rs 7410
Abstract: vcsel array
Text: 48400 Fremont Blvd. Fremont, CA 94538 Tel: 510 445-3068 x244 Fax: (510) 445-3060 Low Threshold 10 Gbps 1x4 Array 850 nm VCSEL Part Number: VG2B-7410 Applications: 10 Gbps aggregate speed Absolute Maximum Ratings (T = 25°C): Parameter Symbol Unit Min. Max.
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VG2B-7410
rs 7410
vcsel array
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3068
Abstract: VG2B-7810 ARRAY VCSEL
Text: 48400 Fremont Blvd. Fremont, CA 94538 Tel: 510 445-3068 x244 Fax: (510) 445-3060 Low Threshold 30 Gbps 850 nm 1x12 Array VCSEL Part Number: VG2B-7810 Applications: 30 Gbps aggregate speed Absolute Maximum Ratings (T = 25°C): Parameter Symbol Unit Min. Max.
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VG2B-7810
3068
VG2B-7810
ARRAY VCSEL
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VCSEL die bonding
Abstract: VG2B-7010
Text: 48400 Fremont Blvd. Fremont, CA 94538 Tel: 510 445-3068 x244 Fax: (510) 445-3060 Low Threshold 2.5 Gbps 850 nm VCSEL Part Number: VG2B-7010 Applications: 2.125 / 2.5 Absolute Maximum Ratings (T = 25°C): Parameter Symbol Unit Forward Imax mA Current Reverse Voltage
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VG2B-7010
VCSEL die bonding
VG2B-7010
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VG2B-7000
Abstract: No abstract text available
Text: th 50, Lung-Yuan 7 Road, Lung-Tan Tao-Yuan Hsien, TAIWAN Tel: 03 409-1335 x230/235 Fax: (03) 409-1339 48400 Fremont Blvd. Fremont, CA 94538 USA Tel: (510) 445-3068 x244 Fax: (510) 445-3060 Low Threshold 2.5 Gbps 850 nm VCSEL Data Sheet Part Number: VG2B-7000
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x230/235
VG2B-7000
VG2B-7000
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XP1073-BD
Abstract: xp1073 DM6030HK XP107
Text: 34.0-37.0 GHz GaAs MMIC Power Amplifier P1073-BD February 2010 - Rev 16-Feb-10 Features Ka-Band 6W Power Amplifier 22.0 dB Small Signal Gain +37.0 dBm Pulsed Saturated Output Power 24% Power Added Efficiency PAE % 100% On-Wafer RF, DC and Output Power Testing
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P1073-BD
16-Feb-10
MIL-STD-883
XP1073-BD
XP1073-BD
xp1073
DM6030HK
XP107
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30SPA0553
Abstract: 30SPA0557 84-1LMI
Text: 27.0-32.0 GHz GaAs MMIC Power Amplifier 30SPA0553 September 2005 - Rev 01-Sep-05 Features Chip Device Layout tio n Ka-Band 2W Power Amplifier 22.0 dB Small Signal Gain +33.0 dBm Saturated Output Power +40.0 dBm Output Third Order Intercept OIP3 100% On-Wafer RF, DC and Output Power Testing
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30SPA0553
01-Sep-05
MIL-STD-883
30SPA0553
30SPA0557
84-1LMI
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discon
Abstract: No abstract text available
Text: Designated client product This product will be discontinued its production in the near term. And it is provided for customers currently in use only, with a time limit. It can not be available for your new project. Please select other new or existing products.
