JMC5501
Abstract: SD1480 M111 VK200
Text: SD1480 RF POWER BIPOLAR TRANSISTORS VHF APPLICATIONS FEATURES SUMMARY • 136 - 175 MHz Figure 1. Package ■ 28 VOLTS ■ EFFICIENCY 55% ■ COMMON EMITTER ■ GOLD METALLIZATION ■ INTERNAL INPUT MATCHING ■ POUT = 125 W MIN. WITH 9.2 dB GAIN DESCRIPTION
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SD1480
SD1480
JMC5501
M111
VK200
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vk200 ferrite bead
Abstract: MRF650 JMC5501 2052161802 RCA 1648 JMC501 TL11 TL12 VK200 c3b5
Text: MOTOROLA Order this document by MRF650/D SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon RF Power Transistor MRF650 Designed for 12.5 Volt UHF large–signal amplifier applications in industrial and commercial FM equipment operating to 520 MHz. • Guaranteed 440, 470, 512 MHz 12.5 Volt Characteristics
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MRF650/D
MRF650
vk200 ferrite bead
MRF650
JMC5501
2052161802
RCA 1648
JMC501
TL11
TL12
VK200
c3b5
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sd1480
Abstract: JMC5501 arco 402 datasheet vk200 M111 600lW
Text: SD1480 RF & MICROWAVE TRANSISTORS VHF APPLICATIONS . . . . 136 - 175 MHz 28 VOLTS EFFICIENCY 55% COMMON EMITTER GOLD METALLIZATION INTERNAL INPUT MATCHING P OUT = 125 W MIN. WITH 9.2 dB GAIN .500 6LFL M111 epoxy sealed ORDER CODE SD1480 BRANDING SD1480
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SD1480
SD1480
JMC5501
arco 402 datasheet
vk200
M111
600lW
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SD1480
Abstract: JMC5501 STMicroelectronics 402
Text: SD1480 RF POWER BIPOLAR TRANSISTORS VHF APPLICATIONS FEATURES SUMMARY • 136 - 175 MHz Figure 1. Package ■ 28 VOLTS ■ EFFICIENCY 55% ■ COMMON EMITTER ■ GOLD METALLIZATION ■ INTERNAL INPUT MATCHING ■ POUT = 125 W MIN. WITH 9.2 dB GAIN DESCRIPTION
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SD1480
SD1480
JMC5501
STMicroelectronics 402
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JMC5501
Abstract: SD1480 vk200 M111
Text: SD1480 RF & MICROWAVE TRANSISTORS VHF APPLICATIONS . . . . 136 - 175 MHz 28 VOLTS EFFICIENCY 55% COMMON EMITTER GOLD METALLIZATION INTERNAL INPUT MATCHING POUT = 125 W MIN. WITH 9.2 dB GAIN .500 6LFL M111 epoxy sealed ORDER CODE SD1480 BRANDING SD1480
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SD1480
SD1480
JMC5501
vk200
M111
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TL12
Abstract: 2052-1618 mrf650
Text: MOTOROLA Order this document by MRF650/D SEMICONDUCTOR TECHNICAL DATA NPN Silicon RF Power Transistor LAST SHIP 15MAR02 The RF Line MRF650 Designed for 12.5 Volt UHF large–signal amplifier applications in industrial and commercial FM equipment operating to 520 MHz.
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MRF650/D
MRF650
MRF650
TL12
2052-1618
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Motorola transistors MRF 947
Abstract: trimpots 3296 transistor C5386 1n4740 2N5591 Motorola 2N5688 CQ 542 Transistor npn motorola equivalent transistor of 2sc3358 HB215/D ic cd 2399 gp
Text: Selector Guide 1 Discrete Transistor Data Sheets Amplifier Data Sheets Monolithic Integrated Circuit H Data Sheets mm Case Dimensions Cross Reference and Sales Offices 6 M MOTOROLA RF Device Data This publication presents technical information for the several product families that
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2PHX11136Q-17
Motorola transistors MRF 947
trimpots 3296
transistor C5386
1n4740
2N5591 Motorola
2N5688
CQ 542 Transistor npn motorola
equivalent transistor of 2sc3358
HB215/D
ic cd 2399 gp
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vk200 ferrite bead
Abstract: 470-512MHz MRF650 mount chip transistor 13W uhf 13W amplifier motorola rca
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line N PN Silico n RF Pow er T ran sistor Designed for 12.5 Volt UHF large-signal amplifier applications in industrial and commercial FM equipment operating to 520 MHz. • Guaranteed 440,470, 512 MHz 12.5 Volt Characteristics
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MRF650
vk200 ferrite bead
470-512MHz
mount chip transistor 13W
uhf 13W amplifier
motorola rca
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GX-0600-55-22
Abstract: mrf650 vk200 ferrite bead JMC5501
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MRF650 The RF Line NPN Silicon RF Power TVansistor . . . d e sig n e d fo r 12.5 V olt U H F la rg e -sig n a l a m p lifie r a pp licatio n s in industrial a nd c o m m e rcia l FM e q u ip m e n t o pe ra tin g to 5 2 0 M Hz.
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MRF650
MRF650
GX-0600-55-22
vk200 ferrite bead
JMC5501
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chw marking sot23
Abstract: sps 1951 transistor trimmer electron 3296 bw 9028 transistor smd marking BA rn ph 4148 zener diode
Text: Contents at a Glance VOLUME I Device Index Alphanumeric . . viii Chapter One Selector G u id e . 1.1-1 Chapter Two RF Monolithic Integrated C ircu
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vk200 ferrite bead
Abstract: mrf650 3HS0006-91 irl 52 50TC14 JMC501
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon RF Pow er Transistor Designed for 12.5 Volt UHF large-signal amplifier applications in industrial and commercial FM equipment operating to 520 MHz. • • Guaranteed 440, 470, 512 MHz 12.5 Volt Characteristics
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MRF650
vk200 ferrite bead
3HS0006-91
irl 52
50TC14
JMC501
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Untitled
Abstract: No abstract text available
Text: / T T SGS-THOMSON ^ 7 # S D 1480 RF & MICROWAVE TRANSISTORS _ VHF APPLICATIONS • . ■ . ■ . 136 - 175 MHz 28 VOLTS EFFICIENCY 55% COMMON EMITTER GOLD METALLIZATION INTERNAL INPUT MATCHING ■ P o u t = 125 W MIN. WITH 9.2 dB GAIN
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SD1480
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Untitled
Abstract: No abstract text available
Text: r z T SG S -THO M SO N EilD glS i[Ll(gT[S©ffl©i SD1480 RF & MICROWAVE TRANSISTORS VHF APPLICATIONS i . . . • . ■ 136 - 175 MHz 28 VOLTS EFFICIENCY 55% COMMON EMITTER GOLD METALLIZATION INTERNAL INPUT MATCHING P o ut = 125 W MIN. WITH 9.2 dB GAIN PIN CONNECTION
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SD1480
SD1480
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MSC1002
Abstract: AVIA c cube IC CD 4440 amplifier circuit diagram
Text: TABLE OF CONTENTS INTRODUCTION ALPHANUMERICAL INDEX Page 4 7 PRODUCTS GUIDE 11 -SYM BO LS -SELECTION GUIDE -C R O S S REFERENCE 13 14 37 DATASHEETS 45 INTRODUCTION SGS-THOMSON MICROELECTRONICS, RF PRODUCTS GROUP RF & MICROWAVE COMPONENTS DATABOOK, 2nd Edition
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28Vdc
MSC1002
AVIA c cube
IC CD 4440 amplifier circuit diagram
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