Untitled
Abstract: No abstract text available
Text: 1R5JZ41,1R5NZ41 TOSHIBA Rectifier Silicon Diffused Type 1R5JZ41, 1R5NZ41 General Purpose Rectifier Applications • Unit: mm Average Forward Current: IF AV = 1.5 A (Ta = 25°C) • Repetitive Peak Reverse Voltage: VRRM = 600V, 1000 V • Peak One Cycle Surge Forward Current (non repetitive): IFSM = 100 A
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1R5JZ41
1R5NZ41
1R5JZ41,
1R5NZ41
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Selector Guide
Abstract: ITO-220AC VBT3045BP 45V100
Text: V is h ay I n t e rt e c h n olo g y, I n c . TMBS Rectifiers Rectifiers - For PV Solar Bypass Protection 45 V Trench MOS Barrier Schottky Product Package IF DC VRRM IFSM VF at IF = 10 A Tj Max. VT1045BP TO-220AC 10 A 45 V 100 A 0.52 V 200 °C VBT1045BP
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VT1045BP
O-220AC
VBT1045BP
O-263AB
VFT1045BP
VT2045BP
ITO-220AC
O-220AC
VBT2045BP
Selector Guide
VBT3045BP
45V100
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RM 11B
Abstract: RM 10B RO 2 RO 2B Rectifier Diodes
Text: 4-1 Rectifier Diodes ●Surface-Mount VRM V 400 IF (AV) (A) Values in parentheses are for the products with heatsinks 2.0 Package Surface-Mount (SJP) Part Number SJPM-H4 IFSM (A) 50Hz Single Half Sine Wave 45 Tj (°C) Tstg (°C) -40 to +150 VF (V) max 1.1
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O-220F2Pin
O-220F
RM 11B
RM 10B
RO 2
RO 2B
Rectifier Diodes
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Untitled
Abstract: No abstract text available
Text: SKCD 14 C 120 I HD Absolute Maximum Ratings Symbol Conditions Values VRRM Tj = 25 °C, IR = 0.075 mA 1200 V Tj = 25 °C 210 A Tj = 150 °C 170 A Tj = 150 °C, tp = 10 ms, sin 180° 145 A²s 150 °C IFSM 10 ms sin 180° i²t Tjmax CAL-DIODE IF = 20 A 1 VRRM = 1200 V
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DSEE8-08CC
Abstract: 10P40
Text: DSEE 8-08CC HiPerDynFREDTM Epitaxial Diode IFAV = 10 A VRRM = 800 V trr = 30 ns ISOPLUS220TM Electrically Isolated Back Surface VRRMc VRRM V V 800 400 Type ISOPLUS 220LVTM DSEE 8-08CC 1 2 3 G Preliminary Data Sheet Conditions Maximum Ratings A A IFSM TVJ = 45°C; tp = 10 ms 50 Hz , sine
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8-08CC
ISOPLUS220TM
220LVTM
10P400PJ
DS99053
DSEE8-08CC
ISOPLUS220LV
DSEE8-08CC
10P40
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05464
Abstract: 2612N 3290T
Text: VBE 26-12NO7 ECO-PAC TM Single Phase Rectifier Bridge IdAV = 32 A VRRM = 1200 V trr = 40 ns with Fast Recovery Epitaxial Diodes FRED VRSM VRRM V V 1200 1200 D Typ A N VBE 26-12NO7 K Symbol Conditions IdAV ① IdAVM TC = 85°C, module IFSM TVJ = 45°C VR = 0
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26-12NO7
26-12NO7
35-12NO7
05464
2612N
3290T
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10104A
Abstract: 2x101-04A
Text: DSEP 2x 101-04A HiPerFREDTM Epitaxial Diode IFAV = 2x 100 A VRRM = 400 V trr = 30 ns with soft recovery VRSM VRRM V V 400 400 miniBLOC, SOT-227 B Type DSEP 2x 101-04A D4 Symbol Conditions Maximum Ratings IFRMS IFAVM TC = 60°C; rectangular, d = 0.5 IFSM TVJ = 45°C; tp = 10 ms 50 Hz , sine
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01-04A
