode BSS250 VN0109N5 pj 66 diode pj 929 BSS295 "direct replacement" BSS295 "cross reference" pj 69 diode
    Text: Selector Guides Selector Guides MOSFETs The Supertex enhancement-mode and depletion-mode MOSFET families utilize both vertical and lateral double diffused MOS processes. They feature low parasitic capacitances with interdigitated structures for high-frequency operation. Their low gate threshold voltage is


    Original     		PDF T0-92 options4206A ZVN4206C ZVN4206E ZVN4306A TN2106K1 VN2210N3 TN0606N3 TN0606N6 mosfet cross reference pj 929 diode pj 1229 diode BSS250 VN0109N5 pj 66 diode pj 929 BSS295 "direct replacement" BSS295 "cross reference" pj 69 diode

    VN35AB

    Abstract: VN67AB VN89AB
    Text: , Una. VN3OAB, VN35AB, VN67AB, VN89AB, VN90AB 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. n-Channel Enhancement-mode Vertical Power MOSFET FEATURES APPLICATIONS • High speed, high current switching • Switching power supplies • Current sharing capability when paralleled


    Original     		PDF VN35AB, VN67AB, VN89AB, VN90AB VN30AB. VN35AB VIM67A8 VN89AB VN30AB, VN35AB VN67AB VN89AB

    vn30ab

    Abstract: VN67ABA VN35ABA VN90ABA VN30ABA VN89ABA
    Text: VN30ABA Series PSMiFa-GffiQ MÛT 1.2 AMPERES 35-90 VOLTS r DS(ON = 2.5-5.0 Cl FIELD EFFECT POWER TRANSISTOR This series of N-Channel Enhancement-mode Power MOSFETs utilizes GE’s advanced Power DM OS technology to achieve low on-resistance with excellent device ruggedness and reliability.


    OCR Scan     		PDF VN30ABA VN30ABA VN35ABA VN67ABA VN89ABA VN90ABA vn30ab VN90ABA

    VN30AB

    Abstract: VN67AB VN89AB VN90AB VN35AB mosfet buffers output current 100mA VM67AB
    Text: VN30AB, VN35AB, VN67AB, VN89AB, VN90AB n-Channel Enhancement-mode Vertical Power MOSFET F EA T U R ES APPLICATIO N S • High speed, high current switching • Switching power supplies • Current sharing capability when paralleled • DC to DC inverters • Directly interface to CMOS, DTL, TTl. logic


    OCR Scan     		PDF VN30AB, VN35AB, VN67AB, VN89AB, VN90AB VN35AB VN67A8 VN89AB VN90AB VN30AB VN67AB VN89AB VN35AB mosfet buffers output current 100mA VM67AB

    IVN5000TND

    Abstract: vn30ab 1VN5001 vn66ak VN35AK IVN5000TNE IVN5000 VN99AK IVN5000TNF IVN5000TNG
    Text: orciim ^ FEATURES IVN5000/1 TN Seri»* n-Channel Enhancementonode Vertical Power MOSFET These devices are non-zener improved equivalents of the follow ing series. • High speed, high current switching • High gain-bandwldth product • Inherently temperature stable


    OCR Scan     		PDF IVN5000/1 IVN5000TND, IVN5001TND. IVN5000TNE, IVN5001TNE. IVN5000TNF, IVN5001TNF IVN5000TNG, IVN5001TNG IVN5000TND vn30ab 1VN5001 vn66ak VN35AK IVN5000TNE IVN5000 VN99AK IVN5000TNF IVN5000TNG

    EATON CM20A

    Abstract: A5 GNE mosfet Hall sensor 44e 402 2N8491 FTG 1087 S TRIAC BCR 10km FEB3T smd transistor marking 352a sharp EIA 577 sharp color tv schematic diagram MP-130 M mh-ce 10268
    Text: Table of Contents N E W A R K E L E C T R O N IC S “Where serving you begins even before you call” Newark Electronics is a UNIQUE broadline distributor of electronic components, dedicated to provid­ ing complete service, fast delivery and in-depth inventory. Our main


    OCR Scan     		PDF

    siliconix fet

    Abstract: Transistor E112 FET N-Channel JFET TRANSISTOR REPLACEMENT GUIDE j201 E112 jfet jfet bfw10 terminals JFET BFW10 SPECIFICATIONS 4856a mosfet Transistor E112 FET FETs in Balanced Mixers Ed Oxner equivalent components FET BFW10
    Text: s S ilic o n ix FET Design Catalog 1979 Siliconix incorporated Printed in U.S.A. Siliconix incorporated reserves the right to make changes in the circuitry or specifications in this book at any time w ithout notice. Siliconix incorporated assumes no responsibility


    OCR Scan     		PDF J-23548 K24123 i39-40i NZ3766 53-C-03 siliconix fet Transistor E112 FET N-Channel JFET TRANSISTOR REPLACEMENT GUIDE j201 E112 jfet jfet bfw10 terminals JFET BFW10 SPECIFICATIONS 4856a mosfet Transistor E112 FET FETs in Balanced Mixers Ed Oxner equivalent components FET BFW10