Untitled
Abstract: No abstract text available
Text: This product complies with the RoHS Directive EU 2002/95/EC . Schottky Barrier Diodes (SBD) MA22D23 Silicon epitaxial planar type Unit: mm For high frequency rectification 0.80±0.05 1.6±0.1 1 • Features 0 to 0.1 5˚ 2.6±0.1 3.5±0.1 • IF(AV) = 1 A rectification is possible.
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MA22D23
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ma22d23
Abstract: No abstract text available
Text: This product complies with the RoHS Directive EU 2002/95/EC . Schottky Barrier Diodes (SBD) MA22D23 Silicon epitaxial planar type M Di ain sc te on na tin nc ue e/ d For high frequency rectification • Package ■ Features • Code Mini2-F1 • Pin Name
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2002/95/EC)
MA22D23
ma22d23
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MA22D23
Abstract: No abstract text available
Text: Schottky Barrier Diodes SBD MA22D23 Silicon epitaxial planar type Unit: mm For high frequency rectification 0.80±0.05 1.6±0.1 1 • Features 0 to 0.1 5˚ 2.6±0.1 3.5±0.1 • IF(AV) = 1 A rectification is possible. • High IFSM (IFSM = 30 A) • Small reverse current IR.
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MA22D23
125lues,
MA22D23
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MA22D23
Abstract: No abstract text available
Text: This product complies with the RoHS Directive EU 2002/95/EC . Schottky Barrier Diodes (SBD) MA22D23 Silicon epitaxial planar type For high frequency rectification • Package ■ Features • Code Mini2-F1 • Pin Name 1: Anode 2: Cathode • IF(AV) = 1 A rectification is possible.
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2002/95/EC)
MA22D23
MA22D23
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Untitled
Abstract: No abstract text available
Text: This product complies with the RoHS Directive EU 2002/95/EC . Schottky Barrier Diodes (SBD) MA22D23 Silicon epitaxial planar type For high frequency rectification • Package M Di ain sc te on na tin nc ue e/ d ■ Features • Code Mini2-F1 • Pin Name
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MA22D23
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MA22D230G
Abstract: No abstract text available
Text: This product complies with the RoHS Directive EU 2002/95/EC . Schottky Barrier Diodes (SBD) MA22D230G Silicon epitaxial planar type For high frequency rectification • Package ■ Features • Code Mini2-F2 • Pin Name 1: Anode 2: Cathode Th an W is k y
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MA22D230G
MA22D230G
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panasonic transistor marking pr
Abstract: MA22D230G
Text: This product complies with the RoHS Directive EU 2002/95/EC . Schottky Barrier Diodes (SBD) MA22D230G Silicon epitaxial planar type M Di ain sc te on na tin nc ue e/ d For high frequency rectification • Package ■ Features • Code Mini2-F2 • Pin Name
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2002/95/EC)
MA22D230G
panasonic transistor marking pr
MA22D230G
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MIP2F3
Abstract: MIP2F4 MIP382 MIP2E7DMY mip2f2 mip291 MIP414S MIP2E5DMY mip411 MIP3E3SMY equivalent
Text: 2009 ver.2 Semiconductor Selection Guide Microcomputers, Bipolar ICs, Discrete Semiconductors Caution for Safety This product contains Gallium Arsenide GaAs . DANGER GaAs powder and vapor are hazardous to human health if inhaled or ingested. Do not burn, destroy, cut, cleave off, or chemically dissolve the
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PAMP13-N1
MIP2F3
MIP2F4
MIP382
MIP2E7DMY
mip2f2
mip291
MIP414S
MIP2E5DMY
mip411
MIP3E3SMY equivalent
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ma3df25
Abstract: 2PG011 DD5X062J dg3d501 DSKTJ04 DA3DF50 DB2U308 SSMini2-F5-B DSK3J02 DSC3F01
Text: 2009 Discrete Semiconductors New Products Line-up Request for your special attention and precautions in using the technical information and semiconductors described in this book 1 If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and
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respons39
O-220D-A1
MA26P02
MAZ3082J
2SC5779
MA26P07
MAZ3091
2SC5829
MA27E020G
