Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    VK200* FERROXCUBE Search Results

    VK200* FERROXCUBE Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    TB172

    Abstract: FERROXCUBE VK200 vk200 VK200 ferrite choke stackpole 57-1845-24b vk200 rf choke Stackpole 57-9074 Stackpole ferrite Toroid 57-9322 57-1845-24b
    Text: RF input 50Ω L1, L2: Ferroxcube VK200 19/4B ferrite choke 56pF T1 9:1 100Ω 1/4W 10nF 5600pF 470pF 5600pF 10nF 1KΩ POT L3, L4: 6 ferrite beads each Ferroxcube 56 590 65/3B Gen Pur Diode T1: Ferrite core Stackpole 57-1845-24B T2: 7 turns of twisted pair AWG #20, Ferrite core Stackpole 57-9322


    Original     		PDF VK200 19/4B 5600pF 470pF 65/3B 57-1845-24B SM341 TB172 FERROXCUBE VK200 vk200 VK200 ferrite choke stackpole 57-1845-24b vk200 rf choke Stackpole 57-9074 Stackpole ferrite Toroid 57-9322 57-1845-24b

    VK200 rfc

    Abstract: vk200 vk200* FERROXCUBE vk200 rfc with 6 turns NTE320 T72 5VDC NTE320F vk200-20
    Text: NTE320/NTE320F Silicon NPN RF Power Transistor 40W @ 175MHz Description: The NTE320 and NTE320F are silicon NPN power transistors designed for 12.5V VHF large–signal amplifier applications required in commercial and industrial equipment operating to 300MHz.


    Original     		PDF NTE320/NTE320F 175MHz NTE320 NTE320F 300MHz. 175MHz NTE320 NTE320F 1000pF 100pF VK200 rfc vk200 vk200* FERROXCUBE vk200 rfc with 6 turns T72 5VDC vk200-20

    vk200

    Abstract: VK200-19/4B M122 SD1433
    Text: SD1433 RF & MICROWAVE TRANSISTORS UHF MOBILE APPLICATIONS . . . 470 MHz 12.5 VOLTS CLASS C EFFICIENCY 60% COMMON EMITTER POUT = 10 W MIN. WITH 8.0 dB GAIN .280 4L STUD M122 epoxy sealed ORDER CODE SD1433 BRANDING SD1433 PIN CONNECTION DESCRIPTION The SD1433 is a Class C epitaxial silicon NPN


    Original     		PDF SD1433 SD1433 vk200 VK200-19/4B M122

    SD1407

    Abstract: VK-200 arco 463
    Text: SD1407 RF & MICROWAVE TRANSISTORS HF SSB APPLICATIONS . . . 30 MHz 28 VOLTS IMD −30 dB COMMON EMITTER GOLD METALLIZATION POUT = 125 W MIN. WITH 15 dB GAIN .500 4LFL M174 epoxy sealed ORDER CODE SD1407 BRANDING 1407 PIN CONNECTION DESCRIPTION The SD1407 is a 28 V epitaxial silicon NPN planar


    Original     		PDF SD1407 SD1407 VK-200 arco 463

    MRF166 211-07

    Abstract: motorola J122 MOTOROLA J210 SD1902 BLF244 and equivalent F 2452 mosfet zener motorola 1N5925A J651 DV2820
    Text: MOTOROLA Order this document by MRF166/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field Effect Transistors MRF166 MRF166C N–Channel Enhancement Mode MOSFETs Designed primarily for wideband large–signal output and driver from 30 – 500


    Original     		PDF MRF166/D MRF166 MRF166C MRF166C MRF166) MRF136, DV2820, BLF244, SD1902, ST1001 MRF166 211-07 motorola J122 MOTOROLA J210 SD1902 BLF244 and equivalent F 2452 mosfet zener motorola 1N5925A J651 DV2820