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NJW1301
NJW1301
in-60
in-58
discon
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P1015-BD
Abstract: No abstract text available
Text: 43.5-46.5 GHz GaAs MMIC Power Amplifier P1015-BD August 2007 - Rev 10-Aug-07 Features Excellent Saturated Output Stage Balanced Design Provides Good Input/Output Match 13.0 dB Small Signal Gain +31.0 dBm P1dB Compression Point 100% On-Wafer RF, DC and Output Power Testing
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10-Aug-07
P1015-BD
MIL-STD-883
XP1015-BD-000V
XP1015-BD-EV1
XP1015
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XP1006-BD
Abstract: XP1006 X-band GaAs pHEMT MMIC Chip GAAS FET AMPLIFIER x-band 10w Chip Advanced Tech
Text: XP1006-BD 8.5-11.0 GHz GaAs MMIC Power Amplifier Rev 01-Sep-10 Features Chip Device Layout • X-Band 10W Power Amplifier • 21.0 dB Large Signal Gain • +40.0 dBm Saturated Output Power • 30% Power Added Efficiency • On-chip Gate Bias Circuit • 100% On-Wafer RF, DC and Output Power Testing
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XP1006-BD
MIL-STD-883
01-Sep-10
XP1006
XP1006-BD
X-band GaAs pHEMT MMIC Chip
GAAS FET AMPLIFIER x-band 10w
Chip Advanced Tech
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P1006BD
Abstract: P1006-BD XP1006-BD GAAS FET AMPLIFIER x-band 10w Mimix Asia
Text: 8.5-11.0 GHz GaAs MMIC Power Amplifier November 2008 - Rev 11-Nov-08 P1006-BD Features X-Band 10W Power Amplifier 21.0 dB Large Signal Gain +40.0 dBm Saturated Output Power 30% Power Added Efficiency On-chip Gate Bias Circuit 100% On-Wafer RF, DC and Output Power Testing
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11-Nov-08
P1006-BD
MIL-STD-883
XP1006
XP1006-BD-000V
XP1006-BD-EV1
P1006BD
XP1006-BD
GAAS FET AMPLIFIER x-band 10w
Mimix Asia
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44MPA0478
Abstract: DM6030HK TS3332LD XP1028-BD XP1028-BD-000V XP1028-BD-EV1 P1028-BD
Text: 43.5-46.5 GHz GaAs MMIC Power Amplifier P1028-BD April 2007 - Rev 17-Apr-07 Features Excellent Saturated Output Stage Balanced Design Provides Good Input/Output Match 14.0 dB Small Signal Gain +29 dBm P1dB Compression Point 100% On-Wafer RF, DC and Output Power Testing
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P1028-BD
17-Apr-07
MIL-STD-883
XP1028-BD-000V
XP1028-BD-EV1
XP1028
44MPA0478
DM6030HK
TS3332LD
XP1028-BD
XP1028-BD-000V
XP1028-BD-EV1
P1028-BD
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inductance R600
Abstract: No abstract text available
Text: 21.2-23.6 GHz GaAs MMIC Transmitter March 2005 - Rev 01-Mar-05 Features Chip Device Layout tio n Sub-harmonic Transmitter Integrated IR Mixer, LO Buffer & Output Amplifier +20.0 dBm Output Third Order Intercept OIP3 2.0 dBm LO Drive Level 15.0 dB Image Rejection
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01-Mar-05
MIL-STD-883
inductance R600
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Untitled
Abstract: No abstract text available
Text: 13.5-16.0 GHz GaAs MMIC Power Amplifier P1057-BD January 2009 - Rev 29-Jan-09 Features 10W Power Amplifier Dual Sided Bias Architecture 17 dB Small Signal Gain +39.0 dBm P1dB Compression Point +41.0 dBm Pulsed Saturated Output Power +48.0 dBm Output Third Order Intercept
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29-Jan-09
P1057-BD
MIL-STD-883
anD-000V
XP1057-BD-EV1
XP1057-BD
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tanaka gold wire
Abstract: MMIC X-band amplifier P1006 DM6030HK TS3332LD XP1006 XP1006 bonding X-band GaAs pHEMT MMIC Chip
Text: 8.5-11.0 GHz GaAs MMIC Power Amplifier March 2006 - Rev 13-Mar-06 P1006 Features X-Band 10W Power Amplifier 21.0 dB Large Signal Gain +40.0 dBm Saturated Output Power 30% Power Added Efficiency On-chip Gate Bias Circuit 100% On-Wafer RF, DC and Output Power Testing
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13-Mar-06
P1006
MIL-STD-883
XP1006
tanaka gold wire
MMIC X-band amplifier
P1006
DM6030HK
TS3332LD
XP1006
XP1006 bonding
X-band GaAs pHEMT MMIC Chip
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P1016
Abstract: DM6030HK XP1016 XP1016-BD XP1016-BD-000V XP1016-BD-EV1 AuSn eutectic
Text: 43.5-46.5 GHz GaAs MMIC Power Amplifier P1016-BD February 2010 - Rev 15-Feb-10 Features Excellent Driver Stage 14.0 dB Small Signal Gain +24.0 dBm P1dB Compression Point 100% On-Wafer RF, DC and Output Power Testing 100% Visual Inspection to MIL-STD-883 Method 2010
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P1016-BD
15-Feb-10
MIL-STD-883
XP1016-BD
XP1016-BD-EV1
XP1016
P1016
DM6030HK
XP1016-BD
XP1016-BD-000V
XP1016-BD-EV1
AuSn eutectic
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Untitled
Abstract: No abstract text available
Text: Agilent 1GG6-4080 0.155 – 43 Gb/s Differential I/O, High Power, Output Amplifier Data Sheet Features • Frequency range: 50 GHz single–ended , 30 GHz (diff.) • Single–ended or fully differential I/O operation • Low additive jitter: 600 fs, (43 Gb/s 231 – 1 PRBS, RMS typ.)