OT-227
2x101-04A
10104A
2x101-04A
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ixys dsi
Abstract: 30-08AC 30-12AC ir 2411
Text: DSI 30 Rectifier Diode ISOPLUS220TM VRRM = 800 - 1200 V IF AV M = 30 A Electrically Isolated Back Surface VRSM VRRM V V 900 1300 800 1200 Type ISOPLUS 220TM DSI 30-08AC DSI 30-12AC A C Preliminary Data Sheet C A Symbol IFRMS IFAV IFSM I2t Conditions Maximum Ratings
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ISOPLUS220TM
220TM
30-08AC
30-12AC
ISOPLUS220
DS98791A
ixys dsi
30-08AC
30-12AC
ir 2411
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Untitled
Abstract: No abstract text available
Text: Advanced Technical Information Dual HiPerFREDTM Epitaxial Diode DSEE 55-24N1F in ISOPLUS i4-PACTM VRRM = 2400 V IF AV M = 55 A trr = 220 ns 1 3 1 3 5 5 Features Rectifier Bridge Symbol Conditions Maximum Ratings VRRM c VRRM IFAV IF(AV)M IFSM TC = 90°C; sine 180°
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55-24N1F
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metal rectifier diode
Abstract: No abstract text available
Text: Three Phase Rectifier Bridge FUO 22-12N in ISOPLUS i4-PACTM VRRM = 1200 V ID AV M = 27 A IFSM = 100 A Preliminary Data 1 5 Symbol Features Conditions Maximum Ratings VRRM IFAV ID(AV)M IFSM TC = 90°C; sine 180° (per diode) TC = 90°C TVJ = 25°C; t = 10 ms; sine 50 Hz
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22-12N
metal rectifier diode
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36-12NO8
Abstract: 36-14NO8
Text: VBO 36 IdAVM = 30 A VRRM = 1200-1800 V Single Phase Rectifier Bridge + Type 1200 1400 1600 1800 1200 1400 1600 1800 VBO 36-12NO8 VBO 36-14NO8 VBO 36-16NO8 VBO 36-18NO8 Symbol Test Conditions IdAV IdAVM TC = 85°C, module TC = 62°C, module IFSM TVJ = 45°C;
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36-12NO8
36-14NO8
36-16NO8
36-18NO8
36-12NO8
36-14NO8
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45ct
Abstract: 9a2a C620 diode ixys free catalog INVERTER 20kW D670
Text: MUBW 30-12 A6 Converter - Brake - Inverter Module CBI1 Rectifier Brake VRRM = 1600V IFAVM = 25 A IFSM = 370 A VCES = 1200 V IC25 = 18 A VCE(sat) = 2.6 V Inverter VCES = 1200 V IC25 = 31 A VCE(sat) = 2.2 V Features Input Rectifier Bridge D8 - D13 ● Symbol
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145-16NO1
Abstract: ir 145 a 116-16NO1
Text: VUB 116 / 145 Advanced Technical Information VRRM = 1600 V IdAVM = 116/145 A Three Phase Rectifier Bridge with IGBT and Fast Recovery Diode for Braking System 10+11 12 19+20 Type V 1600 1600 1 VUB 116-16 NO1 VUB 145-16 NO1 6+7 4+5 2+3 8+9 VRRM IdAVM IFSM I2t
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B25/50
145-16NO1
ir 145 a
116-16NO1
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DIODE 1400 VRRM
Abstract: 105-16N 105-16NO7 ir 9120 105-12NO7
Text: VUO 105 IdAVM = 140 A VRRM = 1200-1800 V Three Phase Rectifier Bridge VRSM VRRM V V 1200 1400 1600 1800 1200 1400 1600 1800 + Type ~ VUO 105-12NO7 VUO 105-14NO7 VUO 105-16NO7 VUO 105-18NO7* Test Conditions IdAVM TC = 85°C, module IFSM TVJ = 45°C; VR = 0
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105-12NO7
105-14NO7
105-16NO7
105-18NO7*
135ensions.