    VK200-19/4B

    Abstract: choke vk200 vk200 3M-K-6098 M122 SD1433
    Text: SD1433 RF & MICROWAVE TRANSISTORS UHF MOBILE APPLICATIONS . . . 470 MHz 12.5 VOLTS CLASS C EFFICIENCY 60% COMMON EMITTER P OUT = 10 W MIN. WITH 8.0 dB GAIN .280 4L STUD M122 epoxy sealed ORDER CODE SD1433 BRANDING SD1433 PIN CONNECTION DESCRIPTION The SD1433 is a Class C epitaxial silicon NPN


    Original     		PDF SD1433 SD1433 VK200-19/4B choke vk200 vk200 3M-K-6098 M122

    VK200 rfc

    Abstract: vk200 rfc with 6 turns SD1460 vk200 choke vk200 SD1143
    Text: SD1460 RF & MICROWAVE TRANSISTORS FM BROADCAST APPLICATIONS . . . 108 MHz 28 VOLTS EFFICIENCY 75% COMMON EMITTER GOLD METALLIZATION POUT = 150 W MIN. WITH 9.2 dB GAIN .500 4LFL M174 epoxy sealed ORDER CODE SD1460 BRANDING SD1460 PIN CONNECTION DESCRIPTION


    Original     		PDF SD1460 SD1143 VK200 rfc vk200 rfc with 6 turns SD1460 vk200 choke vk200

    vk200 rfc with 6 turns

    Abstract: VK200 rfc choke vk200 SD1460 vk200 vk200 choke vk200 rf choke VK200-19/4B vk200 chokes SD1143
    Text: SD1460 RF & MICROWAVE TRANSISTORS FM BROADCAST APPLICATIONS . . . 108 MHz 28 VOLTS EFFICIENCY 75% COMMON EMITTER GOLD METALLIZATION P OUT = 150 W MIN. WITH 9.2 dB GAIN .500 4LFL M174 epoxy sealed ORDER CODE SD1460 BRANDING SD1460 PIN CONNECTION DESCRIPTION


    Original     		PDF SD1460 SD1143 vk200 rfc with 6 turns VK200 rfc choke vk200 SD1460 vk200 vk200 choke vk200 rf choke VK200-19/4B vk200 chokes

    905-170

    Abstract: MRF3010 VK200 VK20019-4B
    Text: MOTOROLA Order this document by MRF3010/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line MRF3010 RF Power Field Effect Transistor N–Channel Enhancement–Mode Lateral MOSFET 10 W, 1.6 GHz, 28 V LATERAL N–CHANNEL BROADBAND RF POWER MOSFET Designed for IMARSAT satellite up link at 1.6 to 1.64 GHz, 28 volts, Class AB,


    Original     		PDF MRF3010/D MRF3010 905-170 MRF3010 VK200 VK20019-4B

    SD1407

    Abstract: VK-200 vk200 vk 200
    Text: SD1407 RF & MICROWAVE TRANSISTORS HF SSB APPLICATIONS . . . 30 MHz 28 VOLTS IMD −30 dB COMMON EMITTER GOLD METALLIZATION P OUT = 125 W MIN. WITH 15 dB GAIN .500 4LFL M174 epoxy sealed ORDER CODE SD1407 BRANDING 1407 PIN CONNECTION DESCRIPTION The SD1407 is a 28 V epitaxial silicon NPN planar


    Original     		PDF SD1407 SD1407 VK-200 vk200 vk 200

    SD1477

    Abstract: arco arco 462 vk200 M111
    Text: SD1477 RF & MICROWAVE TRANSISTORS VHF MOBILE APPLICATIONS . . 175 MHz 12.5 VOLTS COMMON EMITTER P OUT = 100 W MIN. WITH 6.0 dB GAIN .500 6LFL M111 epoxy sealed ORDER CODE SD1477 BRANDING SD1477 PIN CONNECTION DESCRIPTION The SD1477 is a 12.5 V Class C epitaxial silicon


    Original     		PDF SD1477 SD1477 arco arco 462 vk200 M111

    SD1477

    Abstract: vk200 M111
    Text: SD1477 RF & MICROWAVE TRANSISTORS VHF MOBILE APPLICATIONS . . 175 MHz 12.5 VOLTS COMMON EMITTER POUT = 100 W MIN. WITH 6.0 dB GAIN .500 6LFL M111 epoxy sealed ORDER CODE SD1477 BRANDING SD1477 PIN CONNECTION DESCRIPTION The SD1477 is a 12.5 V Class C epitaxial silicon