ma3df25
2PG011
DD5X062J
dg3d501
DSKTJ04
DA3DF50
DB2U308
SSMini2-F5-B
DSK3J02
DSC3F01
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2sc5929
Abstract: MN1280 TRANSISTOR 2SC5929 3SK129 3SK97 2sc5928 2PG009 2SC5929 equivalent 2sk4000 2sd965 TRANSISTOR REPLACEMENT GUIDE
Text: 2009 Discrete Semiconductors Selection Guide Request for your special attention and precautions in using the technical information and semiconductors described in this book 1 If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and
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responsibiliXP08081
XP08546
XP0A554
XP0D873
XP0D874
XP0D875
XP0E554
2sc5929
MN1280
TRANSISTOR 2SC5929
3SK129
3SK97
2sc5928
2PG009
2SC5929 equivalent
2sk4000
2sd965 TRANSISTOR REPLACEMENT GUIDE
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Untitled
Abstract: No abstract text available
Text: New Mid-Power Low VF Schottky Barrier Diode Overview Panasonic Schottky Barrier Diode series are ideal for use in the power sopplies of computers and portable equipment. With package configurations that range from Mini Type:2-pin to New Mini Power Type:2-pin packages, these diodes
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OD-123)
OD-106)
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Untitled
Abstract: No abstract text available
Text: This product complies with the RoHS Directive EU 2002/95/EC . Schottky Barrier Diodes (SBD) MA22D39 Silicon epitaxial planar type For high speed switching circuits • Features Package Optimum for forward current (Effective value) IF(RMS) = 1.57 A rectification
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MA22D39
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k11 zener diode
Abstract: zener diode k11 diode k6 MA3DD82 MA2B150 MA3DF40 MA3DF30 MA2B171 MA21D350 MA3df3
Text: Diodes Switching Diodes. K2 Switching Diodes . K2
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MA24D56
MA24D58
MA24D70
MA24D74
MA3D749
MA3D749A
MA3D750
MA3D750A
MA3D752
MA3D752A
k11 zener diode
zener diode k11
diode k6
MA3DD82
MA2B150
MA3DF40
MA3DF30
MA2B171
MA21D350
MA3df3
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Untitled
Abstract: No abstract text available
Text: New Mid-Power Low VF Schottky Barrier Diode Overview Panasonic Schottky Barrier Diodes series are ideal for power source of computers and portable equipments. Low VF design 15 to 35% lower than our conventional products reduces power consumption and enhances equipment efficiency.
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Abstract: No abstract text available
Text: New Ideal for smaller, lighter, slimmer mobile equipment that saves power. Low VF Schottky Barrier Diode Series Overview The MA277*/MA27D* Series of small-signal Schottky barrier diodes is ideally suited for mobile equipment that is designed to be more compact and lightweight. It is offered in a flat-lead ultracompact
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MA277*
/MA27D*
MA22D*
MA22D23
MA22D26(
MA22D28
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zener diode SMD marking code 27 4F
Abstract: smd diode schottky code marking 2F smd zener diode code 5F panasonic MSL level smd zener diode code a2 SMD ZENER DIODE a2 smd zener 27 2f SMD zener marking code 102 A2 SMD zener SMD MARK A1
Text: This product complies with the RoHS Directive EU 2002/95/EC . Zener Diodes MAZDxxx Series Silicon planar type 0.60±0.05 0.20±0.05 Unit: mm For constant voltage, constant current, waveform clipper and surge absorption circuit 0.12+0.05 –0.02 2 • Absolute Maximum Ratings Ta = 25°C
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zener diode SMD marking code 27 4F
smd diode schottky code marking 2F
smd zener diode code 5F
panasonic MSL level
smd zener diode code a2
SMD ZENER DIODE a2
smd zener 27 2f
SMD zener marking code 102
A2 SMD
zener SMD MARK A1
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220v AC voltage stabilizer schematic diagram
Abstract: LG color tv Circuit Diagram tda 9370 1000w inverter PURE SINE WAVE schematic diagram schematic diagram atx Power supply 500w TV SHARP IC TDA 9381 PS circuit diagram wireless spy camera 9744 mini mainboard v1.2 sony 279-87 transistor E 13005-2 superpro lx
