Untitled
Abstract: No abstract text available
Text: Schottky Barrier Diodes SBD MA3XD15 Silicon epitaxial planar type Unit: mm For high frequency rectification 0.40+0.10 –0.05 0.16+0.10 –0.06 0.4±0.2 2 1 (0.65) • Low forward voltage: VF < 0.45 V • Small reverse current: IR < 100 µA • IF(AV) = 1 A rectification is possible
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MA3XD15
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MA3XD15
Abstract: No abstract text available
Text: Schottky Barrier Diodes SBD MA3XD15 Silicon epitaxial planar type Unit: mm For high frequency rectification 0.40+0.10 –0.05 0.16+0.10 –0.06 0.4±0.2 2 1 (0.65) • Low forward voltage: VF < 0.45 V • Small reverse current: IR < 100 µA • IF(AV) = 1 A rectification is possible
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MA3XD15
MA3XD15
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Untitled
Abstract: No abstract text available
Text: This product complies with the RoHS Directive EU 2002/95/EC . Schottky Barrier Diodes (SBD) MA5SD29XG Silicon epitaxial planar type For super high speed switching circuits • Package Low forward voltage VF : < 0.42 V (at IF = 100 mA) Tow isolated elements are contained in one package, optimum for high-density
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2002/95/EC)
MA5SD29XG
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MA5SD29XG
Abstract: No abstract text available
Text: This product complies with the RoHS Directive EU 2002/95/EC . Schottky Barrier Diodes (SBD) MA5SD29XG Silicon epitaxial planar type For super high speed switching circuits • Package Low forward voltage VF : < 0.42 V (at IF = 100 mA) Tow isolated elements are contained in one package, optimum for high-density
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2002/95/EC)
MA5SD29XG
MA5SD29XG
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MA5SD29XG
Abstract: No abstract text available
Text: This product complies with the RoHS Directive EU 2002/95/EC . Schottky Barrier Diodes (SBD) MA5SD29XG Silicon epitaxial planar type For super high speed switching circuits • Package Low forward voltage VF : < 0.42 V (at IF = 100 mA) Tow isolated elements are contained in one package, optimum for high-density
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2002/95/EC)
MA5SD29XG
MA5SD29XG
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CRCW0805F
Abstract: LM3402 CMSH1-40M SLF10145T-150
Text: 1.0 Design Specifications Inputs Outputs #1 VinMin=10 Vout1=6.8 VinMax=30 Iout1=0.5 2.0 Design Description These circuits are designed to drive a string of 2 InGaN LEDs or 3 AlInGaP LEDs in series Vf total 6.6V at a forward current of 470 mA to 500 mA with a peak-to-peak ripple current of 100
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LM3402
LM3402
CSP-9-111S2)
CSP-9-111S2.
CRCW0805F
CMSH1-40M
SLF10145T-150
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Untitled
Abstract: No abstract text available
Text: New Mid-Power Low VF Schottky Barrier Diode Overview Panasonic Schottky Barrier Diodes series are ideal for power source of computers and portable equipments. Low VF design 15 to 35% lower than our conventional products reduces power consumption and enhances equipment efficiency.
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IFSM
Abstract: MA22D26
Text: New Mid-Power Low VF Schottky Barrier Diode Overview Panasonic Schottky Barrier Diodes series are ideal for power source of computers and portable equipments. Low VF design 15 to 35% below conventional our products reduces power consumption and enhances
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MA22D15(
MA22D21(
MA22D23
MA22D26(
MA22D28
MA2Q705
MA2Q735
MA2Q736
MA2Q737
MA2Q738
IFSM
MA22D26
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Untitled
Abstract: No abstract text available
Text: New Mid-Power Low VF Schottky Barrier Diode Overview Panasonic Schottky Barrier Diode series are ideal for use in the power sopplies of computers and portable equipment. With package configurations that range from Mini Type:2-pin to New Mini Power Type:2-pin packages, these diodes
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OD-123)
OD-106)
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MA151K
Abstract: MA8075-M OH003 A950
Text: , Hall Elements • Composite Elements Type No. Vr If V (mA) Vf Cd max. typ. (PF) If (V) (mA) AM A999 30/40 30/100 1.0 Package Irr typ. (ns) Vr If 1.0 1.0 1.5 No. (mA) (V) 30 Basic Type No. 10 MA704A MA151K Mini Type (4 pins) D14 ATentative Type No. Plot
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MA704A
MA151K
MA151K
MA8056
MA8075-M
MA8430
MA5Z270
OH008
OH00ing
OH003
A950
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LNJ814R88RA
Abstract: No abstract text available
Text: Approved Checked Designe^ DEVELOPMENT SPECIFICATION T e n t a t i v e P/N:LN.T814R88RA m VF IR IO Xp AX Topr Tstg - 3 0 ^ + 85 « -40 — + 100 V t i o n C o n d i t i o n I i.- — 1 0 m A Typ. '1.95 > yr I > Forward Voltage Reverse Leakage Current Luminous Intensity *2
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LNJ814R88RA
KB-H-02
KB-IH-022-0I8B
LNJ814R88RA
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a73 zener diode
Abstract: 30w ZENER DIODES d26 zener diode zener a30 zener diode A30 DO-34 ZENER S-Mini ZENER A28 d12112
Text: Diode i • Silicon Diodes AVC Vr Type No. (V) ■ Silicon Diodes (Band Switch) ¿V f / ¿IT Vf (V) Ifm (mA) Package (m$/C) M A 27/29 6 150 0.56 to 0.64 2 DO-35/34 D 28/26 M A 2 7W /2 9 W 6 100 1.18 to 1.36 4.6 DO-35/34 D 28/26 M A 2 7T /2 9T 6 70 1.76 to 2.04
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DO-35/34
DO-35/34
a73 zener diode
30w ZENER DIODES
d26 zener diode
zener a30
zener diode A30
DO-34 ZENER
S-Mini
ZENER A28
d12112
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15W ZENER DIODES
Abstract: bidirectional zener diodes ma27w MA28T PANASONIC MA4000 ma27 MINI 29 MA3062W MA75WA
Text: Diode • Silicon Diodes AVC Vr (V) Type No. ■ Silicon Diodes (Band Switch) AM f t A l VF (V) Ifm (mA) typ (mV/C) Package MA27/29 6 150 0.56 -0 .6 4 2 DO-35/34 D 28/26 MA27W/29W 6 100 1.18 -1 .3 6 4.6 DO-35/34 D 28/2S MA27T/29T 6 MA27Q/29Q 70 6 50 1.76 -2 .0 4
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MA27/29
MA27W/29W
MA27T/29T
MA27Q/29Q
MA28W
MA28T
MA30W
DO-35/34
15W ZENER DIODES
bidirectional zener diodes
ma27w
PANASONIC MA4000
ma27
MINI 29
MA3062W
MA75WA
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AN8091
Abstract: AN8091S D0127 panasonic cf
Text: Panasonic Voltage Regulators AN 8091, AN 809IS Overvoltage Protective Circuit Incorporated Switching Power Supply • Overview Unit ! mm AN8091 The AN8091 and A N 8091S are equipped with various protection functions such as from overcurrent and over voltage, which can raise the reliability of the power sup
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AN8091,
AN8091S
AN8091
AN8091S
500kHz.