    Original     		PDF SD1477 SD1477 vk200 M111

    JMC5501

    Abstract: SD1480 vk200 M111
    Text: SD1480 RF & MICROWAVE TRANSISTORS VHF APPLICATIONS . . . . 136 - 175 MHz 28 VOLTS EFFICIENCY 55% COMMON EMITTER GOLD METALLIZATION INTERNAL INPUT MATCHING POUT = 125 W MIN. WITH 9.2 dB GAIN .500 6LFL M111 epoxy sealed ORDER CODE SD1480 BRANDING SD1480


    Original     		PDF SD1480 SD1480 JMC5501 vk200 M111

    DL110

    Abstract: VK200 20/4B inductor VK200 inductor of high frequencies AN211A MRF275L VK200 sony+IMX+179
    Text: Order this document by MRF275L/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line MRF275L RF Power Field-Effect Transistor N–Channel Enhancement–Mode 100 W, 28 V, 500 MHz N–CHANNEL BROADBAND RF POWER FET Designed for broadband commercial and military applications using single


    Original     		PDF MRF275L/D MRF275L DL110 VK200 20/4B inductor VK200 inductor of high frequencies AN211A MRF275L VK200 sony+IMX+179

    sd1480

    Abstract: JMC5501 arco 402 datasheet vk200 M111 600lW
    Text: SD1480 RF & MICROWAVE TRANSISTORS VHF APPLICATIONS . . . . 136 - 175 MHz 28 VOLTS EFFICIENCY 55% COMMON EMITTER GOLD METALLIZATION INTERNAL INPUT MATCHING P OUT = 125 W MIN. WITH 9.2 dB GAIN .500 6LFL M111 epoxy sealed ORDER CODE SD1480 BRANDING SD1480


    Original     		PDF SD1480 SD1480 JMC5501 arco 402 datasheet vk200 M111 600lW

    mrf455

    Abstract: Motorola transistors MRF455 TRANSISTOR mrf455 MRF455 APPLICATION NOTES equivalent transistor rf "30 mhz" beads ferroxcube ferroxcube ferrite beads MRF455 motorola vk200 VK200 FERRITE
    Text: MOTOROLA Order this document by MRF455/D SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon RF Power Transistor MRF455 . . . designed for power amplifier applications in industrial, commercial and amateur radio equipment to 30 MHz. • Specified 12.5 Volt, 30 MHz Characteristics —


    Original     		PDF MRF455/D MRF455 mrf455 Motorola transistors MRF455 TRANSISTOR mrf455 MRF455 APPLICATION NOTES equivalent transistor rf "30 mhz" beads ferroxcube ferroxcube ferrite beads MRF455 motorola vk200 VK200 FERRITE

    VK200 19 4B INDUCTOR

    Abstract: arco 462 capacitor capacitor 680 s12 diode VK200 4B inductor
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line MRF275L RF Power Field-Effect Transistor N–Channel Enhancement–Mode 100 W, 28 V, 500 MHz N–CHANNEL BROADBAND RF POWER FET Designed for broadband commercial and military applications using single


    Original     		PDF MRF275L VK200 19 4B INDUCTOR arco 462 capacitor capacitor 680 s12 diode VK200 4B inductor

    2N4933

    Abstract: RCA-2N4933 2N4932 VK200 INDUCTOR choke vk200 inductor vk200 transistor 200A 24V RCA transistors rca 249 VK200 FERRITE
    Text: File No. 249 RF P o w e r T ra n s is to r s 2N4932 2N4933 Solid State Division RCA-2N4932* and RCA-2N4933* are epitaxial silicon n-p-n planar transistors of the “ overlay” emitter elec­ trode construction. They are especially intended to pro­ vide high power as class C rf amplifiers for International