DIODE 1400 VRRM
105-16N
105-16NO7
ir 9120
105-12NO7
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28-12NO7
Abstract: No abstract text available
Text: VUO 28 IdAV = 28 A VRRM = 600-1200 V Three Phase Rectifier Bridge Preliminary data VRSM VRRM V V 700 900 1300 600 800 1200 D Type VUO 28-06NO7 VUO 28-08NO7 VUO 28-12NO7 Symbol Test Conditions IdAV ① TC = 100°C, module IFSM TVJ = 45°C; VR = 0 I2t H A N
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28-06NO7
28-08NO7
28-12NO7
28-12NO7
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metal rectifier diode
Abstract: 4 pin bridge rectifier package FBO16-12N E 72873
Text: FBO16-12N VRRM = 1200 V Single Phase Rectifier Bridge ID AV M = 22 A IFSM = 100 A in ISOPLUS i4-PACTM Preliminary Data 1 5 Rectifier Bridge Symbol Features Conditions Maximum Ratings VRRM IFAV ID(AV)M IFSM TC = 90°C; sine 180° (per diode) TC = 90°C TVJ = 25°C; t = 10 ms; sine 50 Hz
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FBO16-12N
16-12N
metal rectifier diode
4 pin bridge rectifier package
E 72873
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S5314
Abstract: 1203 transistor B130LB MBRS130L
Text: LB130 SCHOTTKY DIE SPECIFICATION Revision 3 5/22/2000 General Description Low Vf 30V 1A Single Anode SYM Spec. Limit VRRM IFAV 30 1 32 Volt Amp VFMAX 0.395 0.385 Volt VFMAX 0.445 0.435 Volt IRMAX 0.2 0.19 mA Cj MAX 90 pF Nonrepetitive Peak Surge Curren IFSM
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LB130
MBRS130L,
B130LB
S5314
S5314
1203 transistor
B130LB
MBRS130L
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72-08N
Abstract: No abstract text available
Text: VBO 52 VBO 72 IdAV = 52/72 A VRRM = 800-1800 V Single Phase Rectifier Bridge Symbol Test Conditions IdAV IdAV TC = 100°C, module TA = 45°C RthCA = 0.6 K/W , module IFSM TVJ = 45°C; VR = 0 I2t ~ ~ VBO 72-08NO7 VBO 72-12NO7 VBO 72-14NO7 VBO 72-16NO7 VBO 72-18NO7
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52-08NO7
52-12NO7
52-14NO7
52-16NO7
52-18NO7
72-08NO7
72-12NO7
72-14NO7
72-16NO7
72-18NO7
72-08N
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Untitled
Abstract: No abstract text available
Text: SHINDENGEN General Purpose Rectifiers S1WB A 80 SMT Bridges OUTLINE DIMENSIONS Case : 1W Unit : mm 800V 1A FEATURES Small SMT High IFSM Applicable to Automatic Insertion APPLICATION Switching power supply Home Appliances, Office Equipment Telecommunication, Factory Automation
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1mst10ms
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LN4SB60
Abstract: No abstract text available
Text: SHINDENGEN General Purpose Rectifiers iLow Noise Bridges OUTLINE DIMENSIONS LN4SB60 Case : 3S Unit : mm 600V 4A FEATURES Low noise SIL Package High IFSM APPLICATION Switching power supply Home (Electrical) Appliances Office Equipment, Telecommunication,
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LN4SB60
LN4SB60
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S20VT80
Abstract: No abstract text available
Text: SHINDENGEN General Purpose Rectifiers S20VT80 3 Phase Bridge Modules OUTLINE DIMENSIONS Case : SVT Unit : mm FEATURES Dual In-Line Package Compact 3 phase bridge High IFSM Applicable to mount on glass-epoxy substrate (VTA type) APPLICATION Big Power Supply
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S20VT80
1mst10ms
S20VTx
S20VT80
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S15VTA80
Abstract: bridge sine wave inverter
Text: SHINDENGEN General Purpose Rectifiers S15VTA80 3 Phase Bridge Modules OUTLINE DIMENSIONS Case : SVTA Unit : mm FEATURES Dual In-Line Package Compact 3 phase bridge High IFSM Applicable to mount on glass-epoxy substrate (VTA type) APPLICATION Big Power Supply
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S15VTA80
1mst10ms
S15VTAx
S15VTA80
bridge sine wave inverter
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AG01A
Abstract: EG01A FMC-26U FMD-G26S FMG-G26S FMG-G36S FML-G16S FML-G26S FMN-G16S FMX-G16S
Text: VRM V Package Part Number I F (AV) (A) IFSM (A) 50Hz Tj (°C) 600 Frame-2Pin Center-tap 30 IR (H) (mA) t rr VF (V) max Ta IF V = V V = V R RM R RM (°C) (A) max max Half-cycle Sinewave Single Shot Axial IR (µA) Tstg (°C) t rr 1 t rr 2 : I F / I R (=I F) 90% Recovery Point
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100mA/100mA
100mA/200mA
AG01A
FMC-G28SL
AG01A
EG01A
FMC-26U
FMD-G26S
FMG-G26S
FMG-G36S
FML-G16S
FML-G26S
FMN-G16S
FMX-G16S
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2KBP005M
Abstract: 2KBP10M 3N253 3N254 3N259 J-STD-002B
Text: 2KBP005M thru 2KBP10M, 3N253 thru 3N259 VISHAY Vishay Semiconductors Glass Passivated Single-Phase Bridge Rectifier Case Style KBPM Major Ratings and Characteristics IF AV 2A VRRM 50 V to 1000 V IFSM 60 A IR 5 µA VF 1.1 V Tj max. 150 °C ~ ~ ~ ~ Features
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2KBP005M
2KBP10M,
3N253
3N259
UL-94V-0
J-STD-002B
MIL-STD-750,
E54214
J-STD-020C
23-Nov-04
2KBP10M
3N254
3N259
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