max5986
Abstract: vwad MAX5987AETE T1655
Text: 19-6261; Rev 0; 4/12 EVALUATION KIT AVAILABLE MAX5986A/MAX5987A IEEE 802.3af-Compliant, High-Efficiency, Class 1, Powered Devices with Integrated DC-DC Converter General Description The MAX5986A/MAX5987A provide a complete powersupply solution as IEEE 802.3af-compliant Class 1
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MAX5986A/MAX5987A
MAX5987A
MAX5986A
max5986
vwad
MAX5987AETE
T1655
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C2162PX2
Abstract: transistor WT4 wt4 transistor Cambridge capacitor capacitors transistor WT5 52 WT2 pnp transistor transistor WT3 E16 CORE TRANSFORMER 6 pin DPSN sot23-6 CAMSEMI
Text: Basic C2160 Design Guide Primary Side Sensing Controller Rapidly Implement Application Circuits Up to 8 W Using CamSemi’s PSS Topology and Advanced Controller ICs C2161PX2 SOT23-6 C2162PX2 (SOT23-6) CamSemi’s PSS topology and advanced controller ICs deliver low cost solutions for flyback power supply
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C2160
C2161PX2
OT23-6)
C2162PX2
DG-3228-0908A
19-Aug-2009
C2162PX2
transistor WT4
wt4 transistor
Cambridge capacitor capacitors
transistor WT5 52
WT2 pnp transistor
transistor WT3
E16 CORE TRANSFORMER 6 pin
DPSN
sot23-6 CAMSEMI
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EN12
Abstract: QFN32 QFN-32 TPS51220 TPS51220RHBR TPS51220RHBT
Text: TPS51220 www.ti.com. SLVS785C – OCTOBER 2007 – REVISED JULY 2009 Fixed Frequency, 99% Duty Cycle Peak Current Mode Notebook System Power Controller
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TPS51220
SLVS785C
EN12
QFN32
QFN-32
TPS51220
TPS51220RHBR
TPS51220RHBT
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LDT565630T
Abstract: SON50P300X300X80-11WEED3M 9C06031A7872FKHFT 9C08052A1005FKHFT A8439 A8439EEJTR-T BAV23S GRM188R71C104KA01D T-16-024A
Text: A8439 Photoflash Capacitor Charger with IGBT Driver and Refresh Features and Benefits Description ▪ ▪ ▪ ▪ ▪ ▪ ▪ ▪ ▪ The A8439 is a highly integrated IC that charges photoflash capacitors for digital and film cameras. An integrated MOSFET
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A8439
A8439
LDT565630T
SON50P300X300X80-11WEED3M
9C06031A7872FKHFT
9C08052A1005FKHFT
A8439EEJTR-T
BAV23S
GRM188R71C104KA01D
T-16-024A
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FDK*MIPF2520D
Abstract: FUSE 160mA LTC312 VLF3010AT-4R7M
Text: Features Programmable Average Input Current Limit: ±5% Accuracy n Dual Step-Down Outputs: Up to 96% Efficiency n Low Noise Pulse-Skipping Operation at Light Loads n Input Voltage Range: 2.5V to 5.5V n Output Voltage Range: 0.6V to 5V n 2.25MHz Constant-Frequency Operation
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25MHz
10-Lead
LTC3619B
400mA/800mA
TSSOP-16E,
DFN-16
MS10E,
DFN-10
FDK*MIPF2520D
FUSE 160mA
LTC312
VLF3010AT-4R7M
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SPRU131
Abstract: TMS320 XDS510 XDS510PP XDS510WS SPRU103
Text: TMS320C54x C Source Debugger User’s Guide 1998 Digital Signal Processing Solutions Printed in U.S.A., April 1998 SDS SPRU099C TMS320C54x C Source Debugger 1998 User’s Guide TMS320C54x C Source Debugger User’s Guide Literature Number: SPRU099C April 1998
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TMS320C54x
SPRU099C
SPRU131
TMS320
XDS510
XDS510PP
XDS510WS
SPRU103
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SPRU099
Abstract: SPRU103 TMS320 mp 1009e SPRU099A