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1GG6-4080
5991-1251EN
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SA051
Abstract: HEMT Amplifier
Text: TRYw K-Band Power HEMT Amplifier APH212C Features • RF frequency: 17 to 27 GHz • Linear gain: 16 dB, typical • PldB: 31 dBm, typical • Unconditionally stable • Balanced design provides excellent input and output VSWR • DC power: 4 Vdc at 1350 mA
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APH212C
APH212C
SA051
006/J-2
SA051
HEMT Amplifier
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2n2646 2n2647
Abstract: 2N2646 n2646
Text: TYPES 2N2646, 2N2647 P-N PIANAR SILICON UNIJUNCTION TRANSISTORS B U L L E T IN N O . D L -S 7 3 1 1 9 5 9 , M A R C H 1 9 7 3 PLANAR UNIJUNCTION TRANSISTORS SPECIFICALLY CHARACTERIZED FOR A WIDE RANGE OF M ILITA R Y AND INDUSTRIAL APPLICATIONS • Planar Process Ensures Low Leakage, Low Drive-Current
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2N2646,
2N2647
2n2646 2n2647
2N2646
n2646
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IC HXJ 2038
Abstract: 1N52398 DB5T tfk 102 cny 70 hxj 2038 rca 40361 transistor rca 40362 TFK 680 CNY 70 Diode Equivalent 1N34A 2n5952 equivalent
Text: The Engineering Staff of TEXAS INSTRUMENTS INCORPORATED Components Group The T ransistor and Diode Data Book for Design Engineers T e x a s In s t r u m e n t s IN CO RPO RATED TYPE NUMBER INDEX GLOSSARY TRANSISTOR SELECTION GUIDES TRANSISTOR INTERCHANGEABILITY
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ecl82
Abstract: ecl 82 2X42 triode push-pull circuit Mazda
Text: M AZDA BELVU TRIODE PENTODE C £ l OO O scillateur et amplificateur de balayage im ages vAmplificateur A .F . C A R A C T ER IST IQ U ES G E N E R A L E S Cathode à chauffage indirect Alim entation du filament en parallèle T ension filament . Vf
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A22-4
ecl82
ecl 82
2X42
triode push-pull circuit
Mazda
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Untitled
Abstract: No abstract text available
Text: AWT919D TX POWER MMIC E W iDIGIG* Advanced Product Information Your GaAs IC Source REV: 1 900/1900 MHz Dual Band DAMPS GaAs Power Amplifier IC DESCRIPTION: The AW T919D is a highly integrated GaAs monolithic Power Amplifier suited for both 824 - 849 MHz AMPS/DAMPS and
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AWT919D
T919D
kZ25H3
06/07/98-AWT919d
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Untitled
Abstract: No abstract text available
Text: E m m AWT919D TX POWER MMIC a c s ' Your GaAs IC Source A d va n ce d P ro d u ct ln fo r 1™ 900/1900 MHz Dual Band DAMPS GaAs Power Amplifier IC DESCRIPTION: V D IJ k YD2JL The AW T919D is a highly integrated GaAs monolithic Power Amplifier suited for both
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AWT919D
T919D
Q0000409CW4H40000MQ
04CHKCW
06/07/98-AWT919d
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UJT-2N2646 PIN DIAGRAM DETAILS
Abstract: speed control of dc motor using ujt scr c107m TRANSISTOR equivalent UJT pin diagram 2N2646 1000w inverter PURE SINE WAVE schematic diagram TY6008 triac ot 239 class d 1000w amplifier inverter welder 4 schematic thyristor zo 402
Text: Theory and Applications Chapters 1 thru 9 Selector Guide Data Sheets Outline Dimensions and Leadform Options Index and Cross Reference E (g ) M OTOROLA THYRISTOR DATA Prepared by Technical Information Center This second edition of the Thyristor Data Manual has been revised extensively to reflect
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Semi260
TY510
TY6004
TY6008
TY6010
TY8008
TY8010
2N6394
MCR218-8
UJT-2N2646 PIN DIAGRAM DETAILS
speed control of dc motor using ujt scr
c107m TRANSISTOR equivalent
UJT pin diagram 2N2646
1000w inverter PURE SINE WAVE schematic diagram
TY6008
triac ot 239
class d 1000w amplifier
inverter welder 4 schematic
thyristor zo 402
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UJT 2N4871
Abstract: transistor 2n4871 UJT 2N4870 2N4870 2N4871 ZN4871 2N4810 100S 2N487 ABB thyristor 5
Text: 2IM4870 2N4871 PIM U n iju n ctio n T ra n s is to rs S ilico n U n iju n ctio n T ra n sis to rs . . . . designed for pulse and timing circuits, sensing circuits, and thyristor trigger circuits. These devices feature: . • • • • • Low Peak Point Current — 1 nA Typical
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2IM4870
2N4871
O-226AAÃ
b3b7255
2IM4870
V82B1.
UJT 2N4871
transistor 2n4871
UJT 2N4870
2N4870
2N4871
ZN4871
2N4810
100S
2N487
ABB thyristor 5
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