    OCR Scan     		PDF 2N4932 2N4933 RCA-2N4932* RCA-2N49331 88MHz) 2N4932 2N4933, 24-volt ST-3250. ST-3230. 2N4933 RCA-2N4933 VK200 INDUCTOR choke vk200 inductor vk200 transistor 200A 24V RCA transistors rca 249 VK200 FERRITE

    ferroxcube for ferrite beads 56-590-65

    Abstract: VK200 ferrite inductor vk200 VK200 rfc 2N5944 VK200 ferroxcube for ferrite beads THOMSON-CSF electrolytic VK200 INDUCTOR 565-9065
    Text: S G S-THOMSON O M C D I 712=1237 Q Q Q O D I l 3 | . SOLID STATE MICROWAVE 2N5944 ; THOMSON-CSF COMPONENTS CORPORATION _ [ Montgomery ville, PA 1 8 9 36 « 215 362:8500 * TWX 510-661-7299 _j UHF COMMUNICATIONS TRANSISTOR DESCRIPTION SSM device type 2N5944 is a 12.5 volt epitaxial silicon NPN planar


    OCR Scan     		PDF N5944 PA18936Â 2N5944 56-590-65/3B VK200/10-3B ferroxcube for ferrite beads 56-590-65 VK200 ferrite inductor vk200 VK200 rfc VK200 ferroxcube for ferrite beads THOMSON-CSF electrolytic VK200 INDUCTOR 565-9065

    MX20-2

    Abstract: uhf motorola
    Text: MOTOROLA SEM IC O N D U C T O R TECHNICAL DATA MX20-1 MX20-2 The RF Line U H F P o w e r A m p lifie rs . designed for wide power range control as encountered in UHF cellular radio applications. 20 W ATTS 400-470 MHz RF POW ER AMPLIFIERS • MX20-1 400-440 MHz


    OCR Scan     		PDF MX20-1 MX20-2 MX20-1 MX20-2 MX20-1, VK200 uhf motorola

    MRFC572

    Abstract: MRF572 MRF671 vk200* FERROXCUBE MRF571
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MRF571 MRF572 MRFC572 The RF Line NPN SILICON HIGH FREQUENCY TRANSISTORS . . . designed for low-noise, w ide dynamic range front end am­ plifiers, low noise VCO's, and microwave power multipliers. • Low Noise • High Gain


    OCR Scan     		PDF MRF571 MRF572 MRFC572 MRF671 MRF572 MRFS72 MRF571, MRF572, MRFC572 MRF671 vk200* FERROXCUBE

    Untitled

    Abstract: No abstract text available
    Text: SCS-THOMSON * 7 / SD1477 D ü flK ê œ iL iiig T n s iiD Ê i RF & MICROWAVE TRANSISTORS VHF MOBILE APPLICATIONS . 175 MHz » 12.5 VOLTS • COMMON EMITTER ■ P out = 100 W MIN. WITH 6.0 dB GAIN DESCRIPTION The SD1477 is a 12.5 V Class C epitaxial silicon


    OCR Scan     		PDF SD1477 SD1477 -K6098,

    sd1477 80

    Abstract: FT1604
    Text: 7 ^ 7 #. f Z • . ■ . S G S - T H O M S O N SD1477 K M ««® «! RF & MICROWAVE TRANSISTORS VHF MOBILE APPLICATIONS 1 75 MHz 12.5 VOLTS COMMON EMITTER P out = 100 W MIN. WITH 6.0 dB GAIN PIN CONNECTION 4 1 DESCRIPTION The SD1477 is a 12.5 V Class C epitaxial silicon


    OCR Scan     		PDF SD1477 SD1477 sd1477 80 FT1604

    j130 fet

    Abstract: MRF27SG
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line Pow er F ield -E ffect Transistor MRF275G N-Channel Enhancement-Mode Designed primarily for wideband large-signal output and driver stages from 100 - 500 MHz. 150 W, 28 V, 500 MHz N-CHANNEL MOS BROADBAND


    OCR Scan     		PDF MRF275G MRF275G j130 fet MRF27SG