500kHz
D0127
panasonic cf
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Untitled
Abstract: No abstract text available
Text: Panasonic Voltage Regulators A N 8091, AN8091S Overvoltage Protective Circuit Incorporated Switching Power Supply • Overview AN8091 The AN8091 and AN8091S are equipped with various protection functions such as from overcurrent and over voltage, which can raise the reliability of the power sup
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AN8091S
AN8091
AN8091
AN8091S
500kHz.
500kHz
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Untitled
Abstract: No abstract text available
Text: Panasonic Infrared Light Emitting Diodes LN77L GaAIAs Infrared Light Em itting Diode For optical control systems • Features • High-power output, high-efficiency : PQ = 1 8 mW typ. • Fast response and high-speed modulation capability : fc = 20 MHz (typ.)
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LN77L
0102Q.
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Untitled
Abstract: No abstract text available
Text: Panasonic Infrared Light Emitting Diodes LNA4801L GaAIAs Infrared Light Em itting Diode For optical control systems • Features • Fast response and high-speed modulation capability : fc = 20 MHz typ. • Wide directivity : 0 = 22 deg. (typ.) • Transparent epoxy resin package
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LNA4801L
100Hz,
0102Q.
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STG180
Abstract: No abstract text available
Text: Panasonic Infrared Light Emitting Diodes LN78 GaAIAs Infrared Light Em itting Diode For o ptical control cystem s • Features • High-power output, high-efficiency : PQ = 10 mW typ. • High-speed modulation capability : fc = 1 2 MHz I A b solu te M axim um R atings (Ta = 25°C)
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Untitled
Abstract: No abstract text available
Text: Panasonic Infrared Light Emitting Diodes LN75X GaAIAs Infrared Light Em itting Diode For o ptical control system s • Features • High-power output, high-efficiency : PQ = 10 mW typ. • High-speed modulation capability : fc = 1 2 MHz I A b solu te M axim um R atings (Ta = 25°C)
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LN75X
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Untitled
Abstract: No abstract text available
Text: Panasonic Infrared Light Emitting Diodes LN75X GaAIAs Infrared Light Emitting Diode For optical control systems • Features • High-power output, high-efficiency : PQ = 10 mW typ. • High-speed modulation capability : fc = 12 MHz I Absolute Maximum Ratings (Ta = 25°C)
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LN75X
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LN57
Abstract: LN58 fl37
Text: PANASONIC INDL/ELEKÍSEÍIIJ 7EC D | t,T3Efi54 6932852 PANASONIC INDLtELECTRONIC 7 f? h lU C 7 h D - ^ 0 ^ 1 W X □ □ □ ‘iñBL. 72C 0 9 8 3 Ó ñ J~ _ _ D _ _ LN5 7 T-Hi-ll LN57 GaAs -f K /G a A s Infrared Light Emitting Diode
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950nm
18deg.
18deg
LN57
LN58
fl37
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Untitled
Abstract: No abstract text available
Text: Panasonic Schottk y Barrier Diodes SBD MA2S707 Silicon epitaxial planer type U n it : m m For UHF mixer I Features ( 0 -2 ) Small forward voltage Vp Large conversion gain GC and optimum for UHF mixer SS-Mini package, enabling down-sizing of the equipment and auto
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MA2S707
890MHz,
935MHz,
45MHz
935MHz
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AN8092
Abstract: AN8092S
Text: Panasonic Voltage Regulators AN8092, AN8092S Overvoltage Protection Circuit Incorporated Switching Power Supply • Overview AN8092 Unit ! mm The AN8092 and AN8092S are equipped with various protection functions such as from overcurrent and over voltage, which can raise the reliability of the power sup
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AN8092,
AN8092S
AN8092
AN8092S
b132052
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jvc capacitor
Abstract: No abstract text available
Text: Panasonic Voltage Regulators AN8092, AN8092S Overvoltage Protection Circuit Incorporated Switching Power Supply • Overview AN8092 Unit ! mm The AN8092 and AN8092S are equipped with various protection functions such as from overcurrent and over voltage, which can raise the reliability of the power sup
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AN8092,
AN8092S
AN8092
AN8092
AN8092S
jvc capacitor
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