Text: TMS320C5xx C Source Debugger User’s Guide 1994 Microprocessor Development Systems Printed in U.S.A., June 1994, reprinted October 1997 SDS SPRU099A TMS320C5xx C Source Debugger 1994 User’s Guide TMS320C5xx C Source Debugger User’s Guide SPRU099 June 1994
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TMS320C5xx
SPRU099A
SPRU099
TMS320C5x
SPRU099
SPRU103
TMS320
mp 1009e
SPRU099A
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SPRU189
Abstract: SPRU190 XDS510
Text: TMS320C6x C Source Debugger User’s Guide 1998 Digital Signal Processing Solutions Printed in U.S.A., January 1998 SDS SPRU188D TMS320C6x C Source Debugger 1998 User’s Guide TMS320C6x C Source Debugger User’s Guide Literature Number: SPRU188D January 1998
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TMS320C6x
SPRU188D
SPRU189
SPRU190
XDS510
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Untitled
Abstract: No abstract text available
Text: 2SC5022 Silicon NPN Triple Diffused HITACHI Application High voltage amplifier Features • High breakdown voltage VfBR CEO= 1500 V Min Outline TO-220FM 1 B a se 2 C o lle c to r 3 Emitter 2SC5022 Absolute Maximum Ratings Ta = 25°C) Item Symbol Ratings Unit
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2SC5022
O-220FM
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Untitled
Abstract: No abstract text available
Text: TOSHIBA 2SC2641 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE Weight : 1.9g ELECTRICAL CHARACTERISTICS Te = 25°C CHARACTERISTIC Collector Cut-off Current SYMBOL ICBO TEST CONDITION VnB = 15V) IR = 0 Collector-Base Breakdown Voltage VfBRlCBO IC = 2mA, Ie = 0
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2SC2641
02/zF
961001EAA2'
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2n7077
Abstract: No abstract text available
Text: Tem ic 2N7077 Siliconix N-Channel Enhancement-Mode Transistor Product Summary VfBRJDSSÎV ri)S cn) (Ö) 400 0.30 : . !d(A) 15 TO-254AA Hermetic Package D p o Case Isolated Ô S D S G Top View N-Channel M OSFET Absolute Maximum Ratings (Tc = 25 °C Unless Otherwise Noted)
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2n7077
2n7077_
P-36736â
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Untitled
Abstract: No abstract text available
Text: 2SC4913 Silicon NPN Triple Diffused HITACHI Application High voltage amplifier Features • High breakdown voltage • VfBR CEO= 2000 V min Outline TO-22QAB 1j 2 Collector ^22 Emitter ^ 2SC4913 Absolute Maximum Ratings Ta = 25°C) Item Symbol Ratings Unit
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2SC4913
O-22QAB
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27 Mhz power amplifier
Abstract: No abstract text available
Text: TOSHIBA {DIS CR ETE/ OP TO} 909725 0 T OS HIB A Sb DE I TOITSSO □00745b =1 DISCRETE/OPTO -6 7 SILICON NPN E PIT A X IA L PLANAR TYPE Unit in mm 27 MHz POWER AMPLIFIER APPLICATIONS. 10.S MAX., 0 3 . 6 ÍQ . 3 FEATURES: • Reconnnended for Output Stage Application of
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00745b
150EL
27 Mhz power amplifier
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smd transistor marking A3
Abstract: A3 smd sot-143 telefunken ha 880 P 817 telefunken ha 750 m smd transistor 278 AC
Text: Temic S595T/S595TR S e m i c o n d u c t o r s MOSMIC for TV-Tüner Prestage with 5 V Supply Voltage M O SM IC - M O S Monolithic Integrated Circuit Electrostatic sensitive device. Observe precautions for handling. £ Applications Low noise gain controlled input stages in UHF- and VHFtuner with 5 V supply voltage.