Text: QUICK INDEX NEW IN THIS ISSUE! Detailed Index - See Pages 3-24 AD9272 Analog Front End, iMEMS Accelerometers & Gyroscopes . . . . . . 782, 2583 Connectors, Cable Assemblies, IC Sockets . . . . . . . . . . . 28-528 Acceleration and Pressure Sensors . . . . . . . . . . . . . . . . . . . . . . . . . . Page 2585
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AD9272
P462-ND
LNG295LFCP2U
P463-ND
LNG395MFTP5U
220v AC voltage stabilizer schematic diagram
LG color tv Circuit Diagram tda 9370
1000w inverter PURE SINE WAVE schematic diagram
schematic diagram atx Power supply 500w
TV SHARP IC TDA 9381 PS
circuit diagram wireless spy camera
9744 mini mainboard v1.2
sony 279-87
transistor E 13005-2
superpro lx
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MA22D23
Abstract: MA22D39 MA22D390G
Text: This product complies with the RoHS Directive EU 2002/95/EC . Schottky Barrier Diodes (SBD) MA22D390G Silicon epitaxial planar type For high speed switching circuits • Package Optimum for forward current (Effective value) IF(RMS) = 1.57 A rectification
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MA22D390G
MA22D23
MA22D39
MA22D390G
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panasonic transistor marking pr
Abstract: MA22D23 MA22D39 MA22D390G
Text: This product complies with the RoHS Directive EU 2002/95/EC . Schottky Barrier Diodes (SBD) MA22D390G Silicon epitaxial planar type For high speed switching circuits • Package Optimum for forward current (Effective value) IF(RMS) = 1.57 A rectification
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MA22D390G
panasonic transistor marking pr
MA22D23
MA22D39
MA22D390G
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Untitled
Abstract: No abstract text available
Text: This product complies with the RoHS Directive EU 2002/95/EC . Schottky Barrier Diodes (SBD) MA22D39 Silicon epitaxial planar type For high speed switching circuits • Package Optimum for forward current (Effective value) IF(RMS) = 1.57 A rectification
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MA22D39
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mip411
Abstract: MIP2F4 MIP2F3 AN12947a mip2f2 MIP2F20MS MIP2F40MS mip2e7dmy panasonic inverter dv 700 manual mip291
Text: 2009 ver.2 Semiconductor Selection Guide Microcomputers, Bipolar ICs, Discrete Semiconductors Caution for Safety This product contains Gallium Arsenide GaAs . DANGER GaAs powder and vapor are hazardous to human health if inhaled or ingested. Do not burn, destroy, cut, cleave off, or chemically dissolve the
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PAMP13-N1
mip411
MIP2F4
MIP2F3
AN12947a
mip2f2
MIP2F20MS
MIP2F40MS
mip2e7dmy
panasonic inverter dv 700 manual
mip291
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MA3DF30
Abstract: MIP2F mip2fx MIP2KX PANASONIC SC107A IC 4026 internal structure MIP2K MA3DF46 ma3df46* ma3df30 MA2YD260G
Text: 2009 ver. 2 Diode Series %JPEF4FSJFT Request for your special attention and precautions in using the technical information and semiconductors described in this book 1 If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and
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MA22D23
Abstract: MA22D39
Text: This product complies with the RoHS Directive EU 2002/95/EC . Schottky Barrier Diodes (SBD) MA22D39 Silicon epitaxial planar type For high speed switching circuits • Package Optimum for forward current (Effective value) IF(RMS) = 1.57 A rectification
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2002/95/EC)
MA22D39
MA22D23
MA22D39
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PDF
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Untitled
Abstract: No abstract text available
Text: New Ideal for smaller, lighter, slimmer mobile equipment that saves power. Low VF Schottky Barrier Diode Series Overview The MA277*/MA27D* Series of small-signal Schottky barrier diodes is ideally suited for mobile equipment that is designed to be more compact and lightweight. It is offered in a flat-lead ultracompact
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MA277*
/MA27D*
MA22D*
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