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S595T/S595TR
S595T
S959TR
26-Mar-97
S59STR
smd transistor marking A3
A3 smd sot-143
telefunken ha 880
P 817
telefunken ha 750 m
smd transistor 278 AC
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IC HXJ 2038
Abstract: 1N52398 DB5T tfk 102 cny 70 hxj 2038 rca 40361 transistor rca 40362 TFK 680 CNY 70 Diode Equivalent 1N34A 2n5952 equivalent
Text: The Engineering Staff of TEXAS INSTRUMENTS INCORPORATED Components Group The T ransistor and Diode Data Book for Design Engineers T e x a s In s t r u m e n t s IN CO RPO RATED TYPE NUMBER INDEX GLOSSARY TRANSISTOR SELECTION GUIDES TRANSISTOR INTERCHANGEABILITY
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transistor Electronic ballast 13005
Abstract: TD13005 transistor E 13005 SMD 13005 transistor transistor d 13005 13005 ballast 13005 TO-252 transistor 13005 CIRCUIT BR 13005 transistor 13005
Text: T e m ic TD13004 • TD13005 TELEFUNKEN Semiconductors Silicon NPN High Voltage Switching Transistor Features • HIGH SPEED technology • Very low dynamic saturation • Glass passivation • Very low operating temperature • Very short switching times
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TD13004
TD13005
TD13005
TD13004
TD13005Fast
transistor Electronic ballast 13005
transistor E 13005
SMD 13005 transistor
transistor d 13005
13005 ballast
13005 TO-252
transistor 13005 CIRCUIT
BR 13005
transistor 13005
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2SC4452
Abstract: QVC5 Q60H
Text: SANYO SEMICONDUCTOR CORP S2E D 7=^707!= G Q 0 7 1 D 1 Q T-3S -0 ? 2SC4452 • N P N Epitaxial Planar Silicon Transistor 20S9 High-Speed Switching Applications 2811 F e a tu re s • F ast switching speed • Low collector saturation voltage • High gain-bandwidth product
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G007101
2SC4452
-T-35-07
2SC4452-applied
QVC5
Q60H
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2SC2200
Abstract: AC74 400V INDUSTRIAL voltage regulator
Text: TOSHIBA -CDISCRETE/OPTOJ- 9097250 TOSHIBA ~5b DE | T 0e]72S 0 0007502 1 | 5t>C <DI SCR ET E/O P T O 07 50 2 D 7 ~ J ? 3 -// 2SC2200 S IL IC O N NPN T R IP L E D IF F U SE D TYPE_ INDUSTRIAL APPLICATIONS Unit in mm SWITCHING REGULATOR AND HIGH VOLTAGE
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2SC2200
-65VL50
AC74
400V INDUSTRIAL voltage regulator
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BUK542
Abstract: BUK542-100A BUK542-100B
Text: PHILIPS INTERNATIONAL bSE ]> • 711QSSb ODbmfll Tbfl ■ PHIN Philips Semiconductors Product Specification PowerMOS transistor BUK542-100A/B Logic level GENERAL DESCRIPTION PINNING -SO T186 PIN SYMBOL
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711QSSb
BUK542-100A/B
-SOT186
BUK542
-100A
-100B
BUK542-100A
BUK542-100B
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NPN RF Amplifier
Abstract: y-parameter MMBTH20 MPSH20 U407
Text: MPSH201MMBTH20 Discrete POW ER & Signal Technologies National S e m i c o n d u c t o r “ MMBTH20 MPSH20 NPN RF Transistor T h is d e v ic e is d e s ig n e d for g e n e ra l R F am plifier a n d m ixer ap p lica tio n s to 25 0 M H z w ith co lle cto r curren ts in the 1.0 m A
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LSG113Ã
b501130
NPN RF Amplifier
y-parameter
MMBTH20
MPSH20
U407
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Tf 227
Abstract: MMBT2369A MMPQ2369 PN2369A SOIC-16
Text: PN2369A MMBT2369A MMPQ2369 Discrete P O W E R & S ig n a l Technologies National I Semiconductor' MMPQ2369 MMBT2369A I PN2369A SOT-23 B SOIC-16 Mark: 1S NPN Switching Transistor T h is d e v ic e is d e s ig n e d for high s p e e d saturatio n sw itching a t collector
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PN2369A
MMBT2369A
MMPQ2369
OT-23
SOIC-16
bS01130
0040bc
Tf 227
MMBT2369A
MMPQ2369
PN2369A
SOIC-16
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NZT6729
Abstract: TN6729A
Text: TN6729A / NZT6729 & D iscrete PO W ER & S ig n a l Technologies National Semiconductor" NZT6729 TN6729A SOT-223 PNP General Purpose Amplifier This device is designed for general purpose medium power amplifiers and switches requiring collector currents to 800 mA.
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TN6729A
NZT6729
O-226
OT-223
004G745
b5D1130
DM0743
NZT6729
TN6729A
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NESY9140
Abstract: NESYM9140 R3585
Text: NESY9140 NESYM9140 POWER MOSFET - P CHANNEL T0257AA PACKAGE • • • • Switching Power Supplies Repetitive Avalanche Rating Isolated Hermetic Package High Reliability O ABSOLUTE MAXIMUM RATINGS TL = 25°C unless otherwise noted 1 PARAMETERS/TEST CONDITIONS
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NESY9140
NESYM9140
NESYM9I40
T0257AA
00A/nS,
XM46-1158
NESYM9140
R3585
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Untitled
Abstract: No abstract text available
Text: TOSHIBA 2SK2009 i ^ \c i TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE nnq Unit in mm HIGH SPEED SWITCHING APPLICATIONS. ANALOG SWITCH APPLICATIONS. • • • • • • + 0.5 25 -0 .3 + 0.25 High Input Impedance. Low Gate Threshold Voltage
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2SK2009
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